Novel B6P6X (X=As, Sb) monolayers for antiferromagnetic spintronics and hydrogen storage

Abstract

Embedding foreign atoms into porous two-dimensional (2D) materials has emerged as a promising strategy to tailor their electronic, magnetic, and adsorption properties, enabling promising applications in energy storage and spintronics devices. In this work, spin-polarized density functional theory (DFT) calculations were employed to investigate the ground state properties and hydrogen (H2) storage of interstitially X = As and Sb atom doped B6P6 (B6P6X) graphenylene monolayers. The resulting B6P6X (X = As, Sb) monolayers exhibit very good mechanical, dynamical, and thermal stabilities with antiferromagnetic (AFM) ground states. Electronic structure calculations reveal AFM semiconducting behavior for both monolayers, with indirect/direct band gaps of 0.71/0.60 eV (PBE) and 2.19/2.14 eV (HSE06) for B6P6As/B6P6Sb, respectively. All B6P6X monolayers exhibit an in-plane easy magnetization axis. The obtained Berezinskii-Kosterlitz–Thouless transition (BKT) temperature value of B6P6Sb monolayer is 268.74 K. Furthermore, the H2 storage capabilities of these B6P6X monolayers were examined. We find that B6P6As and B6P6Sb monolayers can each adsorb up to 48H2 molecules with an average adsorption energy (Ea) of -0.14 eV/H2. The corresponding H2 storage gravimetric capacities are 6.91 wt% for B6P6As@48H2 and 6.10 wt% for B6P6As@48H2, surpassing the U.S. Department of Energy’s 2025 target of 5.50 wt%. These findings highlighting the potential of B6P6X (X = As, Sb) monolayers for AFM spintronics and H2 storage applications.