The water absorption characteristics and desorption characteristics of atmospheric-pressure chemical vapor deposited (APCVD) tetraethylorthosilicate and ozone film have been studied in detail to apply film to LSI intermetal dielectric film. film absorbs a large amount of water from the air, and desorbs the water at 200°C or less. It has also been found that titanium thin film deposited on film suppresses water desorption from film completely. Titanium thin film deoxidizes water desorbed from film to hydrogen even at 200°C or less. The reliability of aluminum wiring with intermetal dielectric film has not been sufficient because of aluminum film bursting in the via-hole formed on film during high-temperature storage testing at 150°C or more. However, if titanium thin film is used as the lowest layer of the accumulating aluminum wiring structure on film, aluminum bursting in the via-hole is suppressed completely. We consider the aluminum bursting to be caused by water pressure during the high-temperature storage testing, and the suppression by the titanium thin film to be caused by titanium deoxidization of water to hydrogen. © 2004 The Electrochemical Society. All rights reserved.