Indium Atoms Research Articles

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy

We studied indium incorporation into InGaN/GaN quantum wells grown by metal–organic vapor phase epitaxy by systematically varying of gallium and indium precursor flows on (0001), (101¯3), (112¯2), and (101¯0) orientations. The layer thickness and indium composition obtained from x-ray diffraction analysis were correlated with a model based on indium and gallium incorporation efficiencies. In the model, the indium incorporation efficiency is reproduced by the Langmuir surface coverage of gallium, indicating that indium atoms close to gallium atoms can be incorporated preferably.

Optically Detected Magnetic Resonance Spectroscopy of Cu-Doped CdSe/CdS and CuInS2 Colloidal Quantum Dots.

Copper-doped II-VI and copper-based I-III-VI2 colloidal quantum dots (CQDs) have been at the forefront of interest in nanocrystals over the past decade, attributable to their optically activated copper states. However, the related recombination mechanisms are still unclear. The current work elaborates on recombination processes in such materials by following the spin properties of copper-doped CdSe/CdS (Cu@CdSe/CdS) and of CuInS2 and CuInS2/(CdS, ZnS) core/shell CQDs using continuous-wave and time-resolved optically detected magnetic resonance (ODMR) spectroscopy. The Cu@CdSe/CdS ODMR showed two distinct resonances with different g factors and spin relaxation times. The best fit by a spin Hamiltonian simulation suggests that emission comes from recombination of a delocalized electron at the conduction band edge with a hole trapped in a Cu2+ site with a weak exchange coupling between the two spins. The ODMR spectra of CuInS2 CQDs (with and without shells) differ significantly from those of the copper-doped II-VI CQDs. They are comprised of a primary resonance accompanied by another resonance at half-field, with a strong correlation between the two, indicating the involvement of a triplet exciton and hence stronger electron-hole exchange coupling than in the doped core/shell CQDs. The spin Hamiltonian simulation shows that the hole is again associated with a photogenerated Cu2+ site. The electron resides near this Cu2+ site, and its ODMR spectrum shows contributions from superhyperfine coupling to neighboring indium atoms. These observations are consistent with the occurrence of a self-trapped exciton associated with the copper site. The results presented here support models under debate for over a decade and help define the magneto-optical properties of these important materials.

Improved minority carrier lifetime in p-type GaN by suppressing the non-radiative recombination process

Time-resolved photoluminescence and capacitance-voltage measurement were performed on p-type GaN and InGaN films to study the minority carrier recombination mechanism. The minority carrier lifetime (τ PL) for p-GaN with a Mg concentration of 1.7 × 1019 cm−3 was 46 ps. The non-radiative recombination due to gallium vacancies (V Ga)-related defects is confirmed to dominate the minority carrier transport process. To suppress the formation of V Ga defects, the indium atoms were added into p-GaN. As a consequence, the V Ga-related non-radiative recombination centers were reduced from 8 × 1015 to 5 × 1014 cm−3 and a record long τ PL of 793 ps was obtained for p-In0.035Ga0.95N film.

Influence of atom segregation on the structure and luminescence of InGaAsSb/AlGaAsSb multiple quantum wells

Quaternary Indium gallium arsenic antimony (InGaAsSb) compounds is indispensable as the active layer of diode lasers emitting at 1.75–4.4 μm, which are used in optoelectronic devices. However, the course of the high-temperature instability of the quantum well structure, which is closely related to the diffusion of indium (In) and antimony (Sb) atoms, is still not clear due to the system's complexity. In this paper, the diffusion process of indium and antimony atoms by thermal treatment, and the changes in the structural and optical properties of the InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) were investigated. The InGaAsSb/AlGaAsSb MQWs were treated with a treatment time of 40 s at different annealing temperatures. X-ray diffraction (XRD) and Raman spectra show that with the increase of annealing temperature, the structure of MQWs were destroyed more seriously, and the segregation of indium and antimony becomes more serious. The luminescence characteristics of MQWs with component segregation were investigated by photoluminescence (PL) spectra.

Magneto-optical trapping of a group-III atom

The authors demonstrate the first magneto-optical trap of indium atoms, which belong to group III of the periodic table. These atoms offer a unique combination of features, such as the simultaneous presence of Feshbach resonances and optical clock transitions. The techniques introduced in this work can be applied to other elements in group III.

Morphology controlled synthesis of Fe and Mn co-doped In2O3 nanocubes and their Dopant-Atom effects on electronic structure and magnetic properties

Fe and Mn co-doped In2O3 single-phase cubic crystal structure nanocubes of uniform size and control over dopant concentration (In1.96Fe0.02Mn0.02O3, In1.94Fe0.02Mn0.04O3, In1.92Fe0.02Mn0.06O3 and In1.90Fe0.02Mn0.08O3) and microstructure were prepared using the hydrothermal-annealing technique. On a wider vision, we systematically investigated the influence of Fe and Mn co-doping in In2O3 through complementary experimental techniques and density functional theoretical (DFT) calculations to reveal the physical mechanisms involved in the origin of observed ferromagnetism. DFT calculations demonstrated that the substitution of surface indium atom by iron (FeIn) leads to impurity states on the top of In2O3 valence band maximum (VBM). Conversely, incorporation of interstitial (Mni) impurities in the host matrix without oxygen vacancies (VO) slightly shifts the top of the valence band and incorporation of interstitial Mn-impurity in the In2O3 (111) surface with oxygen vacancy does not provide noticeable changes in the electronic structure of the defective surface. High-resolution transmission electron microscopy measurements showed the formation of regular nanocubes in shape with 36.9–37.6 nm in average edge length. X-ray photoelectron spectroscopy investigations revealed that valence state of Fe mostly as Fe2+ and Fe3+ and Mn2+ for Mn atom in the In1.96Fe0.02Mn0.02O3, In1.94Fe0.02Mn0.04O3, In1.92Fe0.02Mn0.06O3 and In1.90Fe0.02Mn0.08O3. Magnetic studies exhibited room temperature ferromagnetism (RTFM) in the investigated samples with the high coercivity and saturation magnetization of 145.48 Oe and 0.023 emu/g, respectively for the In1.94Fe0.02Mn0.04O3. The origin of observed RTFM was described based on the bound magnetic polaron (BMP) model mechanism. DFT investigations demonstrated the clusters of impurities (FeIn-nMni) robust magnetic interactions within the cluster and between the clusters. Interestingly, only FeIn-nMni clusters contribute ferromagnetism observed in the investigated co-doped systems. Therefore, increasing the concentration of defects leads to the improvement of ferromagnetism. The comprehensive experimental and DFT investigations present new evidence to the observed ferromagnetism and electronic structure of Fe,Mn co-doped In2O3 nanocubes.

Stress relaxation in III-V nitrides: Investigation of metallic atoms interaction with the N-vacancy

Molecular dynamics simulations have been carried out to study the interaction between two point defects in III-nitride materials (AlN, GaN and InN): a substitutional metal atom (indium, aluminum, gallium) and the N-vacancy. The Stillinger-Weber (S-W) empirical potential is used. By calculating the potential energies of different configurations with these two defects, it is shown that the indium atom in AlN and GaN or aluminum and gallium in InN are stable in the immediate vicinity of the N-vacancy. In contrast, the gallium atom in AlN and the aluminum atom in GaN may be difficult to bring near the N-vacancy. This behavior is related to the stress relaxation in the presence of these point defects. In AlN, the stability of indium atoms around the N-vacancy is the highest, indicating a good probability of aggregation, which may constitute a first explanation for the reported phase segregation during the growth of InAlN alloys.

Adsorption configurations of Co-phthalocyanine on In2O3(111)

Indium oxide offers optical transparency paired with electrical conductivity, a combination required in many optoelectronic applications. The most-stable In2O3(111) surface has a large unit cell (1.43 nm lattice constant). It contains a mixture of both bulk-like and undercoordinated O and In atoms and provides an ideal playground to explore the interaction of surfaces with organic molecules of similar size as the unit cell. Non-contact atomic force microscopy (nc-AFM), scanning tunneling microscopy (STM), and density functional theory (DFT) were used to study the adsorption of Co-phthalocyanine (CoPc) on In2O3(111). Isolated CoPc molecules adsorb at two adsorption sites in a ∼7:3 ratio. The Co atom sits either on top of a surface oxygen (‘F configuration’) or indium atom (‘S configuration’). This subtle change in adsorption site induces different bending of the molecules and differences in their electronic structure. According to DFT, the lowest unoccupied molecular orbital of the undistorted gas-phase CoPc remains mostly unaffected in the F configuration but is filled by one electron in S configuration. At coverages up to one CoPc molecule per substrate unit cell, a mixture of domains with molecules in F and S configuration are found. Molecules in F configuration first condense into a poorly ordered F-(2 × 2) structure and finally rearrange into an F-(1 × 1) structure in which the molecules partially overlap. The only ordered structure of molecules adsorbed in S configuration is an S-(1 × 1) superstructure at full monolayer coverage.

Indium complexes of chlorin e6 trimethyl ester and methylpyropheophorbide a: Synthesis and photophysical characterization

Complexes of chlorin e6 trimethyl ester (H2Chl-e6,), methylpyropheophorbidea (H2MePyroPheo) with indium(III) (InChl-e6, and InMePyroPheo) were obtained from the corresponding macrocyclic ligands by complexation reaction with InIII trisacetylacetonate in acetic acid. In the case of methylpheophorbidea (H2MePheo) the complexation reaction is accompanied by side-process of exo-cyclic ring oxidation leading to inseparable mixture of InMePheo, its 13(2)-hydroxy derivative and InMePyroPheo. Spectral-luminescence and photophysical properties of H2Chl-e6 and H2MePyroPheo and their InIII complexes were studied in DMF. Metal free chlorins have relatively long fluorescence lifetimes (τf ∼ 5.4–7.5 ns) and moderate fluorescence and singlet oxygen quantum yields (ФF ∼ 0.39 and 0.29, ФΔ ∼ 0.47 and 0.60, for H2Chl-e6 and H2MePyroPheo, respectively). It was revealed that insertion of the indium atom into the macrocyclic core strongly diminishes the fluorescence lifetimes (τf ∼ 0.5–0.9 ns) and quantum yields (ФF ∼ 0.04–0.06), but facilitates the conversion to the triplet state leading to enhanced singlet oxygen quantum yields. Therefore, InChl-e6 and InMePyroPheo having intense Q-band absorption in the therapeutic window (638 and 661 nm) and high values of ФΔ (0.84 and 0.76) can be considered as promising photosensitizers for PDT.

Quantitative laser diagnostics on trimethylindium pyrolysis and photolysis for functional nanoparticle growth

We report on an optical investigation of the pyrolysis and photolysis of trimethylindium (TMIn) as a typical metalorganic precursor for functional nanowire growth, aiming at an in-depth understanding of the governing chemistry and optimization of aerosol-based (aerotaxy) and epitaxial growth processes. A flow reactor with special consideration given to optical access was built to provide the chemical environment for in situ optical measurements on the pyrolysis and photolysis of TMIn. By probing a resonant transition of the indium atom, high-resolution laser absorption and laser-induced fluorescence spectroscopy were applied to obtain the atomic indium concentration at different chosen conditions in a spatially and temporally resolved manner. The results indicate that quantitative measurements of indium atoms under growth conditions are feasible. A 213 nm pulsed laser was employed to induce photolytic dissociation of TMIn vapor under chosen conditions. The photolytic dissociation of TMIn vapor with an ultraviolet laser turns out to be a promising method in generating substantial chemical effects, indicated by the generation of visible clouds of indium particles, and high concentrations of indium atoms far beyond the pyrolytically generated amount.

Highly ordered pure and indium-incorporated MCM-41 mesoporous adsorbents: synthesis, characterization and evaluation for dye removal

Highly ordered pure MCM-41 and In-MCM-41 mesoporous adsorbents (with Si/In = 95 (IM0.05) and Si/In = 90 (IM0.1)) were synthesized using the hydrothermal-assisted method. The structural, morphological and texture characteristics were investigated by XRD, N2 adsorption–desorption, SEM-EDX, TEM, diffuse reflectance (DR) and FTIR. The broadening XRD diffraction peaks as well as the shifts to higher and lower 2-theta in IM0.05 and IM0.1, respectively, confirmed the incorporation of indium atoms in the MCM-41 structure. SEM-EXD and TEM images showed that pure MCM-41 and IM0.05 preserve a highly long-range well-ordered hexagonal pore structure, on the other hand, high loading of indium (IM0.1) resulted in partially irregular pore-ordering and morphological defects related to a partial dissolution of MCM-41 structure. The infrared spectra of In-incorporated samples showed a decrease in the transmittance intensity of MCM-41 characteristic peaks with little shifts relative to the pure MCM-41 sample. The potential of pure MCM-41 and In-MCM-41 samples for adsorption of dyes was preliminarily investigated. The removal efficiency of both methylene blue and basic yellow-28 (BY28) was enhanced by the incorporation of indium in the MCM-41. The adsorption equilibrium data of BY28 dye on pure, IM0.05 and IM0.1 samples fitted well with Langmuir adsorption model with adsorption capacity of 123.46, 156.99 and 158.48 mg g−1 respectively. The calculated free adsorption energy obtained from D–R isotherm was found to be 26.7 kJ mol−1 referring to that the adsorption of BY28 on IM0.05 adsorbent is chemical. The adsorption kinetic of BY28 on IM0.05 sample followed the pseudo-second-order model. The adsorption experiments revealed that the prepared samples can be used as effective adsorbents for the removal of dyes in aqueous solutions with good recovery and recyclability.Graphical

Electron Regulation of Single Indium Atoms at the Active Oxygen Vacancy of In2 O3 (110) for Production of Acetic Acid and Acetone through Direct Coupling of CH4 with CO2.

The production of acetic acid and acetone from the direct coupling of CO2 and CH4 on the doped In2 O3 (110) surface has been studied by extensive first-principles calculations, and the Ga or Al substitution for the single In atom at the active oxygen vacancy of In2 O3 (110) can stabilize the reaction species and reduce the free energy barrier of the rate-limiting C-H activation for the conversion of CO2 and CH4 to acetic acid. Herein, the metal doping lowers the energy level of partially empty s and p orbitals of In1 at the oxygen vacancy site and manipulates its electronic properties, resulting in the activity improvement. The stable intermediate with the newly-formed CH3 COO* has the available In1 site for subsequent CH4 activation, which may initiate the direct C-C coupling of CH3 COO* and CH3 * to yield C3 species on the doped In2 O3 (110). These findings suggest that the metal doping of the active oxygen vacancy opens an avenue for the carbon-chain growth through heterogeneously catalytic coupling of CO2 and CH4 .

In situ isotope study of indium diffusion in InP/Al2O3 stacks

A high-quality interface of III–V/high-k dielectrics is critical to obtain high-performance devices. Indium out-diffusion in an InP-based stack is correlated with the density of interface states. Diffused In species are in the form of oxides, which invite the question about the diffusion of species through the high-k dielectric layer. For an InP/Al2O3 stack, O18 isotope tracing is carried out to investigate if the interface oxygen and indium atoms diffuse together or not. This work sheds light on the fundamental mechanism for III–V semiconductors' interface elemental diffusion as well as the interface passivation strategy.

Lutetium‐rich phases with a coloring variant of the Y3Rh2 type structure

AbstractThe lutetium‐rich intermetallic compounds Lu21T14–xInx (T=Rh, Pd, Pt) with x values ranging from 1.57 to 4.70 were synthesized from the elements in sealed tantalum ampules in an induction furnace with a special annealing sequence. Two samples from each solid solution were studied by powder X‐ray diffraction and the structures of Lu21Rh10.36In3.55, Lu21Rh12.43In1.57, Lu21Pd9.74In4.26, Lu21Pd10.19In3.81, Lu21Pt9.26In4.70 and Lu21Pt9.93In4.07 were refined from single crystal X‐ray diffractometer data. All phases crystallize with coloring variants of the Y3Rh2 type structure, space group I4/mcm (No. 140). The Lu21T14–xInx phases are built up from a tetragonal rod packing of columns that consist of a condensation of square prisms and square antiprisms of the lutetium atoms that are centered by the indium and transition metal atoms. These columns condense with the substructure of coordination number 9 and 11 polyhedra around the Pt2 and In1/Pt5 atoms. The striking features of the ternary samples concern small defects on the transition metal 16 l sites and T/In mixing on the sites 16 l and 4c.

Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for Infrared optoelectronic devices. In this work, the temperature dependent photoluminescence (TDPL) analysis of In-rich InxGa1−xAs (x = 0.65: S1, x = 0.661: S2, and x = 0.667 S3) samples is of the central focus. The S-shaped behavior recorded at low temperature range in the III-V ternary is quantitatively studied herein by Localized State Ensemble (LSE) model. A comparison between the semi-empirical evolution of luminescence versus temperature and our numerical simulation proves the adequacy of computational details, used in LSE model, in well reproducing the S-shape feature. The numerical simulation well matched with PL spectra proving that the localization phenomenon is stronger when increasing the Indium mole fraction. The clustering effect in In-rich structure seems to be beneficial for enhancing the carrier localization within InxGa1−xAs by localizing carriers from away extended defects that behave probably as non-radiative centers. This is indicative of the utmost importance of localization phenomenon in trapping carriers within localized states instead of dislocations and defects, owing to clustering of indium atoms.

The system Ho–Ni–In at 870 K

The components interaction in the Ho–Ni–In system was investigated by X-ray powder diffraction and, partially, scanning electron microscopy with energy-dispersive X-ray spectroscopy. Isothermal section of the phase diagram was constructed in full concentration range at 870 K. The samples were synthesized in an arc-furnace on a water-cooled Cu-plate under an argon atmosphere and annealed in silica tubes at 870 K for 720 h. The phase analysis was performed by X-ray powder diffraction method. Twelve ternary compounds, namely HoNi 9 In 2 (YNi 9 In 2 -type structure), Ho 4 Ni 11 In 2 0 (U 4 Ni 11 Ga 2 0 -type structure), HoNi 4 In (MgCu 4 Sn-type structure), Ho 10 Ni 9 In 20 (Ho 10 Ni 9 In 20 -type structure), HoNi 1.0-0.5 In 1.0-1.5 (ZrNiAl-type structure), Ho 2 Ni 2 In (Mn 2 AlB 2 -type structure), Ho 2 Ni 1.8 In (Mo 2 FeB 2 -type structure), Ho 5 Ni 2 In 4 (Lu 5 Ni 2 In 4 -type structure), Ho 11 Ni 4 In 9 (Nd 11 Pd 4 In 9 -type structure), Ho 6 Ni 2 In (Ho 6 Co 2 Ga-type structure), ~ Ho 6 NiIn 2 (unknown structure) і Ho 13.35 Ni 3.17 In 3.48 (Lu 14 Co 3 In 3 -type structure) exist in the Ho–Ni–In system at the temperature of annealing. The substitution of Ni for In was observed for HoNi 1.00-0.50 In 1.00-1.50 compound. Besides, Ho can enter the structure of NiIn (CoSn-type structure) compound leading to formation of including subtraction type solid solution, which is stable up to 8 at. % Ho. The composition of this solid solution can be described by the formula Ho 0-0 . 08 NiIn 1-0 . 94 . The inclusion of holmium and indium atoms in position (2 e ) with the simultaneous exclusion of a small amount of indium atoms from position (1 a ) takes place in the homogeneity range of this solid solution. The character of interaction between the components in the ternary Ho–Ni–In system is similar to other related system R – T –In ( R – rare earth of the yttrium subgroup). The common feature of all these systems is the existence of large number isotypical ternary compounds, the formation of homogeneity range for compounds with ZrNiAl-type structure and including-subtraction type solid solutions based on the binary compound NiIn. Ke y words: holmium, indium, ternary compound, ternary system, isothermal section.

Indium modified zirconia coupling with HZSM-5 for syngas conversion to aromatics

Metal oxide-zeolite (OX-ZEO) bifunctional catalysts have been shown to have excellent aromatic selectivity and catalytic stability in syngas conversion; however, low CO conversion hinders their further development. In this paper, a series of In-ZrO2 bi-metallic oxides with In/Zr molar ratio ranging of 1/100−1/1 were prepared. After thoroughly investigated by X-ray diffraction, transmission electron microscopy, N2 sorption, pyridine-adsorbed infrared spectroscopy, X-ray photoelectron spectroscopy, electron paramagnetic resonance and temperature programmed desorption technologies, we found that introduction of indium has significantly influence on the catalytic performance due to the variation of sample's physicochemical properties. Indium species was benefit to the dissociation of H2 that promotes CO activation. Nevertheless, it also induced the formation of more CH4. In-ZrO2 oxide with In/Zr ratio of 1/50 showed CO conversion of 18.2% with the selectivity of oxygenates of 86.4%. After combined with H-ZSM-5, In/Zr=1/50&H-ZSM-5 gave CO conversion of 46.5% with C5+ selectivity of 62.6% and the aromatic selectivity in C5+ reached 93.4%. However, the catalytic stability of this bifunctional catalyst was gradually decreased due to the aggregation of indium atoms.

Ab initio calculations of electronic properties, frequency dispersion of dielectric coefficients and the edge of the optical absorption of TlInS-=SUB=-2-=/SUB=-<Sn> single crystals

Calculations of the band structure and density of states for supercells of TlInS2 and TlInS2<Sn> semiconductor crystals with monoclinic singony within the density functional theory (DFT) are presented. In DFT calculations, the Coulomb repulsion (the Hubbard parameter (U)) was taken into account in order to correctly describe the band gap (Eg) of crystals. It is shown that the maximum of the valence band and the minimum of the conduction band of TlInS2 are located at the center (point ) of the Brillouin zone, which points to the direct energy of the band gap of the TlInS2 and TlInS2<Sn> crystals. Thrue results of calculating the band structure and features of the distribution of the density of electronic states in TlInS2 and TlInS2<Sn> are discussed. TlInS2 single crystals doped with 0.1 mol.% tin (TlInS2<0.1 mol.% Sn>) were synthesized and then grown by the Bridgman--Stockbarger method. The frequency dispersion of the dielectric coefficients and conductivity of a TlInS2 and TlInS2<0.1 mol.% Sn> single crystals in the frequency range f=5·104-3.5·107 Hz is studied. It is shown that relaxation losses occur in TlInS2<Sn>. A hopping mechanism of ac charge transfer in TlInS2<Sn> has been established. In TlInS2<Sn>, the parameters of localized states, such as the density of states near the Fermi level and their energy spread, the average hopping time and distance, and the concentration of deep traps, are estimated. The optical properties of TlInS2 and TlInS2<0.1 mol.% Sn> single crystals have been studied. The values of Eg for direct optical transitions in TlInS2 and TlInS2<0.1 mol.% Sn> crystals were obtained from the optical absorption spectra. It has been shown that the introduction of 0.1 mol.% Sn, which replaces indium atoms, into TlInS2 reduces the value of Eg, for example, at 150 K from 2.539(TlInS2) to 2.486 eV (TlInS2<0.1 mol.% Sn>). From optical measurements, the average temperature coefficient of the band gap d Eg/d T=-7·10-4 eV/K for TlInS2<Sn> was calculated. The decrease in the band gap of the TlInS2Sn> single crystal with respect to TlInS2 is 16 meV at 300 K and 53 meV at 150 K. Keywords: supercell, semiconductor TlInS2, tin doping, monoclinic syngony, density functional theory, electronic structure, single crystals, dielectric properties, optical absorption, charge transfer, parameters of localized states.

Evolution of microstructure of IGZO ceramic target during magnetron sputtering

In this study, influence of magnetron sputtering on indium gallium zinc oxide (IGZO) ceramic target was studied to improve its performance and utilization. Results indicated that state of the target such as target grain uniformity, micro defects, C element pollution, and secondary phase showed significant influence on magnetron sputtering process. Atoms located in small grains were easily bombarded out of IGZO target, and grains with slow sputtering rate protruded from target surface. Porous microstructure of IGZO ceramic created abnormal electric field of the target during sputtering, resulting in the poisoning of target. Moreover, more indium atoms were sputtered from the target, and the proportion of In after sputtering decreased by 0.62–0.97%. The difference in sputtering rates between secondary phase and main phase led to the formation of IGZO cladding layer with poor conductivity under the combined action of sputtering and re-sputtering. In sum, these findings may provide strong guidance for further improvement and performance enhancement of IGZO sputtering target.

Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

We have demonstrated the role of thermal annealing treatment after InGaN quantum well layer growth to improve the interface morphology and luminescence properties of InGaN/GaN multiple quantum wells (MQWs). X-ray diffraction and transmission electron microscope analyses reveal that better structural properties are achieved by appropriately increasing the ramp-up time as well as relatively decreasing the annealing temperature as the interface quality of MQWs is improved. Moreover, the photoluminescence (PL) and electroluminescence (EL) measurements confirm the higher crystal quality and optical properties of InGaN/GaN MQWs. The reason may be the redistribution of indium atoms improves the homogeneity of localized states in MQWs, and the In-rich clustering behavior is obviously alleviated. This annealing method is feasible and can lead to obtaining high-performance semiconductor optoelectronic devices.