Free Carrier Density Research Articles

Microscopic mechanism of displacive excitation of coherent phonons in a bulk Rashba semiconductor

Changing the macroscopic properties of quantum materials by optically activating collective lattice excitations has recently become a major trend in solid state physics. One of the most commonly employed light-matter interaction routes is the displacive mechanism. However, the fundamental contribution to this process remains elusive, as the effects of free-carrier density modification and raised effective electronic temperature have not been disentangled yet. Here we use time-resolved pump-probe spectroscopy to address this issue in the Rashba semiconductor BiTeI. Exploring the conventional regime of electronic interband transitions for different excitation wavelengths as well as the barely accessed regime of electronic intraband transitions, we answer this question regarding the displacive mechanism: the lattice modes are predominantly driven by the rise of the effective electronic temperature. In the intraband regime, which allows an increase of the effective carrier temperature while leaving the carrier density unaffected, the phonon coherence time does not display significant fluence-dependent variations. Our results thus reveal a pathway to displacive excitation of coherent phonons, free from additional scattering and dissipation mechanisms typically associated with an increase of the free-carrier density. Published by the American Physical Society 2025

Improved absorption of phosphates through interface junctions and photothermal–energy–storage capability of Ca(OH)2–[Co3O4–Co3(PO4)2]

Strong absorption in the full solar spectrum is required for efficient usage of solar energy. Near-infrared (NIR) light absorption mainly depends on surface plasmon resonance and a high density of free charge carriers (FCCs). However, increasing FCC density in semiconductors is still a challenge. In this work, we demonstrated that multitudinous S-scheme interface junctions can be constructed within nanoscale Co3O4–Co3(PO4)2, leading to enhanced light absorption of phosphates over the entire solar spectrum due to the increased FCC density and charge-carrier configurations. This absorber can also boost the photothermal performance of Ca(OH)2. The photothermal dehydration conversion of Ca(OH)2 is considerably improved (13.7 times). The reversibility of the photothermal hydration–dehydration cycles of Ca(OH)2 is improved by 39 times. This composite is promising for photothermal conversion and thermal energy storage in one-step.

The Ptcdi-C8/P-Si Heterojunction Diode: Its Construction and Electrical Characterization

In this study, an Al/PTCDI-C8/p-Si organic-inorganic (OI) heterojunction diode (C1) was fabricated by depositing a PTCDI-C8 thin film onto p-Si using the spin coating method. Likewise, a conventional Al/p-Si metal-semiconductor (MS) diode (C0) was fabricated without the use of an interlayer. I-V and C-V measurements of the C0 and C1 diodes were taken in the dark and at room temperature. The rectifying properties of both diodes were good. From the I–V characteristics, the ideality factor, barrier height, and series resistance of the C1 diode were determined to be 2.1, 0.74 eV, and 248 kΩ, respectively. The BH value obtained for the C1 heterojunction is higher than the value obtained for the conventional C0 diode. The electrical parameters of both the C1 and C0 diodes, particularly the series resistance, were recalculated using Cheungs and Norde methods. At room temperature, the C-V measurements of the diodes were carried out at various frequencies. From the evaluation of the C-V characteristics, the diffusion potential (Vd), barrier height (Φb(C-V)), and free carrier density (NA) of both diodes were calculated. Additionally, the device's photovoltaic parameters were measured under illumination conditions. The C1 heterojunction shows a photodiode behavior with the obtained photovoltaic parameters Voc and Isc.

Surface Defects Control Bulk Carrier Densities in Polycrystalline Pb-Halide Perovskites.

The (opto)electronic behavior of semiconductors depends on their (quasi-)free electronic carrier densities. These are regulated by semiconductor doping, i.e., controlled "electronic contamination". For metal halide perovskites (HaPs), the functional materials in several device types, which already challenge some of the understanding of semiconductor properties, this study shows that doping type, density and properties derived from these, are to a first approximation controlled via their surfaces. This effect, relevant to all semiconductors, and already found for some, is very evident for lead (Pb)-HaPs because of their intrinsically low electrically active bulk and surface defect densities. Volume carrier densities for most polycrystalline Pb-HaP films (<1µm grain diameter) are below those resulting from even < 0.1% of surface sites being electrically active defects. This implies and is consistent with interfacial defects controlling HaP devices in multi-layered structures with most of the action at the two HaP interfaces. Surface and interface passivation effects on bulk electrical properties are relevant to all semiconductors and are crucial for developing those used today. However, because bulk dopant introduction in HaPs at controlled ppm levels for electronic-relevant carrier densities is so difficult, passivation effects are vastly more critical and dominate, to first approximation, their optoelectronic characteristics in devices.

Comparative study of optical properties and photocatalytic performance of Cd0.4Mn0.6O nanocomposites incorporated with different metal oxides

The structural, optical, and photocatalytic properties of Cd0.4Mn0.6XO nanocomposites with 50 wt% of X were investigated (X denotes ZnO, SnO, CuO, Al2O3, Fe2O3, NiO, and CoO). The crystal structure of Cd0.4Mn0.6XO nanocomposites is composed of the monoclinic Cd2Mn3O8 phase, along with other individual phases dependent on the type of X dopant. The crystallite sizes are between 11.07 nm for CoO and 23.65 nm for ZnO, whereas the particle sizes are between 9.75 nm for ZnO and 35.61 nm for Fe2O3. The SnO, NiO, and CoO nanocomposites had the highest values of the effective surface area of 29.71, 26.3, and 24.1 m2/g, respectively. The NiO and SnO nanocomposites had the highest and lowest absorbance, respectively, notably at wavelength below 400 nm. SnO, NiO, CuO, and Fe2O3 nanocomposites have the highest values of energy gap (Eg > 2 eV), whereas CoO, ZnO, and Al2O3 nanocomposites have the lowest Eg values (< 2 eV). The SnO nanocomposite exhibited the highest values of refractive index, q-factor, lattice dielectric constant (εL), free carrier density (Nm∗), and optical/electrical conductivity when compared to the other Cd0.4Mn0.6XO nanocomposites. Interestingly, the values of εL and Nm∗ were enhanced to 21.2 and 4.9 × 1057 cm−3g−1 for SnO nanocomposite, followed by NiO and Fe2O3 nanocomposites. The photodegradation efficiency towards methylene blue (MB) using the Cd0.4Mn0.6XO catalysts after 3 h of UV–visible irradiation equals 97.94, 76.43, 74.43, 71.32, 65.98, 62.86, and 48.55 % for ZnO, NiO, SnO, Fe2O3, Al2O3, CuO and CoO nanocomposites, respectively. The photocatalytic performance of Cd0.4Mn0.6XO catalysts towards MB was compared to earlier investigations and a scavenger test was performed to validate the formation of reactive oxygen species. The features of Cd0.4Mn0.6XO nanocomposites are convenient for light-emitting diodes, solar cells, reduced electronic noise, high-power operation, and water purification.

Modelling and simulation in sim 3D software of a solar hybrid cell to using in PV power integration

A photovoltaic cell converts solar energy into electrical energy thanks to the photovoltaic effect. This technology is widely used in land and space applications. Many studies are being carried out to improve the models of these cells and for the proper functioning and to bring them to their maximum potency to be obtained. In this article, we present our photovoltaic cell model and for this we choose a GaAs-based pin cell, our studies carried out at the equilibrium of this cell. We used all our calculations on the SIM 3D simulator carried out in the “Component modelling and circuit design” team. This software is designed to study low geometry design components and to determine the volume of a structure, potential distributions and free carrier densities. The SIM 3D is under development by a group from the Mohamed Tahri University of Bechar. Algeria. We will present our photovoltaic cell model and our SIM 3D software development.

Stark effect in MoSe&lt;sub&gt;2&lt;/sub&gt; monolayer heterostructure

The effect of a vertical electric field on photoluminescence of a MoSe2 monolayer encapsulated with hexagonal boron nitride is investigated. In the spectra, there is a quadratic shift of the photoluminescence lines of excitons and trions from the applied potential difference, as well as a change in their intensity. It is found that the magnitude of the Stark shift significantly exceeds the theoretically predicted one. It is found that the energy distance between the trion and exciton lines in the spectra varies with the magnitude of the external field, which is due to the dependence of the density of free charge carriers in the monolayer on the field. This effect made it possible to determine the density of free charge carriers in the monolayer, which varies with the field and lies in the range from 0.3–3.4⋅1012 cm–2.

Spectroscopic ellipsometry investigation of a 6H–SiC single crystal plate for potential use in graphene optoelectronic devices

At room temperature, the spectroscopic ellipsometry SE parameters Epsi (ψ) and Delta (Δ) for 6H–SiC crystal substrate were measured in the wavelength range 350–1700 nm at four different angles of incidence, 60°, 65°, 70°, and 75°. An SE model was developed to extract optical consents of 6H–SiC crystal substrate from the experimentally measured SE parameters. In the wavelength range 350–1700 nm, the refractive index of the 6H–SiC crystal substrate was extracted and fitted to two terms of the Sellmeier dispersion function. In the wide spectral range (350–1700 nm), the Wemple-DiDomenico (WDD) dispersion model shows how the real refractive index changes with wavelength. The analysis of refractive index dispersion of the 6H–SiC crystal substrate using Sellmeier dispersion function and WDD optical model allows to extract oscillator strength Nfij, average oscillator energy Eo, dispersion energy of the single oscillator Ed, lattice oscillator strength El, Abbe dispersion number, energy gap Eg, density of valence electrons nv, refractive index at infinite wavelength n∞, lattice dielectric constant εL, the ratio of free carrier density to free carrier effective mass (N/m∗), and plasma frequency ωp. For the 6H–SiC crystal substrate, in the desired spectral range (240–1700 nm), it does not have any depolarization effect on the reflected polarized light.

MoⅣ boosted carrier density of MoO3-X for surface-enhanced Raman spectroscopy

Molybdenum oxides (MoO3-X) with the same surface plasmon resonance (SPR) effect as Au/Ag, and occupies an irreplaceable value in SERS detections. MoO3-X SERS substrates with oxygen-rich defects tend to show better SERS performance, but the preparation and characterization of tunable O defects remain challenging. It cannot be ignored that the oxidation state of metal cations is also influenced by O defects. Here, a series of MoO3-X SERS sensors with regulable Mo valence state were fabricated using magnetron sputtering technology. By changing the Mo sputtering power and the O2/Ar2 ratio, the Mo/O element ratio of the substrate can be easily regulated to readjust the O defects. The X-ray Photoelectron Spectroscopy (XPS) and Raman spectra were performed to investigate the change and related relationship between Mo mixed valence state and SERS sensitivity. The abundant incompletely coordinated electrons produced by low valence MoⅣ act as free carriers, increasing the free carrier density of MoO3-X substrates, which is beneficial for the SERS effect. It has also been proven by Hall effect measurement. The SERS measurement shows that the enhancement factor (EF) reached 3.70 × 105, which is exceedingly close to Au/Ag. The MoO2.5 substrate also exhibited a repeatable and consistent response, high stability, and repeatability, which proves the splendid application potential in complex environments.

The pH-dependent properties of cuprous oxide thin films prepared by electrochemical deposition for liquid petroleum gas sensing

Efficient liquid petroleum gas sensing was investigated by modulating the pH level (8, 9, 10, 11, and 12) of electrochemically deposited nanostructured cuprous oxide thin films in a lactate bath. The synthesized films were characterized by surface contact angle, XRD, SEM, UV–Vis absorption, Mott-Schottky, and AC impedance spectroscopy measurements. These displayed a unique initial increment or decrease followed by a persistent decrement or increment at pH 9–10. This turning pH point exhibited the least wetting polycrystalline Cu2O growth with the smallest crystallite size of ∼ 45 nm, the highest dislocation density of ∼50 µm−2, and a strain of 0.03 according to X-ray diffraction. SEM micrographs identified ∼ 1 µm-sized, closely structured grains with trigonal-prismatic shapes. The Mott-Schottky plots drawn from C-V measurements revealed a significant dependence of flat band potential and free carrier density on the deposition bath pH level. Cu2O films deposited using the lactate bath changed the conductivity at pH 9 from n-type to p-type when increasing the pH value. With the conductivity transition, films prepared at pH 9 displayed a relatively high direct band gap energy of 2.28 eV. Liquid petroleum gas (LPG) sensing at 70 °C demonstrated the most substantial gas response of 11.5 % at pH 10 Cu2O films. Cu2O thin films deposited at pH 9 emerged as the most stable and reproducible p-Cu2O LPG sensor, with response and recovery times ranging from 20 to 25 seconds. Remarkable changes in the film structures and morphologies were revealed with pH values above 9 after the gas exposure. The grain shape and distribution of pH 9 remained unchanged, assuring the stability of the sensing platform.

(Invited) Tunable Infrared Optoelectronics Achieved by the Reversible Intercalation of Ionic Liquid Anions in Multilayer Graphene in the Mid-Infrared Wavelength Range

We report the use of multilayer graphene (MLG) grown by chemical vapor deposition (CVD) approximately 75 layers (26 nm) thick configured in a simple electrochemical device. Applying a voltage of 3–4 V drives the intercalation of anion [TFSI-] (ion liquid diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide [DEME][TFSI]]) resulting in the reversible modulation of the properties of this optically dense material. Upon intercalation, we observe an abrupt shift of 35 cm−1 in the G band Raman mode, an abrupt increase in FTIR reflectance over the wavelength range from 1.67 to 5 μm (2000–6000 cm−1 ), and an abrupt increase in luminescent background observed in the Raman spectra of graphene. All of these abrupt changes in the optical properties of this material arise from the intercalation of the TFSI− ion and the associated change in the free carrier density (Δn = 1021 cm−3). Suppression of the 2D band Raman mode observed around 3 V corresponds to Pauli blocking of the double resonance Raman process and indicates a modulation of the Fermi energy of ΔEF= 1.1 eV. The thermal emissivity of the MLG device is also substantially modulated over the range from 7 – 14 µm. Using this device, have demonstrated free-space optical communication that utilizes ambient Planck radiation from a warm body and modulates the emitted intensity. We present an experimental demonstration achieving error-free communications at 100 bits per second over laboratory scales. We have also developed an AC Raman technique for measuring the Raman spectra during the intercalation−deintercalation half cycles in a multilayer graphene (MLG) device operating at 0.2−10 Hz. Raman spectra taken just 200 ms apart show the emergence and disappearance of the intercalated G band mode at around 1610 cm−1 . By integration of over hundreds of cycles, a significant Raman signal can be obtained. The intercalation/ deintercalation is also monitored with thermal imaging via voltage-induced changes in the carrier density, complex dielectric function ε(ω), and thermal emissivity of the device. “Dynamic Study of Intercalation/Deintercalation of Ionic Liquids in Multilayer Graphene Using an Alternating Current Raman Spectroscopy Technique” Zhi Cai, Haley Weinstein, Indu Aravind, Ruoxi Li, Sizhe Weng, Boxin Zhang, Jonathan L. Habif, and Stephen B. Cronin. Journal of Physical Chemistry Letters, 14, 7223 (2023).“Gate-tunable modulation of the optical properties of multilayer graphene by the reversible intercalation of ionic liquid anions” Zhi Cai, Indu Aravind, Haley Weinstein, Ruoxi Li, Jiangbin Wu, Han Wang, Jonathan Habif, and Stephen Cronin. Journal of Applied Physics. 132, 095102 (2022).“Harvesting Planck radiation for free-space optical communications in the long-wave infrared band“ Haley A. Weinstein, Zhi Cai, Stephen B. Cronin, and Jonathan L. Habif, Optics Letters. 47, 6225-6228 (2022). Figure 1

Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS2.

Many applications of transition metal dichalcogenides (TMDs) involve transfer to functional substrates that can strongly impact their optical and electronic properties. We investigate the impact that substrate interactions have on free carrier densities and defect-related excitonic (XD) emission from MoS2 monolayers grown by metal-organic chemical vapor deposition. C-plane sapphire substrates mimic common hydroxyl-terminated substrates. We demonstrate that transferring MoS2 monolayers to pristine c-plane sapphire dramatically increases the free electron density within MoS2 layers, quenches XD emission, and accelerates exciton recombination at the optical band edge. In contrast, transferring MoS2 monolayers onto inert hexagonal boron nitride (h-BN) has no measurable influence on these properties. Our findings demonstrate the promise of utilizing substrate engineering to control charge doping interactions and to quench broad XD background emission features that can influence the purity of single photon emitters in TMDs being developed for quantum photonic applications.

Formation and annihilation of bulk recombination-active defects induced by muon irradiation of crystalline silicon

Muons are part of natural cosmic radiation but can also be generated at spallation sources for material science and particle physics applications. Recently, pulsed muons have been used to characterize the density of free charge carriers in semiconductors and their recombination lifetime. Muon beam irradiation can also result in the formation of dilute levels of crystal defects in silicon. These crystal defects are only detected in high carrier lifetime silicon samples that are highly sensitive to defects due to their long recombination lifetimes. This work investigates the characteristics of these defects in terms of their formation, recombination activity, and deactivation. Charge carrier lifetime assessments and photoluminescence imaging have great sensitivity to measure the generated defects in high-quality silicon samples exposed to ∼4 MeV (anti)muons and their recombination activity despite the extremely low concentration. The defects reduce the effective charge carrier lifetime of both p- and n-type silicon and appear to be more detrimental to n-type silicon. Defects are created by transmission of muons through the wafer, and there are indications that slowed or implanted muons may create additional defects. In a post-exposure isochronal annealing study, we observe that annealing at temperatures of up to 450 °C does not by itself fully deactivate the defects. A recovery of charge carrier lifetime was observed when the annealing was combined with Al2O3 surface passivation, probably due to passivation of bulk defects from hydrogen from the dielectric film.

Tunable mid-infrared photodetector based on graphene plasmons controlled by ferroelectric polarization for micro-spectrometer

Surface plasmonic detectors have the potential to be key components of miniaturized chip-scale spectrometers. Graphene plasmons, which are highly confined and gate-tunable, are suitable for in situ light detection. However, the tuning of graphene plasmonic photodetectors typically relies on the complex and high operating voltage based on traditional dielectric gating technique, which hinders the goal of miniaturized and low-power consumption spectrometers. In this work, we report a tunable mid-infrared (MIR) photodetector by integrating of patterned graphene with non-volatile ferroelectric polarization. The polarized ferroelectric thin film provides an ultra-high surface electric field, allowing the Fermi energy of the graphene to be manipulated to the desired level, thereby exciting the surface plasmon polaritons effect, which is highly dependent on the free carrier density of the material. By exciting intrinsic graphene plasmons, the light transmittance of graphene is greatly enhanced, which improves the photoelectric conversion efficiency of the device. Additionally, the electric field on the surface of graphene enhanced by the graphene plasmons accelerates the carrier transfer efficiency. Therefore, the responsivity of the device is greatly improved. Our simulations show that the detectors have a tunable resonant spectral response of 9–14 μm by reconstructing the ferroelectric domain and exhibit a high responsivity to 5.67 × 105 A W−1 at room temperature. Furthermore, we also demonstrate the conceptual design of photodetector could be used for MIR micro-spectrometer application.

Enhanced Performance of Fe/WO3 Terahertz Dielectric Lenses

AbstractHerein transparent iron nanosheets deposited by the ionic coating technique onto glass and WO3 dielectric lenses are studied and characterized. The thickness of Fe nanosheets is varied in the range of 70–350 nm. It is observed that the transmittance and reflectance of the Fe nanosheets are highly affected by the layer roughness. Coating of iron nanosheets onto WO3 dielectric lenses increases the light absorption of WO3 by more than 240 times and red‐shifts the energy bandgap. Remarkable enhancements in the dielectric constant and in the optical conductivity are achieved via Fe coatings. In addition, iron coated dielectric lenses show higher terahertz cutoff limits varying in the range of 1.0–30 THz. Iron nanosheets remarkably increase the free charge carrier density and plasmon frequency in the infrared range of light. Moreover, the temperature dependent electrical conductivity shows high temperature stability and an increased electrical conductivity by more than 7 orders of magnitude by coating WO3 with 70 nm thick Fe nanosheets. The stability of the electrical conductivity at low temperatures and the wide range of terahertz cutoff limits in addition to the well‐enhanced light absorbability makes the iron coated tungsten oxide dielectric lenses promising for multifunction optoelectronic applications.

Defect controlled space charge limited conduction in CdS nanostructured sandwich structure

A defect induced space charge limited conduction mechanism in PVP capped CdS, CdS:Mn and CdS/ZnS nanostructured films has been discussed in this research paper. XRD confirms the hexagonal structure for core CdS and CdS:Mn nanostructure and a mixed type structure for CdS:Mn and CdS/ZnS core–shell nanostructure which agrees with HRTEM measurement. The optical properties shows average band gap around 2.3 eV. The current–voltage (I-V) characteristics of Cu/Film/Cu sandwich exhibit nearly ohmic behaviour at low bias, while at high it become trap induced space-charged limited conduction (SCLC), followed by trap free square law. A quantitative assessment has been done analysing the SCLC mechanism. The shallow traps owing to Mn doping and shelling, found within 0.15 eV to 0.20 eV may exponentially distributed above the electron Fermi level 0.24 eV. The free carrier density, total trap density, trap cross-section, escape frequency are estimated and co-related to growth.

Analysis of a Flexible Photoconductor, Manufactured with Organic Semiconductor Films.

This work presents the evaluation of the electrical behavior of a flexible photoconductor with a planar heterojunction architecture made up of organic semiconductor films deposited by high vacuum evaporation. The heterojunction was characterized in its morphology and mechanical properties by scanning electron microscopy and atomic force microscopy. The electrical characterization was carried out through the approximations of ohmic and SCLC (Space-Charge Limited Current) behaviors using experimental J-V (current density-voltage) curves at different voltages and under different light conditions. The optimization of the photoconductor was carried out through annealing and accelerated lighting processes. With these treatments, the Knoop Hardness of the flexible photoconductor has reached a value of 8 with a tensile strength of 5.7 MPa. The ohmic and SCLC approximations demonstrate that the unannealed device has an ohmic behavior, whereas the annealed device has an SCLC behavior, and after the optimization process, an ohmic behavior and a maximum current density of 0.34 mA/mm2 were obtained under blue light. The approximations of the device's electron mobility (μn) and free carrier density (n0) were performed under different light conditions, and the electrical activation energy and electrical gap were obtained for the flexible organic device, resulting in appropriate properties for these applications.

Chemically Engineered Titanium Oxide Interconnecting Layer for Multijunction Polymer Solar Cells.

We report chemically tunable n-type titanium oxides using ethanolamine as a nitrogen dopant source. As the amount of ethanolamine added to the titanium oxide precursor during synthesis increases, the Fermi level of the resulting titanium oxides (ethanolamine-incorporated titanium oxides) significantly changes from -4.9 eV to -4.3 eV, and their free charge carrier densities are enhanced by two orders of magnitudes, reaching up to 5 × 1018 cm-3. Unexpectedly, a basic ethanolamine reinforces not only the n-type properties of titanium oxides, but also their basicity, which facilitates acid-base ionic junctions in contact with acidic materials. The enhanced charge carrier density and basicity of the chemically tuned titanium oxides enable multi-junction solar cells to have interconnecting junctions consisting of basic n-type titanium oxides and acidic p-type PEDOT:PSS to gain high open-circuit voltages of 1.44 V and 2.25 V from tandem and triple architectures, respectively.

Dimensionality effects on trap-assisted recombination: the Sommerfeld parameter

In the context of condensed matter physics, the Sommerfeld parameter describes the enhancement or suppression of free-carrier charge density in the vicinity of a charged center. The Sommerfeld parameter is known for three-dimensional systems and is integral to the description of trap-assisted recombination in solids. Here we derive the Sommerfeld parameter in one and two dimensions and compare with the results in three dimensions. We provide an approximate analytical expression for the Sommerfeld parameter in two dimensions. Our results indicate that the effect of the Sommerfeld parameter is to suppress trap-assisted recombination in decreased dimensionality.

Influence of swift heavy ion irradiation on charge transport and conduction mechanisms across the interface of LaMnO3 and La0.7Ca0.3MnO3 manganites

Swift heavy ion (SHI) irradiated LaMnO3/La0.7Ca0.3MnO3 (LMO/LCMO) interfaces have been investigated to understand their charge transport and conduction mechanisms. Prominent effect of ion fluence has been discussed for the interface resistivity behaviors and metal to insulator phase transition for LMO/LCMO interfaces on the bases of lattice strain, crystalline granular state, crystalline imperfection, average grain size, grain boundary density and rms surface roughness. Field effect configuration (FEC) has been employed to study the interesting modifications in the irradiated LMO/LCMO interface resistivity under different applied electric fields to understand the depletion region, free charge carrier density, ferromagnetic phase fractions and crystal field based distortions. A Phenomenological percolation model has been employed to understand the role of phase separation in governing the charge conduction processes across LMO/LCMO interfaces.