Abstract
The dependences of electron mobility in AlInGaN/InGaN heterostructure on the barrier and channel alloy compositions and on temperature are investigated including six scattering processes: acoustic deformation potential (DP) scattering, piezoelectric field (PE) scattering, polar optical phonons (PO) scattering, dislocation impurity (DIS) scattering, interface roughness (IRF) scattering, and alloy disorder (ADO) scattering. The results show that ADO scattering is the most important scattering mechanism, and specifically channel alloy disorder gets severer than barrier alloy disorder except for InGaN channels with very low indium content (near 0) or extremely high indium mole fraction (near 1). The variations of the barrier strain, two‐dimensional electron gas (2DEG) density, 2DEG mobility, and conductivity in AlInGaN/In0.04Ga0.96N heterostructure with full barrier alloy composition are summarized. The results indicate that relatively large aluminum content and small indium mole fraction are desired for higher conductivity. By comparing the temperature‐dependent transport properties of Al0.83In0.13Ga0.04N/InGaN heterostructures with different InGaN compositions, we find that it is the ADO scattering and PO scattering that determine 2DEG mobility change and the mobility exhibits a weaker dependence on temperature with increasing indium mole fraction in InGaN channel.
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