Abstract
The wettability of copper substrates by Sn-Zn eutectic solder alloy doped with 0, 0.5, 1, and 1.5 at.% of indium was studied using the sessile drop method, with flux, in air, at 250°C and reflow time of 3, 8, 15, 30, and 60 min. Wetting tests were performed at 230, 250, 280, 320, and 370°C for an alloy containing 1.5 at.% of indium, in order to determine activation energy of diffusion. Solidified solder/substrate couples were studied using scanning electron microscopy (SEM), the intermetallic phases from Cu-Zn system which formed at the solder/substrate interface were identified, and their growth kinetics was investigated. The ε-CuZn4 was formed first, as a product of the reaction between liquid solder and the Cu substrate, whereas γ-Cu5Zn8 was formed as a product of the reaction between ε-CuZn4 and the Cu substrate. With increasing wetting time, the thickness of ε-CuZn4 increases, while the thickness of ε-CuZn4 does not change over time for indium-doped solders and gradually disappears over time for Sn-Zn eutectic solder.
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