GaN Films Research Articles

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

GaN epitaxial films were grown on Si substrates by ex situ two-step method combining the technologies of pulsed laser deposition (PLD) and metal organic chemical vapor deposition (MOCVD). The N/Al ratio of high-temperature AlN (HT-AlN) buffer layer was optimized, and its influence on the HT-AlN growth mode as well as the quality of GaN epitaxial films was investigated. When the N/Al ratio was 500, the two-dimensional growth of HT-AlN was greatly enhanced, and it obtained a coalesced and smooth surface with the minimum RMS surface roughness as 1.63 nm. The as-grown GaN epitaxial film had the best crystalline quality with the minimum full-width at half maximums of GaN(0002) and GaN(10 1¯ 2) as 0.14° and 0.22°, respectively. Owing to the high energy of PLD, the ex situ low-temperature AlN template had an abrupt Si/AlN interface and flat surface, which was of significance to improve the quality of HT-AlN buffer and GaN film.

Epitaxial growth of GaN on β-Ga2O3 via RF plasma nitridation

The lack of suitable p-type dopant for β-Ga2O3 remains a hurdle for vertical power device applications. Epitaxy of GaN on Ga2O3 substrates was demonstrated as an alternative. (–201)-oriented β-Ga2O3 was converted into (0001)-oriented hexagonal GaN via nitrogen plasma in a plasma-assisted molecular beam epitaxy chamber, as verified by XRD and RHEED. The resulting nitridated GaN layers were characterized by TEM, x-ray reflectivity, and AFM to relate the nitridation conditions to crystallinity, layer thickness, and surface roughness. The crystallinity of subsequently grown epitaxial GaN films was quantified via XRD rocking curves and related to the nitridation layer properties across varying nitridation conditions. Specifically, the effect of the grain size and nitridation layer thickness was investigated to determine their role in threading screw dislocation management.

Relation of V/III ratio of AlN interlayer with the polarity of nitride

Abstract N-polar GaN film was obtained by using a high-temperature AlN buffer layer. It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same V/III ratio as that of the high-temperature AlN layer. Continuing to increase the V/III ratio of the low-temperature AlN interlayer, the Ga-polarity of GaN film was inverted to N-polarity again but the crystal quality and surface roughness of GaN film greatly deteriorated. Finally, we analyzed the chemical environment of the AlN layer by x-ray photoelectron spectroscopy (XPS), which provides a new direction for the control of GaN polarity.

Direct Growth of Wafer-Scale Self-Separated GaN on Reusable 2D Material Substrates.

Free-standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates. In this work, 2-inch free-standing GaN films are obtained by direct growth on a fluoro phlogopite mica by hydride vapor-phase epitaxy. Depending on the van der Waals (vdW) interaction between GaN and mica, the effect of the significant lattice mismatch is effectively reduced; thus, enabling the production of a high-quality wafer-scale GaN film on mica. The vdW-induced cracks at GaN-mica interface are found to be initiated near the interface so that GaN can easily separate from mica during rapid cooling. Owing to the hydrophilic nature of mica, the residual GaN on the mica can be lifted off by following deionized water treatment, and the mica substrate can be repeatedly used to grow free-standing GaN films. The self-separated GaN films grown on both pristine and used mica substrates are single crystallinity and strain-free. Additionally, a fully functional ultraviolet light-emitting diode is demonstrated to show that the self-separated GaN films are of device quality. The proposed approach achieves epitaxial growth of wafer-scale single-crystalline GaN on 2D materials and provides a new substrate option in the technology of III-V materials.

Graphene-assisted remote epitaxy wrinkle-free GaN films on flexible mica

When GaN films were directly deposited onto fluorophlogopite mica substrates, spontaneous wrinkling was frequently observed in GaN films. Because of the non-uniform interface adhesion between GaN and mica, two types of delamination phenomena have been observed by scanning electron microscopy. The maximum thickness of wrinkle-free GaN films on mica substrates was ∼200 nm. Interface pinning effect occurred due to the dangling bonds caused by the damage to mica during the deposition of GaN films. To avoid the formation of dangling bonds, the surface of mica was shielded by a graphene interlayer which was transferred via a wet method. Wrinkles were eradicated after the formation of sliding contact between GaN films and fully graphene-covered mica substrates. Despite the presence of the graphene lattice, the growth of GaN epilayer remained governed by the potential field of mica, indicating that remote epitaxy occurred on a 2D mica support substrate.

A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering

GaN, a third-generation semiconductor, has gained widespread attention owing to its high temperature resistance, wide bandgap, and high critical breakdown electric fields. Magnetron sputtering has a broad potential in the field of low-cost growth of GaN on account of high efficiency, superior quality, and convenient operation. However, challenges caused from the pure Ga targets with a huge refrigeration system need to be resolved for wide practices. Here, a new and cost-effective Ga target for magnetron sputtering was fabricated by utilizing the wetting properties of CuGa2 and Ga. Mixed microcrystalline and amorphous GaN films were obtained via reactive magnetron sputtering employing the Ga target. The average deposition rate is about 1.68 nm/min, and the average roughness is ∼7.45 ± 0.26 nm under 100 W of sputtering power. In addition, the sputtered GaN films were found to be wide-bandgap and p-type semiconductors with high transmittance, as revealed by x-ray photoelectron spectroscopy and absorption spectra. The GaN films display a bandgap of ∼3.60 eV and a transmittance exceeding 88.5% in the visible range. Furthermore, field-effect transistors and metal–semiconductor–metal photodetectors have been fabricated using the obtained GaN films, demonstrating favorable response characteristics. The prospects of microcrystalline/amorphous GaN films in sensing, power devices, and flexible electronics were forecasted. Overall, a low-cost and pervasive route of target fabrication process expands the possibilities of using low melting point metals in magnetron sputtering.

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical vapor deposition, and their basic properties and dislocation evolution characteristics were investigated thoroughly. With the insertion of a 100 nm thin AlGaN buffer layer, bow–warp analysis of the epitaxial wafers revealed excellent stress control for both the 6- and 8-inch wafers. HR-XRD and AFM analyses validated the high crystal quality and step-flow growth mode of GaN. Further, Hall measurements demonstrated the superior transport performance of AlGaN/GaN heterostructures. It is worth noting that dislocations tended to annihilate in the AlN nucleation layer, the thin AlGaN buffer layer, and the GaN buffer layer in the initial thickness range of 200–300 nm, which was indicated by ADF-STEM. To be specific, the heterointerfaces exhibited a significant effect on the annihilation of c-type (b = <0001>) dislocations, which led to the formation of dislocation loops. The thin inserted layers within the AlGaN buffer layer played a key role in promoting the annihilation of c-type dislocations, while they exerted less influence on a-type (b = 1/3<112¯0>) and (a+c)-type (b = 1/3<112¯3>) dislocations. Within an initial thickness of 200–300 nm in the GaN buffer layer, a-type and (a+c)-type dislocations underwent strong interactions, leading to considerable dislocation annihilation. In addition, the EELS results suggested that the V-shaped pits in the AlN nucleation layer were filled with the AlGaN thin layer with a low Al content.

Realization of N-polarity GaN films on graphene/SiC substrates by interfacial atomic manipulation

Growth of N-polarity GaN on a two-dimensional (2D) material is of significance for the development of high-performance nitride devices such as red light-emitting diodes. However, the realization of N-polarity GaN on a 2D material is a challenge. In this work, we successfully achieve N-polarity GaN on graphene/SiC substrates through interfacial atomic manipulation. Our results show that the growth conditions of the AlN buffer play an important role in the lattice polarity of nitride film grown on 2D graphene. A low growth temperature of AlN buffer leads to a metal-polarity nitride film, while a high growth temperature of it leads to a mix-polarity nitride film. The underlying mechanism is revealed by first-principles calculations. Under the guidance of the calculations results, the preflow of trimethylaluminum source is introduced prior to the high-temperature AlN buffer growth to manipulate the interfacial atoms between the AlN buffer and graphene/SiC. With this method, we successfully realize the fabrication of N-polarity GaN on graphene/SiC by metalorganic chemical vapor deposition. This work provides a new route for the development of high-performance N-polarity nitride devices on graphene/SiC substrates.

Synthesis of nano-diamond film on GaN surface with low thermal boundary resistance and high thermal conductivity

Joule self-heating is the main obstacle limiting the performance of GaN power devices. A nano-diamond (NCD) film for near-junction heat transfer has been approved as an effective approach to overcome this issue. In the present study, we developed a scheme to deposit a smooth NCD film with high thermal conductivity (TC) over the surface of GaN. First, a 10-nm Si3N4 was deposited as the protective layer of GaN, followed by electrostatic seeding to improve nucleation density and particle distribution uniformity. Second, argon and gradient methane gas were introduced to prepare the NCD film based on nucleation and the growth period. The resulting thickness of the NCD film was 150 nm with a roughness of about 20 nm. The thermal boundary resistance (TBReff) between GaN and NCD film was only 12.8 ± 0.64 m2K/GW, whereas the TC of the NCD film was 200 ± 40 W m−1 K−1, which was similar to the theoretical prediction. Thus, it could be inferred that the high crystallinity of the NCD film contributes to the low TBReff and high TC through the whole NCD layer.

Effect of plasma discharge pulse length for GaN film crystallinity on sapphire substrate by high density convergent plasma sputtering device

Effect of plasma discharge pulse length for GaN film crystallinity on sapphire substrate by high density convergent plasma sputtering device

Wafer-scale bonded GaN–AlN with high interface thermal conductance

Wide and ultrawide bandgap semiconductors, such as GaN, play a crucial role in high-power applications, yet their performance is often constrained by thermal management challenges. In this work, we introduce a high-quality interface between GaN and AlN, prepared through wafer-scale bonding and verified via high-resolution transmission electron microscopy and transport experiments. We experimentally measured the thermal boundary conductance of the GaN–AlN interface, achieving up to 320 MW/m2K at room temperature using an ultrafast optical technique and sensitivity examinations. Non-equilibrium atomistic Green's functions and density functional theory simulations were conducted to model the interface phonon modes and their contributions to thermal transport, demonstrating good agreement with the experimental results from 80 to 300 K. Additionally, we observed a size-dependent effect on the thermal boundary conductance related to the GaN film thickness from 180 to 450 nm, which we attributed to quasi-ballistic thermal transport through molecular dynamics simulations. Our study has demonstrated a scalable processing route for wafer-sized chip packaging and provides fundamental insights to mitigate near-junction thermal resistance. Further exploration of interface engineering could facilitate co-design strategies to advanced thermal management technologies.

First Principles Study of Europium doped Gallium Nitride in Wurzite Structure

In the present work, we have successfully deposited Sb antimony doped tin dioxide (SnO2) thin films with Several advantages over well known LCD's including increased brightness and viewing angle. We are currently investigating Eu doped GaN as a potential red phosphor for TEFL display applications. Eu doped GaN films were grown by solid source molecular beam epitaxy on Si (111) substates. The material was optically characterized through temperature dependent emission spectroscopy using a He-Cd laser at 325 nm for above band gap excitation. A strong red emission was obtained at 622 nm, which corresponds to an Eu3+ inner 4f-shell transition from the 5D 0 to 7F2 state. Therefore, the observed thermal quenching of red Eu emission is assigned to a strongly temperature dependent pumping process.

Exploring the mechanism of gallium nitride surface quality enhancement by green organic additives in chemical mechanical polishing

This study presents a novel approach using colloidal silica and organic salt additives for ultra-precision processing of GaN films. The chemical mechanical polishing (CMP) process significantly reduced the surface roughness (Sq) to a minimum of 0.63 nm, while improving the material removal rate by 60 % (from 70 nm/h to 112 nm/h). Contact angle experiments confirmed enhanced slurry wettability due to the organic salts, reducing the contact angle between the polishing slurry and GaN surface from 20° to less than 10°. Additionally, X-ray photoelectron spectroscopy (XPS) and quantum chemical calculations explained the inhibition of the oxide layer through adsorption energy. These insights contribute to optimizing GaN CMP processes for fabricating high-performance GaN devices.

The enhanced GaN deposition on highly N-incorporated diamond substrate

As typical impurities in diamonds, the incorporated nitrogen (N) atoms could alleviate the wetting issues of GaN deposition on diamonds. Therefore, GaN was deposited on the N-incorporated diamond substrate. Through X-ray diffraction (XRD) characterization, the enhanced AlN was observed on the highly-N incorporated diamond substrate. Moreover, GaN morphology on N-incorporated diamond was greatly enhanced, showcasing superior film quality, which would be further confirmed by the Raman and photoluminescence spectra. Notably, high-resolution XRD characterization unveiled a much narrower rocking curve for GaN films on N-incorporated diamond substrates, with a full width at half maximum of 2714 arcsec, compared to 7560 arcsec on N-free diamond substrates. In conclusion, utilizing N-incorporated diamond substrates is a practical approach for GaN-on-diamond deposition.

III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers.

Group III-nitride semiconductors have been subject of intensive research, resulting in the maturing of the material system and adoption of III-nitrides in modern optoelectronics and power electronic devices. Defined film polarity is an important aspect of III-nitride epitaxy as the polarity affects the design of electronic devices. Magnetron sputtering is a novel approach for cost-effective epitaxy of III-nitrides nearing the technological maturity needed for device production; therefore, control of film polarity is an important technological milestone. In this study, we show the impact of Al seeding on the AlN/Si interface and resulting changes in crystal quality, film morphology, and polarity of GaN/AlN stacks grown by magnetron sputter epitaxy. X-ray diffraction measurements demonstrate the improvement of the crystal quality of the AlN and subsequently the GaN film by the Al seeding. Nanoscale structural and chemical investigations using scanning transmission electron microscopy reveal the inversion of the AlN film polarity. It is proposed that N-polar growth induced by Al seeding is related to the formation of a polycrystalline oxygen-rich AlN interlayer partially capped by an atomically thin Si-rich layer at the AlN/Si interface. Complementary aqueous KOH etch studies of GaN/AlN stacks demonstrate that purely metal-polar and N-polar layers can be grown on a macroscopic scale by controlling the amount of Al seeding.

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy.

GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180-1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman-PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Liquid phase epitaxy of GaN films on sapphire substrates under an atmospheric pressure nitrogen ambience

GaN films were grown on sapphire substrates using liquid phase epitaxy under an atmospheric pressure nitrogen ambience, employing molten Ga and Fe3N as a source mixture. Single-crystal GaN (0001) films were successfully grown on sapphire (0001) substrates within a growth temperature (T g) range of 750 °C–900 °C. When varying the Fe3N concentration in the range of 0.05–3 mol%, lower iron nitride resulted in high crystallinity of GaN (0001) films. The incorporation of iron atoms in GaN can negatively impact crystal quality. Parameterizing T g at a concentration of 0.1 mol% Fe3N showed that higher T g led to a reduction in the peak width of GaN (0002) X-ray rocking curves. However, at 3 mol%, elevating T g resulted in the degradation of the crystallinity of GaN. This degradation may be attributed to the increased solubility of iron atoms in GaN with increasing T g.

Optimization of high-quality gallium nitride thin films deposited on silicon substrates with an aluminum nitride buffer layer through radio-frequency magnetron sputtering

In this study, high-quality GaN thin films were deposited on Si (111) substrates with an AlN buffer layer through radio-frequency (RF) magnetron sputtering. The sputtering parameters for the AlN buffer layer were optimized to enable subsequent high-quality GaN deposition. GaN thin films with a thickness of 300 nm were deposited in situ by using Ga metal as the sputtering target with N2 gas for performing reactive sputtering at a temperature of 600 °C and an RF power of 350 W. X-ray diffraction analysis confirmed the presence of a crystalline phase in the (002) plane at 2θ = 34.5° for the sputtered GaN thin films. Photoluminescence spectroscopy conducted at 100 K revealed that the GaN thin film had an emission peak at 3.37 eV (367 nm). The results of transmission electron microscopy and X-ray photoelectron spectroscopy verified that high-quality GaN thin films were formed over AlN buffer layers. The findings of this study suggest that RF-sputtered GaN films on Si substrates can be applied in electronic and optoelectronic devices.

Synthesis and Structure of Thin GaN Films by Radio-Frequency Sputtering

Synthesis and Structure of Thin GaN Films by Radio-Frequency Sputtering

Effect of gas pre-decomposition device on the growth of GaN epitaxial layer

In previous studies, the influence of gas phase and surface reactions on the growth of GaN was mainly calculated through simulations. In this study, a novel gas pre-decomposition device (GPDD) was designed to experimentally investigate the effects of gas phase and surface reactions on GaN growth by changing the length and height of the isolation plates (IPs). By varying the structure of the GPDD, the effects on the growth rate and thickness uniformity of the GaN films were studied. The growth rate of the GaN sample slowed with the extension of the IPs because the longer partition plates led to insufficient gas mixing and premature consumption of the precursor trimethylgallium (TMG). The use of GPDD simultaneously achieves high crystal quality and smooth surface morphology of the GaN film. Owing to the use of GPDD, the decomposition of TMG in the pyrolysis pathway was promoted, which suppressed Ga vacancies and C impurities, resulting in weak yellow luminescence bands in the photoluminescence. This study provides a comprehensive understanding of the chemical reaction mechanism of GaN and plays an important role in promoting the development of metal-organic chemical vapor deposition equipment.