Implantation Energy Research Articles

Efficient Blood-toleration Enzymatic Biofuel Cell via In Situ Protection of an Enzyme Catalyst.

The enzymatic biofuel cell (EBFC) has been considered as a promising implantable energy generator because it can extract energy from a living body without any harm to the host. However, an unprotected enzyme will be destabilized and even eventually be deactivated in human blood. Thus, the performance of implantable EBFC has received barely any improvement. It is therefore a breakthrough in realizing a superior efficient EBFC that can work stably in human blood which relies in protecting the enzyme to defend it from the attack of biological molecules in human blood. Herein, we innovatively created a single-walled carbon nanotube (SWCNT) and cascaded enzyme-glucose oxidase (GOx)/horseradish peroxidase (HRP) coembedded hydrophilic MAF-7 biocatalyst (SWCNT-MAF-7-GOx/HRP). The SWCNT-MAF-7-GOx/HRP is highly stable in electrocatalytic activity even when it is exposed to high temperature and some molecular inhibitors. In addition, we were pleasantly surprised to find that the electrocatalytic activity of GOx/HRP in hydrophilic SWCNT-MAF-7 far surpasses that of the GOx/HRP in hydrophobic SWCNT-ZIF-8. In human whole blood, the SWCNT-MAF-7-GOx/HRP catalytic EBFC exhibits an eightfold increase in power density (119 μW cm-2 vs 14 μW cm-2) and 13-fold increase in stability in comparison with the EBFC based on an unprotected enzyme. In this study, the application of metal-organic framework-based encapsulation techniques in the field of biofuel cells is successfully realized, breaking a new path for creating implantable bioelectrical-generating devices.

Self-Powered Implantable Medical Devices: Photovoltaic Energy Harvesting Review.

Implantable technologies are becoming more widespread for biomedical applications that include physical identification, health diagnosis, monitoring, recording, and treatment of human physiological traits. However, energy harvesting and power generation beneath the human tissue are still a major challenge. In this regard, self-powered implantable devices that scavenge energy from the human body are attractive for long-term monitoring of human physiological traits. Thanks to advancements in material science and nanotechnology, energy harvesting techniques that rely on piezoelectricity, thermoelectricity, biofuel, and radio frequency power transfer are emerging. However, all these techniques suffer from limitations that include low power output, bulky size, or low efficiency. Photovoltaic (PV) energy conversion is one of the most promising candidates for implantable applications due to their higher-power conversion efficiencies and small footprint. Herein, the latest implantable energy harvesting technologies are surveyed. A comparison between the different state-of-the-art power harvesting methods is also provided. Finally, recommendations are provided regarding the feasibility of PV cells as an in vivo energy harvester, with an emphasis on skin penetration, fabrication, encapsulation, durability, biocompatibility, and power management.

Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO<sub>2</sub>/4H-SiC Interface

In this work, the potential of muon spin rotation (μSR) with low-energy muons (LE-μ) for the investigation of oxidation-induced defects at the SiO2/4H-SiC interface is explored. By using implantation energies for the muons in the keV range and comparing the fractions of muonium in different regions, the depth distribution of defects in the first 200 nm of the target material can be resolved. Defect profiles of interfaces with either deposited or thermally grown SiO2 layers on 4H-SiC are compared. The results show an increased number of defects in the case of a thermal oxide, both on the oxide and on the SiC side of the interface, with a spatial extension of a few tens of nm.

Pulse Width and Implantable Pulse Generator Longevity in Pallidal Deep Brain Stimulation for Dystonia: A Population-Based Comparative Effectiveness Study

Introduction: A wide range of pulse widths (PWs) has been used in globus pallidus internus (GPi) deep brain stimulation (DBS) for dystonia. However, no specific PW has demonstrated clinical superiority, and the paradigm may differ among DBS centers. Objective: To investigate how different paradigms of PWs in GPi DBS for dystonia affect implantable pulse generator (IPG) longevities and energy consumption. Methods: Thirty-nine patients with dystonia treated with bilateral GPi DBS at 2 Swedish DBS centers from 2005 to 2015 were included. Different PW paradigms were used at the 2 centers, 60–90 µs (short PWs) and 450 µs (long PW), respectively. The frequency of IPG replacements, pulse effective voltage (PEV), IPG model, pre-/postoperative imaging, and clinical outcome based on the clinical global impression (CGI) scale were collected from the medical charts and compared between the 2 groups. Results: The average IPG longevity was extended for the short PWs (1,129 ± 50 days) compared to the long PW (925 ± 32 days; χ² = 12.31, p = 0.0005, log-rank test). IPG longevity correlated inversely with PEV (Pearson’s r = –0.667, p < 0.0001). IPG longevities did not differ between Kinetra® and Activa® PC in the short (p = 0.319) or long PW group (p = 0.858). Electrode distances to the central sensorimotor region of the GPi did not differ between the short or long PW groups (p = 0.595). Pre- and postoperative CGI did not differ between groups. Conclusions: Short PWs were associated with decreased energy consumption and increased IPG longevity. These effects were not dependent on the IPG model or the anatomic location of the electrodes. PWs did not correlate with symptom severities or clinical outcomes. The results suggest that the use of short PWs might be more energy efficient and could therefore be preferred initially when programming patients with GPi DBS for dystonia.

SIMULATION STUDY OF THE ION IMPLANTATION ENERGY OF POTASSIUM IN THE ZnO MATRIX

There are many methods used for doping the materials, the ion implantation method is one of those methods. It can be simulated by the TRIM software (Transport and Range of Ions in Mater) developed by Ziegler and al [1]. In this work, using the TRIM software is to study the effect of implantation energy and on distribution of implant ions in the target and to examine the different processes resulting from the interaction between the ions of potassium and the target atoms. Interesting physical effects have been simulated

Микроразмерные источники энергии для имплантируемых и носимых медицинских устройств

Важным направлением в области медицинской техники является создание имплантируемых устройств, поддерживающих функционирование организма. Многие из таких устройств требуют энергоснабжения, причем желательно, чтобы такие источники работали весь период имплантации, даже если речь идет о пожизненной установке импланта. Представлен обзор литературных данных по источникам энергии для питания имплантируемых и носимых медицинских устройств. Приведена сравнительная оценка характеристик биотопливных элементов как наиболее проработанного варианта имплантируемого источника энергии с другими возобновляемыми источниками электрической энергии на основе термо-, пьезо-, электростатических, магнито- и фотопреобразователей. Особое внимание уделено применению имплантируемых устройств, которые могут служить источником энергии для маломощных потребителей – микропомп, кардиостимуляторов, нейроимплантов и т.д.

Emerging Implantable Energy Harvesters and Self-Powered Implantable Medical Electronics.

Implantable energy harvesters (IEHs) are the crucial component for self-powered devices. By harvesting energy from organisms such as heartbeat, respiration, and chemical energy from the redox reaction of glucose, IEHs are utilized as the power source of implantable medical electronics. In this review, we summarize the IEHs and self-powered implantable medical electronics (SIMEs). The typical IEHs are nanogenerators, biofuel cells, electromagnetic generators, and transcutaneous energy harvesting devices that are based on ultrasonic or optical energy. A benefit from these technologies of energy harvesting in vivo, SIMEs emerged, including cardiac pacemakers, nerve/muscle stimulators, and physiological sensors. We provide perspectives on the challenges and potential solutions associated with IEHs and SIMEs. Beyond the energy issue, we highlight the implanted devices that show the therapeutic function in vivo.

Nanoscale lattice strains in self-ion implanted tungsten

Developing a comprehensive understanding of the modification of material properties by neutron irradiation is important for the design of future fission and fusion power reactors. Self-ion implantation is commonly used to mimic neutron irradiation damage, however an interesting question concerns the effect of ion energy on the resulting damage structures. The reduction in the thickness of the implanted layer as the implantation energy is reduced results in the significant quandary: Does one attempt to match the primary knock-on atom energy produced during neutron irradiation or implant at a much higher energy, such that a thicker damage layer is produced? Here we address this question by measuring the full strain tensor for two ion implantation energies, 2 MeV and 20 MeV in self-ion implanted tungsten, a critical material for the first wall and divertor of fusion reactors. A comparison of 2 MeV and 20 MeV implanted samples is shown to result in similar lattice swelling. Multi-reflection Bragg coherent diffractive imaging (MBCDI) shows that implantation induced strain is in fact heterogeneous at the nanoscale, suggesting that there is a non-uniform distribution of defects, an observation that is not fully captured by micro-beam Laue diffraction. At the surface, MBCDI and high-resolution electron back-scattered diffraction (HR-EBSD) strain measurements agree quite well in terms of this clustering/non-uniformity of the strain distribution. However, MBCDI reveals that the heterogeneity at greater depths in the sample is much larger than at the surface. This combination of techniques provides a powerful method for detailed investigation of the microstructural damage caused by ion bombardment, and more generally of strain related phenomena in micro-volumes that are inaccessible via any other technique.

Extracting Power from Biological Sources for Activating Sensors/Biosensors

Implantable devices harvesting energy from biological sources and based on electrochemical transducers are currently receiving high attention. The energy collected from a biological environment can be utilized to activate various microelectronic and biosensor devices. This lecture is an overview of the recent research activity in the area of enzyme-based biofuel cells implanted in biological tissue and operating in vivo. The electrical power extracted from the biological sources presents use for activating microelectronic devices for biomedical and biosensor applications. While some microelectronic devices can work within a fairly broad range of electrical operating conditions, others, such as pacemakers, require precise voltage levels and voltage regulation for correct operation. Thus, certain classes of electronic devices powered by implantable energy sources will require careful attention not only to energy and power considerations, but also to voltage scaling and regulation. This requires appropriate interfacing between the energy harvesting device and the energy consuming microelectronic and biosensor devices. The lecture focuses on the problems in the present technology as well as offers their potential solutions. Lastly, perspectives and future applications of the implanted biofuel cells, particularly for powering biosensors are also discussed. The considered examples include a microelectronic sensor and a wireless signal-transfer system powered by implantable biofuel cell extracting electrical energy from biological sources.

Distribution of shallow NV centers in diamond revealed by photoluminescence spectroscopy and nanomachining

We performed nanomachining combined with photoluminescence spectroscopy to understand the depth distribution of nitrogen-vacancy (NV) centers formed by low energy nitrogen ion irradiation of the diamond surface. NV− and NV0 fluorescence signals collected from the surface progressively machined by a diamond tip in an atomic force microscope (AFM) initially rise to a maximum at 5 nm depth before returning to background levels at 10 nm. This maximum corresponds to the defect depth distribution predicted by a SRIM simulation using a 2.5 keV implantation energy per nitrogen atom. Full extinguishing of implantation produced NV− and NV0 zero phonon line peaks occurred beyond 10 nm machining depth, coinciding with the end of easy surface material removal and onset of significant tip wear. The wear ratio of for NV active, ion irradiated diamond compared to the single-crystal diamond tip was surprisingly found to be 22:1. The reported results constitute the first integrated study of in-situ machining and wear characterization via optical properties of the diamond surface containing shallow formed NV centers. We discuss possible metrology applications for diamond tools used in precision manufacturing.

Nano modified zirconia dental implants: Advances and the frontiers for rapid osseointegration

AbstractNanotechnology has created a revolution in implant dentistry. It is an established technology in the field of titanium implant dentistry and is slowly evolving when it comes to ceramic implants. The aim of this review article was to survey the use of nanotechnology for the purpose of implant surface modification in order to improve the osseointegration process of ceramic implants, but also, the various techniques and methods by which nano features can be applied to zirconia implant surfaces. With the application of this advanced technology, the composition, surface energy, roughness and topography of dental implants can be modified for enhanced and potentially faster osseointegration. Furthermore, nanotechnology implant surface modification can also influence the biological processes that occur at the bone–implant interface. The cellular activity and tissue responses occurring at the bone‐zirconia interface can be enhanced by nanomodifications and result in better treatment outcomes. This review also highlights the ‘state of the art’ of nanomodified zirconia surfaces and the perspectives of introducing new technologies in biomedical implantology.

Ultrasound-Driven Two-Dimensional Ti3C2Tx MXene Hydrogel Generator.

Ultrasound is a source of ambient energy that is rarely exploited. In this work, a tissue-mimicking MXene-hydrogel (M-gel) implantable generator has been designed to convert ultrasound power into electric energy. Unlike the present harvesting methods for implantable ultrasound energy harvesters, our M-gel generator is based on an electroacoustic phenomenon known as the streaming vibration potential. Moreover, the output power of the M-gel generator can be improved by coupling with triboelectrification. We demonstrate the potential of this generator for powering implantable devices through quick charging of electric gadgets, buried beneath a centimeter thick piece of beef. The performance is attractive, especially given the extremely simple structure of the generator, consisting of nothing more than encapsulated M-gel. The generator can harvest energy from various ultrasound sources, from ultrasound tips in the lab to the probes used in hospitals and households for imaging and physiotherapy.

Muon implantation experiments in films: Obtaining depth-resolved information.

Implanted positive muons with low energies (in the range 1-30 keV) are extremely useful local probes in the study of thin films and multi-layer structures. The average muon stopping depth, typically in the order of tens of nanometers, is a function of the muon implantation energy and of the density of the material, but the stopping range extends over a broad region, which is also in the order of tens of nanometers. Therefore, an adequate simulation procedure is required in order to extract the depth dependence of the experimental parameters. Here, we present a method to extract depth-resolved information from the implantation energy dependence of the experimental parameters in a low-energy muon spin spectroscopy experiment. The method and corresponding results are exemplified for a semiconductor film, Cu(In,Ga)Se2, covered with a thin layer of Al2O3, but can be applied to any heterostructure studied with low-energy muons. It is shown that if an effect is present in the experimental data, this method is an important tool to identify its location and depth extent.

Implantation‐based passivating contacts for crystalline silicon front/rear contacted solar cells

AbstractIn this work, we develop SiOx/poly‐Si carrier‐selective contacts grown by low‐pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly‐Si in a wide range (20‐250 nm). Dose and energy of implantation as well as temperature and time of annealing were optimized, achieving implied open‐circuit voltage well above 700 mV for electron‐selective contacts regardless the poly‐Si layer thickness. In case of hole‐selective contacts, the passivation quality decreases by thinning the poly‐Si layer. For both poly‐Si doping types, forming gas annealing helps to augment the passivation quality. The optimized doped poly‐Si layers are then implemented in c‐Si solar cells featuring SiO2/poly‐Si contacts with different polarities on both front and rear sides in a lean manufacturing process free from transparent conductive oxide (TCO). At cell level, open‐circuit voltage degrades when thinner p‐type poly‐Si layer is employed, while a consistent gain in short circuit current is measured when front poly‐Si thickness is thinned down from 250 to 35 nm (up to +4 mA/cm2). We circumvent this limitation by decoupling front and rear layer thickness obtaining, on one hand, reasonably high current (JSC‐EQE = 38.2 mA/cm2) and, on the other hand, relatively high VOC of approximately 690 mV. The best TCO‐free device using Ti‐seeded Cu‐plated front contact exhibits a fill factor of 75.2% and conversion efficiency of 19.6%.

Ion implantation isolation based micro-light-emitting diode device array properties

Compared with conventional light-emitting diode (LED), micro-LED has excellent photo-electric properties such as high current density, light output power density, light response frequency. It has widespread application prospects in the field of light display, optical tweezers, and visible light communication. However, dry etching inevitably leads the sidewall to be damaged, which results in the degradation of device properties. In this letter, a micro-LED array device based on F ions implantation isolation technology is presented to avoid damaging the sidewall. We systemically investigate the influence of fluorine ion implantation energy and light-emitting apertures on the photoelectric properties of the micro-LED array device by testing the current-voltage characteristic and light output power. The investigation results show that comparing with F ion 50 keV single implantation device, the reverse leakage of 50/100 keV double implantation device decreases by 8.4 times and the optical output density increases by 1.3 times. When the light-emitting apertures are different (6, 8, 10 μm respectively), the reverse leakage current remains constant, and the forward operating voltage decreasesfrom 3.3 V to 3.1 V and to 2.9 V with the increase of the aperture. Besides, the available area ratio, i.e. the ratio of actual light-emitting area to device area of single micro-LED with different light-emitting apertures are 85%, 87%, and 92%, respectively. The electrical isolation of the micro-LED array is realized by ion implantation isolation technology, and the micro-LED has some advantages over the conventional mesa etching micro-LED device, such as low reverse leakage current density, high optical output power density, and high effective light-emitting area ratio.

Erbium-ion implantation of single- and nano-crystalline ZnO

This paper reports on the results of Er+ ion implantation into various ZnO structures – standard single crystal c-plane (0001) ZnO, nanostructured thin films and nanorods. Er+ ions were implanted using an ion implantation energy of 400 keV and implantation fluences in the range of 5 × 1014 to 5 × 1015ions/cm2. Er concentration depth profiles and the degree of crystal damage were measured using Rutherford backscattering spectrometry (RBS) and RBS/channelling (RBS/C). Additionally, Raman spectroscopy was used to analyse structural modifications of the prepared samples. The main focus was placed on the luminescence properties of various ZnO structures. The results showed that the characteristic bands of ZnO, i.e. near-band-edge (NBE) luminescence and deep-level emission (DLE) – that can be influenced by the excitation wavelength – appeared in the spectra of single crystals and nanorods. The characteristic luminescence bands of erbium ions in the NIR region appeared in non-annealed ZnO single-crystal samples and nano-crystalline films.

Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers

In this paper, effects of He+ and H+ co-implantation with high implantation energy on surface blisters and craters at different annealing conditions are systematically investigated. Surface morphology as well as defect microstructure are observed and analyzed by various approaches, such as scanning electron microscopy (SEM), optical microscopy (OM), atomic force microscopy (AFM), and Raman spectroscopy. It is found that after 500 °C annealing and above for 1 h, surface blisters and exfoliation are observed for Si and SiO2-on-Si wafers except for the samples implanted with only He+ ions. AFM images reveal that the heights of blisters in Si and SiO2-on-Si wafers are 432 nm and 397 nm respectively and the thickness of transfer layer is at the depth of about 1.4 μm, which is consistent with the projected range of He+ and H+ ions. Raman spectroscopy demonstrates that higher annealing temperature can lead to a stronger intensity of the VH2 peak. Under the same implantation parameters, surface morphology of Si and SiO2-on-Si wafers is different after annealing process. This phenomenon is discussed in detail.

Application of Nuclear Techniques to the Investigation of the Oxidation Behavior of Ion-Implanted Steels

The oxidation behavior of ion-implanted steel samples in air, using Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectroscopy (RBS) techniques. Austenitic stainless steel AISI 321 (Fe/Crl8/Ni8/Mn2/Ti) samples implanted with magnesium-, aluminum- and zirconium-ions (implantation energy 40 keV, dose: 1-1017 to 2-1017 ions/cm2) were oxidized in air in the temperature region 450-650 °C for several periods of time. The above implants were selected on the basis of the affinity to oxygen, as well as their ability to form protective oxides as MgO, AI2O3, Zr02 in order to improve the oxidation resistance of steel. The determination of the oxygen concentration and depth-profiles was performed by means of the 160(d, p)170 nuclear reaction. Rutherford Backscattering Spectroscopy was applied to investigate the near-surface layers and to determine the depth profiles of the implanted ions. The determination of the aluminum concentration and the depth distribution of the Al-ions was performed using the resonance at 992 keV of the 27Al(p, 7)28Si nuclear reaction whereas the concentration and the depth distribution of the Mg-ions by the means of the 24Mg(o;, p)27Al reaction. The excitation function of the 24Mg(a:, p)27Al nuclear reaction was studied in the energy region 4600-5000 keV and absolute cross section data allowing the determination of the Mg-profile were determined for this purpose.

Modification of polyethylene’s surface properties by high fluence Fe implantation

In the presented paper, changes of high-density polyethylene’s (HDPE) surface properties along with the changes of chemical composition, as a consequence of Fe ion implantation with different fluences, were investigated. Applied implantation fluences were as follows: 5 × 1016, 1 × 1017, 2 × 1017 and 5 × 1017 ions cm−2, while the implantation energy was 95 keV. The samples were analyzed by X-ray photoelectron spectroscopy (XPS), Atomic Force Microscopy (AFM), Four point contact probe, Fourier transform infrared spectroscopy (FTIR) and contact angle measurements. Significant changes in the chemical composition were found by XPS and FTIR, which were followed by changes in surface morphology, increase of roughness, and decrease of sheet resistance that has a percolation threshold that starts for the fluence of 1 × 1017 ions cm−2. Surface free energy increases as a consequence of implantation, up to the fluence of 1 × 1017 ions cm−2, and then decreases for the 2 higher fluences.

Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs

Detailed investigations on the pre-oxidation nitrogen implantation and post-oxidation annealing processes for the improvement of channel mobility and specific on-resistance in 4H-SiC MOSFETs are reported. The results indicate that higher temperature and time for NO nitridation annealing process lead to higher field-effect channel mobility and lower specific on-resistance attributed to the good interface properties of SiC and SiO2 of MOSFETs. Furthermore, more nitrogen implantation energy and dose improved the channel mobility and specific on-resistance due to higher Id and less fixed charge, traps, and defects at the SiO2/SiC interface. The threshold voltages and blocking performance of MOSFETs are influenced by pre-oxidation nitrogen implantation conditions attributed to changing of counter doping mechanism in the DMOSFET p-well.