The inclusion of quantization effects on the carrier densities is now the state of the art in modern semiconductor device simulators and yields, for example, quantum-corrected threshold voltages and quantum-mechanical models of the channel mobility. However, the effect of charge quantization on nonradiative thermal generation–recombination has not received much attention. In this article, Shockley–Read–Hall recombination is examined for situations in which electrons and/or holes are confined in semiconductor devices. For the transitions between band states and a single deep level, a previously developed multiphonon description is adopted. It is found that the lifetimes have to be altered due to the same quantized local density of states that also accounts for the carrier distribution. Numerical evaluation of this model for one-dimensional potentials and small phonon energies results in spatially varying lifetime profiles that exhibit two opposite regimes. The additional nonclassical offset of the subband eigenenergies causes an increased lifetime in the limit of strong quantum confinement. For nondegenerate statistics, an analytical high-temperature approximation is presented for this limit, where the activation energy of the lifetime is increased by the lowest-subband offset. In the absence of confinement, however, high electric fields reduce the lifetime due to carrier tunneling into the bandgap.
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