Abstract

Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color centers are best defined. We model triangular cross-section waveguides and photonic crystal cavities using Finite-Difference Time-Domain and Finite-Difference Eigensolver approaches. We analyze optimal color center positioning within the modes of these devices and provide estimates on achievable Purcell enhancement in nanocavities with applications in quantum communications. Using open quantum system modeling, we explore emitter-cavity interactions of multiple non-identical color centers coupled to both a single cavity and a photonic crystal molecule in SiC. We observe polariton and subradiant state formation in the cavity-protected regime of cavity quantum electrodynamics applicable in quantum simulation.

Highlights

  • Color center photonics has been on the rise in explorations of quantum information processing

  • Commercial scale high quality crystalline silicon carbide (SiC) wafers grown using homoepitaxy (MBE, CVD) or sublimation have transferred into color center research, for example by in situ doping of vanadium centers in 4H-SiC [33], this approach does not provide an undercutting layer needed to generate freestanding photonic devices

  • Using Lumerical MODE and FDTD software packages, we examine the TE and TM polarized modes in the near infrared (NIR) part of the spectrum supported in triangular waveguides with variable etch-angles, characterizing their effective index of refraction and the depth of the mode maximum

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Summary

Introduction

Color center photonics has been on the rise in explorations of quantum information processing. The negatively charged nitrogen vacancy in diamond was explored as a It has been well studied in atomic [28] and quantum dot [29, 30] systems that optical resonators enhance emitter properties, from Purcell emission enhancement and coupling to a desired mode to polariton physics and cavity Quantum Electrodynamics (cQED). These substrate limitations have been circumvented via photo-electrochemical etching [36] and SiC thinning and bonding to an insulator [37] While these approaches successfully integrated and manipulated color centers in a nanocavity, the fabrication processes have been limited in terms of either type or size of the substrate, requiring a specific doping profile or a limited chip area. Using open quantum system modeling, we explore emitter-cavity interactions of multiple non-identical color centers coupled to both a single cavity and a photonic crystal molecule, observing polariton and subradiant states formation

SiC color center emission properties
Triangular cross-section SiC waveguide
Triangular cross-section SiC photonic crystal cavity
Multi-emitter cavity QED in SiC photonic devices
Discussion
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