The depth profiles of lattice strain near the interface regions of LaAlO 3/Si and the SiO 2 interfacial layer/Si were investigated by the ion channeling technique using high-resolution Rutherford backscattering spectroscopy (HRBS). In the case of the LaAlO 3/Si stack, horizontal tensile strain in the Si near the interface was clearly observed. However, this strain was relaxed by formation of the interfacial layer through annealing in an oxygen ambient. These results suggest that the strain in Si induced by a dielectric strongly depends on the material in contact with Si.