Abstract
Tetrairidium dodecacarbonyl (Ir4(CO)12) is an organometallic compound called metal cluster complex which has a molecular weight of 1104.9. To investigate its irradiation effect, silicon substrates sputtered with 10keV Ir4(CO)7+ were analyzed by high resolution Rutherford backscattering spectrometry. Experimental results were examined on the basis of a conventional theory of simultaneous implantation and sputtering. The introduction of oxygen gas during sputtering proved to form a thick oxide layer in the substrate, resulting in iridium segregation at the silicon-oxide interface and carbon accumulation near the surface. It was confirmed that oxygen partial pressure significantly affected the characteristics of an altered layer beneath a sputtered surface.
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