High Leakage Research Articles

Engineering room temperature multiferroicity and temperature dependent dielectric properties of Cr doped BaTiO3 ceramics

The coexistence of ferroelectricity, ferromagnetism, and piezoelectricity at room temperature in BaTi1-xCrxO3 (0 ≤ x ≤ 0.06) nanostructures is interesting and leads to the multiferroic nature of system. Sol-gel auto-combustion technique has been used for the synthesis of nanostructures. The XRD patterns along with Rietveld refinement analysis, confirm that the samples possess parent tetragonal perovskite structure in the P4mm space group. The oxygen vacancies stoichiometry ratio was estimated through XPS studies. The scanning electron microscopy (SEM) confirms the large grain size in the doped sample. The study of leakage current density reveals an increase in its value with the increase in Cr content due to defects induced in the system. P-E measurements confirm the ferroelectric nature of the samples that diminishes in the doped samples due to the high leakage current. Moreover, the estimated value of energy efficiency (η) was found to be maximum for the undoped sample. The undoped BaTiO3 has a diamagnetic character that is partially altered into weak ferromagnetic under the Cr-doping at the expense of decreasing polarization parameters. The temperature-dependent dielectric constant shows all characteristics of phase transitions in the samples. The doping of Cr enhances the ferroelectric to paraelectric phase transition temperature (Tc). The piezoelectricity remains preserved in the doped samples. Thus, the coexistence of ferroelectricity, ferromagnetism, and piezoelectricity at room temperature finalizes the multiferroic nature of the synthesized samples.

Inverter design trade-off for photovoltaic power generation

Photovoltaic (PV) power generation is a very important way of energy conversion. It can convert solar energy into electricity. As the core photovoltaic power generation device, the microinverter design has many challenges. Limitations that need to be considered include high-frequency leakage current generated by parasitic capacitance, the front DC voltage gain of the inverter, and switch components’ number and power consumption. In many cases, these limitations are difficult to solve perfectly simultaneously in a standard H-bridge or three-phase inverters. A front boost converter requires a high DC voltage gain with fewer switches, and Z-source or split-source structures can be applied. But these structures can lead to high leakage current. A traditional half-bridge inverter can solve the problem but with low efficiency. H5 or HERIC full-bridge inverter for PV can eliminate leakage current while more switches are used. A dual-boost common-grounded H-bridge topology can remove the leakage current and achieve a high DC voltage gain with only four switches. However, the power consumption of different switches varies greatly, which may cause an imbalance in heating and damage the device.

Effect of the Pulsed Electric Field Treatment on Physical, Chemical and Structural Changes of Vacuum Impregnated Apple Tissue in Aloe Vera Juices

Vacuum impregnation (VI) stands as a diffusion-driven food processing method that has found recent application within the food industry, particularly for the cold formulation of fortified food products. Pulsed electric field (PEF) treatment can affect the food structure, influencing therefore the mass transfer phenomena during the further processing. Thus, the study aimed at investigating the effect of PEF treatment on selected physicochemical properties of vacuum-impregnated apples. Apple slices were vacuum impregnated with aloe vera juice solution with or PEF treatment at different intensities (125, 212.5 or 300 V/cm). The PEF was applied as a pretreatment—applied before the VI process as well as posttreatment—applied after the VI process. The VI process with aloe vera juice resulted in a sample weight increase of over 24% as well as structural changes, partial cell viability loss and color alteration. In addition, the decrease of bioactive compounds was observed, while antioxidant activity remained at a similar level as in raw material. PEF treatment adversely affected vacuum impregnation efficiency, causing microstructural changes and cell viability loss. Additionally, chemical composition modifications were evident through thermogravimetric analysis (TGA) and Fourier Infrared Spectroscopy (FTIR) analyses. Tissue hardness decreased significantly due to structural damage and caused high leakage from plant tissue, which resulted in hindering saturation with aloe vera juice during the VI process. Additionally, reduced bioactive substance content after PEF treatment was observed and the VI process did not restore apple samples of the bioactive compounds from aloe vera juice.

Pseudo‐Vertical Schottky Diode with Ruthenium Contacts on (113) Boron‐Doped Homoepitaxial Diamond Layers

Electrical properties of pseudo‐vertical Schottky barrier diodes (pVSBDs) prepared on (113)–oriented boron‐doped diamond (BDD) layers using ruthenium (Ru) for both the ohmic and Schottky contacts are investigated. First, Ru ohmic contacts are evaporated on homoepitaxial BDD layers with different resistivity, and their specific contact resistance is measured using circular transfer length method structures after annealing at various temperatures up to 750 °C. Then, pVSBD structures are fabricated on the boron‐doped bilayer consisting of a lower, heavily boron‐doped layer ensuring an ohmic contact and an upper, lightly doped layer providing a rectifying Schottky contact. After necessary mesa etching, both contacts are formed by the Ru evaporation. The results show that Ru forms a stable ohmic contact with very low contact resistance (10−5–10−6 Ω cm2) when deposited on BDD layers with metallic conductivity. It also provides an acceptable Schottky contact on low‐doped (113) homoepitaxial BDD. Both contacts, which are made simultaneously, realize pVSBDs with low on‐state resistance and low forward voltage drop. However, the lower barrier of the ruthenium contacts results in higher leakage. Ru pVSBDs thus show a lower rectification ratio, higher leakage, and a worse ideality factor compared to analogical pVSBDs using molybdenum contacts.

Effect Of Graphene Oxide on Poly (Methyl Methacrylate)-Grafted Natural Rubber Polymer Electrolytes

Polymer electrolytes (PE) are presently the subject of the majority of research due to their capacity to replace liquid electrolyte that suffer from high flammability and electrolyte leakage and also as a new forms of electrical power production and storage systems. Solid polymer electrolytes (SPE) typically have low ionic conductivity at room temperature because of the high crystallinity of the polymers. Methyl-grafted natural rubber has been studied extensively by a number of researchers due to its advantageous properties such as high flexibility, and ability to solvate inorganic salts to form a polymer-salt complex. Graphene oxide (GO) was used as a nanofiller, ammonium triflate (NH4CF3SO3) served as a dopant salt, and 30 % polymethyl methacrylate grafted natural rubber (MG30) served as the polymer host in the preparation of the nanocomposite polymer electrolyte (CPE) using the solution casting-method. Electrochemical impedance spectroscopy (EIS) was used to analyse the ionic conductivity of the samples, and Fourier-transform infrared spectroscopy (FTIR) was used to analyse the complexation between salt, polymer host and filler while Optical microscope was used to study the surface morphology of the prepared CPE samples. The decrease in peak strength for C=O in the FTIR spectra indicates the interaction between the polymer host and salt The sample containing 15 weight percent NH4CF3SO3 had the highest conductivity, which was 2.05×10-5 S cm-1. This substance has the potential to be used in energy storage devices like batteries and supercapacitors as an alternative to commercial liquid electrolyte.

High performance platinum contacts on high-flux CdZnTe detectors

The need for direct X-ray detection under high photon flux with moderate or high energies (30–100 keV range) has strongly increased with the rise of the 4th Generation Synchrotron Light Sources, characterised by extremely brilliant beamlines, and of other applications such as spectral computed tomography in medicine and non-destructive tests for industry. The novel Cadmium Zinc Telluride (CZT) developed by Redlen Technologies can be considered the reference material for high-flux applications (HF-CZT). The enhanced charge transport properties of the holes allow the mitigation of the effects of radiation induced polarization phenomena, typically observed in standard CZT materials (LF-CZT) under high photon flux. However, standard LF-CZT electrical contacts led to inacceptable high dark leakage currents on HF-CZT devices. In this work, a detailed study on the characteristics of new optimized sputtered platinum electrical contacts on HF-CZT detectors is reported. The results from electrical and spectroscopic investigations, showed the best performances on HF-CZT detectors with platinum anode, coupled with both platinum or gold cathode. The morphology, structure, and composition of Pt/CZT contact have been analysed by means of Transmission Electron Microscopy (TEM) on microscopic lamellas obtained by Focused Ion Beam (FIB), highlighting the presence of CdTeO3 oxide at the metal semiconductor interface.

Large-Scale β-Ga2O3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage

β-Ga2O3 Schottky barrier diodes (SBDs) suffer from the electric field crowding and barrier height lowering effect, resulting in a low breakdown voltage (BV) and high reverse leakage current. Here, we developed β-Ga2O3 trench MOS-type Schottky barrier diodes (TMSBDs) on β-Ga2O3 single-crystal substrates with halide vapor phase epitaxial layers based on ultraviolet lithography and dry etching. The 1/C2−V plots are deflected at 2.24 V, which is caused by the complete depletion in the mesa region of the TMSBDs. A close-to-unity ideality factor of 1.02 and a low turn-on voltage of 0.72 V are obtained. This is due to the low interface trap density in the metal/semiconductor interface of TMSBDs, as confirmed by the current–voltage (I–V) hysteresis measurements. The specific on-resistance calculated with the actual Schottky contact area increases as the area ratio (AR) increases because of the current spreading phenomenon. Furthermore, the reverse leakage current of the TMSBDs is smaller and the BV is increased by 120 V compared with the regular SBD. This work paves the way for further improving the overall performance of β-Ga2O3 TMSBDs.

Self Adaptive Logical Split Cache Techniques for Delayed Aging of NVM LLC

Due to the technological advancements in the last few decades, several applications have emerged that demand more computing power and on-chip and off-chip memories. However, the scaling of memory technologies is not at par with computing throughput of modern day multi-core processors. Conventional memory technologies such as SRAM and DRAM have technological limitations to meet large on-chip memory requirements owing to their low packaging density and high leakage power. In order to meet the ever-increasing demand for memory, researchers came up with alternative solutions, such as emerging non-volatile memory technologies such as STT-RAM, PCM, and ReRAM. However, these memory technologies have limited write endurance and high write energy. This emphasizes the need for a policy that will reduce the writes or distribute the writes uniformly across the memory thereby enhancing its lifetime by delaying the early wear out of memory cells due to frequent writes. We propose two techniques, Enhanced-Virtually Split Cache (E-ViSC) and Protean-Virtually Split Cache (P-ViSC), which dynamically adjust the cache configuration to distribute the writes uniformly across the memory to enhance the lifetime. Experimental studies show that E-ViSC and P-ViSC improve lifetime of NVM L2 caches by upto 2.31× and 1.97× respectively.

High‐Leakage‐Resistance and Low‐Turn‐On‐Voltage Upconversion Devices Based on Perovskite Quantum Dots

AbstractIn recent years, the remarkable optoelectronic characteristics exhibited by perovskite quantum dots (PQDs) have captured significant attention, which has spurred numerous investigations and novel applications. Nonetheless, the development of solution‐processed upconversion devices (UCDs) has predominantly centered around the utilization of organic materials, 3D perovskite films, and II‐VI quantum dots. In this work, PQDs are utilized for the first time as emission materials to enhance UCD performance. The stability of PQDs, synergistic coverage effect between PQDs and hole‐transporting layers (HTLs), and the interfaces of CGL/HTL are investigated in an attempt to identify the primary factor affecting UCD performance. The optimized UCD incorporating with effective TAPC HTLs demonstrate a maximum luminance of 463.9 cd m−2 at 520 nm (biased at 12 V and irradiated under 785 nm NIR light) accompanied by significant current gains of 167 times (at 3.4 V) and a noteworthy photon‐to‐photon conversion efficiency of 5.68% (at 12 V). The impressive performance is accompanied by a remarkably low turn‐on voltage of 1.4 V and a high leakage voltage of up to 12 V, making the highest record reported for solution‐processed UCDs.

Plastic Flow Diagram as a Tool for Plastic Waste Management System Assessment (Case Study: Banyuwangi Regency and Jembrana Regency)

Plastic waste is one of the biggest problems faced by Indonesia as the second largest contributor of plastic waste to the oceans in the world. The leakage of plastic waste from land to sea is generally caused by the lack of waste management in Indonesia. There are still many unsafe waste management practices carried out by Indonesian people. Therefore, an assessment and evaluation of waste management is needed to determine the appropriate intervention in waste management so as to reduce the leakage of plastic waste into the environment. Plastic Flow Diagram (PFD) applies the principle of Material Flow Analysis (MFA) that can rapidly and systematically assess the plastic waste management system and show the fates of plastic waste in the environment. The results of mapping the plastic waste flow show that waste handling in Banyuwangi Subdistrict and Negara Subdistrict has reached the national target that is 86,63% and 81,89%. Meanwhile, waste handling in Muncar Subdistrict and Jembrana Subdistrict is still far from the target, as much as 39,77% and 34,54%. Plastic waste leakage occurs at every stage of waste management. However, the highest leakage comes from sources. Platic waste that leaks into the environment ends up in drainage system, enters water bodies, retained on land, and burnt.

High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric

In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistor (p-FET) with a high current density of −4.9 mA/mm based on a O3-Al2O3/HfO2 (5/15 nm) stacked gate dielectric was demonstrated on a p++-GaN/p-GaN/AlN/AlGaN/AlN/GaN/Si heterostructure. Attributed to the p++-GaN capping layer, a good linear ohmic I−V characteristic featuring a low-contact resistivity (ρ c) of 1.34 × 10−4 Ω·cm2 was obtained. High gate leakage associated with the HfO2 high-k gate dielectric was effectively blocked by the 5-nm O3-Al2O3 insertion layer grown by atomic layer deposition, contributing to a high I ON/I OFF ratio of 6 × 106 and a remarkably reduced subthreshold swing (SS) in the fabricated p-FETs. The proposed structure is compelling for energy-efficient GaN complementary logic (CL) circuits.

Efficiency Optimization and Power Allocation of Omnidirectional Wireless Power Transfer for Multiple Receivers

Omnidirectional wireless power transfer to multiple devices has become a research hotspot due to its high spatial freedom and flexible design. However, this power supply method often faces the problems of high leakage flux and different receiver power requirements. This article studied the effects of currents of transmitting coils on transmission efficiency mathematically. A method of maximum efficiency tracking and power allocation for omnidirectional wireless power transfer to multiple receivers was proposed, and a mutual inductance identification method based on primary feedback is presented. Through the parameters identified by the primary side feedback, the current amplitudes and phases of the Tx coils were adjusted to achieve maximum efficiency, and the flexible power requirements of multiple devices can be realized. Finally, the above methods are experimentally verified. The two receivers can be charged with 58.8% efficiency and the power ratio can be precisely controlled from 0 to 100 percent, which is difficult for conventional method.

Invisible Frost Stress on Introduced Dalbergia odorifera: A Bioassay on Foliar Parameters in Seedlings from Six Provenances

Valuable trees are frequently taken from their original habitat and introduced to a different location in the pursuit of better economic development. Global climate change imposes a higher probability of warm spells during chilly seasons; these may increase the threat posed by frost to newly introduced, valuable species. In this study, Dalbergia odorifera was cultured as a valuable tree species that was introduced from an original provenance in Sanya (1° N) to the northern mountains in Pingxiang (22° N), Guangzhou (23° N), Zhangpu (24° N), Xianyou (25° N), and up to the northernmost limit in Wenzhou (28° N). Seedlings of these six provenances were tested in a field study conducted in Wenzhou (control) to examine their resistance to local frost stress and to detect the driving forces related to meteorological factors in the winter–spring period of 2015–2016. The leaves sampled over seven days exhibited the typical characteristics of frost impairment. The daily maximum temperature delivered warm spells, increasing by ~7 °C. The daily minimum temperature (−4.3 to −2.0 °C) did not reach freezing point until the early spring of 2016. The controlled seedlings showed lower malondialdehyde content than those from the southern locations, and no mortality occurred. Invisible frost stress was caused by low nitrogen utilization during the earlier stages during warm spells, as well as damage to membrane integrity during the later stage when the minimum temperature suddenly declined. A warm spell was found to impose a negative driving force five days before a sudden chill, which led to frost having an impact on superoxide accumulation and electrical leakage. We conclude that the D. odorifera seedlings that dwell effectively in Wenzhou obtained stronger resistance to local frost stress than those from the southern locations. Low cell membrane integrity and high electrical leakage in leaf cells accounted for the frost damage.

A fully non-volatile reconfigurable magnetic decoder

In recent years, emerging technologies like spintronics are gaining importance for their ability to tackle issues pertaining to CMOS like high leakage effect, complex data backup operation, and power gating. In this regard, Magnetic Tunnel Junction (MTJ), the most prominent spin device is chosen for our application. A fully Non-Volatile Reconfigurable Magnetic Decoder (NVRMD), using fully NVR NAND/AND and fully NVR NOR/OR logic gates is presented in this paper, following the Logic-In-Memory (LIM) architecture in attempts to mitigate the von Neumann Bottleneck. The proposed designs are superior to their contemporaries in terms of low power, less delay, and dynamic reconfigurability. Reduction in read energy by 79% and write energy by 28% has been achieved in the proposed NVR NAND/AND NOR/OR circuit compared to its counterpart. Corner analysis is performed to establish the robustness of the circuit under extreme conditions in CMOS and reliability analysis is done to understand the effect of process variations of MTJ parameters on the circuit performance.

Normalizing Tumor Blood Vessels to Improve Chemotherapy and Inhibit Breast Cancer Metastasis by Multifunctional Nanoparticles.

The abnormal tumor blood vessels with high leakage can promote tumor cells to infiltrate into the systemic circulation and increase the risk of tumor metastasis. In addition, chemotherapy may destroy tumor blood vessels and further aggravate metastasis. Normalizing tumor blood vessels can reduce vascular leakage and increase vascular integrity. The simultaneous administration of vascular normalization drugs and chemotherapy drugs may resist the blood vessels' destruction of chemotherapy. Here, multifunctional nanoparticles (CCM@LMSN/DOX&St), which combined chemotherapy with tumor blood vessel normalization, were prepared for the treatment of breast cancer. The results showed that CCM@LMSN/DOX&St-loaded sunitinib (St) promoted the expression of junction proteins Claudin-4 and VE-cadherin of endothelial cells, reversed the destruction of DOX to the endothelial cell layer, protected the integrity of the endothelial cell layer, and inhibited the migration of 4T1 tumor cells across the endothelial cell layer. In vivo experiments showed that CCM@LMSN/DOX&St effectively inhibited tumor growth in situ; what is exciting was that it also inhibited distal metastasis of breast cancer. CCM@LMSN/DOX&St encapsulated with St can normalize tumor blood vessels, reverse the damage of DOX to tumor blood vessels, increase the integrity of blood vessels, and prevent tumor cell invasion into blood vessels, which can inhibit breast cancer spontaneous metastasis and reduce chemotherapy-induced metastasis. This drug delivery platform effectively inhibited the progression of tumors and provided a promising solution for effective tumor treatment.

YOLO v7-ECA-PConv-NWD Detects Defective Insulators on Transmission Lines

This paper proposes an enhanced YOLO v7-based method for detecting insulator defects in transmission lines, addressing the challenges of low accuracy and high leakage rates caused by complex backgrounds and electric poles alongside varying sizes of insulator targets in the image. Firstly, to address the issue of background interference and improve the importance of insulator features, a lightweight attention mechanism named Efficient Channel Attention (ECA) was introduced. With the incorporation of ECA, this model could effectively suppress background noise and provide more focus to insulator regions, thus enhancing its ability to detect insulator defects accurately. Secondly, a partial convolution (PConv) approach was employed in the backbone network instead of conventional convolution, which learned some important channels. This substitution improved both the network model’s accuracy and the training speed. Finally, the Normalized Wasserstein Distance (NWD) prevented insulator features from being lost during pre-feature extraction, which reduced the leakage rate and improved the detection accuracy of small target insulators and defective insulators. The experimental results demonstrate that the improved YOLO v7 network model achieved an average detection accuracy (mAP) of 98.1%, recall of 93.7%, and precision of 96.8% on the TISLTR dataset. On the FISLTR dataset, the average detection accuracy (mAP) for flashover insulators was 93%, with a recall of 92.3% and precision of 87.1%. The average detection accuracy (mAP) for broken insulators was 92.2%, with a recall of 90.3% and a precision of 95.2%. These metrics demonstrate significant improvements in both datasets, highlighting the proposed algorithms’ strong generalization capability and practicable potential to detect insulator targets.

Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications

AlGaN HEMTs are popular devices for high-frequency applications. At higher frequencies, nonlinearity effects are major concerns and need serious attention. In this work, we have attempted to improve the linearity performance of graded channel Al x Ga1−x N/GaN HEMTs in comparison with abrupt channel GaN HEMTs through Technology Computer Aided (TCAD) simulation. In graded channel HEMTs, linearly grading of Al composition in the AlGaN layer, reduces the local carrier densities and provides improvement in the carrier saturation velocity. This provides an avenue to improve the overall linearity performance. A complete set of figures of merits (FOMs) such as and for both devices are presented. The simulation results have been calibrated with reported experimental results available in the literature. The graded devices are observed to have better transconductance (g m ) and drain current for gate voltages greater than −2 V. The drop in g m is reduced by nearly 50% at the higher gate-to-source voltages. Moreover, the RF figure of merits such as the current gain cutoff frequency (f T) and a maximum frequency of oscillation (f max) have been calculated for both devices. Due to the graded channel f T increases by 20% and f max becomes twice which makes it a better choice for high-voltage and high-power applications. The impact of interface trap and leakage current performance on the graded channel device are also reported. The cutoff frequency reduces by 25% with an increase in trap charge concentration from 9e17 cm−2 to 1e19 cm−2. Also, it has been found that the graded channel device shows better linearity and lower intermodulation distortion in comparison to the abrupt device which has been calculated from the linearity parameters. The high gate leakage current in the case of the graded channel device can be reduced by adding a thin GaN cap layer on the AlGaN channel which can be a future prospect of improving the performance of the graded GaN device.

Characterizing Shrouded Stator Cavity Flow on the Performance of a Single-Stage Axial Transonic Compressor

Abstract Shrouded stator cavity flow increases the stator total pressure loss, reduces the compressor isentropic efficiency, and thus limits the compressor pressure rise capability. This paper proposes a simplified cavity flow model that consists of flow injection at the stator inlet and flow suction at the stator outlet. Based on this model, a full-factorial parametric study on the leakage flow ratio and the leakage swirl angle is performed at different rotational speeds and incidences. In the first place, the effectiveness of the numerical method is validated against the experimental data based on the full-scale cavity geometry; then, the numerical simulations on the simplified cavity geometry are validated against that of the full-scale one. Results show that the leakage flow ratio plays a dominant role in determining the compressor performance penalty. The isentropic efficiency drops almost linearly with the leakage flow ratio due to deteriorated near-hub separations, and the slope becomes steeper at higher operating speeds and incidences. The leakage swirl angle only has a pronounced effect under a high leakage flow ratio. The efficiency penalty reduces with increasing swirl angle due to an alleviated tangential flow mixing and suppressed near-hub separations. The swirl angle effect is more pronounced at lower incidence conditions. These findings advance the fundamental understanding of shrouded stator cavity flow effects and provide useful guidance for cavity seal designs.

Near zero thermal performance loss of Al-Si microcapsules with fibers network embedded Al2O3/AlN shell

Al-Si alloy, a high temperature phase change material, has great potential in thermal management due to its advantages of high heat storage density and thermal conductivity. Microencapsulation of Al-Si alloy is one of the effective techniques to solve high temperature leakage and corrosion. In this paper, commercial Al-10Si alloy micro powders were encapsulated with flexible ceramic shells whose total thickness is below 1 µm by hydrothermal treatment and heat treatment in N2 atmosphere. The compositions and microstructures were characterized by XRD, SEM and TEM. The shell was composed of AlN fibers network structure embedded with α-Al2O3/AlN which prevented the alloy from leaking and oxidizing, as well as had excellent thermal stability. The latent heat of microcapsules was 351.8 J g–1 for absorption and 372.7 J g–1 for exothermic. The microcapsules showed near zero thermal performance loss with latent heat storage (LHS)/ release (LHR) was 353.2/ 403.7 J g–1 after 3000 cycles. Compared with the published Al-Si alloy microcapsules, both high heat storage density and super thermal cycle stability were achieved, showing promising development prospects in high temperature thermal management.

Improvement of leakage, magnetic and magnetodielectric properties in cobalt doped gallium ferrite

Gallium ferrite (GFO) is a magnetoelectric (ME) material, capturing growing attention due to its strong ME coupling at room temperature. However, the application of the material in practical use is hindered due to its high leakage. In this work, the effects of cobalt (Co) substitution at the iron (Fe) sites of GaFe1−x Co x O3 (0.0 ⩽ x ⩽ 0.1) polycrystals on the structure, electric and magnetic properties are investigated in detail. 5 at. wt.% substitution (x = 0.05) with cobalt ions achieves a reduction in leakage current density by four orders of magnitude due to reduced hopping between Fe3+ and Fe2+ ions and suppression of the oxygen vacancy formation. This is supported by higher dielectric constant and lower dielectric loss, as well as a significant difference between grain and grain boundary resistances. Two-phase-like magnetic behavior in magnetic hysteresis loop with enhanced magnetization and two magnetic transition temperatures are observed in the doped samples. All samples exhibited an increase in the magnetodielectric factor, indicating enhanced coupling between magnetic and electrical parameters. By concurrently increasing dielectric, magnetic, and coupling between them, this study describes a viable technique for lowering the most significant impediment to GFO’s usage as a ME device.