Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Abstract

GaN epitaxial films were grown on Si substrates by ex situ two-step method combining the technologies of pulsed laser deposition (PLD) and metal organic chemical vapor deposition (MOCVD). The N/Al ratio of high-temperature AlN (HT-AlN) buffer layer was optimized, and its influence on the HT-AlN growth mode as well as the quality of GaN epitaxial films was investigated. When the N/Al ratio was 500, the two-dimensional growth of HT-AlN was greatly enhanced, and it obtained a coalesced and smooth surface with the minimum RMS surface roughness as 1.63 nm. The as-grown GaN epitaxial film had the best crystalline quality with the minimum full-width at half maximums of GaN(0002) and GaN(10 1¯ 2) as 0.14° and 0.22°, respectively. Owing to the high energy of PLD, the ex situ low-temperature AlN template had an abrupt Si/AlN interface and flat surface, which was of significance to improve the quality of HT-AlN buffer and GaN film.