Abstract
In this paper, we propose a novel approach to IR sensing using a narrow band gap semiconductor and the light‐induced barrier lowering (LIBL) mechanism. Lead sulfide quantum dots (PbS QDs) were used as the semiconductor material due to their ideal bandgap energy for IR sensing. The proposed TFT sensor structures with and without a gap between gate and drain were fabricated and demonstrated excellent sensitivity to IR radiation, and therefore providing a cost‐effective and accessible solution for IR sensing, with potential applications in various fields.
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