Abstract
Quaternary Indium gallium arsenic antimony (InGaAsSb) compounds is indispensable as the active layer of diode lasers emitting at 1.75–4.4 μm, which are used in optoelectronic devices. However, the course of the high-temperature instability of the quantum well structure, which is closely related to the diffusion of indium (In) and antimony (Sb) atoms, is still not clear due to the system's complexity. In this paper, the diffusion process of indium and antimony atoms by thermal treatment, and the changes in the structural and optical properties of the InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) were investigated. The InGaAsSb/AlGaAsSb MQWs were treated with a treatment time of 40 s at different annealing temperatures. X-ray diffraction (XRD) and Raman spectra show that with the increase of annealing temperature, the structure of MQWs were destroyed more seriously, and the segregation of indium and antimony becomes more serious. The luminescence characteristics of MQWs with component segregation were investigated by photoluminescence (PL) spectra.
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