Addition Of Indium Research Articles

Effects of Antimony and Indium Addition on Wettability and Interfacial Reaction of Sn-3.0Ag-0.5Cu Lead Free Solder on Copper Substrate

The effects of antimony and indium addition on wettability and interfacial reaction of Sn-3.0Ag-0.5Cu lead free solder on copper substrate were investigated. The experimental results showed the melting point of solder alloy containing 0.5 wt.% In and 0.5 wt.% Sb were slightly increased about 3.66°C. The pasty range of solder alloys were increased about 6°C while the undercooling of solder alloys were decreased. The microstructures of solder alloy were contained of In and Sb consists of Ag3Sn, Cu6(Sn,In)5, SnIn, Ag3(Sn,In) and SnSb intermetallic compounds (IMCs) dispersed on Sn-rich phase. The wettability of solder alloys were improved by increasing soldering times. In addition, the thickness of intermetallic compounds (Cu6Sn5) were obviously increased with increasing soldering times.

ПОВЫШЕНИЕ АНОДНОЙ УСТОЙЧИВОСТИ АЛЮМИНИЕВОГО СПЛАВА АБ1 (Аl+1%Be) ЛЕГИРОВАНИЕМ ИНДИЕМ

PURPOSE. The anodic behavior of indium doped AB1 alloy is studied in the NaCl electrolyte medium in the region of indium concentration up to 0.5 wt % by a potentiostatic method. The doped alloys are demonstrated to have a more satisfactory corrosion resistance than the initial alloy AB1. METHODS. The studies are performed in the NaCl electrolyte medium using the PI-50-1.1 potentiostat. RESULTS AND THEIR DISCUSSION. Indium additions reduce the corrosion rate of AB1 alloy by 75% in the investigated media. When the indium concentration increases up to 0.5 wt % the corrosion rate of AB1 alloy decreases monotonically. It is shown that the improved corrosion resistance of AB1 alloy when doped with indium is explained by its modifying effect on the structure of the eutectic aluminum-beryllium alloy AB1, as well as by increasing the true surface of the anode or by compacting the protective phase layer of oxides with poorly soluble oxidation products. CONCLUSIONS. The conducted studies show that doping of the aluminum-beryllium alloy of eutectic composition (AB1) with indium improves its corrosion resistance, which is accompanied by a shift of the alloy free corrosion potential in the positive region.

Whisker Mitigation Mechanisms in Indium-Doped Tin Thin Films: Role of the Surface

The effect of indium doping on whisker mitigation in tin electroplated on copper has been investigated. Whisker growth studies show that indium addition to Sn effectively mitigates whisker growth. Cross-section images showed predominantly columnar grains in the thin film. X-ray photoelectron spectroscopy studies of the oxide revealed a mixture of In2O3 and SnO2, along with a stoichiometrically defective oxide that can serve as a vacancy source at the metal-oxide interface. In addition, Auger electron spectroscopy showed In segregation at the grain boundaries as well as In enrichment just below the oxide layer. Cyclic voltammetry tests showed that the anodic behavior of the thin films exhibits active/passive transition where the passive current increases significantly upon doping Sn with In. We interpret these surface-related results in terms of a less tenacious oxide that permits reduction of in-plane compressive residual stress, thereby minimizing the driving force for whisker formation and growth.

Effects of Indium Content on Microstructural, Mechanical Properties and Melting Temperature of SAC305 Solder Alloys

The present study investigated the effects of indium (In) addition on the microstructure, mechanical properties, and melting temperature of SAC305 solder alloys. The indium formed IMC phases of Ag3(Sn,In) and Cu6(Sn,In)5 in the Sn-rich matrix that increased the ultimate tensile strength (UTS) and the hardness while the ductility (% EL) decreased for all In containing solder alloys. The UTS and hardness values increased from 29.21 to 33.84 MPa and from 13.91 to 17.33 HV. Principally, the In-containing solder alloys had higher UTS and hardness than the In-free solder alloy due to the strengthening effect of solid solution and secondary phase dispersion. The eutectic melting point decreased from 223.0°C for the SAC305 solder alloy to 219.5°C for the SAC305 alloy with 2.0 wt% In. The addition of In had little effect on the solidus temperatures. In contrast, the liquidus temperature decreased with increasing In content. The optimum concentration of 2.0 wt % In improved the microstructure, UTS, hardness, and eutectic temperature of the SAC305 solder alloys.

Enhancement of nano-silver chip attachment by using transient liquid phase reaction with indium

Nano-silver paste is considered one of the most promising interconnection materials for high-power and high-temperature applications owing to its excellent electrical and thermal properties and low bonding temperature. However, sintered silver joints have several critical issues, including high porosity, poor wettability, and poor high-temperature reliability in air. In this study, we report that these problems can be resolved by introducing indium into the sintered silver joints. To support these claims, the microstructures and die shear strengths after bonding and high-temperature aging at 300 °C in air of both sintered nano-silver joints and sintered silver-indium joints are reported. The fracture surfaces after die shear tests are also analyzed. With the addition of indium, the porosity of the sintered joint decreases substantially, and the wettability improves considerably. Most importantly, the oxidation at high temperature is no longer an issue. The die shear strengths remain higher than 40 MPa even after aging at 300 °C in air for 1000 h.

Backlighting the European Indium Recycling Potentials

SummaryWith increased understanding of the effects of human activities on the environment and added awareness of the increasing societal value of natural resources, researchers have begun to focus on the characterization of elemental cycles. Indium has captured significant attention due to the potential for supply shortages and nonexistent recycling at end of life. Such a combination of potentially critical features is magnified for countries that depend on imports of indium, notably many European countries. With the aims of analyzing the dynamics of material flows and of estimating the magnitude of secondary indium sources available for recycling, the anthropogenic indium cycle in Europe has been investigated by material flow analysis. The results showed that the region is a major consumer of finished goods containing indium, and the cumulative addition of indium in urban mines was estimated at about 500 tonnes of indium. We discuss these results from the perspective of closing the metal cycle in the region. Securing access to critical raw materials is a priority for Europe, but the preference for recycling metal urban mines risks to remain only theoretical for indium unless innovations in waste collection and processing unlock the development of technologies that are economically feasible and environmentally sustainable.

Experimental study on the thermal storage performance and non-isothermal crystallization kinetics of pentaerythritol blended with low melting metal

This paper discusses the thermal cycling characterization, properties, and crystallization kinetics of pentaerythritol (PE) added with 0.1, 0.3 and 0.5 wt.% of indium (In). The TG and FTIR analysis confirmed the thermal and chemical stability of the PCM samples after 100 thermal cycles. DSC results indicated that the enthalpy of transition of PE with 0.1, 0.3 and, 0.5 wt.% of indium decreased by 9.4, 10.4 and, 11.4% after 100 thermal cycles. The onset temperature and transition enthalpy of PE decreased from 181.4 to 181.1 °C, and 264 to 255 kJ/kg respectively due to the addition of 0.5 wt.% of indium. The T-history analysis showed that the thermal conductivity of PE enhanced from 0.106 to 0.1189 W/m­K due to the addition of 0.5 wt.% indium. The non-isothermal crystallization kinetics revealed that the time for crystallization of PE decreased due to the addition of indium.

Thermodynamic characteristics, microstructure and mechanical properties of Sn-0.7Cu-xIn lead-free solder alloy

The microstructure and mechanical properties of Sn-0.7Cu solder alloy and Sn-0.7Cu with 1.0–5.0 wt% indium addition were investigated in this study. With indium added into Sn-0.7Cu solder, the melting temperature decreased and the reaction temperature increased. Coarse grains of Cu6(Sn,In)5 intermetallic compounds (IMCs) were formed in the alloy matrix when the indium content increased to 1.0 wt%. Indium was evenly distributed in the β-Sn phase and Cu6(Sn,In)5 IMCs in as-prepared In-containing solder alloys. After isothermal aging, indium accumulated gradually in the Cu6(Sn,In)5 IMCs while decreasing its content in the β-Sn phase. Tensile test results indicated that the ultimate tensile strength increased obviously and that the elongation decreased significantly with indium addition. Sawtooths were observed in the stress-strain curves of all aged In-containing alloys. A model describing a coherent relationship between the β-Sn phase and the Cu6(Sn,In)5 phase was proposed to explain this phenomenon. The fracture surface of the Sn-0.7Cu alloy exhibited a ductile fracture mode while a mixed ductile-brittle fracture mode occurred when excessive indium was added into Sn-0.7Cu alloys.

In2O3-modified Cu/SiO2 as an active and stable catalyst for the hydrogenation of methyl acetate to ethanol

A series of indium oxide-modified Cu/SiO2 catalysts were synthesized and used to produce ethanol via methyl acetate hydrogenation. In-Cu/SiO2 catalyst containing 1.0 wt% In2O3 exhibited the best catalytic activity and stability. The physicochemical properties of the synthesized catalysts were investigated using several characterization methods and the results showed that introducing suitable indium to Cu/SiO2 increased the copper dispersion, diminished the copper crystallite size, and enriched the surface Cu+ concentration. Furthermore, the Cu/SiO2 catalyst gradually deactivated during the stability test, which was mainly attributed to copper sintering and the valence change in surface copper species. In contrast, indium addition can inhibit the thermal transmigration and accumulation of copper nanoparticles to stabilize the catalyst.

Properties and microstructure changes in Au-Cu-based alloy with indium addition

In this work, the effects of indium addition on the microstructure, corrosion resistance and hardness in as-cast Au-Cu-based alloys were investigated. The experimental results indicated that as-cast Au-Cu-based shown a typical dendritic structure, and the secondary dendrite arm spacing of alloy was significantly decreased by adding indium element, especially when the In-rich phase existed at interdendritic region. The as-cast samples without indium and with 1 wt.% In were a single Au-Cu-based solid solution with face-centered cubic (f.c.c.) structure. Moreover, the In-rich phase of the alloy with 3 wt.% In shown granular structure, but with 5 wt.% In was network structure. With the indium content increasing, the hardness of alloy was significantly increased and exhibited better Hall-Petch type relationship with the secondary dendrite arm spacing. Minor indium addition enhanced the corrosion resistance of alloy, but when an In-rich phase generated at interdendritic region, the corrosion rate was increased due to the micro-galvanic effect and also affected by the structure of the In-rich phase.

Synthesis and properties of InxAlyGa1–x–yPzAs1–z/GaAs heterostructures

Phase equilibria in the In–Al–Ga–P–As system have been analyzed in terms of a simple solution model. We have calculated the stability limits of InAlGaPAs solid solutions on GaAs substrates in the temperature range 937–1223 K. The addition of indium to AlGaPAs solid solutions leads to a slight decrease in growth rate under diffusion control and a considerable increase under kinetic control. Moreover, the addition of indium to AlGaPAs solid solutions has been shown to reduce the full width at half maximum of their X-ray rocking curves and photoluminescence spectra and increase the photoluminescence intensity. Increasing the indium concentration in In x Al y Ga1–x–yP z As1–z solid solutions to x > 0.3 extends their stability region, increases their band gap, and reduces the composition region of lattice-matched In x Al y Ga1–x–yP z As1–z/GaAs heterostructures, but these become thermal expansion-matched. With increasing indium concentration in the solid solutions, the distribution coefficients of P and As decrease, whereas those of Al and In increase.

Influence of Indium and Antimony Additions on Mechanical Properties and Microstructure of Sn-3.0Ag-0.5Cu Lead Free Solder Alloys

In this research, we investigated the influence of indium and antimony additions on the microstructure, mechanical and thermal properties of Sn-3.0Ag-0.5Cu lead free solder alloys. The results revealed that the addition of 0.5 wt.%InSb into SAC305 solder alloys resulted to a reduced melting temperature by 3.8 °C and IMCs phases formed new Ag3(Sn,In) and SnSb in the Sn-rich matrix with a decreased grain size of 28%. These phases improved the mechanical properties of solder alloys. In addition, the mechanical properties of SAC305 solder alloys increased by adding 0.5 wt.%InSb, resulting in an increase of ultimate tensile strength of 24%, but the percent elongation decreased to 45.8%. Furthermore, the Vickers microhardness slightly increased of the SAC305 solder alloys.

Carbon dioxide reforming of methane over Ni–In/SiO2 catalyst without coke formation

It was found that coke formation on Ni/SiO2, used in dry reforming of methane, can be eliminated completely by addition of indium to the catalyst. The interaction of the two metals was suggested by the results of TPR, CO-TPD and XPS measurements. The presence and uniform distribution of NiIn and Ni2In alloy nanoparticles after reduction at 700°C of the calcined catalyst was shown by HAADF-STEM, HRTEM and EDX analysis. The indium atoms dilute the nickel surface inhibiting the formation of multiple-bonded carbon species thereby hindering the development of carbon nanostructures on the catalyst surface during dry reforming.

Metal release and cell biological compatibility of beta-type Ti-40Nb containing indium.

Small indium (In) additions up to 5 wt % to the beta-type Ti-40Nb alloy effectively improve its mechanical biofunctionality. The impact on its biocompatibility is addressed in this work. Comparative electrochemical polarization studies and inductively coupled plasma optical emission spectrometry analyses were conducted in Tris-buffered saline (on the basis of 150 mM NaCl) with pH 7.6 and 2.0 at 310 ± 1 K with Ti-6Al-4V as reference. The metal ion releases from beta-type alloys were generally very low, for example, those of In3+ ions from (Ti-40Nb)-4In specimens were below 6 × 10-7 mmol/cm2 . X-ray photoelectron spectroscopy revealed the passivation mainly by Ti- and Nb-oxides with traces of In-oxides as the dominating surface process. In vitro studies demonstrate a better human bone marrow stromal cells (hBMSC) activity on the beta-type alloys in comparison to CP-Ti (grade 2), which is mainly due to their high Nb content. At 24 h after seeding on (Ti-40Nb)-4In the metabolic activity of hBMSC was 1.5-fold higher and after 11 days, the tissue non-specific alkaline phosphatase activity was 1.8-fold higher relative to values for CP-Ti. Surface treatments, like chemical etching or plasma oxidation, change the surface topography and the thickness and composition of the oxide layers, but they are not effective in further improving the cell response. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 106B: 1686-1697, 2018.

Effect of indium addition on interfacial IMC growth and bending properties of eutectic Sn–0.7Cu solder joints

The microstructure and growth behaviors of interfacial IMCs between the Sn–0.7Cu–xIn (x = 0–5.0 wt%) solder and Cu substrate under solid aging were investigated. Bending test was conducted to evaluate the mechanical properties of Cu/Sn–0.7Cu–xIn/Cu solder joints. The needle-like Cu6(Sn,In)5 IMCs formed at interface instead of Cu6Sn5 in as-soldered In-containing solder joints. During solid aging, indium addition had little influence on the growth of Cu6Sn5 IMCs, but strongly suppressed the growth of Cu3Sn IMCs. In Sn–0.7Cu–5.0In/Cu couple, the maximum solubility of indium in Cu6Sn5 and Cu3Sn was about 4.9 and 3.1 at.% respectively which was independent of aging temperature. The average composition of Cu6(Sn,In)5 and Cu3(Sn,In) were given as Cu6(Sn0.89,In0.11)5 and Cu3(Sn0.88,In0.12). After indium addition, the diffusion coefficients were found to be lower than that of Sn–0.7Cu/Cu couple and the activation energy for the growth of Cu3Sn increased with the increase of indium content. Doping indium into Sn–0.7Cu solder improved the bending properties of solder joints. Interfacial cracks were suppressed effectively after long time aging with indium addition.

Electrochemical behavior of Mg-Al-Zn-In alloy as anode materials in 3.5 wt.% NaCl solution

The microstructures and discharge products of Mg-6%Al-3%Zn and Mg-6%Al-3%Zn-0.5%In alloys are investigated by morphology observation, phase characterization, and composition analysis. Hydrogen collection, weight-loss measurement, and electrochemical tests are conducted to discuss their corrosion and discharge behaviors. An indium aroused dissolution–reprecipitation mechanism for Mg activation is proposed. Results suggest that the dissolution–reprecipitation mechanism can suitably interpret the indium-activation effect. Indium addition into Mg promotes Mg dissolution through synergistic effects, which involve increasing the second-phase amount, generating less-protective products, promoting products self-peeling, and dissolution–reprecipitation of indium. The homogenized Mg-Al-Zn-In alloy performs desirable corrosion resistance and discharge capability and thus is a promising candidate for applications as anode materials.

Study of intermetallic compounds (IMC) that form between indium-enriched SAC solder alloys and copper substrate

This paper evaluates the characteristics of the intermetallic compounds (IMC) that form between Indium-enriched SAC solder alloys and Copper substrate. In this study, Indium was added to a commercial SAC305 solder (96.5 wt.% Sn, 3 wt.% Ag, 0.5 wt.% Cu) at three different compositions, 0.5, 5, and 10 wt%. To observe IMC growth during the liquid state of the solder droplet, the experimental matrix consisted in three soldering temperatures (220, 275, and 300 °C), and the molten solder was kept at this temperature for 2, 5, and 8 s. Fast cooling followed each solder test to complete solidification. The same procedure was repeated for the three levels of Indium. The Copper substrate/solder alloy interface was examined using light microscopy, scanning electron microscopy, and energy dispersive spectroscopy. Statistical analysis was performed on the IMC thickness data obtained from the long profile analyses. Using Arrhenius analysis, the activation energy for IMC formation and growth was calculated to be approximately 6.7, 5.1, and 10.8 kCal/mol for the SAC305 alloys with 0.5, 5.0, and 10 wt% Indium additions, respectively. As expected, Cu6Sn5, Cu3Sn, Ag3Sn, In3Sn (β), InSn4 (γ), and AgIn2 were observed.

HYBRID FUNCTIONAL MATERIALS FORMING THE METAL STRUCTURE WITH OPTIMAL IMPERFECTION FOR STORAGE OF HYDROGEN IN HYDRIDE FORM

The paper investigates the samples of Ni-B and Ni-In composites in the form of films synthesized by an electrochemical method having a high degree of defectiveness and shows the electrochemical processes for their preparation, in which the experimental data of the influence doping additions of boron and indium on the hydrogen permeabilities of synthesized electrochemical complexes based on nickel Nix-By-Hz and Nix-Iny-Hz are given. It is shown that by creating traps (structural, impurity) for hydrogen by introducing additional elements into the metal structure or by changing the structure (intermetallides), also by other methods, the hydrogen solubility of the metal can be changed to a greater or lesser extent depending on the technical requirements. Ni-B samples were obtained in the sulfamate nickel electrolyte using boron compounds of the class of higher polyhedral borates Na2B10H10. The use of nano forming boron additives provides a measured hydrogen content in Nix-By-Hz samples about of 600 cm3 / 100 g. Nickel - indium composites were obtained by electrolytic deposition on copper substrates (0.05 mm thick), with electrolyte composition: NiSO4×7H2O = 140 g / l; Na2SO4×10H2O=20 g / l; and In2 (SO4) 3 which concentration varied from 1 g / l to 12 g / l. Variations in the amount of In2(SO4)3 ensured the production of Ni-In composites with different component ratios. The obtained data made it possible to select the optimal mode of deposition of Ni-In plating in the In2(SO4)3 electrolyte. In order to determine the effect of each of the electrodeposition parameters on the properties of the samples, only one parameter varies: either the cathode current density or the concentration of indium in the electrolyte. The samples of different concentrations of In are synthesized and studied. Their phase composition was determined. Xray phase analysis reveals in the Ni-In composites synthesized from electrolytes with In2(SO4)3 concentration of more than 2 g / l, a phase corresponding to the intermetallide η-In27Ni10. For the first time in the practice of studying sorption, electrochemical composites Nix-Iny, including subsequent thermal desorption of hydrogen, are studied by implanting deuterium into the samples. It is demonstrated spectra of deuterium thermal desorption from Ni70In30Dx composites, which allowed determining the temperature ranges of desorption of ion-implanted deuterium depending on the dose of implantation. It is confirmed that a Ni 70In30 composite capable of retaining doped deuterium (hydrogen) has been obtained. It is shown that it is permissible to obtain samples of a Nix-Iny-Dz composite with a deuterium content of up to 2 at. D/at. Met, that corresponds to 5.3 wt. % (for composites of this composition).

Effect of Indium Additions on the Formation of Interfacial Intermetallic Phases and the Wettability at Sn-Zn-In/Cu Interfaces

The wettability of copper substrates by Sn-Zn eutectic solder alloy doped with 0, 0.5, 1, and 1.5 at.% of indium was studied using the sessile drop method, with flux, in air, at 250°C and reflow time of 3, 8, 15, 30, and 60 min. Wetting tests were performed at 230, 250, 280, 320, and 370°C for an alloy containing 1.5 at.% of indium, in order to determine activation energy of diffusion. Solidified solder/substrate couples were studied using scanning electron microscopy (SEM), the intermetallic phases from Cu-Zn system which formed at the solder/substrate interface were identified, and their growth kinetics was investigated. The ε-CuZn4 was formed first, as a product of the reaction between liquid solder and the Cu substrate, whereas γ-Cu5Zn8 was formed as a product of the reaction between ε-CuZn4 and the Cu substrate. With increasing wetting time, the thickness of ε-CuZn4 increases, while the thickness of ε-CuZn4 does not change over time for indium-doped solders and gradually disappears over time for Sn-Zn eutectic solder.

Eliminating Whisker Growth by Indium Addition in Electroplated Sn on Copper Substrate

Whisker growth from Sn coatings is a reliability concern in electronic packages, until recently mitigated by Pb addition. Recently, it was demonstrated that doping with In dramatically reduces whisker growth in 1 μm thick Sn. Here, we present the results of In-doping on whisker growth from 3 μm and 6 μm thick Sn-films and explore the reasons behind this mitigation, and compare the results with a baseline sample of pure Sn and a control sample of tri-layer Sn-In-Sn, all subjected to identical thermal treatments. It is shown that In addition completely stops whisker growth from electroplated Sn. The impact of In addition on the film microstructure and the role of the surface oxide coating are investigated. Previous work had shown that while In addition reduces grain boundary diffusivity, it does not fully account for the observed dramatic reduction of whisker growth. In this work, it is shown by Auger electron spectroscopy and x-ray photoelectron spectroscopy that In is incorporated in the surface-oxide. Since whisker-growth is contingent on the presence of a tenacious surface-oxide, this suggests that the alteration of the oxide properties may be responsible for the observed reduction in whisker growth. Finite element modeling is utilized to demonstrate that a reduction of the elastic modulus of the surface oxide would reduce the driving force of Sn whisker growth, thus proffering a rationale for the effect of In incorporation.