Graphene-assisted remote epitaxy wrinkle-free GaN films on flexible mica

Abstract

When GaN films were directly deposited onto fluorophlogopite mica substrates, spontaneous wrinkling was frequently observed in GaN films. Because of the non-uniform interface adhesion between GaN and mica, two types of delamination phenomena have been observed by scanning electron microscopy. The maximum thickness of wrinkle-free GaN films on mica substrates was ∼200 nm. Interface pinning effect occurred due to the dangling bonds caused by the damage to mica during the deposition of GaN films. To avoid the formation of dangling bonds, the surface of mica was shielded by a graphene interlayer which was transferred via a wet method. Wrinkles were eradicated after the formation of sliding contact between GaN films and fully graphene-covered mica substrates. Despite the presence of the graphene lattice, the growth of GaN epilayer remained governed by the potential field of mica, indicating that remote epitaxy occurred on a 2D mica support substrate.