High Tunnel Magnetoresistance Ratio Research Articles

Fabrication of half-metallic Co2FeAlxSi1–x thin film with small magneto-crystalline anisotropy constant K1

A tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic sensor workable at room temperature. To achieve smaller magnetic field detection, both a high TMR ratio and small magnetic anisotropy of the free layer are required. In this study, we developed single crystalline Co-based Heusler alloy Co2FeAlxSi1-x films as the free layer of TMR sensors and systematically investigated their crystalline and magnetic properties. The magnetic tunnel junction (MTJ) with these alloys is a promising device for highly sensitive TMR sensors due to their half-metallicity. We evaluated the B2 and L21 ordering parameters SB2 and SL21. SB2 was above 80 % for all the samples and SL21 was 48 % at a maximum, which indicates that all the samples exhibit half-metallicity. In addition, we evaluated their first magneto-crystalline anisotropy constant K1 from magnetization curves. K1 changed from positive to negative as Al component x increases and K1 was about 1200 erg/cc at x = 0.33. These results indicate that Co2FeAlxSi1-x films around x = 0.33 have a good candidate for the free layer of TMR sensors because of their half-metallicity and small magnetic anisotropy.

Ultra-thin van der Waals magnetic tunnel junction based on monoatomic boron vacancy of hexagonal boron nitride.

We present a novel strategy to create a van der Waals-based magnetic tunnel junction (MTJ) comprising a three-atom layer of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) layers by introducing a monoatomic boron vacancy in each hBN layer. The magnetic properties and electronic structure of the system were investigated using density functional theory (DFT) and the transmission probability of the MTJ was investigated using the Landauer-Büttiker formalism within the non-equilibrium Green function method. The Stoner gap was created between the spin-majority channel and the spin-minority channel on the local density of states of the hBN monoatomic boron-vacancy (VB) near the Fermi energy, creating a possible control of the spin valve by considering two magnetic alignment of hBN(VB) layers, anti-parallel configuration (APC) and parallel configuration (PC). The transmission probability calculation results showed a high electron transmission in the PC of the hBN(VB) layers and a low transmission when the APC was considered. A high tunneling magnetoresistance (TMR) ratio of approximately 400% was observed when comparing the APC and PC of the hBN(VB) layers in hBN(VB)/Gr/hBN(VB), giving the highest TMR ratio for the thinnest MTJ system.

Enhancing spin-transfer torque in magnetic tunnel junction devices: Exploring the influence of capping layer materials and thickness on device characteristics

We have developed and optimized two categories of spin-ransfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance ratio, low critical current, high outputpower in the micro-watt range, and auto-oscillation behavior. These characteristics demonstrate the potential of STT-MTJs for low-power, high-speed, and reliable spintronic applications, including magnetic memory, logic, and signal processing. The only distinguishing factor between the two categories, denoted as A-MTJs and B-MTJs, is the composition of their free layers, two CoFeB/0.21 Ta/6 CoFeSiB for A-MTJs and two CoFeB/0.21 Ta/7 NiFe for B-MTJs. Our study reveals that B-MTJs exhibit lower critical currents for auto-oscillation than A-MTJs. We found that both stacks have comparable saturation magnetization and anisotropy field, suggesting that the difference in auto-oscillation behavior is due to the higher damping of A-MTJs compared to B-MTJs. To verify this hypothesis, we employed the all-optical time-resolved magneto-optical Kerr effect technique, which confirmed that STT-MTJs with lower damping exhibited auto-oscillation at lower critical current values. Additionally, our study aimed to optimize the STT-MTJ performance by investigating the impact of the capping layer on the device’s response to electronic and optical stimuli.

A 6T-3M SOT-MRAM for in-memory computing with reconfigurable arithmetic operations

Traditional von Neumann architecture bottlenecks such as the “memory wall” limit artificial intelligence (AI) development, and in-memory computing (IMC) as a new computing architecture can solve the above problems. Spin-orbit-torque-magnetic random access memory (SOT-MRAM) has very good advantages in IMC architecture because of its good compatibility with CMOS, high tunneling magnetoresistance (TMR) ratio, and high energy efficiency. In this paper, we propose a 6T-3M-based MRAM-IMC architecture with reconfigurable memory mode and logical operation mode. The functionality of the proposed architecture is validated using the 28 nm process design kit and the SOT-MTJ model.

Giant intrinsic magnetoresistance in spin-filtered tunnel junctions with ferrimagnetic electrode

In recent years, magnetic tunnel junctions (MTJs) have attracted strong research interest due to their potential use in nonvolatile memory technologies, such as magnetoresistive random access memory and magnetic logic applications. Half-metallic materials have been proposed as ideal electrode materials for MTJs to achieve large tunnel magnetoresistance (TMR) effects. Here, we design and investigate a spin-filter MTJ (sf-MTJ) consisting of a ferrimagnetic inverse Heusler alloy, ${\mathrm{Mn}}_{2}\mathrm{CoSi}$ as the electrode and CaS as the insulating tunnel barrier using ab initio quantum transport calculations. Our results demonstrate a high zero-bias voltage TMR ratio that initially oscillated before decreasing as the bias voltage increased. Despite the oscillatory TMR under bias voltage, the spin injection remains high and stable, highlighting the potential of sf-MTJs formed by ${\mathrm{Mn}}_{2}\mathrm{CoSi}$ electrodes for practical applications.

Voltage-gated spin-orbit torque switching in IrMn-based perpendicular magnetic tunnel junctions

In this work, IrMn-based perpendicular magnetic tunnel junctions (MTJs) are investigated. By inserting a thin W layer at an antiferromagnet/ferromagnet (AFM/FM) interface, we enhance the annealing temperature to 355 °C and obtain a high tunnel magnetoresistance ratio of 127%. Subsequently, field-free spin–orbit torque (SOT) switching of perpendicular MTJ is realized thanks to the in-plane exchange bias generated at the AFM/FM interface. Moreover, by applying a gate voltage, a coercive field is effectively decreased due to the voltage-controlled magnetic anisotropy (VCMA) effect. Finally, through the interplay of the SOT and VCMA effects, the critical switching current density is dramatically reduced by 73% (to 2.4 MA/cm2) and the total writing power consumption is decreased by 84% when a gate voltage of 0.76 V is applied. These findings pave the way for the practical applications of the IrMn-based perpendicular MTJs in low-power magnetic random-access memory.

Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO3 barriers

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles calculation and the Landauer formula shows that the Co-based MTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value (290%). Since the in-plane lattice periodicity of SrTiO$_{3}$ is about twice that of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) are folded in the $k_x$-$k_y$ plane corresponding to the $ab$ plane of the MTJ supercell. We find that this band folding gives a half-metallic band structure in the $\Lambda_1$ state of Co (Ni) and the coherent tunneling of such a half-metallic $\Lambda_1$ state yields a high TMR ratio. We also reveal that the difference in the TMR ratio between the Co- and Ni-based MTJs can be understood by different $s$-orbital weights in the $\Lambda_1$ band at the Fermi level.

Ab Initio Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect

Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as magnetoresistive random access memory as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based on HMMs do not exhibit current rectification, i.e., a diode effect, which was achieved in a magnetic tunnel junction concept [E. \ifmmode \mbox{\c{S}}\else \c{S}\fi{}a\ifmmode \mbox{\c{s}}\else \c{s}\fi{}\ifmmode \imath \else \i \fi{}o\ifmmode \breve{g}\else \u{g}\fi{}lu et al., ACS Appl. Electron. Mater. 1, 1552--9 (2019)] based on HMMs and type-II spin-gapless semiconductors (SGSs). The proposed concept has recently been experimentally demonstrated using Heusler compounds. In the present work, we investigate from first-principles MTJs based on type-II SGS and HMM quaternary Heusler compounds $\mathrm{Fe}\mathrm{V}\mathrm{Ta}\mathrm{Al}$, $\mathrm{Fe}\mathrm{V}\mathrm{Ti}\mathrm{Si}$, $\mathrm{Mn}\mathrm{V}\mathrm{Ti}\mathrm{Al}$, and $\mathrm{Co}\mathrm{V}\mathrm{Ti}\mathrm{Sb}$. Our ab initio quantum transport calculations based on a nonequilibrium Green's function method have demonstrated that the MTJs under consideration exhibit current rectification with relatively high on:off ratios. We show that, in contrast to conventional semiconductor diodes, the rectification bias voltage window (or breakdown voltage) of the MTJs is limited by the spin gap of the HMM and SGS Heusler compounds. A unique feature of the present MTJs is that the diode effect can be configured dynamically, i.e., depending on the relative orientation of the magnetization of the electrodes, the MTJ allows the electrical current to pass either in one or the other direction, which leads to an inverse TMR effect. The combination of nonvolatility, reconfigurable diode functionality, tunable rectification voltage window, and high Curie temperature of the electrode materials makes the proposed MTJs very promising for room-temperature spintronic applications and opens ways to magnetic memory and logic concepts as well as logic-in-memory computing.

Large tunneling magnetoresistance and low resistance-area product in CrSe2/NiCl2/CrSe2 van der Waals magnetic tunnel junction

The emergence of two-dimensional van der Waals (vdW) intrinsic magnets offers exciting opportunities to explore high-performance vdW magnetic tunnel junctions (vdW MTJs) and miniaturization of devices beyond Moore's law for future energy efficient nano-electronic devices. In this work, using first principles calculations, we investigate the spin-dependent transport of vdW MTJs formed by two vdW ferromagnetic (FM) CrSe2 electrodes and an interlayer antiferromagnetic bilayer NiCl2 barrier (CrSe2/NiCl2/CrSe2 vdW MTJ). We find that in contrast to the large resistance-area (RA) products higher than several kilohms square micrometer in crystalline MgO based MTJs with high tunneling magnetoresistance (TMR) ratios, the large TMR ratio of about 5200% and the low RA products ranging from 0.11 to 6 Ω μm2 are simultaneously achieved in the CrSe2/NiCl2/CrSe2 vdW MTJ at zero bias due to the spin-dependent tunnel transport associated with the FM CrSe2 electrode and the significant spin filtering effect associated with the half-metallic bilayer NiCl2 barrier. Moreover, the TMR ratio of the CrSe2/NiCl2/CrSe2 vdW MTJ increases first with increasing bias voltage and then decreases with the further increase in the bias voltage after reaching the highest value, and the optimized bias voltage can significantly promote the TMR ratio up to 12 000%. Our results pave the way to develop high-performance vdW MTJs with both large TMR ratios and low RA products for future spintronic applications.

Type-Y magnetic tunnel junctions with CoFeB doped tungsten as spin current source

Spin–orbit torque magnetic tunnel junctions (SOT-MTJs) with high tunneling magnetoresistance (TMR) ratio and high energy-efficiency are crucial for the development of SOT-magnetic random-access memory and other SOT devices. Here, the SOT-MTJs doped with an ultrathin layer of 0.2 nm CoFeB in the W writing line are fabricated, and the TMR ratio of the updated MTJs is up to 179%. Meanwhile, the SOT efficiency of the W layer doped with magnetic atoms (∼0.149) is weakly dependent on the doping, manifesting the intrinsic mechanism of the W layer in generating the spin Hall effect. This study shows promise of the magnetic-atom doped W/CoFeB/MgO/synthetic antiferromagnetic stacks to achieve high TMR and efficient type-Y SOT devices.

Evolution of magnetic and structural properties of MgO thin film with vacuum annealing

In this work, investigation of MgO thin film, deposited via e-beam evaporation is carried out with increasing annealing temperature. Structural properties, as elucidated using X-ray based techniques viz. grazing incidence XRD and X-ray reflectivity were associated with magnetic properties of film as observed using superconducting quantum interference device (SQUID) magnetometer. As-deposited film is polycrystalline in nature and exhibits ferromagnetism, which is attributed to presence of Mg vacancies. Vacuum annealing results densification of film with concurrent increase in electron density and reduction in film thickness and saturation magnetization. However, at sufficiently high temperature, electron density and saturation magnetization decreases comparative to as-deposited film. The results are significant for the optimization of desired functional properties of MgO particularly in MgO based magnetic tunnel junctions, providing high tunnel magnetoresistance ratio.

Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stability

Writing using spin–orbit torque (SOT) has been widely investigated in the field of magnetic random-access memory (MRAM). Heavy metal (HM)/CoFeB/MgO is the core of this SOT-MRAM structure. The heterostructure consisting of Ta as the spin current source and CoFeB/MgO as the perpendicular magnetic anisotropy (PMA) material is the most researched structure, owing to its high tunneling magnetoresistance ratio. However, Ta is difficult to integrate into the CMOS process due to its poor thermal stability against annealing at temperatures greater than 350 °C. Currently, β-tungsten (W) is the only HM with the CoFeB/MgO system, which can provide both thermal stability and SOT switching. Nevertheless, to achieve the high resistive β phase of W is a challenging task. Here, we report another material rhenium (Re) capable of providing thermally stable PMA up to temperature 425 °C with a perpendicular anisotropic field greater than 5000 Oe; Re possesses a spin hall angle (ϴSH) of 0.065 ± 0.003, and SOT switching can be achieved with a current density around 1.36 × 1011 A/m2. Our findings pave a new avenue for the material design of perpendicular SOT-based MRAM.

Giant tunneling magnetoresistance induced by bias voltage in spin-filter van der Waals magnetic tunnel junctions with an interlayer antiferromagnetic semiconductor barrier

Spin-filter van der Waals Magnetic tunnel junctions (sf-vdW MTJs) formed by an interlayer antiferromagnetic (AFM) vdW semiconductor as a barrier have exhibited promising prospects in achieving a high tunneling magnetoresistance (TMR) ratio in MTJs. Here, using first-principles calculations, we investigate the spin-dependent transport and the TMR effect of sf-vdW MTJs formed by sandwiching bilayer and trilayer $\mathrm{Ni}{\mathrm{Br}}_{2}$ barriers between two graphite electrodes ($\mathrm{Gr}/\mathrm{Ni}{\mathrm{Br}}_{2}/\mathrm{Gr}$ sf-vdW MTJs). Similar to the experimental results of sf-vdW MTJs formed by a few-layer $\mathrm{Cr}{\mathrm{I}}_{3}$ barrier, the TMR ratios of the $\mathrm{Gr}/\mathrm{Ni}{\mathrm{Br}}_{2}/\mathrm{Gr}$ sf-vdW MTJs increase first with the increase of bias voltage and decrease with the further increase of bias voltage after reaching the highest points because the conduction bands of the interlayer ferromagnetic (FM) $\mathrm{Ni}{\mathrm{Br}}_{2}$ barrier at the $K$ points go into the bias window earlier than those of the interlayer AFM $\mathrm{Ni}{\mathrm{Br}}_{2}$ barrier with the increase of bias voltage. Compared to the TMR ratios of about 170% and 206% at zero bias voltage, the TMR ratios of the $\mathrm{Gr}/\mathrm{Ni}{\mathrm{Br}}_{2}/\mathrm{Gr}$ sf-vdW MTJs with bilayer and trilayer $\mathrm{Ni}{\mathrm{Br}}_{2}$ barriers are largely increased about 34 and 67 times by the optimized bias voltage, respectively. Correspondingly, a giant TMR ratio of about 6000% and 14 000% can be achieved in the $\mathrm{Gr}/\mathrm{Ni}{\mathrm{Br}}_{2}/\mathrm{Gr}$ sf-vdW MTJs with bilayer and trilayer $\mathrm{Ni}{\mathrm{Br}}_{2}$ barriers at 0.14 and 0.125 V bias voltage, respectively. Our results elucidate the mechanism of bias voltage induced giant TMR ratio in the $\mathrm{Gr}/\mathrm{Ni}{\mathrm{Br}}_{2}/\mathrm{Gr}$ sf-vdW MTJs and provide promising routes for developing MTJs with a high TMR ratio.

Barrier-dependent electronic transport properties in two-dimensional MnBi2Te4-based van der Waals magnetic tunnel junctions

Tunneling magnetoresistance (TMR) and spin filtering effects in the magnetic tunnel junctions (MTJs) have drawn much attention for potential spintronic applications based on magnetic manipulation of electric transport. However, the traditional MTJs cannot meet the demand for rapid miniaturization of electronic components. Thus, van der Waals (vdW) MTJs with a few atomic layers stacked vertically are ideal candidates for atomic scale devices. In this work, by employing the non-equilibrium Green's function combined with density-functional theory, we systemically study the spin-dependent electronic transport properties across MnBi2Te4 (MBT)-based vdW MTJs with three typical barrier layers, i.e., monolayer hexagonal boron nitride (h-BN), monolayer graphene, and vacuum. By using graphite as the electrode of these junctions, we find that a high TMR ratio up to 4000% and almost 100% spin filtering ratio are realized in MBT|h-BN|MBT MTJ at low bias voltages. Moreover, a remarkable negative differential resistance effect is observed in MBT|h-BN|MBT and MBT|Graphene|MBT junctions. The observed barrier-dependent quantum transport phenomenon is explained by the transmission coefficient. Our unique design of these vdW structures reasonably overcomes the bottleneck of current leakage and avoids the interface contact issues and paves the way for the exploration of spintronics devices with better performance.

Giant tunneling magnetoresistance in van der Waals magnetic tunnel junctions formed by interlayer antiferromagnetic bilayer CoBr2

The discovery of two-dimensional (2D) van der Waals (vdW) intrinsic magnets has opened a promising avenue to design high-performance magnetic tunnel junctions (MTJs) based on 2D materials. In this work, using first-principles calculations, it is demonstrated that bilayer $\mathrm{Co}{\mathrm{Br}}_{2}$ is intrinsically a magnetic semiconductor with intralayer ferromagnetic (FM) and interlayer antiferromagnetic (AFM) couplings and the interlayer AFM coupling in bilayer $\mathrm{Co}{\mathrm{Br}}_{2}$ is independent on the stacking orders. Moreover, using the nonequilibrium Green's function combined with density functional theory, it is found that due to the large difference between interlayer AFM and FM states of the $\mathrm{Co}{\mathrm{Br}}_{2}$ barrier, the conductance of spin filter (SF) vdW MTJs based on the graphene/bilayer $\mathrm{Co}{\mathrm{Br}}_{2}$/graphene heterostructure for the interlayer FM state of the $\mathrm{Co}{\mathrm{Br}}_{2}$ barrier is about 25 times that for the interlayer AFM state of the $\mathrm{Co}{\mathrm{Br}}_{2}$ barrier. Consequently, a high tunneling magnetoresistance (TMR) ratio of $2420%$ is achieved in this SF-vdW MTJ at zero bias. In particular, because the current for the interlayer FM state of the $\mathrm{Co}{\mathrm{Br}}_{2}$ barrier rapidly increases with the increase of bias voltage, a giant TMR ratio of up to about $38\phantom{\rule{0.16em}{0ex}}000%$ can be achieved in this SF-vdW MTJ at 0.2-V bias. Our results suggest that SF-vdW MTJs formed by the interlayer AFM barrier with variable conductivity hold great potential for developing vdW MTJs with a high TMR ratio.

Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study

We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMR ratios and magnetocrystalline anisotropies on the basis of the first-principles calculations. The analysis shows that the MTJs with Co-based alloys (CoNi, CoPt, and CoPd) have high TMR ratios over 2000$\%$. These MTJs have energetically favored Co-O interfaces where interfacial antibonding between Co $d$ and O $p$ states is formed around the Fermi level. We find that the resonant tunneling of the antibonding states, called the interface resonant tunneling, is the origin of the obtained high TMR ratios. Our calculation of the magnetocrystalline anisotropy shows that many $L1_1$ alloys have large perpendicular magnetic anisotropy (PMA). In particular, CoPt has the largest value of anisotropy energy $K_{\rm u} \approx 10\,{\rm MJ/m^3}$. We further conduct a perturbation analysis of the PMA with respect to the spin-orbit interaction and reveal that the large PMA in CoPt and CoNi mainly originates from spin-conserving perturbation processes around the Fermi level.

Perpendicular magnetic anisotropy of a Ta/NiFeB/MgO system and its magnetic coupling with [Pt/Co] multilayers

The perpendicular magnetic anisotropy (PMA) and crystalline structure of Ta/NiFeB/MgO stacks are investigated. When the stack is annealed, PMA is induced and the magnetic moment increases due to the crystallization of bcc NiFe from amorphous NiFeB. This structure is combined with [Pt/Co]6 multilayers to study the change in the magnetic coupling and PMA behavior with the change in the Ta thickness inserted in-between and the annealing temperature. Among the [Pt/Co]6/Ta/NiFeB/MgO stacks, the stack with a 0.5-nm-thick Ta layer shows the strongest PMA with an effective PMA energy density of 4.4 × 106 erg/cm3 upon annealing at 400 °C. Further, the X-ray diffraction study of the crystalline structures confirms the formation of the NiFe (001) phase, which is essential for achieving a high tunneling magnetoresistance ratio.

Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹

We fabricated a quadruple-interface perpendicular magnetic tunnel junction (MTJ) (Quad-MTJ) down to 33 nm using physical vapor-deposition, reactive ion etching, and damage-control integration process technologies that we developed under a 300-mm process. We demonstrated the greater scalability and higher writing speed of Quad-MTJ compared with double-interface perpendicular MTJ: 1) it has twice the thermal stability factor—1X nm Quad-MTJ can achieve 10 years retention—while maintaining a low resistance-area product and high tunnel magnetoresistance ratio; 2) smaller overdrive ratio of write voltage to obtain a sufficiently low write-error rate; 2) smaller pulsewidth dependence of the switching current; and 4) more than double the write efficiency at 10-ns write operation down to 33-nm MTJ. The effective suppression of the switching current increase for higher write speeds was explained by the spin-transfer-torque model using the Fokker-Planck equation. Our 33-nm Quad-MTJ also achieved excellent endurance (at least 1011) owing to its higher write efficiency and low-damage integration-process technology. It is thus a promising method for low power, high speed, and reliable STT-MRAM with excellent scalability down to the 1X nm node.

Ultrahigh tunneling magnetoresistance in van der Waals and lateral magnetic tunnel junctions formed by intrinsic ferromagnets Li0.5CrI3 and CrI3

Two-dimensional (2D) intrinsic magnets have been used to construct magnetic tunnel junctions (MTJs) with a high tunneling magnetoresistance (TMR) ratio, including van der Waals (vdW) MTJs and lateral MTJs. In this work, we design vdW and lateral MTJs formed by a ferromagnetic (FM) CrI3 barrier and two half-metallic Li0.5CrI3 electrodes, respectively, and investigate the TMR effect of these MTJs using the non-equilibrium Green's function combined with density functional theory. Interestingly, it is found that due to the half-metallicity of the Li0.5CrI3 electrode, the total conductances of vdW and lateral MTJs for the parallel configuration (PC) of magnetizations of two electrodes are about 12 and 11 orders of magnitude larger than those for the antiparallel configuration (APC) of magnetizations of two electrodes, respectively. Consequently, the ultrahigh TMR ratios of up to 1.48 × 1014 and 2.86 × 1012 are achieved in the designed vdW and lateral MTJs, respectively. Remarkably, the TMR ratio of 1.48 × 1014 is the highest ratio in MTJs based on 2D materials. Moreover, due to the CrI3 barrier in vdW MTJs becoming FM half-metal, the majority-spin conductance of vdW MTJs for PC of magnetizations of two electrodes is about 2 orders of magnitude larger than that of lateral MTJs, and thus, the TMR ratio of vdW MTJs is about 2 orders of magnitude larger than that of lateral MTJs. Our results suggest that vdW and lateral MTJs formed by the FM CrI3 barrier and half-metallic Li0.5CrI3 electrodes hold great potential for applications in spintronic devices.

Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000$\%$, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: The interfacial $d$-$p$ antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/Fe(Co)(001).