Abstract
This study presents a novel approach using colloidal silica and organic salt additives for ultra-precision processing of GaN films. The chemical mechanical polishing (CMP) process significantly reduced the surface roughness (Sq) to a minimum of 0.63 nm, while improving the material removal rate by 60 % (from 70 nm/h to 112 nm/h). Contact angle experiments confirmed enhanced slurry wettability due to the organic salts, reducing the contact angle between the polishing slurry and GaN surface from 20° to less than 10°. Additionally, X-ray photoelectron spectroscopy (XPS) and quantum chemical calculations explained the inhibition of the oxide layer through adsorption energy. These insights contribute to optimizing GaN CMP processes for fabricating high-performance GaN devices.
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