The recent surge in artificial intelligence has escalated the demand for computing performance and storage capability in information processing hardware. However, in traditional von Neumann architecture, the processing and memory units are connected by a bus with limited bandwidth, which leads to excessive time and power consumption in data transfer. To address this issue, the emerging neuromorphic architecture co-locates the memory and processing functionalities by mimicking the information processing akin to the human brain. The inefficiency of traditional technology in neuromorphic hardware has led to extensive interest in novel memristive devices. The two-dimensional (2D) transition metal dichalcogenides (TMDCs) exhibit appealing characteristics for memristive devices, including tunable bandgap, high mobility at atomic thickness, and the rich possibility of defect engineering. This review focuses on the switching mechanisms of memristive devices based on 2D TMDCs. Additionally, properties and performances of 2D TMDCs-based memristive devices are also summarized in this review with respect to different switching mechanisms.
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