Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers

Abstract

We report on polarity of GaN films grown on sapphire substrates by molecular beam epitaxy using different buffer layers and growth conditions. On high temperature AlN or GaN buffer layers, the GaN films typically show Ga or N-polarity, respectively. When low temperature (either AlN or GaN) buffer layers are employed, GaN films of both polarities can be grown, but these films have high density of inversion domains. Insertion of additional GaN/AlN quantum dot layers between the buffer layers and the GaN films provides strain relief and a significant improvement in the quality of the GaN epilayers.