Ideal Band Gap Research Articles

Constructing a tandem heterojunction: S-scheme heterojunction and Ohmic junction based on graphdiyne, synergistically optimizing photocatalytic hydrogen evolution

The construction of heterojunctions is often considered an effective strategy for achieving solar driven photocatalytic decomposition of water. Graphdiyne has unique properties such as highly π conjugated structure, ideal direct bandgap, and high charge carrier mobility, making it a candidate for ideal photocatalysts. In this work, a graphdiyne based composite catalyst GDY-Cu with ohmic contact interface was prepared through organic synthesis. Subsequently, a S-scheme heterojunction was constructed between the contact interface of WO3 nanorods with surface defects and GDY-Cu samples to promote electron transfer. The hydrogen evolution ability of GDY-Cu/WO3 samples with different ratios was studied by adjusting the addition amount of GDY-Cu. In addition, GDY-Cu/WO3 samples exhibits the highest photocatalytic hydrogen evolution activity, reaching 12.2 times that of pure GDY. In fact, the joint construction of Ohmic junctions and S-scheme heterojunctions provides a unique transport pathway for electron transfer. The built-in electric field between interfaces provides power for electron migration. Importantly, in-depth research on in-situ XPS and density functional theory calculations has confirmed the charge transfer pathway. Thorough charge dynamics analysis of the migration ability of photo generated charge carriers. This work not only enriches the photocatalytic system by integrating Ohmic junctions and S-scheme heterojunctions, but also provides a new design strategy for constructing graphdiyne based materials.

Introducing thiazole units into small-molecule acceptors for efficient non-fullerene organic solar cells

The end-group modification engineering has been widely applied in non-fullerene acceptors (NFAs) to achieve high-performance organic solar cells (OSCs). Herein, we designed and synthesized a series of small-molecule acceptors (SMAs), namely ODTz-γ, ODTz-m, DTTz-γ and DTTz-m, which containing the electron-withdrawing thiazole units on the end groups at different position. These SMAs not only exhibited strong and broad absorption region from 500 nm to 900 nm, identical band gaps, but also the similar energy levels, indicating the position of thiazole units have trivial effect on their absorbance and energy levels. OSCs were fabricated by integrating an electron-donating polymer PBDB-T with these resultant electron-accepting materials. Devices based on ODTz-γexhibited an obviously higher power conversion efficiency over 12.0%, which outperformed those of obtained from devices based on other SMAs. Further characterization of the devices revealed that introducing the thiazole units into the γ position of end groups can enhance the charge transport mobility, suppress recombination, and improve the blend film morphology.

Thermophotonic cells in self-sustaining parallel circuits

Thermophotonic (TPX) cells, which integrate a light-emitting diode (LED) and a photovoltaic (PV) cell, offer potential advantages over thermophotovoltaic (TPV) cells for low-grade waste heat utilization. While TPX cells traditionally operate in an independent circuit, which requires an external battery storage unit, the self-sustaining circuit presents an appealing alternative that eliminates the need for the storage unit. In this study, we conduct a comprehensive analysis of TPX cells operating in the self-sustaining circuit. We provide clear expressions for the electrical currents flowing through the LED and PV cell, considering the different bandgaps of the LED and the PV cell. Our results reveal that the bandgap energy of the LED must exceed that of the PV cell for the TPX cell to function in a self-sustaining parallel circuit. Furthermore, we demonstrate that the performance of the TPX cell in the self-sustaining circuit improves with a narrower bandgap energy for the PV cell and a wider bandgap energy for the LED, regardless of the far-field or near-field configurations. While near-field TPX cells exhibit higher power density, they also experience decreased energy efficiency compared to far-field TPX cells. Additionally, we explore the scenario where the bandgaps of the LED and PV cell are the same, analyzing the performance of a closed-structured self-sustaining parallel circuit with multiple LEDs and PV cells in the near-field configuration. We find that the near-field effect has a marginal impact on TPX cells with identical bandgaps, which means that the near-field TPX cell in the self-sustaining circuit will not be useful in practice. The insights gained from this work serve as valuable design guidelines for TPX cells operating in the self-sustaining parallel circuit, enabling practical operation without the need for an external battery storage unit.

Cerium-modified Bi2FeMoO6: Microstructure, dielectric and optical properties

This paper presents an extensive investigation into the synthesis and characterization of Bi2FeMo1-xCexO6 (x = 0.0, 0.06, and 0.1) double perovskite type ceramic materials, fabricated using a high-temperature solid-state reaction method. The article delves into various aspects of these materials, including their structural, microstructural, dielectric, and optical properties. Structurally, the materials exhibit a rhombohedral crystal structure, having average crystallite sizes of 49.5 nm, 21.8 nm, and 26.4 nm for the respective compositions. Scanning electron microscopy reveals a uniform distribution of cylindrical and fractured spherical-shaped grains, complemented by well-defined grain boundaries. Energy dispersive X-ray spectroscopy analysis and elemental color mapping provide concrete evidence regarding the presence of key elements, such as Bi, Fe, Mo, Ce, and O, affirming the formation of highly dense and pure samples. Dielectric properties are comprehensively characterized across a wide temperature range of 25 °C to 500 °C and frequency range of 1 kHz to 1 MHz, highlighting the occurrence of the Maxwell-Wagner polarization effect at lower frequencies. The impedance study underscores the pivotal role of both grains and grain boundaries in determining the conductivity mechanism, with the x = 0.1 composition exhibiting superior semiconducting characteristics. Further examination of the modulus study and AC conductivity supports this finding. Additionally, the calculation of thermal activation energy suggests that the x = 0.1 composition boasts a more favorable thermally activated relaxation mechanism, rendering it a promising candidate for various device applications. Finally, an assessment of the UV–visible spectra reveals that the x = 0.1 composition possesses an ideal bandgap energy range, making it particularly suited for advanced optoelectronic devices.

Resonant perovskite solar cells with extended band edge

Tuning the composition of perovskites to approach the ideal bandgap raises the single-junction Shockley-Queisser efficiency limit of solar cells. The rapid development of narrow-bandgap formamidinium lead triiodide-based perovskites has brought perovskite single-junction solar cell efficiencies up to 26.1%. However, such compositional engineering route has reached the limit of the Goldschmidt tolerance factor. Here, we experimentally demonstrate a resonant perovskite solar cell that produces giant light absorption at the perovskite band edge with tiny absorption coefficients. We design multiple guide-mode resonances by momentum matching of waveguided modes and free-space light via Brillouin-zone folding, thus achieving an 18-nm band edge extension and 1.5 mA/cm2 improvement of the current. The external quantum efficiency spectrum reaches a plateau of above 93% across the spectral range of ~500 to 800 nm. This resonant nanophotonics strategy translates to a maximum EQE-integrated current of 26.0 mA/cm2 which is comparable to that of the champion single-crystal perovskite solar cell with a thickness of ~20 μm. Our findings break the ray-optics limit and open a new door to improve the efficiency of single-junction perovskite solar cells further when compositional engineering or other carrier managements are close to their limits.

Facile Modification on Buried Interface for Highly Efficient and Stable FASn0.5Pb0.5I3 Perovskite Solar Cells with NiOx Hole‐Transport layers†

Comprehensive SummaryFormamidinium (FA)‐based Sn‐Pb perovskite solar cells (FAPb0.5Sn0.5I3 PSCs) with ideal bandgap and impressive thermal stability have caught enormous attention recently. However, it still suffers from the challenge of realizing high efficiency due to the surface imperfections of the transport materials and the energy‐level mismatch between functional contacts. Herein, it is demonstrated that the modification on buried interface with alkali metal salts is a viable strategy to alleviate these issues. We systematically investigate the role of three alkali metal bromide salts (NaBr, KBr, CsBr) by burying them between the NiOx hole transport layer (HTL) and the perovskite light‐absorbing layer, which can effectively passivate interface defects, improve energy‐level matching and release the internal residual strain in perovskite layers. The device with CsBr buffer layer exhibits the best power conversion efficiency (PCE) approaching 20%, which is one of the highest efficiencies for FA‐based Sn‐Pb PSCs employing NiOx HTLs. Impressively, the long‐term storage stability of the unencapsulated device is also greatly boosted. Our work provides an efficient strategy to prepare desired FA‐based ideal‐bandgap Sn‐Pb PSCs which could be applied in tandem solar cells.

Synthesis and characterization of mehtylammonium bismuth iodide via solvent engineering

Hybrid organic–inorganic halide perovskites (OIHPs) are an emerging class of photovoltaic materials that have gained tremendous attention in the field of optoelectronics. This work aims to investigate the characteristics of bismuth-based halide perovskite via solvent engineering for solar cell application. A bismuth-based organo-inorganic perovskite was synthesized and characterized for solar cell application via solvent engineering using Gamma Butyrolactone (GBL) as the based solvent and enhanced with Methylamine (MA) and acetonitrile (ACN). A solution processing facile method was adopted in the synthesis of the perovskite. The solvent engineering aims to tune its band gap and a remarkable band gap of 1.58eV which is within the range of an ideal band gap (1.5-1.6) required for solar cell application. The XRD micrograph exhibited several narrow sharp peaks which indicated crystallinity formation of the synthesized sample with 86% crystallinity. The FESEM/EDS micrograph indicated nature of the formed crystals and the chemical composition of the sample. A multilayer heptagonal crystal was observed. The TGA result showed that the sample is thermally stable at a temperature of 200oC before degradation occurred.

Lattice Strain Regulation Enables High-Performance Formamidinium Perovskite Photovoltaics.

Formamidinium lead iodide (FAPbI3 ) perovskite possesses an ideal optical bandgap and is a potential material for fabricating the most efficient single-junction perovskite solar cells (PSCs). Nevertheless, large formamidinium (FA) cations result in residual lattice strain, which reduces the power conversion efficiency (PCE) and operational stability of PSCs. Herein, the modulation of lattice strain in FAPbI3 crystals via a π-conjugated organic amine, i.e., 4-pyrene oxy butylamine (PYBA), is proposed. PYBA pairs at the grain boundary serve as a template for the crystallization of FAPbI3 perovskite, thereby inducing a highly oriented crystal and a pure α-phase film. The PYBA pairs with strong π-π interactions provide a solid fulcrum for external compression strain, thus compensating for the inherent tension strain of FAPbI3 crystals. The strain release elevates the valence band of the perovskite crystals, thereby decreasing the bandgap and trap density. Consequently, the PYBA-regulated FAPbI3 PSC achieves an excellent PCE of 24.76%. Moreover, the resulting device exhibits improves operational stability and maintains over 80% of its initial PCE after 1500h under maximum power point tracking conditions.

Facile construction of CuO/g-C3N4 heterojunctions with promoted photocatalytic hydrogen generation behaviors

The core issue of photocatalytic H2 generation from water decomposition is to explore high activity, ultra stability and environment-friendly photocatalytic materials. Graphitic carbon nitride (g-C3N4, GCN) is preferred by global scientists for the diversified superiorities, such as the characteristic of flake graphite-phase fabric, competitive cost, non-poisonous, ideal bandgap (∼2.7 eV) and decent stability. Nevertheless, by reason of the deficiencies in small specific surface area and rapid photo-excited charge pairs recombination, photocatalytic hydrogen evolution activity of g-C3N4 is undesirable and it cannot be put into large-scale industrial production for these reasons. Construction of heterojunctions to boost electrons/holes (e-/h+) segregation efficiency is identified as a resultful tactic to promote the activity of g-C3N4. In current work, CuO/g-C3N4 with disparate CuO/g-C3N4 mole ratio (0.5%, 1%, 1.5%, 2%) were prepared through an impregnating strategy and investigated via various methods. Photocatalytic properties of CuO/g-C3N4 (CuO/CN) photocatalysts exert superior H2 evolution rate and consistency under solar light illumination. The optimal H2 evolution activity with non-cocatalyst is 130.1 µmol·g−1·h−1 upon the 1.5% CuO/CN, realizing 46.1 folds as fast as that of GCN (2.8 µmol·g−1·h−1). Coupling with CuO is confirmed to narrow bandgap of the samples, thus enhancing the light absorptivity and utilization. Besides, photo-stimulated e-/h+ pairs have acquired more efficient separation after formation of CuO/g-C3N4 heterojunctions. The method for preparation of S-scheme CuO/g-C3N4 heterojunction catalysts furnishes a perception of boosting the photocatalytic H2 generation rate through coupling with transition metal oxides.

Influence of buffer layer on copper doped tin sulfide solar cell: A Numerical approach

The proposed paper has examined the copper tin sulfide (CTS) semiconductor which is a ternary compound with extremely high absorption coefficient (105 cm−1) and ideal bandgap ranging from 0.9 to 1.6 eV. Non-toxic and widely available elements present on the earth constitute the elements of CTS. In this work, we have numerically simulated the structure: ITO coated polyethylene terephthalate (PET)/ZnO/(CdS, ZnS, CdZnS, TiO2)/CTS/Al using wx-AMPS software.In the structure different layers are: ITO coated PET which is a flexible substrate and acting as a front layer. It has been optimized by optimizing its layer thickness as 140 nm; ZnO as intrinsic layer; CdS/ZnS/CdZnS/TiO2 as buffer layers; CTS as absorber layer and Al as back contact. Different buffer layer variation was studied by varying its thickness and donor concentration. The QE curve shown in the result shows that at lower wavelength also, the QE value for CdZnS and TiO2 is high. Therefore, for furthermore investigation, these two buffer layers were considered. After optimizing the buffer layer, absorber layer optimization was carried out by varying its thickness, acceptor concentration and defect density values. By considering CdZnS as buffer layer, the optimized result which we got as, VOC = 0.819 V, JSC = 25.77 mA/cm2, FF = 85.59 %, η = 18.08 % and by considering TiO2 as buffer layer, the optimized result which we got as, VOC = 0.818 V, JSC = 25.55 mA/cm2, FF = 84.41 %, η = 17.66 %.

Interface Modification for Efficient and Stable Inverted Inorganic Perovskite Solar Cells.

Due to their excellent thermal stability and ideal bandgap, metal halide inorganic perovskite based solar cells (PSCs) with inverted structure are considered as an excellent choice for perovskite/silicon tandem solar cells. However, the power conversion efficiency (PCE) of inverted inorganic PSCs still lags far behind that of conventional n-i-p PSCs due to interfacial energy level mismatch and high nonradiative charge recombination. Herein, the performance of inverted PSCs was significantly improved by interfacial engineering of CsPbI3-x Brx films with 2-mercapto-1-methylimidazole (MMI). It is found that the mercapto group can preferably react with the undercoordinated Pb2+ from perovskite by forming Pb-S bonds, which appreciably reduces the surface trap density. Moreover, MMI modification results in a better energy level alignment with the electron transporting material, promoting carrier transfer and reducing voltage deficit. The above combination results in an open circuit voltage enhancement by 120mV, yielding a champion PCE of 20.6% for 0.09 cm2 area and 17.3% for 1 cm2 area. Furthermore, the ambient, operational and heat stabilities of inorganic PSCs with MMI modification are also greatly improved. Our work demonstrates a simple but effective approach for fabricating highly efficient and stable inverted inorganic PSCs. This article is protected by copyright. All rights reserved.

Stabilization of α‐phase FAPbI3 via Buffering Interfacial Region for Efficient p–i–n Perovskite Solar Cells

AbstractFormamidinium lead triiodide (FAPbI3) with an ideal bandgap and good thermal stability has received wide attention and achieved a record efficiency of 26% in n–i–p (regular) perovskite solar cells (PSCs). However, imperfect FAPbI3 formation on the typical hole transport layer (HTL), high interfacial trap‐state density, and unfavorable energy alignment between the HTL and FAPbI3 result in the inferior photovoltaic performance of p–i–n (inverted) PSCs with FAPbI3 absorber. Herein, the α‐phase FAPbI3 is stabilized by constructing a buffer interface region between the NiOx HTL and FAPbI3, which not only diminishes NiOx/FAPbI3 interfacial reactions and defects but also facilitates carrier transport. Upon the construction of a buffer interface region, FAPbI3 inverted PSC exhibits a high‐power conversion efficiency of 23.56% (certified 22.58%) and excellent stability, retaining 90.7% of its initial efficiency after heating at 80 °C for 1000 h and 84.6% of the initial efficiency after operating at the maximum power point under continuous illumination for 1100 h. Besides, as a light‐emitting diode device, the FAPbI3 inverted PSC can be directly lit with an external quantum efficiency of 1.36%. This study provides a unique and efficient strategy to advance the application of α‐phase FAPbI3 in inverted PSCs.

Alternative lead-free mixed-valence double perovskites for high-efficiency photovoltaic applications

Lead-based organic-inorganic hybrid perovskites have exhibited great potential in photovoltaics, achieving power conversion efficiencies (PCEs) exceeding 25%. However, the toxicity of lead and the instability of these materials under moist conditions pose significant barriers to large-scale production. To overcome these limitations, researchers have proposed mixed-valence double perovskites, where Cs2AuIAuIIII6 is a particularly effective absorber due to its suitable band gap and high absorptance efficiency. To further extend the scope of these lead-free materials, we varied the trivalent gold ion and halogen anion in Cs2AuIAuIIII6, resulting in 18 new structures with unique properties. Further, using first-principles calculations and elimination criteria, we identified four materials with ideal band gaps, small effective carrier mass, and strong anisotropic optical properties. According to theoretical modeling, Cs2AuSbCl6, Cs2AuInCl6, and Cs2AuBiCl6 are potential candidates for solar cell absorbers, with a spectroscopic limited maximum efficiency (SLME) of approximately 30% in a 0.25 μm-thick film. These three compounds have not been previously reported, and therefore, our work provides new insights into potential materials for solar energy conversion. We aim for this theoretical exploration of novel perovskites to guide future experiments and accelerate the development of high-performance photovoltaic devices.

Structural, Electronic, Optical, and Mechanical Properties of Cu(I)Au(III)‐Based Double Perovskites: A First‐Principles Study

Herein, the structural, electronic, optical, and mechanical properties of Cu(I)Au(III)‐based double perovskites using first‐principles calculations are investigated. Phonon calculation results confirm that pure halide Cs2CuAuX6 (X = Cl, Br), mixed‐halide Cs2CuAuBr4Cl2 and Cs2CuAuI4Br2, and strained Cs2CuAuI6 (by 3% strain) are dynamically stable. Subsequently, the optoelectronic and mechanical properties of these compounds are calculated. The calculations reveal that Cs2CuAuX6 exhibits slightly indirect‐bandgap semiconducting behavior, with the bandgaps of 1.169, 1.191, and 1.355 eV from the HSE06 hybrid functional for X = Cl, Br, and I, respectively. Meanwhile, the bandgap of Cs2CuAuI6 decreases with the increase of strain from 1% to 3% (1.271, 1.148, and 1.037 eV, respectively). In addition, the results show that Cs2CuAuI4Br2 (EgHSE06 = 1.278 eV) has a suitable bandgap, which is close to the ideal direct bandgap. Moreover, Cs2CuAuI4Br2 exhibits strong anisotropic visible light absorption with absorption coefficients exceeding 105 cm−1 and has a relatively large dielectric constant (εxxst = εyyst = 36.27) along the ab plane. Furthermore, its Pugh's ratio (Poisson's ratio) value of 2.94(0.35) exceeds the critical value of 1.75(0.26), indicating its ductility and potential for use in flexible electronic devices.

High‐Performance Silver‐Doped Porous CuBi2O4 Photocathode Integrated with NiO Hole‐Selective Layer for Improved Photoelectrochemical Water Splitting

AbstractCuBi2O4(CBO) has received considerable attention owing to its ideal optical bandgap and positive photocurrent onset potential. However, CBO photocathodes exhibit poor charge carrier separation and transfer across the conducting substrate interface. Herein, a systematic incorporation of Ag+‐cations into nanosized porous CBO network (ACBO) using a simple pulsed‐electrodeposition method. In ACBO photocathode, the Ag+‐ions replace the Bi3+‐ions, thereby building an increased hole concentration, which further signifies the photogenerated electron‐hole separation. Additionally, introducing a low‐cost NiO hole‐selective layer between ACBO and the conducting substrate enables a back‐interface‐aided hole‐extraction and electron blocking, resulting in an improved charge transfer across the back interface. Compared with an unmodified CBO, the NiO/ACBO photocathode exhibits a three‐fold enhanced photocurrent performance. This enhances the photocurrent originating from the incorporation of a substantial amount of Ag+‐ions into the CBO structure, leading to an increased acceptor density as well as the formation of an appropriate hole‐selective layer across the back‐contact. The absorption percentage, time‐resolved photoluminescence, and photoelectrochemical impedance spectroscopy measurements unveil the potential light harvesting, charge separation, and transfer characteristics of the NACBO photoelectrode, respectively. Through this systematic study, an efficient and simple strategy is determined for developing ternary metal oxide‐based photocathode/photoanode systems for sustainable energy applications.

62‐3: Infrared Sensitive Thin‐Film Phototransistor Made on Glass Substrate for Active Matrix Sensing Application

In this paper, we propose a novel approach to IR sensing using a narrow band gap semiconductor and the light‐induced barrier lowering (LIBL) mechanism. Lead sulfide quantum dots (PbS QDs) were used as the semiconductor material due to their ideal bandgap energy for IR sensing. The proposed TFT sensor structures with and without a gap between gate and drain were fabricated and demonstrated excellent sensitivity to IR radiation, and therefore providing a cost‐effective and accessible solution for IR sensing, with potential applications in various fields.

Transformations and Environmental Impacts of Copper Zinc Tin Sulfide Nanoparticles and Thin Films.

Quaternary chalcogenide copper zinc tin sulfide (CZTS) nanoparticles are used to make the p-type absorber layer in CZTS solar cells, which are considered more benign alternatives to those based on cadmium telluride (CdTe) and less expensive than copper indium gallium selenide. CZTS has an ideal band gap and a high absorption coefficient for solar radiation, making the nanoparticles an attractive option for photovoltaic cells. In this work, we explore the toxicity of CZTS nanoparticles using an environmentally relevant bacterial model Shewanella oneidensis MR-1. This study also focuses on understanding the stability of CZTS-based thin films and their direct interaction with bacterial cells. Bacterial cell viability, stability of nanoparticles and thin films, as well as mechanisms of toxicity were evaluated using various analytical tools. The CZTS nanoparticle suspensions show significant acute toxic effects on bacterial cells, but long-term (72 h) exposure of bacterial cells to CZTS-based thin films (made from nanoparticles) do not exhibit similar detrimental impacts on bacterial viability. This result is compelling because it suggests that CZTS nanomaterials will have minimal unintended toxicity as long as they are incorporated into a stable film structure.

Prospects for inorganic CsPbI3 perovskite solar cells with commercially viable lifetimes

Perovskite CsPbI3 is a promising photovoltaic absorber material, thanks to its ideal bandgap for Si-tandem solar cell applications and its excellent thermochemical stability compared with hybrid organic–inorganic perovskites. However, CsPbI3 has its own stability challenges as its photoactive β- and γ-polymorphs are thermodynamically unstable at room temperature compared with the yellow non-perovskite δ-phase. Stabilizing CsPbI3 has, thus, been the subject of considerable research in recent years. While some approaches, such as alloying with halides and reducing crystalline domain size, have proven effective in improving phase stability, these benefits have, thus far, come at the expense of photovoltaic efficiency compared with the state-of-the-art CsPbI3 solar cells. In this perspective, we discuss the progress and limitations of inorganic perovskite stabilization techniques and look forward at how to achieve inorganic perovskite solar cells with both commercially viable efficiencies and lifetimes.

Structural, electronic, magnetic, and optical properties of a novel double perovskite Ba2GdRuO6

The highly successful generalized gradient approximations PBE-GGA and GGA+U were employed to study in addition to the crystal structure, the electronic, magnetic, and optical properties of the double perovskite material noted Ba 2 GdRuO 6. For this purpose, the use of first principle calculation, which is considered a significant tool to investigate the properties of this kind of materials, could provide a better understanding of their possible potential applications. The stability of this new material of cubic form is validated by optimizing its structure, and tolerance factor. The electronic structure of Ba 2 GdRuO 6 shows its semiconductor behavior, which provides band gaps energy values of 1.024 eV and 1.316 eV for both GGA and GGA+U approximations, respectively. The antiferromagnetic phase originated from the strong magnetization between the Gd-4f and Ru-4d orbitals producing a magnetic moment equal to 3.99μ B . Furthermore, its optical properties exhibit a high optical conductivity of 105(Ω. cm)−1, an ideal band gap energy, high dielectric constants, and a strong light absorption coefficient in the visible and UV electromagnetic spectrum, making this newly designed material a promising candidate for high optoelectronic performance perovskite solar cells.

Enhanced optical and electrical properties of narrow-bandgap cerium borate glasses and nanostructured glass-ceramics: influence of V2O5-incorporation

Improvement of optical and electrical properties of borate glasses is a great demand for upgrading optoelectronic devices. Additionally, the transformation of borate glasses to nanostructured glass-ceramics endows them with outstanding beneficial properties to widen their application range. Herein, novel borate glass compositions are synthesized by the facile melt quenching method. The influences of V2O5-incorporation and nanocrystallization on the structural, optical, and electrical properties of the investigated cerium borate glasses are studied. The heat-treatment process promotes the precipitation of CeO2 and VCeO4 nanocrystals in the glass network. Linear and high dependence of the band gap of the as-prepared glasses on the V2O5 concentration is observed. A narrow band gap (about 1.6), which lies in the range of ideal bandgaps for two-junction photovoltaic cell applications, is achieved. Strong absorption in the visible and/or UV regions is attained for the studied samples, which is beneficial to shield laser emissions (up to 794 nm) and/or protect against the hazard of UV radiation. High DC conductivity (about 3 × 10−6 S m−1) is approved for the glass sample containing V2O5 content of 10 mol%. The investigated glasses and nanostructured glass-ceramics are recommended as promising candidates for UV-protection Sunglasses, laser safety, visible light irradiation photocatalyst, and next-generation semiconductors.