High Power Electronics Research Articles

Experimental study of flake graphite large-area explosion electron emission cathode performance based on particle size discrepancy

Graphite is the most commonly used large-area cathode material in the high-power vacuum electron device for its long life and good repetitive-frequency performance, but its particle size selection scheme has not been elucidated. Therefore, in the present work, the explosive electron emission properties of flake graphite large area explosive electron emission cathodes with varied particle sizes are studied. The 320 mesh flake graphite has a current delay reduction of 0.2–0.9 ns compared to other samples at the same peak voltage. According to the Murphy–Good equation, the emission performance of each sample during the priming stage was calculated, and the threshold characteristics of 320 mesh flake graphite were significantly better than the other samples. After the space charge limited current is formed, the plasma expansion rate of all samples is 1.2±0.2cm/μs with a difference not exceeding 4% between samples. Our research provides a strong basis for the selection of raw materials for graphite based large area explosive electron emission cathodes and contributes to the development of cross-field high-power vacuum devices.

Multi-entropy electrocaloric film induced by three-dimensional thermal conductive ceramic network for synergistic thermal management

Imparting high thermal conductivity to electrocaloric refrigeration polymers is a promising solution for efficiently synergizing and accurately managing the vast heat generated by high-power density electronics. We employed a sacrificial template method to construct a three-dimensional thermally conductive SiOC ceramic network and embedded it in the electrocaloric polymer. The electrocaloric composite film with a 1 wt. % SiOC achieved a synergistic improvement in heat transfer and electrocaloric cooling, while the thermal diffusivity of the 10 wt. % composites increased sixfold. The three-dimensional ceramic network not only acted as a heat transfer pathway but also induced the transition of the electrocaloric polymer chain to a high-entropy state, increasing the number of dipole entities that could be driven by the electric field. The system reached a refrigeration temperature change of 2 K at a field strength of as low as 30 MV m−1. The high-entropy and high-crystallized electrocaloric composite film induced by the SiOC thermal conductive interface provides a tool for synergistic thermal management.

Analysis of Confined Jet Impingement in Converging Annular Microchannel Heat Sinks

Jet impingement cooling is deemed an excellent choice for the thermal management of high-power electronics. However, high-pressure drop penalties and low local heat transfer coefficients in regions far from the jet zone are its drawbacks. Although it is reported that recirculation areas appear because of the entrainment, the effects of recirculation size on thermal behavior are not understood well enough. Here, jet impingement heat sinks with converging annular channels are employed in a numerical investigation to minimize the adverse cooling effects associated with an impinging jet in a microchannel. The realizable k−ε turbulent model is used for modeling thermal and turbulent flow fields (Re=5,000 to 25,000). It was found that the different flow recirculation zones in small scales are responsible for the enhanced heat transfer rate. While the thermal performance of a converging wall jet impingement heat sink is higher than its flat wall counterpart at low Re numbers, the thermal performance results are in favor of the flat wall jet impingement heat sink at high Re numbers. The flow recirculation area shrinks in converging channels at high Re numbers, thereby deteriorating the thermal performance of the converging channel compared with a flat wall jet heat sink. Also, it was found that employing steeper converging channels shrinks the flow recirculation region, resulting in up to 59% lower pressure drops at Re=25,000. The present study examines the role of flow recirculation at different Re numbers on the thermohydraulic performance of jet impingement converging annular heat sinks.

The lattice thermal conductivity of hafnia: The influence of high-order scatterings and phonon coherence

Hafnia (HfO2) is a potential candidate for the high-k gate dielectrics in next-generation high-power electronics. Its thermal transport properties, which determine the performance of these related high-power electronics, are critical while rarely investigated. Here, the thermal transport properties of HfO2 in a wide temperature range of 300–2000 K with a phase transition between monoclinic and tetragonal phases at ∼1765 K, are systematically studied based on the temperature-dependent effective potential landscapes with both propagating and coherence thermal transport considered. It is found that the cage-like structure of monoclinic HfO2 results in the avoid crossing in the phonon band structures, which increases the three-phonon scattering largely. Some phonon modes with significant scattering matrix can have relatively larger 3ph and 4ph scattering rates in tetragonal HfO2. Consequently, the thermal conductivity of HfO2 is only 11.95–1.72 W/mK at 300–2000 K. Our results further show that propagating phonon channels dominate the thermal transport in HfO2 and contribute at least 70% to the total thermal conductivity. The rest of the thermal conductivity of HfO2 results from the coherence thermal transport channels, which is caused by the overlap of phonons. Four-phonon scatterings are found to be significant for the thermal transport in tetragonal HfO2, which can result in a thermal conductivity reduction of ∼50%. Our results here advance the understanding of the thermal transport in HfO2, which may benefit the performance optimization of HfO2-related electronics.

Effective gate length determination of AlGaN/GaN HEMTs from direct measurements of thermal signatures

Determining junction temperature and two-dimensional temperature profile is critical for high-power GaN-based high electron mobility transistors to optimize performance, improve device reliability, and better thermal management. Here, we have demonstrated that resistance temperature detectors of the same material as the gate contact delineated between gate-to-source and gate-to-drain regions can accurately profile the temperature along the channel. The temperature profile is asymmetric and skewed toward the drain side, and the degree of asymmetry is used to determine the effective gate length experimentally. A two-dimensional thermodynamic model along with drift-diffusion transport matches well with the experimental data, validating the temperature profile and effective channel length extraction under bias. The vertical depth profiling of the temperature is also determined by identifying the isothermal profile through the resistance temperature detectors. The isothermal lines are largely circular in the GaN region from isotropic two-dimensional heat diffusion, with the pinch-off region acting as a heating filament. The isothermal circular profile turns elliptical in the SiC substrate due to its higher thermal conductivity.

Growth optimization, optical, and dielectric properties of heteroepitaxially grown ultrawide-bandgap ZnGa2O4 (111) thin film

Ultrawide bandgap ZnGa2O4 (ZGO) thin films were grown on sapphire (0001) substrates at various growth temperatures with a perspective to investigate the electrical and optical characteristics required for high-power electronic applications. Due to the variation in the vapor pressure of Zn and Ga, severe loss of Zn was observed during pulsed laser deposition, which was solved by using a zinc-rich Zn0.98Ga0.02O target. A pure phase single-crystalline ZGO thin film was obtained at a deposition temperature of 750 °C and an oxygen pressure of 1 × 10−2 Torr. The out-of-plane epitaxial relationship between the sapphire and ZGO thin film was obtained from φ-scan. The x-ray rocking curve of the ZGO thin film grown at 750 °C exhibits a full width at half maximum of ∼0.098°, which indicates a good crystalline phase and quality of the thin film. Core-level x-ray photoelectron spectroscopy of ZGO grown at 750 °C indicated that Zn and Ga were in the 2+ and 3+ oxidation states, respectively, and the atomic ratio of Zn/Ga was estimated to be ∼0.48 from the fitted values of Zn-2p3/2 and Ga-2p3/2. The high-resolution transmission electron microscopy images revealed a sharp interface with the thickness of the ZGO film of ∼265 nm, and the signature of minor secondary phases was observed. The bandgap of the ZGO film at different growth temperatures was calculated from the ultraviolet-diffuse reflectance spectroscopy spectra, and its value was obtained to be ∼5.08 eV for the 750 °C grown sample. The refractive index (n) and the extinction coefficient (k) were determined to be ∼1.94 and 0.023 from the ellipsometric data, respectively, and the real dielectric function (ɛr) was estimated to be ∼6.8 at energy 5 eV. The ultrawide bandgap and dielectric function of ZGO recommend its possible potential applications in deep-ultraviolet optoelectronic devices and high-power electronics.

A heat transfer model for liquid film boiling on micro-structured surfaces.

High heat transfer coefficient (HTC) and critical heat flux (CHF) are achieved in liquid film boiling by coupling vibrant vapor bubbles with a capillary liquid film, which has thus received increased interest for thermal management of high-power electronics. Although some experimental progress has been made, a high-fidelity heat transfer model for liquid film boiling is lacking. This work develops a thermal-hydrodynamic model by considering both evaporation atop the wick and nucleate boiling inside the wick to simultaneously predict the HTC and CHF. Nucleate boiling is modeled with microlayer evaporation theory, where a unified scaling factor is defined to characterize the change of microlayer area with heat flux. The scaling factor η is found to be independent of wicking structure and can be determined from a few measurements. This makes our model universal to predict the liquid film boiling heat transfer for various micro-structured surfaces including micropillar, micropowder, and micromesh. This work not only sheds light on understanding fundamental mechanisms of phase-change heat transfer, but also provides a tool for designing micro-structured surfaces in thermal management.

Microscopic fracture toughness of notched porous sintered Cu micro-cantilevers for power electronics packaging

To fulfill the high-temperature application requirement of high-power electronics packaging, Cu nanoparticle sintering technology, with benefits in low-temperature processing and high-melting point, has attracted considerable attention as a promising candidate for the die-attach interconnect. Comprehensive mechanical characterization of the sintered layer at a microscale is necessary to deepen the understanding of the fracture behavior and improve the reliable design of materials. In this study, microscale cantilevers with different notch depths were fabricated in a 20 MPa sintered interconnect layer. Continuous dynamical fracture testing of the microcantilevers was conducted in situ in a scanning electron microscope to detail the failure characteristic of the porous sintered structure. The microscopic fracture toughness of different notched specimens was obtained from the J-integral in the frame of elastic-plastic fracture mechanics. Specimens with deeper notches presented higher resistance to crack extension, while geometry factors of notch-to-width ratio between 0.20 and 0.37 exhibited a relatively stable microscopic fracture toughness ranging from 3.2 ± 0.3 to 3.6 ± 0.1 MPa m1/2.

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics.

High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240-600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

Surface functionalization enabling highly effective phase-change heat transfer of R1234yf: A molecular dynamics study

Phase-change heat transfer has been demonstrated to be an effective thermal management approach for high-power electronics and power generators. In this work, we propose a strategy using surface functionalization to enhance the phase-change heat transfer of an environmentally friendly refrigerant, i.e., hydrofluoroolefins (HFO)-based R1234yf. Using molecular dynamics simulations, we find that the evaporation (condensation) heat transfer coefficient (HTC) at self-assembled monolayer (SAM) functionalized gold (Au) surfaces can be increased by ∼7 (∼5) times compared to that at the planar Au surfaces. The improvement in phase-change heat transfer of R1234yf at functionalized Au surfaces arises from the high thermal conductance across functionalized Au/R1234yf interfaces and the strong vibrational couplings between SAM molecules and R1234yf molecules. On the one hand, the introduced SAM layer can increase the interfacial thermal conductance (ITC) between Au and R1234yf owing to the strong bonding between Au and the SAM molecules, as well as the strong vibrational couplings at low-frequency modes (0–6 THz) among Au, SAM, and R1234yf. On the other hand, the thermal energy exchange during the evaporation (condensation) process can be improved by surface functionalization through the vibrational couplings between SAM and R1234yf at high frequency (∼12 and ∼30 THz) regions. This dual vibrational coupling will then allow the SAM layer to work as an intermedia to bridge the vibrations between Au and R1234yf molecules, which in return benefits the phase-change heat transfer. By further characterizing the evaporation and condensation processes, we find that the evaporation rate of R1234yf is increased by ∼50% at most at the wall superheat <70 K when the Au surfaces are functionalized using SAMs. When the wall superheat is above 70 K (i.e., 100 K for the planar Au surface), the evaporation of R1234yf becomes like film evaporation in which clusters of R1234yf molecules move off the surface together, which limits the enhancement (i.e., ∼100% at most) of evaporation HTC at the functionalized Au surfaces. At the same time, the condensation rate at functionalized Au surfaces is found to be increased by 15%–100% compared to that of the planar Au surfaces. By elucidating the mechanisms governing phase-change heat transfer on functionalized surfaces, our results provide an efficient strategy to enhance the cooling efficiency of the HFO refrigerants, which may benefit the design of surfaces with high phase-change heat transfer capabilities.

Determining the influence of technological parameters of electron beam surfacing process on the microstructure and microhardness of Ti-6Al-4V alloy

This paper reports the devised technology and equipment for manufacturing parts and assemblies with pre-defined properties by 3D printing methods. Underlying the technology is the application of a high-power electron beam to fuse metal powder in a vacuum chamber with the formation of successive layers that repeat the contours of the digital model of the product. The object of research is the process of surfacing products made of Ti6Al4V titanium alloy powder. The influence of technological parameters (speed and power of the electron beam) on the formation of the structure of the deposited metal and its mechanical properties was investigated. 3 samples printed under 3 modes were studied: beam speed, 270, 540, and 780 mm/s; power, 240, 495, and 675 W, respectively. The beam energy density was 44.5 J/mm3; the trajectory displacement step was 0.2 mm; the dynamic focusing current Idf was –0.31 A; and the powder layer thickness was 0.1 mm. The samples were examined by conventional methods. The structures were studied using an optical microscope, images were recorded with a camera. The Vickers hardness was measured with a microhardness meter in the direction from the technological supports to the surface of the sample, as well as along the surface of the product, and in the layers of the middle part of the sample. It was established that the articles had a dense cast structure of surfaced metal. On all samples, large crystallites with a uniform lamellar-acicular structure of α´-phase with a small amount of β-phase are formed along the height, mostly without defects with uniform microhardness both along the height and along the surface. It was determined that the surfacing mode at beam speed, 240 mm/s; power, 270 W is the most rational for practical use. Under this mode, a stronger structure is formed when it is crushed, reducing the width of the crystallites by 1.55 and 1.17 times compared to other modes

SiC Die Attach Based on Sintered for Wide Band Gap Semiconductor

Silver sintered die attach materials offer a new interconnect technology. Hybrid sintering die attach paste is resin-based and has the same application as standard die attach paste applications, but it does not require high pressure and high temperature for sintering. It features excellent workability that enables stable application for 24 continuous hours, without silver sedimentation or separation. Lead-free die attach materials that offer simplified processing, robust reliability and best-in-class thermal and electrical performance for high power semiconductor packages. SiC is next generation Wide Band Gap semiconductor material for high temperature power electronics for automotive and telecommunication. We would like to introduce a SiC die attach based on sintering solution for WBG packages. Features is thermal conductivity &gt;200 W/m.k, pressure less die attach process, low temperature cure under nitrogen atmosphere, and any treated surface excellent adhesion to all treated surfaces.

Characteristics analysis and structure optimization of a hybrid micro-jet impingement/micro-channel heat sink

To solve the heat dissipation problem of high-power electronics, a novel hybrid micro-jet impingement/micro-channel heat sink is proposed in this work. Different from the continuous and straight rectangular micro-channel, the inclined and interrupted channel walls (fins) are adopted to enhance the fluid disturbance inside the heat sink. To obtain the thermal–hydraulic performance of the hybrid heat sink, an overall 3D modeling and numerical simulations are conducted instead of local cell numerical simulation. In addition, to further improve the heat transfer and flow resistance performance, the effects of variation of structural parameters on heat transfer and flow resistance properties are investigated, including the fin inclination angle, fin length and fin height. The results of structural parametric analysis reveal that there are interactions between different structural parameters, but with different levels of significance for different evaluation indicators. Then, to obtain the optimal combinations of structural parameters for different applications, the multi-objective genetic algorithm coupled with artificial neural network (ANN) is utilized to search for the optimal value of each structural parameter. The heat transfer thermal resistance, pressure drop and mean absolute temperature deviation of the heated surface are utilized as the optimization objectives to evaluate the cooling and resistance characteristics. The optimization results obtained by three-objective optimization and two-objective optimization are analyzed and compared. Finally, seven optimal compromise solutions are selected from the Pareto front by using TOPSIS algorithm with different weight factor matrices. For the optimal compromise solutions, the maximum relative errors between the predicted values of the ANN and numerical simulation values are only 3%, which further demonstrates the accuracy of the artificial neural network model and the effectiveness of using multi-objective optimization to guide heat sink design.

Effect of Electron Beam Surface Modification on the Plasticity of Inconel Alloy 625

In the present work, we present results on the influence of electron beam surface modification on the resistance to plastic deformation and plasticity of Inconel alloy 625. During the treatment procedure, the electron beam currents were 10 and 20 mA, corresponding to beam powers of 600 W and 1200 W. The structures of the modified specimens were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). The nanohardness and Young’s modulus were studied through nanoindentation experiments. The plasticity of the treated materials as well as of the untreated ones was studied through an evaluation of H3/E2, which points to resistance to plastic deformation. The results obtained show that the electron beam surface modification procedure leads to a reorientation of microvolumes and the formation of a preferred crystallographic orientation. The surface treatment of the samples using an electron beam with a power of 600 W did not lead to major changes in the structures of the samples. However, the use of a beam with a power of 1200 W led to the formation of a clearly separated modified zone with a thickness in the range of 13 to 15 μm. The Young’s modulus increased from about 100 to 153 GPa in the case of electron beam surface modification using the lower-power electron beam. The application of the higher-power electron beam did not lead to a significant change in the modulus of elasticity as compared to the untreated specimen. Also, it was found that the treatment procedure pointed to a decrease in nanohardness when the maximum power of the electron beam was applied. The resistance to plastic deformation, i.e., the H3/E2 ratio, showed that the ratio decreased significantly in both cases of electron beam surface modification, pointing to an improvement in the plasticity of the surface of the Inconel alloy 625.

Enhanced boiling heat transfer performance on wettability-patterned surface

As an efficient heat transfer method, boiling heat transfer (BHT) plays an important role in strengthening the thermal management of high-power electronics, etc. In this work, the wettability patterns are prepared on copper substrate by mask-assisted chemical processing method, which enhances the BHT performance. We firstly treat the copper surface into superhydrophilic by chemical immersion, and then it is modified by fluorosilane into superhydrophobic, and wettability patterns are formed with the assistance of mask. Then, the BHT performances and the corresponding bubble dynamics of the wettability-patterned surfaces are experimentally investigated. Finally, the optimal BHT performances of the wettability-patterned surface prepared by the proposed method are compared with other modified surfaces. The results show that the BHT is improved dramatically on the wettability-patterned surface, the critical heat flux (CHF) and the heat transfer coefficient (HTC) improve by 23% and 56%, respectively. Under high heat flux, the decrease of hydrophobic pattern size can significantly improve the BHT performances, while under low heat flux, reducing the hydrophobic pattern pitch can improve the BHT performances to a certain extent. The reduction of the hydrophobic area has a significant effect on the CHF and HTC.

Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers.

Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-based electronics. While AlN transition layers are commonly employed in the heteroepitaxial growth of GaN-on-SiC substrates, concerns have been raised about their impact on thermal transport across GaN/SiC interfaces. In this study, we present experimental measurements of the thermal boundary conductance (TBC) across GaN/SiC interfaces with varying thicknesses of the AlN transition layer (ranging from 0 to 73 nm) at different temperatures. Our findings reveal that the addition of an AlN transition layer leads to a notable increase in the TBC of the GaN/SiC interface, particularly at elevated temperatures. Structural characterization techniques are employed to understand the influence of the AlN transition layer on the crystalline quality of the GaN layer and its potential effects on interfacial thermal transport. To gain further insights into the trend of TBC, we conduct molecular dynamics simulations using high-fidelity deep learning-based interatomic potentials, which reproduce the experimentally observed enhancement in TBC even for atomically perfect interfaces. These results suggest that the enhanced TBC facilitated by the AlN intermediate layer could result from a combination of improved crystalline quality at the interface and the "phonon bridge" effect provided by AlN that enhances the overlap between the vibrational spectra of GaN and SiC.

Surface Transfer Doping in MoO3-x/Hydrogenated Diamond Heterostructure.

Surface transfer doping is proposed to be a potential solution for doping diamond, which is hard to dope for applications in high-power electronics. While MoO3 is found to be an effective surface electron acceptor for hydrogen-terminated diamond with a negative electron affinity, the effects of commonly existing oxygen vacancies remain elusive. We have performed reactive molecular dynamics simulations to study the deposition of MoO3-x on a hydrogenated diamond (111) surface and used first-principles calculations based on density functional theory to investigate the electronic structures and charge transfer mechanisms. We find that MoO3-x is an effective surface electron acceptor and the spatial extent of doped holes in hydrogenated diamond is extended, promoting excellent transport properties. Charge transfer is found to monotonically decrease with the level of oxygen vacancy, providing guidance for engineering of the surface transfer doping process.

Photo-induced electron paramagnetic resonance: A means to identify defects and the defect level throughout the bandgap of ultrawide bandgap semiconductors

Ultrawide bandgap semiconductors (UWBGs) provide great promise for optical devices operating in the near to deep ultraviolet, and recently they have become a viable semiconducting material for high power electronics. From the power grid to electronic vehicles, the intention is to replace massively awkward components with the convenience of a solid state electronic “chip.” Unfortunately, the challenges faced by wide bandgap electronic materials, such as GaN and SiC, increase as the bandgap increases. A point defect, for example, can take on more charge states and energy configurations. This perspective describes a method to investigate the many charge states and their associated transitions—photo-induced electron paramagnetic resonance (photo-EPR) spectroscopy. Although not new to the study of defects in semiconductors, photo-EPR studies can probe the entire ultrawide bandgap given the appropriate light source for excitation. Examples provided here cover specific defects in UWBGs, AlN, and Ga2O3. The discussion also reminds us how the rapid pace of discovery surrounding this newest class of semiconductors is due, in part, to fundamental research studies of the past, some as far back as a century ago and some based on very different materials systems.

High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond.

Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n- and p-channel conductivity are required for the development of diamond complementary metal-oxide-semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n-type channel MOS field-effect transistors (MOSFETs). Here, electronic-grade phosphorus-doped n-type diamond epilayer with an atomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around 150cm2V-1 s-1 at 573K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.

Freeze Drying of Organically Modified Layered Silicates as Key Step to Improve the Barrier Properties of Organic Coatings for High Power Electronics Protection

AbstractOrganically modified layered silicates can be used as barrier pigments in organic coating systems to reduce the permeation of water vapor and gases, e.g., oxygen as well as harmful gases that promote corrosion. Unmodified layered silicates are not sufficient to reduce the permeation significantly. However, the arrangement and orientation of the particles have an enormous impact on the later performance in the barrier film. In organic solvents or non‐aqueous polymer matrices the non‐modified layered silicates cannot exfoliate adequately. The organic modification influences the layer spacing and the compatibility to organic solvents. Layered silicates are modified with dodecylamine to enhance the spacing layer. The spacing layer is enhanced by 55% caused by the organic modification as it is commonly known. In contrast to previous work freeze drying of the organically modified layered silicates improved the particle distribution and by this barrier properties significantly. The modified particles reduce the diffusion of water and oxygen by ≈99.6% and 97.2%, respectively. The corrosive gas test of electronic circuit boards shows no growth of dendrites and no failure of the electronics in contrast to protective coating without the layered silicates.