Increasing Bias Voltage Research Articles

Morphology and Wettability of Polystyrene film on QCM Sensor Caused by Oxygen Plasma with DC Bias

Surface wettability and morphology are important aspects of developing QCM sensors for chemical sensors and biosensors. The functionality and morphology of the sensitive coating on the sensor surface affect the sensor sensitivity and selectivity. Various materials and methods to improve the functionality and morphology of the sensor surface have been developed, one of which is plasma. Species and parameters of the generated plasma play an important role in the treatment. One parameter is the DC-bias voltage of RF plasma, which plays an important role in plasma generation and bombardment on the surface being modified. This work shows the effect of the DC bias of the 2 MHz RF plasma with oxygen species. Surface functionality and morphology modification of the polystyrene film on the QCM sensor was done by surface modification using oxygen plasma. Partial etching of the polystyrene film occurred when treated with oxygen plasma generated using 2 MHz with negative DC-bias. CII, CO+, and CO were detected during the exposure of oxygen plasma on polystyrene film, indicating a chemical reaction between the plasma species, oxygen plasma, and the polystyrene. Observation by optical microscope and SEM showed the occurrence of partial etching on the polystyrene film. As there is no masking, the partial etching occurred randomly. The average size of the etched film increased with the DC bias voltage, but the percentage of the etched area was not. The oxygen plasma converts the polystyrene film from hydrophobic to hydrophilic, but hydrophobicity increases with the DC bias voltage. HIGHLIGHTS Polystyrene surface treatment using oxygen plasma can be used to alter the surface hydrophobicity. The DC bias plays important role in the surface modification. High DCV bias gives stronger plasma energy which may etched the polystyrene film. Observation using SEM shows part of the polystyrene film was etched as the DC bias voltage increase. The amount of the etched surface can be measured using optical microscope and processed using ImageJ. Increasing the DC bias result in a wider etched film. GRAPHICAL ABSTRACT

Quantitative characterization on influence of surface particles on corrosion behavior of multiarc ion plated CrAlN coatings

Surface particles on multiarc ion plated coatings are common defects, and their influence on the service performance of coatings is rarely defined. The CrAlN coatings were deposited on the tungsten steel (YG8) substrates using multiarc ion plating. The effects of the substrate bias voltages and nitrogen flow rates on the quantity of the surface particles were investigated, and the influence of the surface particles on the corrosion resistance of the coatings is quantitatively characterized. The morphology of surface particles was characterized using a scanning electron microscope. The quantity of the surface particles was counted by image software. The corrosion resistance of the coatings was evaluated through an electrochemical workstation. The results show that the quantity of surface particles decreased with the increase in the substrate bias voltage and nitrogen flow rate. The corrosion resistance of the coatings showed a positive correlation with the quantity of the surface particles, and it decreased dramatically when the quantity of the surface particles exceeded 111/10 000 μm2. The corrosion mechanism of the coatings was attributed to the defect-induced pitting corrosion.

Insights into 1200 °C steam oxidation behavior of Cr coatings with different microstructure on Zircaloy-4 alloys for enhanced accident tolerant fuel cladding

In order to improve the 1200°C steam oxidation properties of Cr-coated zirconium alloy accident tolerant fuel cladding tubes, chromium coatings with various micro-structures were fabricated by bipolar high-power impulse magnetron sputtering technology. The microstructures of chromium coatings transforms from unconsolidated column structure to dense & column-oblate structure with the bias voltage increase. Hardness and elastic modulus values of optimal chromium coatings are approximately 19.1 GPa and 374.8 GPa, respectively, which are 2.09 and 1.60 times higher than those of chromium coatings with unconsolidated column structures. Optimal chromium coatings with dense & column-oblate structures display preferable 1200°C steam oxidation resistance because of possession lower weight gain value and thicker Cr2O3 oxide layer after 2 h exposure periods. The fabrication strategy of chromium coatings with dense & column-oblate structure is expected to pave the way for enhancing 1200 °C steam oxidation resistance for Cr-coated zirconium alloys.

Single-event burnout in β-Ga2O3 Schottky barrier diode induced by high-energy proton

Single-Event Burnout (SEB) can cause hard damage to devices, leading to permanent failure. However, previous studies have rarely explored the effects of high-energy proton irradiation-induced SEB in β-Ga2O3 Schottky Barrier Diode (SBD), and the underlying mechanisms remain largely unexplored. Experimental results indicate that the reverse bias voltage during irradiation is a critical factor influencing the failure of β-Ga2O3 SBD. Compared to 300 MeV proton irradiation without bias, the introduction of a 300 V reverse bias voltage results in a significant reduction in forward current density (JF). When the reverse bias voltage reaches 400 V or higher, the 300 MeV proton induces SEB in the device. The SEM image of the damaged region reveals that the irradiated device has “voids” formed due to the melting of the Ga2O3 material. Geant 4 and TCAD simulation results indicate that the burnout phenomenon is caused by the elevated lattice temperature inside the device, which results from the implantation of secondary particles under a high reverse bias voltage. As the reverse bias voltage increases, the maximum lattice temperature of β-Ga2O3 SBD also rises. When the reverse bias voltage is sufficiently high, the local lattice temperature inside the device reaches the melting point of Ga2O3 material, ultimately leading to SEB.

Analysis of Channel Current Noise in Small Nanoscale Metal Oxide Semiconductor Field Effect Transistors.

The shrinkage of metal oxide semiconductor field effect transistor (MOSFET) to the small size of the nanoscale results in changes in their channel current noise composition. This paper determines the channel current noise composition of 90nm MOSFET through experiments, and according to the device material and noise characteristics analysis, the channel current noise of 90nm and below is obtained, which not only contains thermal noise and suppressed channel shot noise, but also adds suppressed gate tunneling shot noise and cross-correlation noise. Then, Monte Carlo simulation of 10nm MOSFET noise is further used to determine the channel current composition of small size nanoscale devices. Subsequently, based on the device structure and fundamental characteristics of channel current noise, the channel current noise model is established. Finally, this model is employed to analyze the relationship between thermal noise, suppressed shot noise, cross-correlation noise, and channel current noise in relation to bias parameters and device characteristics. The theoretical results are basically consistent with the experimental and the simulated results, and the channel noise increases with the increase of bias voltage. This achievement holds promise for enhancing the operational efficiency, reliability, and lifetime of nanoscale small-sized MOSFET devices.

Optimizing substrate bias voltage to improve mechanical and tribological properties of ductile FeCoNiCu high entropy alloy coatings with FCC structure

Conventional hard coatings are limited in their tribological applications due to their high brittleness. High-entropy alloy (HEA) coatings, which combine high toughness and hardness, represent a new class of tribological coatings with great potential. The microstructure and stress state of HEA coatings can be significantly affected by the deposition parameters of magnetron sputtering, which can regulate their mechanical and tribological properties. In this study, DC magnetron sputtering with varying substrate bias voltages was used to deposit FeCoNiCu HEA coatings with an FCC single phase structure on 316 stainless steel. The microstructure, mechanical, and tribological properties of these coatings were studied in detail. The residual tensile stress of the coatings decreases, while toughness and hardness increase as the bias voltage increases. The coatings exhibited optimal toughness, highest hardness (11.3 GPa), and the lowest wear rate (as low as 6.01 × 10−5 mm3/N·m) when the bias voltage was set to −200 V. The formation of a metal oxide adhesion layer during friction improved the tribological properties of the coatings. This study demonstrates that optimizing the deposition bias voltage is an effective way to improve the mechanical and tribological properties of high-entropy, face-centered cubic alloy coatings, which are intrinsically tough and ductile.

The key role in the structure and properties of a novel CrNiTiMo high-entropy alloys films prepared by magnetron sputtering: Bias voltage

In this study, CrNiTiMo high-entropy alloys films were prepared on 304 stainless steel and silicon wafer substrates by direct current magnetron sputtering and the effects of bias voltages (0 to −200 V) on microstructure, chemical composition, hardness and corrosion resistance were investigated. The results showed that the surface of the CrNiTiMo HEAs films exhibited equiaxed nanoparticles and are composed of uniformly distributed Cr, Ni, Ti, and Mo elements. Meanwhile, the films developed a columnar structure and formed a biphasic structure with body-centered cubic solid solution and amorphous phases. The roughness decreased and then increased with increasing bias voltage, and the film deposited at −50 V had the lowest roughness (1.02 ± 01 nm), which also had a maximum hardness of approximately 9.52 ± 0.2 GPa and a maximum elastic modulus of approximately 187 ± 6 GPa. In addition, all films showed better corrosion resistance compared to 304 stainless steel substrates at 3.5 wt% NaCl solution. The corrosion current density (icorr) of the films decreased and then increased with increasing bias voltages and reached the lowest icorr of about 2.49 × 10−8A/cm2, indicating that the films deposited at a bias voltage of −50 V had the best corrosion resistance. These was attributed to the formation of the passivation films mainly composed of TiO2 and Cr2O3 and the improvement of the surface quality of the film as well as the refinement of the columnar structure and particles.

Effect of bias voltage on the structure and properties of CoCrFeNi high entropy alloy thin films prepared by magnetron sputtering

In this study, CoCrFeNi high entropy alloy thin films were prepared on 304 stainless steel and single crystal Si substrates using the direct-current magnetron sputtering process under different bias voltages. The effects of these bias voltages on the film micrographs, phase structure, surface roughness, corrosion resistance, and mechanical characteristics of thin films were studied by a scanning electron microscope, transmission electron microscope, X-ray diffractometer, atomic force microscope, electrochemical workstation and nanoindentation tester, respectively. The results indicated that all films exhibited equiaxed nano-scale grains and developed a columnar structure. Fe, Co, Cr, and Ni were uniformly dispersed in all films and all films displayed face centered cubic solid solution (FCC). At a bias voltage of 0 V, the CoCrFeNi HEAs film formed a FCC single phase. With increasing bias voltage, the crystallinity decreased and then increased, reaching the worst crystalline state at bias voltage of −200 V due to the fact that the structure of the film was composed of FCC nanocrystalline and amorphous biphasic structure. Meanwhile, the surfaces of the film prepared at bias voltage of −200 V exhibited the densest structures and the least roughness, with grain sizes reaching a minimum value of approximately 10 nm. In addition, columnar grains of the film prepared at a bias voltage of −200 V displayed the densest state and had the least size, thus this film displayed the best corrosion resistance of a minimum value 1.51 × 10−7 A/cm2, a maximum hardness of approximately 11.18 ± 0.2 GPa and a maximum elastic modulus of approximately 193 ± 2.8 GPa. The passivation films of CoCrFeNi HEAs films were mainly composed of Cr2O3.

Effect of arc deposition process on mechanical properties and microstructure of TiAlSiN gradient coatings

In order to successfully prepare a new advanced TiAlSiN gradient coating with Ti content gradually decreased but Al content gradually increased from the cemented carbide substrate to the outermost coating surface by arc ion plating, we deeply investigated the influence mechanisms of two important process parameters. These parameters include substrate bias voltage and arc current, which affect the mechanical properties and microstructure of the gradient coating. The results show that bias voltage and arc current directly affect the particle accumulation effect on the coating surface and the re-sputtering effect caused by high-energy ion bombardment, thus affecting the deposition efficiency of the coating and the formation of defects such as macro-particles and pits on the coating surface. The increase of bias voltage is conducive to the increase of the density of columnar crystals and nanocrystals. While the increase of arc current makes the coating with high Al content transform from columnar crystals to nanocrystals. The hardness and interfacial adhesion of the gradient coatings showed a tendency of firstly increasing and then decreasing with the increase of both bias voltage and arc current. When the bias voltage and arc current are -80 V and 160 A respectively, the coating has the best mechanical properties, its surface hardness reaches 36.94 GPa, and the interfacial adhesion exceeds 120 N. In addition, with the increase of bias voltage and arc current, particles are deposited on the surface of the coating with higher energy, which leads to the preferential orientation transition from (111) to (200) plane. The high hardness of TiAlSiN coating is mainly due to the formation of high Al content of fcc-TiAlN crystals and amorphous Si3N4 in the gradient-coated surface layer. The results have important theoretical and practical significance for developing new high-performance gradient coating tools.

Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 × 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, read out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 × 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 × 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively.

Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range

Four types of barrier detectors based on a type II InAs/InAsSb superlattice with a wide-gap barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The tested detectors differed in the type of doping of the active layer and the level and type of doping of the contact layer at the barrier. The epitaxial layers were deposited on GaAs (100) substrates using the molecular beam epitaxy method. The spectral and current–voltage characteristics of the analyzed detectors were compared. The highest current responsivities were observed in the structure with a p-type absorber (p+BpN+). Detectors with an n-type absorber (p+Bnn+, n+Bnn+, and nBnn+) show an increase in the current responsivity with an increase in the reverse bias voltage due to the reduction in the undesirable barrier in the valence band. Arrhenius characteristics for the dark current show that only in nBnn+ detectors, it was possible to limit the generation–recombination current. These detectors at 150 K were characterized by the highest normalized detectivity of approximately 3 × 1011 cm · Hz1/2/W. The obtained results were compared with literature data, showing that the parameters of type II superlattice photodetectors are close to those of HgCdTe photodiodes according to the “Rule 07” and “Rule 22” principles.

Negative Differential Resistance in Single‐Molecule Junctions Based on Heteroepitaxial Spherical Au/Pt Nanogap Electrodes

AbstractSingle‐molecule junctions exploit the internal structure of molecular orbitals to construct a new class of functional quantum devices. The demonstration of negative differential resistance (NDR) in single‐molecule junctions is direct evidence of quantum mechanical tunneling through a molecular orbital. Here, a pronounced NDR effect is reported with a peak‐to‐valley ratio of 30.1 on a single‐molecule junction of π‐conjugated quinoidal‐fused oligosilole derivatives, Si2 × 2, embedded between the unique electroless gold‐plated heteroepitaxial spherical Au/Pt nanogap electrodes. This NDR feature persists in a consecutive endurance test of 180 current traces. the thermally stable NDR effects in the Si2 × 2 single‐molecule junctions between 9 and 300 K are demonstrated. The density functional theory calculations under electric fields indicate that the NDR effect can be ascribed to the bias‐dependent resonant tunneling transport via the polarized HOMO, which has asymmetrically changed electrode coupling with increased bias voltages. The results confirm a promising electrical platform for constructing functional quantum devices at the single‐molecule level.

Control of the preferential orientation and properties of HiPIMS and DCMS deposited chromium coating based on bias voltage

This study investigates the effects of varying bias voltages on the crystallographic orientation and properties of DCMS + HiPIMS-deposited chromium coatings. Under bias voltages varying from 100 to 500 V, dense Cr coatings were obtained, and the deposition rate decreased by 13 %. The bias voltage significantly impacts the hardness, crystallographic orientation, electrical conductivity, and bonding strength of the coating. As the bias voltage increases, the hardness of the Cr coating gradually increases. The crystallographic orientation of the coating is governed collectively by surface energy, strain energy, and sputtering effects. The preferential crystallographic orientation of the Cr coating transitions from (222) to (110), subsequently changing to a mixed preferential crystallographic orientation of (110), (211), and (222). Under the combined influence of thermal effects and ion bombardment, a (110) preferential crystallographic orientation was obtained at a bias voltage of 300 V, featuring moderate hardness and optimal wear resistance. This study establishes that the electrical characteristics of the coatings have a significant correlation with bias voltage levels.

Composite Materials with Nanoscale Multilayer Architecture Based on Cathodic-Arc Evaporated WN/NbN Coatings.

Hard nitride coatings are commonly employed to protect components subjected to friction, whereby such coatings should possess excellent tribomechanical properties in order to endure high stresses and temperatures. In this study, WN/NbN coatings are synthesized by using the cathodic-arc evaporation (CA-PVD) technique at various negative bias voltages in the 50-200 V range. The phase composition, microstructural features, and tribomechanical properties of the multilayers are comprehensively studied. Fabricated coatings have a complex structure of three nanocrystalline phases: β-W2N, δ-NbN, and ε-NbN. They demonstrate a tendency for (111)-oriented grains to overgrow (200)-oriented grains with increasing coating thickness. All of the data show that a decrease in the fraction of ε-NbN phase and formation of the (111)-textured grains positively impact mechanical properties and wear behavior. Investigation of the room-temperature tribological properties reveals that with an increase in bias voltage from -50 to -200 V, the wear mechanisms change as follows: oxidative → fatigue and oxidative → adhesive and oxidative. Furthermore, WN/NbN coatings demonstrate a high hardness of 33.6-36.6 GPa and a low specific wear rate of (1.9-4.1) × 10-6 mm3/Nm. These results indicate that synthesized multilayers hold promise for tribological applications as wear-resistant coatings.

The noise of the charge density waves in quasi-1D NbSe3 nanowires — contributions of electrons and quantum condensate

Low-frequency electronic noise in charge-density-wave van der Waals materials has been an important characteristic, providing information about the material quality, phase transitions, and collective current transport. However, the noise sources and mechanisms have not been completely understood, particularly for the materials with a non-fully gapped Fermi surface where the electrical current includes components from individual electrons and the sliding charge-density wave. We investigated noise in nanowires of quasi-one-dimensional NbSe3, focusing on a temperature range near the Pearls transition TP1 ∼ 145 K. The data analysis allowed us to separate the noise produced by the individual conduction electrons and the quantum condensate of the charge density waves before and after the onset of sliding. The noise as a function of temperature and electric bias reveals several intriguing peaks. We explained the observed features by the depinning threshold field, the creep and sliding of the charge density waves, and the possible existence of the hidden phases. It was found that the charge density wave condensate is particularly noisy at the moment of depinning. The noise of the collective current reduces with the increasing bias voltage in contrast to the noise of the individual electrons. Our results shed light on the behavior of the charge density wave quantum condensate and demonstrate the potential of noise spectroscopy for investigating the properties of low-dimensional quantum materials.

Synthesis of Al quantum dots on porous silicon as an effective radiation detector using extended gate technique

In this study, porous silicon (PS) and aluminum (Al) doped porous silicon were synthesized through an electrochemical method, utilizing carefully selected parameters. The etching procedure was calibrated with a 4:1 HF/ethanol ratio, maintaining a current of 20 mA for 20 min, and incorporating 0.05 g of doping powder. Comprehensive structural analysis using FESEM-EDX revealed the incorporation of Al into the porous silicon matrix. Subsequently, the samples were covered with a finger mask, which facilitated the creation of an interdigitated electrode using a sputtering deposition method. The I–V characteristics of the samples were systematically studied, showing an increase in bias voltage at the source correlated with the measured current. Remarkably, upon X-ray exposure, pulses were successfully measured, highlighting the potential of these materials for radiation detection. These pulses were evaluated under various X-ray irradiation parameters using a sample detector. The study successfully identified the optimal parameters for PS and Al-PS as (90 V, 100 mA, 1 s) and (100 V, 10 mA, 0.5 s), respectively. This research underscores the potential applications of these materials in advanced electronic devices and sensors. The unique properties of synthesized porous silicon, particularly when doped with aluminum, could be beneficial in areas such as photovoltaics, biosensors, and photonics. Additionally, the material's efficiency in detecting X-ray radiation suggests its suitability for medical imaging, security scanning, and radiation monitoring systems. Based on the I–V characteristic studies, these materials may be well-suited for use in electronic components requiring precise control of electrical properties. Overall, this study not only enhances our understanding of porous silicon and aluminum-doped porous silicon but also opens up new avenues for their application in a wide range of sensing technologies.

Dual External Electron Injection Barrier Layers Enable High‐Performance Near‐Infrared Organic Photodetectors Realizing Real‐Time Heart Rate Monitoring

AbstractNear‐infrared organic photodetectors (NIR‐OPDs) play important roles in medical monitoring, bio‐imaging and night vision, etc. Among them, bulk heterojunction (BHJ)‐based photodiode type NIR‐OPDs exhibit extraordinary characteristics in photoresponse and photosensitivity. However, their dark current density (Jd) often increases severely as the bias voltage increases, which seriously reduces detection sensitivity for NIR light. Here, a novel structure of dual external electron injection barrier layers (DEBLs) composed of “m‐MTDATA/DPEPO:HAT‐CN” is proposed to overcome this challenge. For DEBLs, a barrier is established with high injection barrier and long effective injection barrier width to prevent external electrons injection under bias voltage for suppressing Jd (4.22 × 10−8 A cm−2 better than 1.47 × 10−5 A cm−2 of the traditional device at −2 V). More importantly, photo‐generated carriers have almost no loss through DEBLs. Therefore, high and stable detectivity (D*) over 1013 Jones are realized under 850 nm from 0 V to nearly −1 V and even far over 1012 Jones at −2 V. More strikingly, the structure of DEBLs is proven to be effective and universal in NIR‐OPDs and the device based on it successfully realize the real‐time heart rate monitoring of various human states, which exhibits great potential in human health monitoring.

Inward particle transport driven by biased endplate in a cylindrical magnetized plasma

The inward particle transport is associated with the formation of peaked density profiles, which contributes to improve the fusion rate and the realization of steady-state discharge. The active control of inward particle transport is considered as one of the most critical issues of magnetic confinement fusion. Recently, it is realized preliminarily by adding a biased endplate in the Peking University Plasma Test (PPT) device. The results reveal that the inward particle flux increases with the bias voltage of the endplate. It is also found that the profile of radial electric field ( ) shear is flattened by the increased bias voltage. Radial velocity fluctuations affect the inward particle more than density fluctuations, and the frequency of the dominant mode driving inward particle flux increases with the biased voltage applied to the endplate. The experimental results in the PPT device provide a method to actively control the inward particle flux using a biased endplate and enrich the understanding of the relationship between shear and turbulence transport.

Effect of Sputtering Bias Voltage on the Microstructure and Lead-Bismuth Eutectic Corrosion Resistance of the FeCrAlY Coating

FeCrAlY coatings deposited on the outer surface of the cladding tube by the magnetron sputtering with varying bias voltages (0 V to −500 V) were corroded at 550°C to 600°C in oxygen-saturated and oxygen-poor lead-bismuth eutectic for 500 h to 1,000 h. The increased bias voltage led to the Al content decreased and the Y content increased. The coating changed from columnar crystals to equiaxed crystals with increased bias voltage. The decreased bias voltage makes an improved corrosion resistance. The fundamental process governing the evolution of microstructure and corrosion resistance in the FeCrAlY coatings was discussed.

Characterization and antibacterial activity of co-sputtered Cu-doped TiO2 coatings deposited on Ti6Al4V alloy

Copper has gained increased interest because of its important role in metabolism and antimicrobial activity. In this study, composite target material of Ti and Cu was used to deposit TiO2 coatings doped with copper on Ti6Al4V alloy. The aim was to examine the influence of the applied bias during the deposition of Cu-doped TiO2 coating by sputtering in a glow-discharge in a pure O2 atmosphere for a deposition time of 240 min. Different substrate values, selected from 0 to -150 V, were used in the process. The increase in bias voltage from -50 to - 150 V decreased the thickness of the oxide coatings and improved their adhesion to the substrate while increasing the Cu2O phase at the expense of a CuO phase decrease. Simultaneously, the increase in bias voltage decreased Cu content from about 32 wt% for the -50 V biased down to around 11 wt% for the -150 V biased specimens. The antimicrobial efficacy against E. coli estimated by direct contact experiments on the top of the uncoated (control) and coated Ti6Al4V alloy revealed about 94% inhibition for the -50V biased down to around 37% for the -150 V biased coatings as opposed to the control.