In-plane Magnetization Research Articles

Controllable z-Polarized Spin Current in Artificially Structured Ferromagnetic Oxide with Strong Spin-Orbit Coupling.

Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using z-polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering. We fabricate La0.67Sr0.33MnO3-SrIrO3 (LSIMO) thin films with robust spin-orbit coupling and ferromagnetic order through orbital and lattice reconstruction, integrating SrIrO3 and La0.67Sr0.33MnO3 materials. Our investigation reveals that y- and z-polarized spin currents, driven by the spin Hall and spin-orbit precession effects, enable field-free switching of perpendicular magnetization. Notably, the z-polarized spin currents are tunable via the in-plane magnetization of LSIMO. These findings present a promising pathway for the development of energy-efficient spintronic devices, offering improved performance and scalability.

A Quantitative Arrott Analysis Methodology for Magnetic Susceptibility of Microscale Ferromagnetic Nanoflakes.

Probing magnetic susceptibility of a microsized ferromagnet is a long-standing problem in condensed matter physics. Among various measuring methods for magnetic susceptibility including vibrating sample magnetometry and superconducting quantum interference device magnetometry, almost all require large-scale bulk samples or thick films. However, the quantitative measurement for magnetic susceptibility on a microscale nanoflake is a great challenge. Here, we demonstrate a new analysis method to quantitatively evaluate the magnetic susceptibility of a microscale ferromagnetic nanoflake. Based on the Arrott plot of magnetization isotherms obtained from anomalous Hall resistance, we achieve an in situ evaluation of the value of magnetic susceptibility of a microscale ferromagnetic Fe5GeTe2 nanoflake, identification of the out-of-plane and in-plane magnetization, and investigation of the magnetic anisotropy transition with quantifying critical exponents. Our method reveals critical information on magnetic phase transition in microscale ferromagnetic materials, providing deep insight into spin dynamics of correlated electron systems.

Voltage-Controlled Bimeron-Torques Switching of In-Plane Magnetization.

Controlling the out-of-plane magnetization in nanodevices via electric currents has played a pivotal role in advancing high-impact data storage and nonvolatile logic technologies within spintronic devices. However, the in-plane magnetization materials, which are more accessible than their out-of-plane counterparts, are less favored in terms of switching efficiency and magnetization stability. This is due to their larger switching barriers, resulting in a higher critical switching current in the commonly used spin-transfer torques or spin-orbit torques magnetic random-access memory. Here, we propose the use of voltage-controlled bimeron-torques to switch in-plane magnetization for ultralow energy consumption magnetic random-access memory. In this mechanism, magnetic bimerons act as spin-angular-momentum carriers as well as momentum transfer media rather than that of electrical spin currents in spin-transfer torques or spin-orbit torques. We address the microscopic origin of this mechanism and demonstrate its validity with two examples: Co(MoTe_{2})_{2} and HgInP_{2}O_{6} monolayers, respectively. The mechanism overcomes the restriction of perpendicular magnetization and avoids Joule heating, thereby providing additional pathways for electrical manipulation of magnetic materials.

Complexes of Hexacoordinated Ni(II) Based on Diacetyl <i>bis</i>-hetarylhydrazones: Structures and Magnetic Properties

Mononuclear nickel complexes [NiL1(NCS)2] ⋅ 2DMSO (I), [NiL1(NCS)2] ⋅ DMF (II), and [NiL2(NCS)2] ⋅ 0,5CH3OH ⋅ 1,5H2O (III) with the distorted octahedral coordination node, where L1 and L2 are the tetradentate ligand systems derived from the products of the condensation of diacetyl with 2-hydrazinoquinoline and 2-hydrazino-4,6-dimethylpyrimidine, respectively, are synthesized. The structures of the compounds are determined by IR pectroscopy and XRD (CIF files ССDС nos. 2219793 (I), 2142035 (II), and 2219794 (III)). The quantum chemical modeling of the axial parameter of magnetic anisotropy in the zero field (D) is performed for the synthesized compounds in the framework of the SA-CASSCF+NEVPT2 method. The complexes are shown to be characterized by three-axis magnetic anisotropy close to the light magnetization plane with positive D. The axial parameter of magnetic anisotropy (Dexp = 8.79 cm–1) determined by the approximation of the magnetometry data on complex [NiL2(NCS)2] ⋅ 0,5CH3OH ⋅ 1,5H2O is consistent with the calculated value (Dcalc = 11.5 cm–1).

Novel B6P6X (X=As, Sb) monolayers for antiferromagnetic spintronics and hydrogen storage

Embedding foreign atoms into porous two-dimensional (2D) materials has emerged as a promising strategy to tailor their electronic, magnetic, and adsorption properties, enabling promising applications in energy storage and spintronics devices. In this work, spin-polarized density functional theory (DFT) calculations were employed to investigate the ground state properties and hydrogen (H2) storage of interstitially X = As and Sb atom doped B6P6 (B6P6X) graphenylene monolayers. The resulting B6P6X (X = As, Sb) monolayers exhibit very good mechanical, dynamical, and thermal stabilities with antiferromagnetic (AFM) ground states. Electronic structure calculations reveal AFM semiconducting behavior for both monolayers, with indirect/direct band gaps of 0.71/0.60 eV (PBE) and 2.19/2.14 eV (HSE06) for B6P6As/B6P6Sb, respectively. All B6P6X monolayers exhibit an in-plane easy magnetization axis. The obtained Berezinskii–Kosterlitz–Thouless transition (BKT) temperature value of B6P6Sb monolayer is 268.74 K. Furthermore, the H2 storage capabilities of these B6P6X monolayers were examined. We find that B6P6As and B6P6Sb monolayers can each adsorb up to 48H2 molecules with an average adsorption energy (Ea) of -0.14 eV/H2. The corresponding H2 storage gravimetric capacities are 6.91 wt% for B6P6As@48H2 and 6.10 wt% for B6P6As@48H2, surpassing the U.S. Department of Energy’s 2025 target of 5.50 wt%. These findings highlighting the potential of B6P6X (X = As, Sb) monolayers for AFM spintronics and H2 storage applications.

Valley-Polarized Topological Phases with In-Plane Magnetization.

The coexistence of valley polarization and topology has considerably facilitated the applications of 2D materials toward valleytronics device technology. However, isolated and distinct valleys are required to observe the valley-related quantum phenomenon. Herein, we report a new mechanism to generate in-plane magnetization direction-dependent isolated valley carriers by preserving or breaking the mirror symmetry in a 2D system. First-principle calculations are carried out on a prototype material, W2MnC2O2 MXene, to demonstrate the mechanism. A valley-coupled topological phase transition among Weyl semimetal, valley-polarized quantum anomalous Hall insulator, and topological semimetal is observed by manipulating the in-plane magnetization directions in W2MnC2O2. Monte Carlo simulations of W2MnC2O2 show that the estimated Curie temperature is around 170 K, indicating the possibility of observing valley-polarized topological states at higher temperatures. Our finding provides a generalized platform for investigating the valley and topological physics, which is extremely important for future quantum information processing applications.

Thermally Driven Spin Transport of Epitaxial FeRh Films with a Non-magnetic Pt Layer via the Longitudinal Spin Seebeck Effect.

FeRh has been demonstrated to be an important material for the observation of magnetic phase transitions, such as the first-order transition from an antiferromagnetic (AFM) to a ferromagnetic (FM) state, in response to changes in the temperature. This is because of the magnetic moment induced in Rh atoms above the magnetic phase transition temperature. In the present study, we focus on the longitudinal spin Seebeck effect (LSSE), which involves the generation of spin voltage as a result of a temperature gradient in FM materials or FM insulators, and experimentally assess the effect of the crystalline quality of FeRh films and the properties of the substrate on the LSSE thermopower during the FM-AFM phase transition. The measured LSSE thermopower of an epitaxial (110)-oriented FeRh film grown on an Al2O3 substrate is approximately 60 times higher than that of a polycrystalline FeRh film on a SiO2/Si substrate. This can be explained by the high magnetic sensitivity and superior FM properties of (110)-oriented epitaxial FeRh films. Furthermore, by comparing the transverse thermoelectric voltage for in-plane magnetized (IM) and perpendicularly magnetized (PM) configurations, we quantitively evaluate the contribution of the exclusive anomalous Nernst effect (ANE) to the LSSE signals in the FeRh/Al2O3 structure, finding it to be approximately 15-30% over a temperature range of 75-300 K. LSSE measurements in Pt/FeRh films are thus demonstrated to provide a versatile pathway for the development of thermoelectric power generation applications and other practical spintronics and neuromorphic computing devices.

Abnormal Magnetic Phase Transition in Mixed-Phase (110)-Oriented FeRh Films on Al2O3 Substrates via the Anomalous Nernst Effect.

Iron rhodium (FeRh) undergoes a first-orderanti-ferromagnetic to ferromagnetic phase transition above its Curie temperature. By measuring the anomalous Nernst effect (ANE) in (110)-oriented FeRh films on Al2O3 substrates, the ANE thermopower over a temperature range of 100-350 K is observed, with similar magnetic transport behaviors observed for in-plane magnetization (IM) and out-of-plane magnetization (PM) configurations. The temperature-dependent magnetization-magnetic field strength (M-H) curves revealed that the ANE voltage is proportional to the magnetization of the material, but additional features magnetic textures not shown in the M-H curves remained intractable. In particular, a sign reversal occurred for the ANE thermopower signal near zero field in the mixed-magnetic-phase films at low temperatures, which is attributed to the diamagnetic properties of the Al2O3 substrate. Finite element method simulations associated with the Heisenberg spin model and Landau-Lifshitz-Gilbert equation strongly supported the abnormal heat transport behavior from the Al2O3 substrate during the experimentally observed magnetic phase transition for the IM and PM configurations. The results demonstrate that FeRh films on an Al2O3 substrate exhibit unusual behavior compared to other ferromagnetic materials, indicating their potential for use in novel applications associated with practical spintronics device design, neuromorphic computing, and magnetic memory.

On the spontaneous magnetization of two-dimensional ferromagnets.

Ferromagnetism is typically discussed in terms of the exchange interaction and magnetic anisotropies. Yet real samples are inevitably affected by the magnetostatic dipole-dipole interaction. Because of this interaction, a theorem [R.B. Griffiths, Free Energy of interacting magnetic dipoles, Phys. Rev. 176, 655 (1968)] forbids a spontaneous magnetization in, nota bene, three-dimensional bodies. Here we discuss perpendicularly and in-plane magnetized ferromagnetic bodies in the shape of a slab of finite thickness. In perpendicularly magnetized slabs, magnetic domains are energetically favored when the lateral size is sufficiently large, i.e., there is no spontaneous magnetization. For in-plane magnetization, instead, spontaneous magnetization is possible below a critical thickness which, in very thin films, could be as small as few monolayers. At this critical thickness, we predict a genuine phase transition to a multi-domain state. These results have implications for two-dimensional ferromagnetism.

Unusual inverse spin Hall effect in Pt/Co/Pt multilayers on single-crystalline YIG

The inverse spin Hall effect (ISHE) is a significant phenomenon that enables the conversion of spin current into charge current, offering promising applications in novel spintronic devices. In conventional ISHE measurements, it is widely recognized that the spin polarization, spin current, and generated charge current are mutually perpendicular. This study systematically investigates the ISHE in Pt/Co/Pt multilayers grown on a single-crystalline yttrium iron garnet (YIG) layer. A non-zero ISHE voltage was obtained along the direction parallel to the external magnetic field within the YIG coercive field range, deviating from the classical ISHE behavior. Our investigation revealed that the in-plane magnetic anisotropy of single-crystalline YIG plays a crucial role, as the easy axis of YIG and the external magnetic field collaboratively determine the polarization direction of the spin current, especially when the external magnetic field is smaller than the YIG coercive force. Furthermore, by tuning the small in-plane magnetization component of the Pt/Co/Pt multilayers, which couples with the YIG magnetization, we were able to control the shape and reversal path of the ISHE voltage loop. These findings deepen our understanding of how magnetic order affects charge current flow in ISHE measurements. The variety of ISHE voltage loop shapes and reversal paths observed suggest potential applications for this device as a magnetic field sensor.

Intrinsic dipole Hall effect in twisted MoTe2: magnetoelectricity and contact-free signatures of topological transitions

We discover an intrinsic dipole Hall effect in a variety of magnetic insulating states at integer fillings of twisted MoTe2 moiré superlattice, including topologically trivial and nontrivial ferro-, antiferro-, and ferri-magnetic configurations. The dipole Hall current, in linear response to in-plane electric field, generates an in-plane orbital magnetization M∥ along the field, through which an AC field can drive magnetization oscillation up to THz range. Upon the continuous topological phase transitions from trivial to quantum anomalous Hall states in both ferromagnetic and antiferromagnetic configurations, the dipole Hall current and M∥ have an abrupt sign change, enabling contact-free detection of the transitions through the magnetic stray field. In configurations where the linear response is forbidden by symmetry, the dipole Hall current and M∥ appear as a crossed nonlinear response to both in-plane and out-of-plane electric fields. These magnetoelectric phenomena showcase fascinating functionalities of insulators from the interplay between magnetism, topology, and electrical polarization.

Effects of interfacial oxygen diffusion on the magnetic properties and thermal stability of Pd/CoFeB/Pd/Ta heterostructure

We investigated the effects of annealing temperatures (TA) on a Pd (5 nm)/CoFeB (10 nm)/Pd (3 nm)/Ta (10 nm) multilayer structure. The as-deposited sample showed an amorphous state with in-plane uniaxial magnetic anisotropy (UMA), resulting in low coercivity and moderate Gilbert damping constant (α) values. Increasing TA led to crystallization, forming bcc-CoFe (110) crystals, which increased in-plane coercivity and introduced isotropic magnetic anisotropy, slightly reducing the α. The two-fold UMA persists up to 600 °C, and the thermal stability of the in-plane magnetic anisotropy remains intact even TA = 700 °C. The TA significantly influenced the magnetic properties such as in-plane saturation magnetization (Ms//), in-plane and out-of-plane coercivities (Hc// and Hc⊥), and in-plane effective magnetic anisotropy energy density (Keff). Above 600 °C, Keff decreased, indicating a transition towards uniaxial perpendicular magnetic anisotropy. Interfacial oxidation and diffusion from the Ta capping layer to the Pd/CoFeB/Pd interfaces were observed, influencing chemical bonding states. Annealing at 700 °C, reduced oxygen within TaOx through a redox reaction involving Ta crystallization, forming TaB, PdO, and BOx states. Ferromagnetic resonance spectra analysis indicated variations in resonance field (Hr) due to local chemical environments. The α reduction, reaching a minimum at 300 °C annealing, was attributed to reduced structural disorder from inhomogeneities. Tailoring magnetic anisotropy and spin dynamic properties in Pd/CoFeB/Pd/Ta structures through TA-controlled oxygen diffusion/oxidation highlights their potential for SOT, DMI, and magnetic skyrmion-based spintronic devices.

Synthesis and properties of Sr2La2NiW2O12, a new S= 1 triangular lattice magnet.

Magnetic materials featuring triangular arrangements of spins are frequently investigated as platforms hosting magnetic frustration. Hexagonal perovskites with ordered vacancies serve as excellent candidates for two-dimensional triangular magnetism due to the considerable separation of the magnetic planes. In this work, the effects of chemical pressure on the ferromagnetic ground state of Ba2La2NiW2O12 by substitution of Ba2+ with Sr2+ to produce Sr2La2NiW2O12 are investigated. The two materials are characterized using synchrotron-based XRD, XANES and EXAFS in addition to magnetometry in order to correlate their crystal structures and magnetic properties. Both materials form in space group R3, yet as a result of the enhanced bending of key bond angles due to the effects of chemical pressure, the TC value of the magnetic Ni2+ sublattice is reduced from ∼6 K in Ba2La2NiW2O12 to 4 K in Sr2La2NiW2O12.

Eliminating Skyrmion Hall Effect in Ferromagnetic Skyrmions.

Skyrmion Hall effect (SkHE) remains an obstacle for the application of magnetic skyrmions. While methods have been established to cancel or compensate SkHE in artificial antiferromagnets and ferrimagnets, eliminating intrinsic SkHE in ferromagnets is still a big challenge. Here, we propose a strategy to eliminate SkHE by intercalating nonmagnetic elements into van der Waals bilayer ferromagnets featuring in-plane ferromagnetism. The in-plane magnetism, along with a delicate balance among exchange interactions, Dzyaloshinskii-Moriya interactions (DMI), and magnetocrystalline anisotropy, creates interlayer bimerons/quadmerons, whose polarity can be controlled by DMI. Opposite DMI in the upper and lower layers results in opposite polarity and topological charge number Q-locking of topological spin texture, therefore, eliminating the SkHE. By intercalating Sr (Ba) in bilayer VSe2, we identify ten topological magnetic structures with zero topological charge number. Furthermore, we present a phase diagram illustrating diverse magnetic configurations achievable within the bimagnetic atomic layer, offering valuable guidance for future investigations.

Magnetic anisotropy of L1[formula omitted] FeNi (001), (010), and (111) ultrathin films: A first-principles study

In previous experiments, L10 FeNi thin films with different surfaces, including (001), (110), and (111), were produced and studied. Each surface defines a different alignment of the crystallographic tetragonal axis with respect to the film’s plane, resulting in different magnetic anisotropies. In this study, we use density functional theory calculations to examine three series of L10 FeNi films with surfaces (001), (010), and (111), and with thicknesses ranging from 0.5 to 3 nm (from 4 to 16 atomic monolayers). Our results show that films (001) have perpendicular magnetic anisotropy, while (010) favor in-plane magnetization, with a clear preference for the tetragonal axis [001]. We proposed calling this type of in-plane anisotropy fixed in-plane. A film with a surface (111) and a thickness of four atomic monolayers has a magnetization easy axis almost perpendicular to the plane of the film. As the thickness of the (111) film increases, the direction of magnetization rotates towards a tetragonal axis [001], positioned at an angle of about 45° to the plane of the film. Furthermore, the most significant changes in spin and orbital magnetic moments occur at a depth of about three near-surface atomic monolayers. Ultrathin L10 FeNi films with varying magnetic anisotropies may find applications in spintronic devices.

Magnetisation control of the nematicity direction and nodal points in a superconducting doped topological insulator

We study the effects of magnetisation on the properties of the doped topological insulator of the $\text{Bi}_2\text{Se}_3$ family with nematic superconductivity. We found that the direction of the in-plane magnetisation fixes the direction of the nematicity in the system. The chiral state is more favourable than the nematic state for large values of out-of-plane magnetisation. Overall, the critical temperature of the nematic superconductivity is robust against magnetisation. We explore in detail the spectrum of the system with the pinned direction of the nematic order parameter $\Delta_{y}$. Without magnetisation, there is a full gap in the spectrum because of finite hexagonal warping. At an out-of-plane $m_z$ or orthogonal in-plane $m_x$ magnetisation that is strong enough, the spectrum is closed at the nodal points that are split by the magnetisation. Flat Majorana surface states connect such split bulk nodal points. Parallel magnetisation $m_y$ lifts the nodal points and opens a full gap in the spectrum. We discuss relevant experiments and propose experimental verifications of our theory.

The effect of Ar+ and N+ ion irradiation on the thermally induced evolution of the structural and magnetic properties of Co/Pt and Pt/Co bilayered stacks

The application of Co–Pt thin films as functional elements of novel nanoelectronics and spintronics devices requires the formation of a homogeneous ferromagnetic CoPt phase with tunable magnetic properties. A diffusion-controlled synthesis of this ferromagnetic phase can be implemented through the annealing of deposited Co/Pt bilayers. Apart from thermal treatment, both structural and magnetic properties of such layered stacks can be affected by ion preirradiation. In this work, we, therefore, studied the effect of a two-stage process consisting of preirradiation with 110 keV Ar+/N+ ions followed by post-annealing in vacuum at 550°С for 30 min on the evolution of the structural, chemical, and magnetic properties of Co/Pt/substrate and Pt/Co/substrate heterostructures. The results obtained for such two-stage processing were compared to those received after single-stage vacuum annealing. It was found that when ion preirradiation is followed by annealing, the diffusion-driven intermixing of Pt and Co leading to the formation of the ferromagnetic Co–Pt phase is slowed down compared to the non-irradiated samples, which is associated with the barrier effect of implanted projectiles. Furthermore, we demonstrate that preirradiation does not compromise the magnetic properties of the samples. For instance, preirradiation leads to a coercivity increase of up to 38 % compared to the non-irradiated annealed samples which is attributed to the presence of remaining paramagnetic Pt between the grains of the ferromagnetic A1-CoPt phase. We demonstrate that the applied two-stage processing (consisting of ion preirradiation followed by thermal annealing) of magnetic thin films is a promising approach for tailoring their magnetic properties such as the in-plane coercivity, saturation, and effective magnetization.

Ni thin-films on Pd surfaces and effects of oxygen adsorption: Ab-initio study of structures, electronic properties, magnetic anisotropy

We report first-principles electronic structure calculations of the structural, electronic, and magnetic properties of model epitaxial layers consisting of nickel (Ni) atomic layers deposited on palladium (Pd) substrate, i.e., Ni(001)m∣Pd(001)n where m=1,2,6 and n=3,10, are layer thicknesses. We also investigate the effect of oxygen adsorption on the calculated properties. We found variation in magnetization of between ≈0.6μB to 1.00 μB across the nickel layers. Also, finite magnetic moments albeit of small values of between 0.2 μB and 0.3 μB is found on the Pd at the interface. This magnetic moment on an otherwise non-magnetic Pd atoms has been adduced to interfacial strain due to lattice mismatch between the Ni and Pd layers at the Ni|Pd interface. The effect of adsorbed oxygen on the Nim∣Pdn is that it increases the magnetic moment on the nickel layers. Also, regarding the magnitude of magnetic anisotropy energy (MAE), we found a high perpendicular values of 1.63 meV and 1.37 meV per unit cell respectively for Nim∣Pd10 (m=2,6) which are relatively higher than those reported for other transition metal epitaxial layers. However, the presence of oxygen atom on the Ni∣Pd changes the direction and magnitude of MAE. Indeed, O adsorption favours or enhances in-plane magnetization direction depending on the thickness of the Ni layers for a fixed Pd thickness. Plots of local density of states (LDOS) which include the effect of spin–orbit coupling (SOC), show that in the case of Ni∣Pd having perpendicular MAE, there appears a new SOC-induced electronic states below and above the Fermi level. These states appears to stabilize this type of magnetic anisotropy. On the other hand, in-plane MAE is characterized by SOC-induced localized states below the Fermi level (EF) as well as the lowering of the DOS at the EF. Our work explores the physical, magnetic and electronic properties that may be useful in designing Ni∣Pd-based superlattices for magnetic or spintronic applications.

First climatology of F-region UHF echoes observed by the AMISR-14 system at the Jicamarca radio observatory and comparison with the climatology of VHF echoes observed by the collocated JULIA radar

Coherent backscatter radar observations made at the Jicamarca Radio Observatory (JRO) have contributed significantly to our understanding of equatorial F-region irregularities. Radar observations, however, have been made predominantly at the Very-High Frequency (VHF) band (50 MHz), which corresponds to measurements of 3-m field-aligned irregularities. The deployment of the 14-panel version of the Advanced Modular Incoherent Scatter Radar (AMISR-14) at Jicamarca provided an opportunity for observations of Ultra-High Frequency (UHF - 445 MHz) echoes which correspond to measurements of irregularities with 0.34 m scale sizes. Here, we present what we believe to be the first report describing the quiet-time climatology of sub-meter equatorial F-region irregularities derived from UHF radar measurements. The measurements were made between August 2021 and February 2023 using a 10-beam AMISR-14 mode that scanned the F-region in the magnetic equatorial plane. The results show how F-region sub-meter irregularities respond to variations in season and solar flux conditions. The results also confirm, experimentally, that the occurrence of UHF F-region echoes is controlled by the occurrence of equatorial spread F (ESF). Higher occurrence rates were observed during pre-midnight hours and during Equinox and December solstice. Reduced occurrence rates were observed during June solstice. The results show that an increase in solar flux was followed by an increase in the altitude where noticeable occurrence rates (≳ 10%) start and in the maximum altitude of these occurrence rates. The observations also show that occurrence rates lasted longer (in local time) during low solar flux conditions. Comparisons with collocated VHF radar observations showed that, despite differences in radar parameters, observation days, and the scale size (one order of magnitude) of the scattering irregularities, the two systems show similar climatological variations with only minor differences in the absolute occurrence rates. Finally, the analysis of the occurrence rates for different beams did not show substantial climatological variations over local (within a few 100s of km) zonal distances around JRO. We point out, however, that observations on a single day can show strong local variations in echo detection and intensity within the AMISR-14 field of view due to the intrinsic development and decay of ESF structures.

Stability, electronic and magnetic properties of boronphosphide (BP) graphenylene induced by interstitial atomic doping

In the context of low-dimensional materials, incorporating foreign atoms through doping processes has the potential to modulate the properties of host materials, which is favorable for diverse functional applications. In this study, we introduce a series of six distinct B6P6X ternary graphenylene monolayers. The B6P6X is designed through interstitial X = Cl, Br, I, O, S, and Te atomic doping of pure BP graphenylene. Through spin-polarized density functional theory (DFT), we comprehensively investigate the stability, electronic, and magnetic properties of B6P6X monolayers. We demonstrate that B6P6X monolayers are mechanically, dynamically and thermally stable with ferromagnetic ground state properties. We show that the metallic features of B6P6X (X = Cl, Br, I, O, S) and half-metallic property of B6P6Te monolayers at the PBE level can be further modulated when subjected to the HSE06 level. It is revealed that the B6P6X (X = O, S) monolayers exhibit a sizeable magnetic moment and a large magnetic anisotropy energy (MAE) value with an easy out-of-plane magnetization axis. We also found an out-of-plane MAE magnetization axis for B6P6X (X = Br, I) monolayers and an in-plane easy magnetization axis for B6P6X (X = Cl, Te) monolayers. Further investigation show that the B6P6S monolayer exhibit above room-temperature TC up to 565 K. The estimated Berezinskii–Kosterlitz–Thouless transition (BKT) temperature value of B6P6Te monolayer is 254 K. Our findings show that the B6P6X monolayers, particularly doped with chalcogens are potential candidates for nanoscale electronics and spintronics applications.