Film Bulk Acoustic Resonator Research Articles

Study on the suppression of parasitic resonance of film bulk acoustic wave resonators

To suppress the parasitic resonance of a film bulk acoustic resonator (FBAR) and meet the high-frequency requirements of 5G communication, an FBAR model was established based on COMSOL Multiphysics simulation software. The effects of the piezoelectric materials, electrode lateral size, electrode shape (rectangle, circle, trapezoid, and regular pentagon), and apodization angle (30°, 36°, 40°, and 45°) on parasitic resonance were studied, and the suppression effect of the step-load structure on lateral acoustic wave leakage was discussed. The simulation results show that the best suppression effect on parasitic resonance is achieved when the piezoelectric material is AlN, the electrode shape is a non-regular pentagon, and the apodization angle is 40°; when the resonant area is 3600μm2, its non-circularity is 6.45 %, which is equivalent to the rectangular electrode when the resonant area is 10000μm2. The designed electrode step-load structure improved the quality factor at the parallel resonance point. When the electrode lateral size is 60 μm, the quality factor of the second-order electrode load structure is 1378, which is 10.07 % higher than the quality factor of the electrode-free load structure.

High-performance virtual sensors array based on a single-chip FBAR for volatile organic compounds (VOCs) detection and classification

The detection and classification of volatile organic compounds (VOCs) are of great significance in atmospheric environment monitoring and have garnered extensive attention in recent decades. This study proposes a virtual sensor array (VSA) for VOC detection and classification fabricating a single-chip high-Q-factor film bulk acoustic resonator (FBAR) functionalized with MIL-101(Cr) thin film, known for its porous crystal structure and high specific surface area. The sensing performance of five different VOCs was evaluated to characterize the VOCs, achieving high detection accuracy calibrated with the Langmuir adsorption model. The FBAR’s frequency response was utilized to determine the sensitivity and limit of detection (LOD), yielding sensitivity and LOD of 85.45 Hz/ppm and 51 ppm, respectively, for isopropanol. The identification and classification capabilities of the proposed VSA for VOCs and their mixtures were assessed using statistical methods and machine learning algorithms, realizing classification accuracies of 100 % for pure VOCs and 94.6 % for mixtures. The developed VSA demonstrates superior performances in VOC detection and classification, with potential applications across various domains.

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

Thin film bulk acoustic resonator (FBAR) with high quality factor (Q) is preferred for many communication applications. AlN film deposited in conventional FBAR fabrication process is poor, resulting in unsatisfactory device performance. This study demonstrated the comparison of two Si-substrate FBARs, adopting the same AlN deposition process by physical vapor deposition (PVD) method, however using different device fabrication method. Instead of depositing AlN film on Mo/SiO2/Si substrate in existing fabrication process, we deposited AlN directly on Si substrate by PVD to get better crystal quality piezoelectric layer of the FBAR. The full width at half maximum (FWHM) of rocking curve and surface roughness of AlN directly deposited on Si substrate are 1.4° and 1.96 nm, while those of AlN deposited on Mo/SiO2/Si substrate are 8.5° and 5.54 nm, respectively, indicating AlN deposited directly on Si substrate has a better crystal quality than that on Mo/SiO2/Si substrate. The dielectric loss of FBAR using AlN developed on Si substrate decreases from 0.4 Ω to 0.11 Ω leading to the increase of Q m from 470 to 830. By preserving the high quality AlN deposited on Si substate with film transfer method, the FBAR device enjoys an increasing of Q-values as high as 76%.

A scandium doped aluminum nitride thin film bulk acoustic resonator

Currently, we stand at the forefront of revolutionary advancements in communication technology. The escalating demands of advanced communication necessitate enhanced performance from materials and radio frequency devices. This paper aims to enhance film performance by depositing scandium-doped aluminum nitride (ScAlN) directly onto a Si substrate. Additionally, ScAlN was deposited on SiO2/AlN/Mo functional layers for comparison purposes. The ScAlN directly deposited on Si demonstrated superior performance in terms of crystalline quality and surface roughness, with a full width at half maximum of 1.7° and a roughness of 1.76 nm. Furthermore, a film bulk acoustic resonator (FBAR) based on the ScAlN film directly deposited on Si was successfully fabricated through thin-film transfer, with critical processes achieved via bonding and wet-etching of the substrate. The ScAlN in the fabricated resonator exhibited a favorable c-axis preferred orientation. The resulting ScAlN-based FBAR displayed a quality factor of 429. This study lays the groundwork for exciting opportunities in the development of higher-performance piezoelectric materials and devices.

Design of Hybrid Bandpass Filter Chips with High Selectivity and Wideband Using IPD and FBAR Technology

A novel hybrid bandpass filter (BPF) with wideband and high selectivity is proposed in this paper. The hybrid BPF is composed of two film bulk acoustic resonator (FBAR) cells and three lumped component resonators realized by the integrated passive device (IPD) technology. The ABCD matrix to S-parameters matrix method is used to calculate the frequency response of the BPF. Moreover, the expressions of transmission zeros (TZs) have been extracted. In the design process, an iterative design approach is proposed to improve the circuit and layout of the hybrid filter based on the packaged acoustic-electric hybrid simulation effect. Finally, two parts of the filter are packaged based on the flip-chip method, and two prototypes for the BPF are measured. The measured results of two chips with 3 dB fractional bandwidth of 13.7% and 15.8% are designed and fabricated, which verifies the validity of the proposed design principle.

Dynamic imaging of micro-vibrations with an ultra-wide bandwidth and a femtometer noise using switchable pulsed laser interferometry

Imaging the complex dynamics of micro-vibrations plays a fundamental role in the investigation of microelectromechanical systems (MEMS). However, it remains a challenge for achieving both a wide bandwidth and a low noise due to the high photodetector noise and electromagnetic interference at GHz frequencies. Here, we propose a pulsed laser interferometry system with an adaptable switch to image GHz vibrations based on stroboscopic mixing, while measuring lower-frequency vibrations based on the homodyne scheme. The noise power spectral density is shown in both regions from DC to 10 GHz with an average noise down to 30.8 fm/√Hz at GHz frequencies, which holds the highest resolution to the best of our knowledge. Vibrational amplitude and phase mappings of a kHz comb-drive resonator, a GHz piezoelectric transducer, and a GHz film bulk acoustic resonator are presented with animated visualizations and k-space analysis, paving a new paradigm for the first time to image and analyze various MEMS devices of a bandwidth spanning 10 orders of magnitude.

Aluminium Scandium Nitride Thin Film BAW Resonators (FBAR) for 5G Applications

With the growing impact of 5G communication system, Radio-Frequency Micro-Electro-Mechanical-Systems (RF MEMS) technologies are becoming increasingly important in our daily lives. Development of filters in the 5G frequency range is being carried out tremendously. The rapid rise in smartphone usage, heightened data demands, congestion in the frequency spectrum, and advancements in technology have posed numerous challenges for the development of RF filters. The ultimate goal is to simplify the RF Front End Module used in smart phones, thereby achieving better selectivity. In this paper, a high frequency - high Q thin film bulk acoustic wave resonator of piezoelectric material Aluminium scandium nitride (AlScN)based FBAR is designed for 5G Application. Finite element analysis conducted using the COMSOL Multiphysics software assess the characteristics of the constructed FBAR. The outcomes indicate that the device resonates effectively at 5 GHz, exhibiting commendable return loss and a Q-factor of 1490. A high-resonance-frequency FBAR device offers advantages for 5G mobile technology.

Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter.

With the development of wireless communication, increasing signal processing presents higher requirements for radio frequency (RF) systems. Piezoelectric acoustic filters, as important elements of an RF front-end, have been widely used in 5G-generation systems. In this work, we propose a Sc0.2Al0.8N-based film bulk acoustic wave resonator (FBAR) for use in the design of radio frequency filters for the 5G mid-band spectrum with a passband from 3.4 to 3.6 GHz. With the excellent piezoelectric properties of Sc0.2Al0.8N, FBAR shows a large Keff2 of 13.1%, which can meet the requirement of passband width. Based on the resonant characteristics of Sc0.2Al0.8N FBAR devices, we demonstrate and fabricate different ladder-type FBAR filters with second, third and fourth orders. The test results show that the out-of-band rejection improves and the insertion loss decreases slightly as the filter order increases, although the frequency of the passband is lower than the predicted ones due to fabrication deviation. The passband from 3.27 to 3.47 GHz is achieved with a 200 MHz bandwidth and insertion loss lower than 2 dB. This work provides a potential approach using ScAlN-based FBAR technology to meet the band-pass filter requirements of 5G mid-band frequencies.

Reliable formulas for accurately determining the resonance and antiresonance frequencies of thin film bulk acoustic resonators

Expanding upon Lakin’s theory by considering the phase shift of the acoustic waves in the metallic layers, we have developed an impedance formula for a piezoelectric layer covered by a finite thickness of metal layers, enabling the precise determination of its resonant and anti-resonant frequencies. Compared to experimental data and 3D finite element simulations, our formula can accurately and quickly predict resonant, anti-resonant frequencies, and bandwidth across a wide range of piezoelectric and metallic layer thickness combinations.

Impacts of Electrode Resistance on Resonance Characteristics of Film Bulk Acoustic Resonators

In the actual manufacturing process of film bulk acoustic resonators (FBAR), metal leads are necessary to complete the electrical topological connection. However, the electrode resistance will significantly influence the characteristics of the resonator. In this paper, the influence of electrode resistance on resonance characteristics of FBAR is analyzed. To be specific, how different electrode resistances affect the quality factor, impedance value, and electromechanical coupling factor of the FBAR series-parallel resonance frequencies is studied by incorporating the electrode resistances into an overall equivalent electromechanical model (i.e., the Mason model) and the COMSOL finite element simulation method. The results show that the increase of electrode resistance will result in the decrease of the series resonant frequency, the impedance value increases significantly and the quality factor decreases significantly at series resonant, while the parallel resonant frequency does not change, the impedance value slightly increases and the quality factor slightly decreases at parallel resonant, and their electromechanical coupling factor slightly increases.

Use of periodic 2D pillar array for performance enhancement of AlN-based SMR BAW resonators

This paper discusses the applicability of a two-dimensional (2D) periodic pillar array as the first layer of an acoustic mirror for AlN-based solidly mounted resonators of bulk acoustic waves. It is based on the idea that the periodic pillar array behaves like a uniform layer when the period is much smaller than the wavelength and its behavior is given by the ensemble average of pillar materials. The simulation shows that the effective electromechanical coupling factor can be enhanced close to that of AlN-based film bulk acoustic resonators when the slot ratio is large. It is also shown that the use of a 2D pillar array can enhance the reflectivity of the Bragg reflector. It should be noted that the periodic 2D pillar array can also control the anisotropy of wave propagation along the surface. Owing to this, transverse mode resonances can be suppressed well by adjusting the wave dispersion curve properly.

Highly improved quality factor of the film bulk acoustic wave resonator by introducing a high quality ZnO buffer layer

The inferior film quality of sputtered AlN has hindered the further development of high-performance film bulk acoustic wave resonators (FBAR). In this work, the ZnO buffer layer was introduced into the FBAR to improve the performance of FBAR for the first time. Compared with its counterpart without the buffer layer, the devices with a buffer layer exhibited a far higher average quality factor (2π times the maximum energy stored in the FBAR/energy dissipated per period) of 2575 ± 136, which was about 64 % larger than that without a buffer layer. Benefiting from the enhanced crystalline quality of AlN, the device also showed an improved effective electromechanical coupling coefficient.

Analysis and verification on second-order nonlinearity in radio frequency bulk acoustic wave devices employing temperature compensation films

This paper discusses the impact of SiO2/SiOF on second harmonic (H2) generation in temperature-compensated (TC) film bulk acoustic resonators (FBARs). First, two types of TC-FBARs are fabricated and their H2 behavior is compared with that of the standard FBAR. Next, the H2 characteristics of the TC layer are investigated by the use of a series of TC-FBARs where SiOF and Cr layers are placed on the outside of electrodes. The simulations agree very well with the measurements and can explain well how the H2 response changes with Cr thickness. Not only AlN but also SiOF contributes to the generation of H2 response, and H2 becomes very small at an appropriate Cr thickness. Finally, the TC-FBAR filter operating at 5.9 GHz is fabricated and its H2 response is compared with the simulation. The simulation agrees well with the experiment. It is also demonstrated that the insertion of the TC layer is effective in suppressing H2 generation.

A cancer cell nanotherapy method based on GHz film bulk acoustic resonator and nanoscale CaO2.

Sonodynamic therapy (SDT) is an emerging cancer treatment method in recent years. However, the ultrasound signal utilized for SDT is usually located at a low-frequency spectrum (<2MHz), and in the field of SDT research, few studies have focused on the exploration and development of ultrasound frequency. Studies have shown that the GHz-level ultrasound can increase cell membrane permeability and have a negligible effect on cell vitality. Herein, we reported the study of a GHz thin film bulk acoustic resonator as an ultrasound source for synergistic treatment with nanoscale calcium peroxide (CaO2). It was discovered that this ultrasound source ultimately achieved an efficient therapeutic outcome on mouse breast cancer cell line 4T1. Such GHz-level ultrasound application in SDT is of high significance to broaden the cognition and application scope of SDT.

Advanced technologies of FBAR for tuning effective electromechanical coupling coefficient

The film bulk acoustic wave resonator (FBAR) is one of the most popular devices in the radio frequency field. Numerous researchers are simultaneously working to develop an effective electromechanical coupling coefficient (keff2) tuning technology, aiming to meet the diverse bandwidth requirements of the 5 G era. Based on a traditional FBAR process, this work prepares several different devices and then analyzes the four factors that influence keff2 from the perspective of process, material, and design. The pillar structure achieves the largest keff2 tuning range of 2.84% (33 MHz). The composite piezoelectric film can tune the overall resonant frequency in a wide range, and its keff2 tuning range is 1.75% (12.5 MHz). The area effect tunes the fs in a small range, ultimately achieving a keff2 tuning range of 1.16% (11 MHz). Film stress regulation achieves keff2 tuning range of 2.73% (30 MHz), but it has the greatest difficulty. The integration of various keff2 tunable methods has important guiding significance for the design of FBAR filters in the future.

Analysis of Different Piezoelectric Materials on the Film Bulk Acoustic Wave Resonator

The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 µm × 25 µm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.

Design and modeling of film bulk acoustic resonator considering temperature compensation for 5G communication

Design and modeling of film bulk acoustic resonator considering temperature compensation for 5G communication

Novel mode-coupling vibrations of AlN thin film bulk acoustic resonator operating with thickness-extensional mode

Novel mode-coupling vibrations of AlN thin film bulk acoustic resonator operating with thickness-extensional mode

Temperature Cycle Reliability Analysis of an FBAR Filter-Bonded Ceramic Package.

On the background that the operating frequency of electronic devices tends to the radio frequency (RF) segment, a film bulk acoustic resonator (FBAR) filter is widely used in communication and military fields because of its advantages of high upper frequency, ample power capacity, small size, and low cost. However, the complex and harsh working environment puts higher requirements for packaging FBAR filters. Based on the Anand constitutive equation, the stress-strain response of the bonded ceramic package was studied by the finite element method for the FBAR filter-bonded ceramic package, and the thermal fatigue life of the device was predicted. We developed solder models with various spillage morphologies based on the random generation technique to examine the impact of spillage on device temperature reliability. The following are the primary conclusions: (1) Solder undergoes periodic deformation, stress, and strain changes throughout the cycle. (2) The corner of the contact surface between the chip and the solder layer has the largest stress at the end of the cycle, measuring 19.377 MPa. (3) The Engelmaier model predicts that the gadget will have a thermal fatigue life of 1928.67 h. (4) Expanding the layered solder area caused by any solder overflow mode may shorten the device's thermal fatigue life. The thermal fatigue life of a completely spilled solder is higher than that of a partially spilled solder.

Design, Optimization and Performance Assessment of Single Port Film Bulk Acoustic Resonator through Finite Element Simulation.

In this paper, the study is supported by design, FEA simulation, and practical RF measurements on fabricated single-port-cavity-based acoustic resonator for gas sensing applications. In the FEA simulation, frequency domain analysis was performed to enhance the performance of the acoustic resonator. The structural and surface morphologies of the deposited ZnO as a piezoelectric layer have been studied using XRD and AFM. The XRD pattern of deposited bulk ZnO film indicates the perfect single crystalline nature of the film with dominant phase (002) at 2θ = 34.58°. The AFM micrograph indicates that deposited piezoelectric film has a very smooth surface and small grain size. In the fabrication process, use of bulk micro machined oxide (SiO2) for the production of a thin membrane as a support layer is adopted. A vector network analyzer (Model MS2028C, Anritsu) was used to measure the radio frequency response of the resonators from 1 GHz to 2.5 GHz. As a result, we have successfully fabricated an acoustic resonator operating at 1.84 GHz with a quality factor Q of 214 and an effective electromechanical coupling coefficient of 10.57%.