Abstract
The present research is focussed on the fabrication and detailed C-V characterisation of Al/ PVA: n- CdSe nanocomposite schottky diode. The prepared PVA: n-CdSe nanocomposite solution was deposited on aluminium substrate using simple technique of Chemical Bath Deposition (CBD). The nanocrystalline nature of the composite PVA-CdSe solution was confirmed by transmission electron microscopy. TEM depicts the shape and size of CdSe nanoparticles. In temperature dependent C-V analysis of Al/ PVA: n-CdSe schottky diode, various parameters like carrier concentration (ND), built in voltage (Vbi), barrier height (Φb), and depletion layer width (W) were computed under reverse bias voltage at various temperatures. Barrier height and Built in voltage was found decrease with annealing temperature whereas Carrier concentration and Depletion width showed an increasing trend. Using frequency dependent C-V and G-V characterisation, the density of interfacial states (NSS) have been determined as a function of applied voltage using Hill-Coleman method. The effectiveness of interfacial states showed a decreasing trend with increasing bias.
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