Good Endurance Properties Research Articles

Microcontact Printing of Ultrahigh Density Gold Nanoparticle Monolayer for Flexible Flash Memories

A uniform monolayer of alkanethiol-protected gold nanoparticle arrays with ultrahigh density have been used as microcontact-printable charge-trapping layers for the application in flexible flash memories. The new devices are compared to two reference devices with a floating gate created by thermal evaporation and electrostatic self-assembly, and show a large memory window, long retention times and good endurance properties.

Effect of redox proteins on the behavior of non-volatile memory

We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (~11 V) and relatively good endurance properties (~over 100 cycles).

Organic Nonvolatile Memory Based on Low Voltage Organic Thin Film Transistors with Polymer Gate Electrets

We demonstrate a simple and an inexpensive approach for the low-temperature fabrication of low-voltage-operated , organic, pentacene-based, nonvolatile memory devices with a high- hafnium dioxide main dielectric layer and a polymer electret layer. Two kinds of polymer insulators were used as the electret layer, i.e., a poly(vinylalcohol) (PVA) with strong polar groups and an amorphous poly(methyl methacrylate) (PMMA). We studied the memory characteristics of the corresponding devices, including writing and erasing process, long-term retention, and multiple continuous writing/erasing cycles’ endurance testing. The memory windows in devices with PVA can be attributed to the dominant short-lifetime shallow traps located at the PVA/pentacene interface and in the pentacene film, whereas those in devices with PMMA are mainly due to the long-lifetime deep traps located in the PMMA layer. The possible sources of shallow-type and deep-type traps in the memory devices were discussed. Accordingly, the devices with the PMMA layer show superior memory characteristics, including a stable memory window of approximately after pulse, retaining 80% of memory windows after and a good endurance properties.

Improved charge storage characteristics of the tetralayer non-volatile memory structure using nickel nanocrystal trapping layer

Metal-oxide-semiconductor capacitors with a tetralayer structure consisting of nickel nanocrystals sandwiched between SiO2 and HfO2 tunnel and Al2O3 cap oxides were fabricated on p-Si substrates. Cross-sectional transmission electron micrographs revealed the formation of nickel nanocrystals having size 5–7 nm. The maximum charge injection capability (ΔVFB ∼ 7.8 V; @ ± 15 V) of nanocrystals was observed for the device RTA annealed at 950 °C for a minute. Charge storage and leakage current characteristics of the nanocrystal memory structures were studied through capacitance–voltage and current–voltage measurements, respectively. The improved retention properties with good thermal stability and endurance properties were also studied.

Thermal Endurance, Electrical Insulating, and Mechanical Properties of Hybrid Made with Poly(dimethylsiloxane) and Tetraethoxysilane

In this paper we present the heat-resisting properties of a hybrid made from poly(dimethylsiloxane) (PDMS) and tetraethoxysilane (TEOS) through a sol–gel reaction. It is found that the hybrid with ratio TEOS/PDMS = 10 shows a weight loss of less than 3% after aging treatment at 200 °C for 480 h in air. The reason for the good thermal endurance property is that low-molecular-weight PDMS chains bond to the surfaces of silica derived from TEOS, leading to the suppression of the thermal decomposition of the chains. After the aging treatment, the mechanical properties of the elastic modulus and breaking stress are improved and elongation at breaking decreases. It is also found that the electrical insulating properties are stable upon aging treatment.

Embedded TFT nand-Type Nonvolatile Memory in Panel

A new NAND-type nonvolatile memory with a field-enhancing tip structure embedded in low-temperature polycrystalline silicon (LTPS) panel was demonstrated on a glass substrate for the first time. A thin-film transistor (TFT) metal-oxide-nitride-oxide-silicon (MONOS) device based on sequential lateral solidification crystallization with a fully depleted poly-Si channel, an oxide-nitride-oxide stack gate dielectric, and a metal gate is integrated into a NAND array. A NAND test array based on p-channel LTPS TFTs exhibits good cycling endurance and data retention properties and negligible program and read disturbance. These results strongly support the claim that this TFT-MONOS device is a promising candidate for use in embedded nonvolatile memory for system-on-panel and 3-D IC applications

A bulk metal/ceramic composite material with a cellular structure

A bulk metal/ceramic composite material with a honeycomb-like micro-cell structure has been prepared by sintering the spherical Al90Mn9Ce1 alloy powders clad by Al2O3 nano-powder with the spark plasma sintering (SPS) technique. The as-prepared material consists of Al90Mn9Ce1 alloy cell and closed Al2O3 ceramic cell wall. The diameter of the cells is about 20–40 μm, while a thickness of the cell wall is about 1–2 μm. The ultimate compressive strength of the as-sintered materials is about 514 MPa, while its fracture strain is up to about 0.65 %. This composite material might possess good anti-corrosion, thermal endurance and other potential properties due to its unique microstructure. The result shows that the Al90Mn9Ce1/Al2O3 composite powders can be sintered by spark plasma sintering technique despite the large difference in their sintering temperature. This work offers a way of designing and preparing metal/ceramic composite material with functional property.

Chemical processing and characterization of ferroelectric thin films of bismuth-based layer-structured perovsktte cabi4ti4o15 with the octahedron number of 4

CaBi4Ti4O15 (CBTi144) thin films were prepared by spin-coating a precursor solution of metal alkoxides. As-deposited thin films began crystallization below 550°C and reached full crystallinity of a single phase of layered-perovskite at 650°C via rapid thermal annealing in oxygen. 650°C-annealed CBTi144 thin film showed random orientation and had a columnar structure on Pt-passivated Si substrate. The dielectric constant and loss factor were 300 and 0.033, respectively, at 100 kHz. The thin film exhibited P-E hysteresis loops. The remanent polarization (Pr) and coercive electric field (Ec) were 6.0 μC/cm2 and 78.7 kV/cm, respectively, at 9 V. The thin film showed good endurance properties against number of switching cycles.