High Power Electronic Devices Research Articles

The impact of LSM pretreatment on the growth behavior, electrical insulation and corrosion resistance properties of PEO coating on 6061 aluminum alloy

This work reported the influence of laser surface melting (LSM) pretreatment on the growth behavior, electrical insulation and corrosion resistance of plasma electrolytic oxidation (PEO) film on 6061 aluminum alloy. It is found that the LSM pretreatment refines the surface structure of original Al metal, generating defects that store excessive energy, thereby enhancing reaction kinetics and phase transition during the PEO process. By LSM pretreatment, uniform electrical discharge and film growth can be obtained, resulting in fewer defects and lower porosity in PEO layers. Additionally, a large amount of columnar crystals comprising of SiO2 phase are observed, which transformed from the SiO32− deposited on the surface, and the LSM pretreatment significantly improves the electrical insulation, corrosion resistance, and substrate adhesion of following PEO layer. Under the same PEO treatment duration, the breakdown voltage of coating increased by 100 V, and icorr decreased from 3.26 × 10−4 to 9.13 × 10−6 A cm−2. It is expected that the combination of LSM and PEO processes can not only enhance the surface properties of Al metal, but also expand the practical application of aluminum alloy in high-power electronic devices and related fields.

Construction of rGO-MXene@FeNi/epoxy composites with regular honeycomb structures for high-efficiency electromagnetic interference shielding

With the rapid development of 5G communication technology and wearable electronic devices, the demand for low-reflection electromagnetic interference (EMI) shielding materials is becoming increasingly urgent. In this work, reduced graphene oxide-MXene (rGMH) @FeNi/epoxy EMI shielding composites with a regular honeycomb structure were successfully prepared by the combination of surface functionalization modification, sacrificial template, and freeze-drying. The effects of magnetic FeNi alloy particle loading mode and loading amount on the EMI shielding performance of composites were investigated. The results show that rGMH@FeNi/epoxy EMI shielding composites have the highest EMI shielding effectiveness (EMI SE) and the lowest reflection shielding effectiveness when magnetic FeNi alloy particles are loaded only on the graphene skeleton. In this composite, the EMI SE value of the composite is 61 dB when the rGMH@FeNi mass fraction is 5.4 wt% (f-FeNi mass fraction is 0.9 wt%), which is 4.7 times that of the blended rGO/MXene/FeNi/ epoxy resin composite (13 dB) with the same mass fraction. At the same time, the rGMH@FeNi/epoxy composite has excellent thermal stability (heat-resistance index of 190.3 °C) and mechanical properties (energy storage modulus of 8606.7 MPa). These polymer-based EMI shielding composites with excellent EMI shielding properties and low reflection effectiveness have great potential in the protection of high-power, portable and wearable electronic devices against electromagnetic pollution.

Experimental study of dielectric liquid spray cooling on multi-scale structured surfaces inspired by leaf veins

Dielectric liquid spray cooling is a promising way to dissipate heat of high-power electronic devices. Surface modification is a most cost-effective method to enhance spray cooling. Inspired by leaf veins, this paper designs and fabricates macro-scale, micro- and nano- scale, and multi-scale structured surfaces for dielectric liquid spray cooling. The cooling characteristics are tested on a two-phase spray cooling system using HFE-7100. The results reveal that the heat transfer is enhanced on all the structured surfaces. Two bionic leaf vein structures, reticulated veins and parallel veins, are designed for macro-scale structured surfaces. The results show that the former one is superior to the other thanks to its better liquid distribution. For the micro- and nano- scale structured surfaces, due to the larger surface area and higher thermal conductivity, the graphene coating outperforms the carbon nanotube coating in heat transfer. Multi-scale structured surfaces, featured with leaf veins and micro- and nano- coatings, further enhance heat transfer. The heat flux increases by 116 % compared with that of the smooth surface. The evaporation efficiency reaches 60 % at the surface temperature of 80 °C. Furthermore, the effect of surface temperature on the enhancement ratio of heat transfer is analyzed, revealing various enhancement mechanisms of different scaled structured surfaces.

Printable thermal interface materials with excellent heat dissipation capability

The rapid progression of electronic devices underscores the need for thermal interface materials (TIMs) with superior heat dissipation capabilities to address the overheating issues of high-power density electronic devices. However, the importance of excellent printability in practical automated production for TIMs has often been overlooked. This study introduces poly(2-[[(butylamino)carbonyl]oxy]ethyl acrylate)/liquid metal (Poly (BCOE)/LM) composites, which exhibit excellent printability and heat dissipation properties. The resulting materials, containing 80 wt% LM, display a low total thermal resistance of 0.69 cm2 kW−1, a low contact thermal resistance of 0.25 cm2 kW−1, a high thermal conductivity of 3.49 W m−1K−1, and effective printing capabilities through material jetting 3D printing onto chip surfaces. In thermal management applications, the composite material prepared in this work was able to reduce the temperature of the chip by a further 17 °C compared to a commercial product (Laird TFlex 300), thus highlighting its practical utility in automated production processes. This novel TIM offers a viable solution for addressing the thermal management needs of modern electronic devices.

(Invited) Ga2O3 Semiconductor Devices for High-Temperature Operation

Beta phase of gallium oxide (Ga2O3) has attracted a lot of attention as an ultra-wide band gap semiconductor for applications in high-power electronic devices. High power operation often comes with increased temperatures of the devices due to joule heating, especially in semiconductors like Ga2O3with low thermal conductivity. However, electrical performance and reliability of the Ga2O3based diodes and transistors at very high temperature, above 400C, is not well established.In this talk, I will present our recent experimental results on fabrication of Ga2O3semiconductor devices for applications as high-temperature diodes and hydrogen gas sensors. The fabricated Ga2O3/NiO p-n heterojunctions allow for device operation with >100-1000 rectification ratio up to 400-600C [1]. Despite the stable ultrathin Ohmic contact [2], the device performance degrades over tens of temperature cycles and hundreds of hours at these elevated temperatures, likely due to instability of the rectifying contact. We propose and implement alternative interfacial rectifying contact layers, that enable both high performance and long reliability of these high temperature Ga2O3 semiconductor devices.[1] Sohel, Zakutayev et al Physica Status Solidi (a) 220 2300535 (2023)[2] Callahan, Zakutayev et al J. Vac. Sci. Technol. A 41, 043211 (2023)

(Invited) Advanced Electronic Characterization of Wide Band Gap Semiconductor Defects at the Nanoscale

Wide bandgap materials such as gallium nitride (GaN) and gallium oxide (Ga2O3) are currently under development for realizing next-generation high power electronic devices beyond silicon. Vertical structures produced through homoepitaxial growth are preferred for scaling high-voltage devices, which places strict demands on the quality of bulk substrates. In particular, extended defects can propagate during epitaxial growth into the active areas of devices. Therefore, there is a need for identifying defects and determining their electronic properties at relevant nano- to micro- scale dimensions in order to disentangle their combined effects on macroscopic devices. Here, we use a combination of laser-based photoemission electron microscopy (PEEM) and electrical atomic force microscopy (AFM) methodologies to investigate the local electronic properties of surface defects in epitaxially grown GaN and β-Ga2O3. PEEM is a non-scanning electron microscopy technique where photoelectrons emitted by a surface illuminated by deep-ultraviolet light are imaged with nanometer-scale spatial resolution. The emitted photoelectrons are sensitive to the local electronic structure, making PEEM a powerful tool for evaluating electronic changes at length scales relevant for devices, and provides valuable information for identifying “killer” defects which must be minimized during device growth and processing.The difficulty in producing large, low dislocation density bulk GaN substrates has led to longstanding issues with leakage current in diodes and transistor devices. We identify surface defects with different electronic properties in GaN epitaxy on different substrates using PEEM. We observe star-shaped defects on strain-patterned GaN substrates and elongated dark patches on growth ridges on ammonothermally grown GaN substrates. In both cases, the observed electronic changes in PEEM correlate directly with local electrical AFM measurements, revealing that local changes in the electronic structure at these defects results in altered electrical conduction.In contrast, the development of large bulk Ga2O3 substrates has been more successful, yet the identification and influence of various defects on device performance is still largely unknown at this point. The topography of β-Ga2O3 epitaxy varies widely between growth methods and substrate orientations. For example, β-Ga2O3 by hydride vapor physical epitaxy lacks fine structure, yet has surface defects that regularly appear in parallel orientations. In β-Ga2O3 grown on different substrate orientations, we observe variations in the surface electronic properties using PEEM. For certain substrate orientations and growths, we find nanoscale variations in doping, while other orientations display micron-scale electronic inhomogeneity and defects. Our results demonstrate that laser-based PEEM can be a powerful tool for detecting electrically active defects, as well as evaluating the nanoscale electronic homogeneity of wide bandgap semiconductors.

Microstructure and mechanical properties of high-quality AlN/Cu joints brazed by a novel AgCuTi + AlCoCrFeNi2.1 composite brazing alloy

AlN/Cu combinations offer high power electronic devices superior compatibility with large current transport and high voltage resistance, making them promising heat-dissipation candidates for electronic packaging. AlCoCrFeNi2.1 high-entropy alloy (HEA), known for its excellent mechanical properties, was incorporated into the traditional AgCuTi filler for brazing AlN and Cu in this work. The obtained AlN/Cu brazed joints exhibited homogeneous interfacial phases and high bonding strength. The maximum shear strength (277 MPa) was achieved when brazed at 850 °C for 5 min via composite filler containing 0.5 wt% AlCoCrFeNi2.1, which was 156 % higher than that brazed with single AgCuTi fillers. Enhanced mechanical properties were obtained by dispersion strengthening of intermetallic compounds (IMCs) resulting from the introduction of a medium AlCoCrFeNi2.1 concentration (less than 1 wt%) in filler alloys under tailored brazing parameters.

Development and numerical optimization of a cylindrical wire-fin-type integrated ionic wind heat sink for cooling high-power LEDs

Light-emitting diodes (LEDs) are becoming increasingly high-power and compact, which makes rotary fans incompetent in some cooling situations. The ionic wind technique can compensate for the shortcomings of rotating fans, owing to its benefits of no moving parts and compact structure. Integrating the ionic wind generator with heat dissipation fins can effectively reduce the size of LED devices, but research in this area is still insufficient. In this study, an integrated ionic wind heat sink is designed for cooling LEDs. The multi-physical characteristics of discharge, flow, and heat transfer are numerically studied. The geometric parameters’ impact degree and mechanism on the multi-physical characteristics are analyzed. The performance optimization of the integrated heat sink is realized and verified. The fin length, flow channel center angle, and relative position of the fin have a large influence on the average velocity of ionic wind. The relative position of the wire electrode determines the electric field strength distribution, and it has the greatest influence on the ionic wind performance. The emitting electrode being placed at the inlet edge of the collecting electrode produces a high ionic wind flow rate. The integrated ionic wind heat sink designed in this study exhibits an outstanding cooling performance and temperature uniformity. This device can cool down the surface of a heat source with a power of 200 W to below 91 °C and make the average heat transfer coefficient reach 18.6 W/(m2·K). This study proposes a valuable method to optimize the integrated ionic wind heat sink for cooling high-power electronic devices.

Numerical analysis of fluid flow and heat transfer characteristics in single crystal diamond microchannels with ribs and secondary channels

To meet the heat dissipation requirements of high-frequency and high-power electronic devices, single crystal diamond microchannels (SCD-MC) with secondary channels and rib combinations are proposed. The fluid flow and heat transfer characteristics in SCD-MC with various secondary channels and rectangular rib combinations are investigated through numerical simulations. The comprehensive performance and energy saving effect of the microchannel were evaluated by analyzing the factor of merit and entropy generation performance. The results show that the SCD-MC with secondary channels and rib combinations enhance fluid disturbance and increase the solid–liquid contact area, significantly improving heat transfer. When Reynolds number (Re) is 586, compared with the straight microchannel, the average temperature at the bottom of the SCD-MC with rectangular secondary channels and rectangular rib (Case 5) is reduced by 4.8 K, the heat transfer coefficient is increased by 209.8 %, and the factor of merit is improved by 89.2 %. The entropy generation augmentation number of the Case 5 microchannel was the minimum of 0.52, which has the highest energy saving effect. The factor of merit of the Case 5 microchannel exhibits a tendency to first increase and then decrease with the increase of the relative width of the secondary channel (Ψ), the relative width of the rib (Φ), and the relative position of the rib (Π). At Re = 586, Ψ = 0.933, Φ = 0.667, and Π = 0.5, the factor of merit of the Case 5 microchannel is 2.08, indicating the highest comprehensive performance. This finding provides new ideas and methods for the design and application of microchannel thermal management.

Simultaneous improvements in energy density and thermal conductivity of PAN polymer nanocomposites enabled by core-shell structure BZCT@BNNS nanofibers

If the heat generated by electronic devices in high-power applications cannot be dissipated in a timely manner, it will not only affect the use of the equipment but also reduce its service life. Therefore, there is an urgent need to develop thin films of dielectric nanocomposites with high thermal conductivity, high energy storage, and excellent flexibility and electrical insulation performance. In this study, we reported the successful preparation of BZCT nanofibers (BZCT NFs) and core-shell structures BZCT@BNNS nanofibers using electrospinning and coaxial electrospinning techniques, respectively, and there were used to composite with polyacrylonitrile (PAN) polymer matrix to prepare BZCT NFs/PAN and BZCT@BNNS/PAN dielectric nanocomposites thin film. Research has found that when the shell thickness of BNNS is 15 nm and BZCT@BNNS (15 nm) volume fraction is 20 vol%, the comprehensive performance of the dielectric nanocomposites is the best, with thermal conductivity and energy storage performance of 3.36 W m−1K−1 and 12.23 J/cm3, respectively. Therefore, the nanocomposites thin film can be used as a potential high-performance dielectric material for thermal management applications in high-power density electronic devices.

A novel coaxial heat pipe with an inner vapor tube for cooling high power electronic devices

Improving heat transfer limit of heat pipe is important for their application in high-power equipment system. Shear stress at the liquid–vapor interface affects the heat transfer capacity of heat pipe. In this study, a novel coaxial heat pipe is designed to eliminate vapor entrainment from interfacial shear stress for the first time. An inner thin-walled tube is sintered with the powder wick in the adiabatic section by one-step sintering process. The effects of filling ratio and powder size of sintered wick on the thermal performance of coaxial heat pipe are investigated experimentally. The results indicate that the optimal powder size range for the sintered wick of coaxial heat pipe is 106–125 μm, while the optimal filling ratio is about 125 %. It means that the sintered wick with 106–125 μm powder can achieve better trade-off between capillary performance and permeability. The coaxial heat pipe can operate at heat loads of 70 ∼ 140 W with the total thermal resistance less than 0.06 °C /W. Moreover, compared with the normal heat pipe, the heat transfer capacity of coaxial heat pipe is increased by 57 %, while the evaporation temperature is decreased by 9.6 ∼ 19.1 °C and the total thermal resistance is decreased by 41 %∼320 %. The inner tube can improve the replenishment efficiency of working liquid by eliminating interfacial shear stress, resulting in the significant heat transfer improvement. The design of coaxial heat pipe is an effective and low-cost solution to improve the thermal performance of heat pipe.

Tunability of the electronic structure of GaN third generation semiconductor for enhanced band gap: The influence of B concentration

To meet the demand of the future high energy, high voltage, high frequency, high temperature and high power electronic devices, the improvement of wide band gap is very significance for the applications of the third generation semiconductor material. To improve the band gap of GaN, the influence of B-doped concentration on the electronic and optical properties of GaN semiconductor is studied by the first-principles method. Four B-doped concentrations (3.125 at%, 6.25 at%, 12.5 at% and 25 at %) are investigated. The calculated results show that these B-doped GaN are thermodynamic stability because of the negative doped formation energy. In particular, the thermodynamic stability of the B-doped GaN becomes better with increasing B concentration. Importantly, the band gap follows the order of 25 at% B-doping > 12.5 at% B-doping > 6.25 at% B-doping > 3.125 at% B-doping > GaN. The band gap of 25 at% B-doped GaN increases about 70 % compared to GaN. Essentially, the B-doping induces the conduction band to move from the EF to the high energy region, which enhances the difficult of electronic transfer between the valence band and conduction band near the Fermi level. The semiconductor properties of the B-doped GaN are demonstrated by the dielectric functional. In addition, the B-doping is beneficial to improve the storage optical properties of GaN. Therefore, we believe that the B-doping can improve band gap and optical properties of GaN, which is potentially used in the high power, high voltage, low loss devices and deep ultraviolet optoelectronics.

Heat transfer augmentation in a heating surface covered by variable-shape or double-layer porous media subjected to water jet impingement

In this study, a cooling scheme for high-power and highly-integrated electronic devices is proposed in which the heating wall is covered with a variable-shape or double-layer porous medium. The porous media impacted by water jet impinging is covered over the heating surface, wherein heat from bottom wall to porous matrix is transmitted by thermal conduction and dissipated by convection generated by water jet impinging in porous layer. A combination of Brinkman–Darcy–Forchheimer model with energy equations in local thermal equilibrium is employed to describe the hydrothermal transport details in porous matrix, and the k-ε model is used to interpret water jet impinging. The impacts of porous shapes, porosity distributions, and thickness ratios among lower and upper layers with various porosities in gradient variation configuration on heat dissipation capacity are investigated numerically. The numerical calculations are well verified by published experiments. Results show that rectangular porous media covered heating surface is more sensitive to changes in jet velocity, while the mode with triangular porous media results in lower surface temperature and higher heat transfer coefficient at stagnation point. Besides, the rise ratio of heat transfer coefficient of porous configuration with gradient increase in porosity from 0.6 to 0.8 is 11.84% higher than that with gradient decrease in porosity from 0.9 to 0.6. Finally, the optimized shape, porosity arrangement and thickness ratio, jointly affect the heat transport. The results obtained can be used to generalize and apply the coupling of jet impingement with porous media above the heating surface to augment heat transfer.

Highly thermal conductivity polymer composites reinforced by BNNS/UHMWPE fabric for reliable electronic thermal protection and management

With the rapid development of 5G communication and microelectronics technology, the heat accumulation of high-power electronic devices puts forward an urgent demand for high thermal conductivity (TC) composites. However, it's still a great challenge through electrically insulating polymer to achieve good comprehensive performance of high TC, flexibility, and safety reliability. Herein, ultra-high molecular weight polyethylene (UHMWPE) fabric was coated with boron nitride nanosheets (BNNS) by dispersion and interfacial reinforcement of cellulose nanofibers (CNFs), and the BNNS/UHMWPE fabric-reinforced polymer composite (B/UF-PC) with 3D continuous thermal pathway was obtained by further composite with polydimethylsiloxane (PDMS). The continuous thermal pathways of highly aligned UHMWPE fibers in the fabric and the synergistic effect of the BNNS network enhance the out-of-plane and in-plane TC to 6.02 and 11.78 W/m K, respectively. Moreover, B/UF-PC exhibits flexible, lightweight (0.89 g/cm3), and significantly higher tensile strength (87.40 MPa) and energy absorption efficiency (98 %) than those of polymer composites, which allows it to be used in reliable electronic thermal management to prevent heat accumulation and external mechanical impact. This work provides a strategy for efficiently preparing flexible polymer composites with high TC and insulation properties.

Inhibiting Leidenfrost phenomenon with granulated polymer film

Inhibiting Leidenfrost phenomenon has been conventionally mediated by texturing materials to facilitate the solid-liquid contact or by arranging vapor channels to promote vapor evacuation. However, it remains challenging to break the trade-off between the high Leidenfrost point and the high heat transfer efficiency because elevating Leidenfrost point is often accompanied by the increase of thermal resistance. We propose a method using Rayleigh-Bénard-Marangoni convection and non-solvent induced phase separation to create granulated matrices that prevent the Leidenfrost effect at temperatures up to 400 °C. These matrices offer strong capillary adhesion, ensuring water droplets remain pinned and provide effective cooling. Additionally, the unique bubble dynamics prevent film boiling and Leidenfrost levitation. The matrices are mechanically robust and thermally stable, making them suitable for cooling high-power electronic devices at high temperatures. These results highlight the potential of using polymer matrices for cooling devices at elevated temperatures, potentially advancing cooling technologies.

Towards void-free copper filling of low-aspect-ratio heat dissipation through holes in packaging substrate with high H2SO4 concentration electroplating system

The void-free filling of high-density low aspect ratio (AR≤5) through holes (THs) in the packaging substrate is beneficial for promoting the integration, reliability, and heat dissipation efficiency of high-power electronic devices. It is a challenge to fill the low ARs THs compactly in direct current (DC) electroplating. The copper filling process relies heavily on the additives’ complex interactions and multiple process parameters. Herein, an ideal convection-sensitive electroplating solution formula — 2.34 M H2SO4, 0.24 M Cu2SO4·5H2O, 30 mg/L Cl−, 9 mg/L SH110, 5 mg/L NTBC, and 200 mg/L PEG — that was appropriate for low ARs THs filling was provided by investigate the electrochemical characteristics of additives. The critical electroplating parameters were optimized by thoroughly examining their influence on filling process, including current density 1.5 ASD, solution flow rate 2.2 L/min, and temperature 25 °C. The process window was enlarged apparently by the combination of optimal parameters for simultaneous void-free filling of THs with a large AR range of 0.95–5, dense crystal structure, and high layer quality could be achieved. Subsequently, the low ARs THs array filled by the optimized technology was implemented in the packaging substrate as the heat dissipation channel, which significantly promoted the heat dissipation efficiency.

Scalable Compliant Graphene Fiber-Based Thermal Interface Material with Metal-Level Thermal Conductivity via Dual-Field Synergistic Alignment Engineering.

High-performance thermal interface materials (TIMs) are highly desired for high-power electronic devices to accelerate heat dissipation. However, the inherent trade-off conflict between achieving high thermal conductivity and excellent compliance of filler-enhanced TIMs results in the unsatisfactory interfacial heat transfer efficiency of existing TIM solutions. Here, we report the graphene fiber (GF)-based elastic TIM with metal-level thermal conductivity via mechanical-electric dual-field synergistic alignment engineering. Compared with state-of-the-art carbon fiber (CF), GF features both superb high thermal conductivity of ∼1200 W m-1 K-1 and outstanding flexibility. Under dual-field synergistic alignment regulation, GFs are vertically aligned with excellent orientation (0.88) and high array density (33.5 mg cm-2), forming continuous thermally conductive pathways. Even at a low filler content of ∼17 wt %, GF-based TIM demonstrates extraordinarily high through-plane thermal conductivity of up to 82.4 W m-1 K-1, exceeding most CF-based TIMs and even comparable to commonly used soft indium foil. Benefiting from the low stiffness of GF, GF-based TIM shows a lower compressive modulus down to 0.57 MPa, an excellent resilience rate of 95% after compressive cycles, and diminished contact thermal resistance as low as 7.4 K mm2 W-1. Our results provide a superb paradigm for the directed assembly of thermally conductive and flexible GFs to achieve scalable and high-performance TIMs, overcoming the long-standing bottleneck of mechanical-thermal mismatch in TIM design.

Simultaneous Measurement of Thermal Conductivity and Volumetric Heat Capacity of Thermal Interface Materials Using Thermoreflectance.

Thermal interface materials are crucial to minimize the thermal resistance between a semiconductor device and a heat sink, especially for high-power electronic devices, which are susceptible to self-heating-induced failures. The effectiveness of these interface materials depends on their low thermal contact resistance coupled with high thermal conductivity. Various characterization techniques are used to determine the thermal properties of the thermal interface materials. However, their bulk or free-standing thermal properties are typically assessed rather than their thermal performance when applied as a thin layer in real application. In this study, we introduce a low-frequency range frequency domain thermoreflectance method that can measure the effective thermal conductivity and volumetric heat capacity of thermal interface materials simultaneously in situ, illustrated on silver-filled thermal interface material samples, offering a distinct advantage over traditional techniques such as ASTM D5470. Monte Carlo fitting is used to quantify the thermal conductivities and heat capacities and their uncertainties, which are compared to a more efficient least-squares method.

Creep Deformation and Rupture Life Characteristics of High-Purity Aluminum for High-Power Electronic Devices

Creep Deformation and Rupture Life Characteristics of High-Purity Aluminum for High-Power Electronic Devices

2D Materials-Based Thermal Interface Materials: Structure, Properties, and Applications.

The challenges associated with heat dissipation in high-power electronic devices used in communication, new energy, and aerospace equipment have spurred an urgent need for high-performance thermal interface materials (TIMs) to establish efficient heat transfer pathways from the heater (chip) to heat sinks. Recently, emerging 2D materials, such as graphene and boron nitride, renowned for their ultrahigh basal-plane thermal conductivity and the capacity to facilitate cross-scale, multi-morphic structural design, have found widespread use as thermal fillers in the production of high-performance TIMs. To deepen the understanding of 2D material-based TIMs, this review focuses primarily on graphene and boron nitride-based TIMs, exploring their structures, properties, and applications. Building on this foundation, the developmental history of these TIMs is emphasized and a detailed analysis of critical challenges and potential solutions is provided. Additionally, the preparation and application of some other novel 2D materials-based TIMs are briefly introduced, aiming to offer constructive guidance for the future development of high-performance TIMs.