C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure

Abstract

In this work, the indium oxide (In2O3)-polyvinylpyrrolidone(PVP) film on the n-Si substrate was coated by a spin coating method. Thus, the Au/(In2O3-PVP)/n-Si metal-polymer-semiconductor (MPS) structure was fabricated. The capacitance/conductance-voltage-frequency (C-V-f and G/ω-V-f) characteristics of the fabricated MPS structure have been analyzed in the frequency range of 10 kHz - 1 MHz. The series resistance (Rs) and interface state density (Nss) value of the MPS structure were determined by using the conductance and Hill-Coleman method, respectively. In addition, other electronic parameters such as the diffusion potential, barrier height, depletion layer width, and surface potential were extracted from the C−2-V characteristics.