The transient effect of nanoparticles is easy to generate transient pulses, which has a great influence on the radiation resistance of integrated circuits. In order to study the conditions of transient effect of nanoparticles, this paper studies the computer simulation of transient pulse characteristics of nanoparticles under high-intensity compression. Combining TCAD simulation with HSPICE simulation test, a new comparative test structure is proposed, which directly quantifies the influence of temperature and voltage on transient pulse by radiation test. The transient current, voltage and TCAD simulation results of nanoparticles, the transient current and voltage of nanoparticles are consistent. When 1.5E = 0.09 s, a transient pulse appears. The peak value of current reaches 0.0010A. When it reaches the highest point, it decreases rapidly. After 1.99E - 0.09 s, it tends to be stable gradually, while the voltage drops to 0V, then increases rapidly, and tends to be stable at 1.99E - 0.09 s. On the pulse width, the HSPICE model simulation results and TCAD simulation which can effectively simulate the transient pulse characteristics of nanoparticles under high-intensity compression, and simulation results show that with the increase of temperature, the transient pulse current and voltage of nanoparticles decrease, when the temperature rises to 480 K, the current and voltage are lower than 180 K.