Abstract
In this paper, effects of He+ and H+ co-implantation with high implantation energy on surface blisters and craters at different annealing conditions are systematically investigated. Surface morphology as well as defect microstructure are observed and analyzed by various approaches, such as scanning electron microscopy (SEM), optical microscopy (OM), atomic force microscopy (AFM), and Raman spectroscopy. It is found that after 500 °C annealing and above for 1 h, surface blisters and exfoliation are observed for Si and SiO2-on-Si wafers except for the samples implanted with only He+ ions. AFM images reveal that the heights of blisters in Si and SiO2-on-Si wafers are 432 nm and 397 nm respectively and the thickness of transfer layer is at the depth of about 1.4 μm, which is consistent with the projected range of He+ and H+ ions. Raman spectroscopy demonstrates that higher annealing temperature can lead to a stronger intensity of the VH2 peak. Under the same implantation parameters, surface morphology of Si and SiO2-on-Si wafers is different after annealing process. This phenomenon is discussed in detail.
Highlights
Implantation of light ions such as hydrogen and helium into semiconductors contributes to the blisters of free surface and defect microstructures of materials
It was found that no surface changes occurred on sample A even after 1000◦ C annealing for 1 h
The size became larger and larger as the temperature increased, indicating that the evolution of surface morphology closely depends on the annealing temperature
Summary
Implantation of light ions such as hydrogen and helium into semiconductors contributes to the blisters of free surface and defect microstructures of materials. Many studies have provided evidence for the fact that after implantation and followed annealing, vacancies and hydrogen atoms in silicon can precipitate into nanoscale or microscale platelets and grow up at length according to Ostwald ripening theory [4,5]. During the annealing, these platelets eventually evolve into micro-cracks by mechanical coalescence [6,7]. These blisters give rise to the exfoliation of the surface
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