Hill Coleman Method Research Articles

A high sensitivity temperature coefficient of the Au/n-Si with (CdTe-PVA) structure based on capacitance/conductance-voltage (C/G-V) measurements in a wide range of temperature

This study focused on revealing the temperature-sensing performance and rudimental electrical-properties of the Au/(CdTe-PVA)/n-Si depending on the temperature via impedance-measurements. The temperature-sensitivity (S) for constant-capacitance drive mode shows two-distinct linear-regions corresponding to low/moderate temperatures. The highest S value was achieved as 15.5 mV/K at 0.60 nF value. Nicollian-Brews and Hill-Coleman methods were applied to determine series-resistance (RS) and density of surface-states (NSS) values. The low RS values and the proper magnitude of NSS demonstrate the high quality and performance of the Au/(CdTe-PVA)/n-Si. Additionally, the electrical parameters obtained from C-2-V plots show almost temperature-independent behavior at moderate temperature regions. The low activation-energy values (Ea) determined via Arrhenius-plot indicate hopping of the trapped electron from trap to trap or conduction band dominates the ac conduction. In conclusion, the variations of electrical-parameters and the high S value consolidate the usability of Au/(CdTe-PVA)/n-Si as a thermal sensor in the low-temperature regions.

Analysis of Frequency and Voltage Dependent Electrical Features of Au/Si3N4/p-GaAs (MIS) Device at Room Temperature

The investigation presented here deals with the comprehensive analysis of the C-V-f and G/ω-V-f characteristics of the Au/Si3N4/p-GaAs (MIS) device. These measurements were performed at 300 K and covered a frequency of between 10 kHz–1 MHz. The determination of the Rs was facilitated by the use of the conductance method, while the evaluation of the Nss of the MIS device was performed according to the Hill-Coleman method. A noteworthy observation concerns the significant frequency dispersion observed in the C-V-f and G/ω-V-f features of the MIS devices, particularly noticeable at low frequencies, which is attributable to the influence of Rs and Nss. Furthermore, the determination of the high-frequency Cm and Gm/ω involved measurements under both reverse and forward-biased conditions, followed by careful adjustments to mitigate the effects of Rs. This meticulous procedure culminated in the derivation of the true capacitance values inherent in semiconductor structure.

Investigation of the interface state characteristics of the Al/Al2O3/Ge/p-Si heterostructure over a wide frequency range by capacitance and conductance measurements

In this work, Al/Al2O3/Ge/p-Si heterostructures were fabricated by e-beam thermal evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the basic distribution information in a two-dimensional graph. Three-dimensional atomic Force Microscope (AFM) analysis of the roughness of the Al/Al2O3/Ge/p-Si heterostructure shows that the Al2O3 particle has approximately 4.35 nm. Quantitative analysis via histogram plots for Al2O3 interlayer grown on p-Si shows a Gaussian-like distribution, and it has a sharp profile between 0 and 2 nm on silicon, located around 1.2 nm. The current-voltage (I–V) and capacitance-conductance-voltage (C-G/ω-V) measurements were used to investigate the electrical properties of the structure at room temperature. The I–V measurements revealed two distinct linear regions, attributed to barrier inhomogeneity and distribution of interfacial state/trap densities (Dit). For this reason, we obtained Dit distributions by considering the voltage dependence of the ideality factor n(V) in two regions. Diode parameters acquired through different methods are comparatively presented with a brief literature review. Then, the C-G/ω-V measurements were conducted across a broad frequency range (from 0.3 kHz to 3 MHz), and these measurements revealed notable alterations in the electrical parameters with regard to frequency. In order to probe interface states/traps, we employed the conductance/admittance method, which provided satisfactory information about trap lifetime, following the low-high frequency (LF-HF) and Hill-Coleman methods. The effects of these states/traps on the measurements according to voltage, frequency, and energy level (Eit-Ev) are discussed in detail.

A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

In this study, it was aimed to produce an organic interface layered Schottky diode structure and frequency effect on capacitance-conductance-voltage measurements. In this context, phosphor doped n-type Si single crystal has been used as a semiconductor substrate with a 1-20 Ω.cm resistivity, (100) surface oriention, 2 inches in diameter and 350 μm thickness. The (E)-5,5-difluoro-1,3,7,9-tetramethyl-10-phenyl-2-(2-(pyridin-2-yl)vinyl)-5H-54,64-dipyrrolo [1,2-c:2',1'-f] [1,3,2] diazaborinine (BODIPY-Pyridine) thin film was coated on n-Si using the spin coating technique.
 Ohmic and rectifier contacts were coated by evaporation of indium (In) and gold (Au) using a thermal evaporation system and Au/ BODIPY-Pyridine/n-Si/In Schottky diode was fabricated. Capacitance-voltage (C-V) and conductance-voltage (G-V) measurements of this structure were gained at different frequencies in the dark. Contingent on the frequency, the series resistance (Rs) and the interface state density (Nss) values were identified by using the conductance and Hill-Coleman method, respectively.

Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

Inorganic-organic Schottky contacts based on Gelatin on n-Si wafer have been prepared by a spin coating technique. The reverse and forward bias capacitance-voltage () and conductance-voltage () properties of the Al/Gelatin/n-Si Schottky diode at room temperature in the frequency range from 30 kHz to 1 MHz have been computed by taking into account the series resistance () and interface states () effects. The conductance and Hill-Coleman method were used to determine interfacial layer capacitance (), and The values of and were determined as 810 Ω and 1.52 x−1012 eV−1 cm−2 for 30 kHz and 38 Ω and 3.38 x 1011 eV−1 cm−2 for 1 MHz. Experimental results corroborated that the and are influential parameters which severely impact the basic electrical parameters of Al/Gelatin/n-Si Schottky diode. Both the measured capacitance () and conductance () were corrected in order to obtain the real diode capacitance () and conductance (). Schottky diode parameters such as barrier height (), ionized donor density (), Fermi level (), built-in voltage () were extracted from the frequency-dependent and relations. The values of was determined as 0.796 eV for 30 kHz and 1.090 eV for 1 MHz. The and values were observed to decrease, while the values increase as the frequency increases. Results reveal that the fabricated diode can potentially be used as a promising candidate material for electronics applications.

Investigation on the effect of interface state density and series resistance in Ag/Ge-NW/Si (MS) device synthesized by glancing angle deposition technique

Catalyst-free Ge-nanowire (NW) was synthesized using the glancing angle deposition (GLAD) technique integrated into an electron beam evaporator. The study is mainly focussed on the analysis of frequency and voltage dependence of the capacitance–voltage (C-V) and conductance-voltage (G/ω-V) characteristics of Ag/Ge-NW/Si device over a wide range of frequency (200 kHz−2 MHz) and voltage (−5 V to +5 V) at room temperature. FEG-SEM image confirmed the successful growth of vertically oriented Ge-NW on Si substrate. Both C-V and G/ω -V values showed wide dispersion in the depletion, inversion, and accumulation region due to interface state density (Dit) and series resistance (Rs). The voltage and frequency-dependent Dit and Rs were calculated from the Hill-Coleman and Nicollian-Brews methods, respectively. It is observed that the overall Dit and Rs for the device decrease with an increase in the frequency at different voltages.

Fabrication and characterization of metal insulator semiconductor Ag/PVA/GO/PVA/n-Si/Ag device

In this work, Metal Insulator Semiconductor (MIS) device is fabricated by depositing Graphene Oxide (GO) layer between the top and bottom Polyvinyl Alcohol (PVA) layers to act as an insulating layer. Topographical study of Ag/PVA/GO/PVA/n-Si/Ag device is done by Field Emission-Scanning Electron Microscopy (FE-SEM) technique. The image clearly showed the multilayered sandwiched structure having GO embedded between PVA layers. The comparative study of the effect of interface trap states, series resistance (Rs) and an insulating layer on the different layers of device performance is done using capacitance-conductance characteristics. The presence of peaks in capacitance-conductance curves revealed the presence of interface trap states in the fabricated device. The C–V measurements were taken in the frequency range of 5 kHz to 1 MHz. The interfacial state density (Nss) is found to be of the order of 1011 cm−2 eV−1 which is calculated using Hill-Coleman's method. The increase in leakage current through residual native oxide is verified by calculating the series resistance. The deviation from the ideal behavior of capacitance and conductance characteristics is observed which is attributed to Nss and Rs. The device fabricated unfolded the existence of the capacitance roll-off phenomenon.

Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

p-Type silicon (Si)/intrinsic Si/n-type semiconducting iron disilicide heterostructures were built via facing target direct-current sputtering. To assess the photovoltaic properties, the current density-voltage characteristic curves were recorded in conditions of dark and under irradiation via an Air Mass 1.5 solar simulator (100 mW/cm2). The built heterostructures demonstrated effective rectifying behavior along with a rather substantial leakage current. The open-circuit voltage and the short-circuit photocurrent density values were 178.00 mV and 10.08 mA/cm2, respectively. The assessed energy conversion efficiency was approximately 0.75%. The series resistance (Rs) values at 0 V appraised by the Nicollian-Goetzberger technique were 60.28 Ω at 2 MHz, and 4.13 × 103 Ω at 10 kHz. Their interface state density values evaluated through the Hill-Coleman method were 1.38 × 1012 cm−2/eV at 10 kHz and 1.31 × 1011 cm−2/eV at 2 MHz. The Rs and interface states occurring in the heterostructure interface zone should be the potential determinant of the degeneration of the photovoltaic properties. The characteristics of the real (Z’) and imaginary components of impedance under the changing voltages manifested a shape of one semicircle having a semicircular midpoint beneath the Z’ coordinate. An equivalent circuit model that was related with the heterostructure behavior should be assembled from the parallel association of resistance and constant phase element connected with Rs.

Effects of surface passivation on capacitance-voltage and conductance-voltage characteristics of Al/p-type Si/Al and Al/V2O5/p-type Si/Al diodes

Electrical properties of Al/p-type Si/Al metal-semiconductor and Al/V2O5/p-type Si/Al metal–interfacial layer–semiconductor diodes with and without anodic surface passivation are investigated by the capacitance-voltage (C-V) and conductance-voltage (G/ω−V) characteristics. The measurements were performed at various voltages from −2 V to 2 V in the frequency range from 50 kHz to 1 MHz at room temperature and in the dark. The barrier height, concentration of acceptor atoms, and diffusion potential of these diodes were determined from the linear C−2-V plots. The barrier heights increase for the MS and MIS diodes with anodic surface passivation. Furthermore, the series resistance and interface state density of the diodes were obtained by the Hill-Coleman method and the Nicollian-Goetzberger method, respectively. It is found that the anodic passivation process has a positive effect on these parameters.

Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer

A film of cobalt sulfate (CoSO4)-doped polyvinylpyrrolidone (PVP) blend was spin-coated on n-Si. Electrical measurements were conducted on the Au/n-Si structure with the CoSO4-PVP film sandwiched between them. The frequency dispersion of the main electrical and dielectric parameters and the corresponding mechanisms were evaluated. The extra capacitance originating from the contribution of interface states (Nss) resulted in a fairly large frequency dispersion in C–V plots. These states also influence the carrier transport and conduction mechanism, thus the determination of real Nss values is crucial to evaluate the nonideal behavior of such plots. The values of Nss were calculated using the Hill–Coleman method. The dielectric constant (e′) and dielectric loss (e″) exhibited higher values in the low-frequency region as a result of interface and dipole polarization, while the alternating-current (AC) electrical conductivity (σac) generally decreased. The variation of the loss tangent with increasing frequency of the applied field confirmed the effect of some internal field within the CoSO4-PVP film accompanied by the external AC field.

C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure

In this work, the indium oxide (In2O3)-polyvinylpyrrolidone(PVP) film on the n-Si substrate was coated by a spin coating method. Thus, the Au/(In2O3-PVP)/n-Si metal-polymer-semiconductor (MPS) structure was fabricated. The capacitance/conductance-voltage-frequency (C-V-f and G/ω-V-f) characteristics of the fabricated MPS structure have been analyzed in the frequency range of 10 kHz - 1 MHz. The series resistance (Rs) and interface state density (Nss) value of the MPS structure were determined by using the conductance and Hill-Coleman method, respectively. In addition, other electronic parameters such as the diffusion potential, barrier height, depletion layer width, and surface potential were extracted from the C−2-V characteristics.

Capacitance-voltage profiling of aluminium junctioned PVA/CdSe nanocomposite schottky diode

The present research is focussed on the fabrication and detailed C-V characterisation of Al/ PVA: n- CdSe nanocomposite schottky diode. The prepared PVA: n-CdSe nanocomposite solution was deposited on aluminium substrate using simple technique of Chemical Bath Deposition (CBD). The nanocrystalline nature of the composite PVA-CdSe solution was confirmed by transmission electron microscopy. TEM depicts the shape and size of CdSe nanoparticles. In temperature dependent C-V analysis of Al/ PVA: n-CdSe schottky diode, various parameters like carrier concentration (ND), built in voltage (Vbi), barrier height (Φb), and depletion layer width (W) were computed under reverse bias voltage at various temperatures. Barrier height and Built in voltage was found decrease with annealing temperature whereas Carrier concentration and Depletion width showed an increasing trend. Using frequency dependent C-V and G-V characterisation, the density of interfacial states (NSS) have been determined as a function of applied voltage using Hill-Coleman method. The effectiveness of interfacial states showed a decreasing trend with increasing bias.

Impedance spectroscopy study of electrical properties of polymer blend interlayered Al/PEG-PVA/p-Si (MPS) structure

PEG-PVA polymer blend has been prepared by solution processing and a thin film of the blend has been spin coated as an interfacial layer on a p-Si wafer. Capacitance-voltage (C–V) and conductance-voltage (G/ω-V) characteristics of Al/PEG-PVA/p-Si (metal-polymer-semiconductor) structure were studied in a frequency range of 5 KHz to 1 MHz with voltage bias swept from −4 V to +5 V, by considering interface states density (Dit) and series resistance (Rs) at room temperature. The voltage and frequency dependent profile of Dit were evaluated from the low-high frequency capacitance (CLF-CHF) and Hill-Coleman methods. The Rs profiles for various frequencies and voltages were evaluated using Nicollian-Brews admittance method. Dit and Rs both decrease almost exponentially with increasing frequency. It has been found that Rs is more effective at high frequencies in the accumulation region, while Dit influences the characteristics in the depletion region at low frequencies. Measured capacitance (Cm) and measured conductance (Gm) were improved to corrected capacitance (Cc) and corrected conductance (Gc) to eliminate the effect of Rs at high frequency (1 MHz). Electrical parameters of the fabricated MPS structure and band gap analysis of prepared blend confirms that PEG-PVA blend is a better alternative dielectric material for electronic devices.

On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures

Abstract In order to good interpret the conduction mechanism in the Al/P3HT/p-Si (MPS) structure, both the capacitance-voltage (C-V), and conductance-voltage (G/ω-V) characteristics of the structure are carried out in the wide temperature (120-300 K) and voltage (±5 V by 50 mV steps), respectively. The C-V plot shows a peak behavior in the accumulation region for each temperature due to the presence of Rs and interfacial layer. When the value of C starts to decrease in the accumulation region, G/ω starts to increase due to inductive behavior of the sample. The obtained barrier height from the reverse bias C-2 vs V plot decreases with increasing temperature as linearly and has -3.68x10-4 eV/K negative temperature coefficient which is very closed to temperature coefficient of Si band-gap (-4.73x10-4 eV/K). The value of activation energy (Ea) was obtained from the slope of Arrhenius plot for various bias voltages and it changed from 5.75 eV (for 2 V) and 4.1 eV (for 5 V), respectively. In addition both the temperature dependent profile of Nss and Rs were obtained by using the Hill-Coleman and Nicollian-Brews methods, respectively, and they decrease with increasing temperature due to reordering and restructure of the surface charges under temperature and electric field. In order to see the effect of Rs on the C-V and plot G/ω-V plots, they were corrected. All experimental results were confirmed that the Rs, interfacial polymer layer, Nss and temperature are more effective on the conduction mechanism especially at low temperature

The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures

Abstract Metal-polymer-semiconductor (Al/P3HT/p-Si) structures have been fabricated and their electrical characteristics have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements. These measurements were performed in the frequency and voltage range of 3 kHz-1MHz and ±5 V, respectively, at room temperature. The values of diffusion potential (VD), doping concentration of acceptor atoms (NA), Fermi energy level (EF) and barrier height (ФB) were obtained from the reverse bias C−2 vs V plot for each frequency by considering interface states (Nss), series resistance (Rs), and interfacial layer effects. All these parameters were found as strong functions of frequency and voltage. The values of both Nss and Rs decrease with increasing frequency. On the other hand, the value of Nss is prominent in the inversion and depletion regions at low frequency, but Rs and interfacial layer are prominent in the accumulation region at high frequency. Therefore, to see the effect of Rs both the C-V and G/ω-V plots were corrected for high frequencies. The voltage dependent profile of Nss and Rs were also obtained from Hill-Coleman and Nicollian-Brews method, respectively. Obtained results confirm that the values of Nss, Rs and interfacial layer are more effective on the impedance measurements

Preparation of (CuS–PVA) interlayer and the investigation their structural, morphological and optical properties and frequency dependent electrical characteristics of Au/(CuS–PVA)/n-Si (MPS) structures

Structural, morphological and optical properties of prepared CuS nanostructures were analyzed using XRD, SEM, FTIR, UV–Vis and DRS methods. Experimental results indicated that samples show good crystalline structures. In addition, the particles size and their morphology changed with pH value. UV–Vis absorption shifts to blue by variation of pH and also both the diffuse reflectance and optical absorption of CuS nanostructures have absorption regions of 300–400 nm, respectively. Electrical characteristics of these structures were also investigated in the frequency range of 2 kHz–1 MHz by using impedance–voltage (Z–V) measurements. Experimental results showed that both the value of capacitance (C) and conductance (G/ω) are strong functions of frequency and voltage especially in depletion and accumulation regions due to the effects of surface states (Nss), series resistance (Rs) and interfacial (CuS–PVA) polymer layer. G/ω–V plot revealed a distinctive peak for each frequency in depletion layer and peak positions shift towards to accumulation region with increasing frequency. The voltage dependent profile of the Nss was found from the high–low capacitance (CLF–CHF) and Hill–Coleman methods and obtained values are agreeing with each other. The voltage dependent profile of Rs was also obtained using the Nicollian–Brews method and it decreases with increasing frequency. The obtained mean value of Nss was found at about 2 × 1011 eV−1 cm−2, which is lower and reasonable for an electronic device. Obtained lower values of Nss can be attributed to the passivation effect of the (CuS–PVA) polymer layer.

Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode

Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, $$ T $$ , interval of 160–400 K using current–voltage (I–V), capacitance–voltage ( $$ C {-} V $$ ) and conductance–voltage ( $$ G/\omega {-} V $$ ) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height ( $$ \Phi_{{\rm B}0} $$ ) and ideality factor ( $$ n $$ ) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working $$ T $$ . Experimental results showed that the values of $$ \Phi_{{\rm B}0} $$ were in increasing behavior with increasing $$ T $$ while $$ n $$ values decreased with inverse proportionality in $$ n $$ versus $$ \Phi_{{{\rm{B}}0}} $$ plot. Therefore, the non-ideal I–V behavior with inhomogeneous barrier height (BH) formation has been discussed under the assumption of Gaussian distribution (GD). From the GD of BHs, the mean BH was found to be about 1.40 eV with 0.1697 standard deviation and the modified Richardson constant $$ A^{*} $$ of this diode was obtained as 141.65 A/cm2 K2 in good agreement with the literature (the theoretical value of $$ A^{*} $$ is 137.21 A/cm2 K2). The relationship between $$ \Phi_{{\rm B}0} $$ and $$ n $$ showed an abnormal I–V behavior depending on $$ T $$ , and it was modeled by TE theory with GD of BH due to the effect in inhomogeneous BH at the interface. Secondly, according to Cheung’s model, series resistance, $$ R_{\rm{S}} $$ values were calculated in the $$ T $$ range of 160–400 K and these values were found to decrease with increasing $$ T $$ . Finally, the density of interface states, $$ D_{\rm{it}} $$ was calculated and the $$ T $$ dependence of energy distribution of $$ D_{\rm{it}} $$ profiles determined the forward $$ I {-} V $$ measurements by taking into account the bias dependence of the effective BH, $$ \Phi_{\rm{e}} $$ and $$ n $$ . $$ D_{\rm{it}} $$ were also calculated according to the Hill–Coleman method from $$ C {-} V $$ and $$ G/\omega {-} V $$ analysis. Furthermore, the variation of $$ D_{\rm{it}} $$ as a function of frequency, $$ f $$ and $$ T $$ were determined.

Interface State Density and Series Resistance of n-Type Nanocrystalline FeSi₂/p-Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering.

n-Type nanocrystalline FeSi2/p-type Si heterojunctions were formed by using facing-target direct- current sputtering at room temperature. The J-V characteristic results revealed that the reverse leakage current is large and the response under illumination of near-infrared light is very weak. The capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G-V-f) measurements were carried out at room temperature in order to estimate the series resistance (Rs) by using the Nicollian-Brews method and the density of interface state (Nss) by using the Hill-Coleman method. By estimation according to the Nicollian-Brews method, the Rs value increases with decreasing f value. The Rs values at zero bias voltage were 2.07 Ω at 60 kHz and 1.54 Ω at 2 MHz, which are consistent with those calculated by using the Cheung's and Norde's methods. The obtained Rs should be attributable to the Rs existing in the ohmic contact and neutral regions, which is the current-limiting factor for junctions. The nss values calculated by using the Hill-Coleman method were 2.70 × 1014 eV-1cm-2 at 60 kHz and 1.43 × 1013 eV-1cm-2 at 2 MHz. This result revealed the presence of interface states at the hetero-interface behaving as a leakage current center and a trap center of the photo-generated carrier, which degraded the junction properties at room temperature.

Analysis of current conduction mechanism in CZTSSe/n-Si structure

In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, and electrical properties of deposited films were investigated. Current–voltage (I–V) in the temperature range of 250–350 K, capacitance–voltage(C–V) and conductance–voltage (G/w–V) measurements at room temperature were carried out to determine electrical properties of CZTSSe/n-Si structure. The forward bias I–V analysis based on thermionic emission (TE) showed barrier height inhomogeneity at the interface and thus, the conduction mechanism was modeled under the assumption of Gaussian distribution of barrier height. The mean barrier height $$({\bar {\Phi }_{B0}})$$ and standard deviation $$({\sigma _0})$$ at zero bias were obtained as 1.27 eV and 0.18 V, respectively. Moreover, Richardson constant was obtained as 120.46 A cm−2 K−2 via modified Richardson plot and the density of interface states (Dit) profile was determined using the data obtained from forward bias I–V measurements. In addition, by the results of frequency dependent C–V measurements, characteristics of the interface state density were calculated applying high-low frequency capacitance (CHF − CLF) and Hill–Coleman methods.

Interface defects detection and quantification on a Si/SiO2 structure

PurposeThe purpose of this paper is to investigate and classify the defects on silicon-based power devices under extreme conditions.Design/methodology/approachElectrical characterization was performed on MOS devices to study their interface defects. The devices were subjected to a voltage or a current constraint to induce defects, and then measurements were done to detect the effects of those defects. Measurements include current voltage, capacitance and conductance characterization. The Hill–Coleman method was used to calculate the interface states density in each case.FindingsIt was found that most of the defects have energies within the upper band gap of the semiconductor.Originality valueThe method used in this paper allows the determination of any interface defects on a Si/SiO2 structure.