A high sensitivity temperature coefficient of the Au/n-Si with (CdTe-PVA) structure based on capacitance/conductance-voltage (C/G-V) measurements in a wide range of temperature

Abstract

This study focused on revealing the temperature-sensing performance and rudimental electrical-properties of the Au/(CdTe-PVA)/n-Si depending on the temperature via impedance-measurements. The temperature-sensitivity (S) for constant-capacitance drive mode shows two-distinct linear-regions corresponding to low/moderate temperatures. The highest S value was achieved as 15.5 mV/K at 0.60 nF value. Nicollian-Brews and Hill-Coleman methods were applied to determine series-resistance (RS) and density of surface-states (NSS) values. The low RS values and the proper magnitude of NSS demonstrate the high quality and performance of the Au/(CdTe-PVA)/n-Si. Additionally, the electrical parameters obtained from C-2-V plots show almost temperature-independent behavior at moderate temperature regions. The low activation-energy values (Ea) determined via Arrhenius-plot indicate hopping of the trapped electron from trap to trap or conduction band dominates the ac conduction. In conclusion, the variations of electrical-parameters and the high S value consolidate the usability of Au/(CdTe-PVA)/n-Si as a thermal sensor in the low-temperature regions.