In this research, using chemical spray pyrolysis technology, Zn1-xCuxS doped (0.0, 0.02, 0.04, 0.06, 0.08 and 0.10 at.%) thin films were grown on a hot glass substrate with a substrate temperature of 275 °C, the thickness is about 110 nm. The spray solutions contain Zn(CH3COO)2•2H2O, SC(NH2)2 and CuCl2•2H2O with molar concentration 0.1 M/L. Energy Dispersion Analysis X-rays (EDAX) sets the initial processing components. The structure of the films was investigated by XRD pattern, and it was found that the films were polycrystalline with a cubic phase for Zn1-xCuxS at (x = 0, 0.02, 0.04 at.%) and mixed cubic and hexagonal phases for (x = 0.06, 0.08 and 0.10 at.%) with a small trace of (CuS). The micro-structural (lattice strain, e, and the crystallite's size, Dv) parameters for the pure and treated films were determined. The transmission spectrum envelope method is used to calculate the film thickness and refractive index. The estimated optical band gap of pure ZnS and ZnS:Cu is a direct transition, and decreases from 3.44 eV to 3.32 eV as the Cu concentration increases. The dielectric constants (ε1 and ε2), dispersion parameters (Eo, Ed), high-frequency dielectric constants, (ε∞), carrier concentration (N/m*) and plasma resonance frequency (ωp) were calculated. According to the changes of the microstructure parameters, the changes of all the optical parameters are discussed for applications in optoelectronics.
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