Film Bulk Acoustic Resonator Research Articles

Film bulk acoustic resonators with 400 MHz ultrawide-range tunability using crystalline PZT thin film

Tunable and switchable film bulk acoustic resonators (FBARs) have great application potential owing to their much-increased flexibility in radiofrequency (RF) circuits. Here, we report on the design and fabrication of a tunable and switchable FBAR based on a thin crystalline lead zirconate titanate (PZT, Pb[Zr0.6Ti0.4]O3) film. The FBAR device has a resonant frequency of 2.42 GHz with a high effective electromechanical coupling coefficient keff2 of 30%. The frequency tunable range of the device is up to 400 MHz (2.11–2.51 GHz, 16.6%) with a DC bias voltage of less than 12 V, and the device can also be switched off when the polarization intensity in the PZT film is zero. Through the investigation, a relationship between the ferroelectric nature of PZT material and the wide tuning range of FBAR is established, providing a theoretical and experimental guideline for further development.

High-quality c-axis oriented Al(Sc)N thin films prepared by magnetron sputtering

In order to adapt to the upgrading of wireless communication system, thin film bulk acoustic resonator (FBAR) has become one of the research hotspots in the communication field. The piezoelectric film, such as aluminum nitride (AlN), is the core functional layer of this device. However, previous reports have only focused on specific characteristics of the piezoelectric film, such as preferred orientation, piezoelectric coefficient, residual stress and so on. In this work, AlN and 6% scandium doped AlN films with (002) preferred orientation were deposited on (100) silicon wafers by direct-current magnetron reactive sputtering. We studied the crystallinity, roughness, element distribution, stress and additional characteristics of the films, and compared the quality changes of AlN thin films doped with Sc. Our results showed that all the deposited films had a uniform and dense structure with high crystallinity. But, the doping of Sc significantly reduced the nonuniformity, roughness, and stress of AlN films. Our research is of great significance for the preparation of high-quality piezoelectric thin films to improve the performance of FBAR filters, and ultimately improve the yield of devices.

High performance multilayer heterogeneous resonators based on 128° YX lithium niobate and diamond composite films for 5 GHz and beyond

The advent of the new 5G communication standard has introduced demanding requirements for the performance of RF front-end filters, necessitating high frequency, large bandwidth, and other improved parameters. Consequently, researchers have been actively investigating the potential of surface acoustic wave resonators and film bulk acoustic resonators to address these needs, leading to the development of numerous novel structures. Through finite element simulation, a new heterogeneous stack structure Al/LN/diamond/Si with an interdigitated electrode resonant cavity is proposed. And the advantageous role of a diamond thin film in the surface acoustic wave resonant structure, including the excitation of high-frequency acoustic resonance modes and modulation of the electromechanical coupling coefficient has been studied. This structure holds promise for addressing the increasing demands for high-frequency, large-bandwidth RF front-end filters in the context of the new 5G communication standard. The results show that the central resonant frequency of the new structure resonator is 5284 MHz, the electromechanical coupling coefficient is 10.96%, and the Q factor value is 10 316, which has potential application value in the field of high-frequency filtering.

An analysis of nonlinear thickness vibration frequencies of multi-layered film bulk acoustic resonators

The fast reduction of the physical size of film bulk acoustic wave resonators as a layered structure implies the intensification of the electric field which can induce large deformation in the functioning state of devices as a circuit element. Consequently, the nonlinear behavior of the resonator and accompanying properties are to be included and evaluated in the development and optimization for performance improvement. With this objective, the nonlinear formulation of a multilayered film bulk acoustic resonator is presented for the analysis of vibration frequencies and mode shapes with the consideration of larger mechanical deformation. The dominantly linear relationship between the voltage or deformation and frequency is obtained to understand the nonlinear behavior and properties which have been subjected to extensive research analytically and experimentally to satisfy the application needs in all modes of communications and network technology.

Thermally compensated ZnO film bulk acoustic resonator for RF application above 5GHz frequency

Thermally compensated ZnO film bulk acoustic resonator for RF application above 5GHz frequency

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes

AbstractConventional bulk and thin piezoelectric materials based film bulk acoustic resonators (FBARs) are facing an insurmountable challenge for millimetric frequency applications due to the poor piezoelectric properties of the materials when their thickness reaches the sub‐micron regime. Novel FBARs for ultra‐high working frequencies are in urgent demand to meet the requirements of the fast‐growing 5/6G telecommunication techniques. Recent advances in 2D piezoelectric nanomaterials create an opportunity in this perspective. Here, the first FBAR chip based on 2D 3R‐MoS2 ultrathin piezoelectric flakes with a solidly mounted resonator (SMR) architecture is reported. The typical resonant frequency for an SMR device based on ≈200 nm 3R‐MoS2 flake reaches over 25 GHz with high reproducibility. Theoretical and finite element analysis suggest that the observed resonance is of longitudinal acoustic modes. This study demonstrates for the first time that the access to 2D piezoelectric nanomaterials makes high performance piezoelectric devices feasible for various promising applications including high‐speed telecommunication, acousto‐optic, and sensor fields,etc.

Aluminum Nitride Based Film Bulk Acoustic Resonator With Anchor Column Structure

In order to reduce the lateral acoustic energy loss of thin film bulk acoustic resonators (FBARs), the trench structure for FBAR is generally designed to block the leakage of acoustic wave and help improving the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> -factor. One method the designers often used is etching the piezoelectric material around the active area of the FBAR to form the air-wall structure as a perfect reflection boundary condition. In this paper, the FBAR with trench structure is fabricated. The multilayer films in the FBAR with trench structure are easily warped due to excessive compressive stress. The numerical analysis and finite element simulation are used to verify the effects of different stresses on the devices. In order to avoid the degradation of FBAR performance caused by film warpage, the FBAR with anchor columns is proposed. The anchor columns are located on both sides of the FBAR, and they are designed to reduce film bending and the compressive stress of active area of the resonator. The measured results show that the Qs and Qp of the FBAR with anchor columns are increased by 55.8% and 21.1%, respectively, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$k_{eff}{}^{2}$ </tex-math></inline-formula> improved from 5.6% to 6.7% compared with the FBAR without the anchor columns. [2022-0179]

Wearable Resonator-Based Respirable Dust Monitor for Underground Coal Mines

Exposure to respirable coal dust and diesel exhaust in underground coal mines can cause detrimental airway diseases such as coal worker’s pneumoconiosis (CWP), silicosis, and lung cancer. In this article, we present the design, fabrication, and experimental evaluation of a low-cost wearable respirable dust monitor (WEARDM) that uses a dual-resonator gravimetric sensing approach for real-time measurement of respirable airborne particulate matter (PM) concentrations. The sensor selects for the ISO-respirable dust fraction using a miniature virtual impactor (VI) and removes moisture from the collected dust to ensure accurate mass measurement. WEARDM uses a novel dual-resonator mass sensor (DRMS) that is composed of a quartz crystal microbalance (QCM) and a film bulk acoustic resonator (FBAR). The QCM measures the mass concentration of particles generated from coal mining operations [typically >2.5- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> aerodynamic diameter (AD)], separated using inertial impaction. Thermophoretic precipitation is used to deposit the fine and ultrafine particles, such as those emitted from diesel sources [typically <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$ &lt; 0.1~\mu \text{m}$ </tex-math></inline-formula> AD) on FBAR. This allows the WEARDM system to maintain a large dynamic range and uniform collection efficiency (CE) across the entire respirable fraction. The WEARDM system is optimized for a low flow rate of 250 mL/min which results in low power usage and a small form factor and is an order of magnitude smaller and less expensive than currently available devices.

FEM modelling and performance evaluation of a flexible film bulk acoustic resonator

FEM modelling and performance evaluation of a flexible film bulk acoustic resonator

An 8-inch commercial aluminum nitride MEMS platform for the co-existence of Lamb wave and film bulk acoustic wave resonators

This work investigates a co-design approach for fundamental symmetric Lamb wave (S0) resonators (LWR) and film bulk acoustic wave resonators (FBAR) in a commercial 8-inch aluminum nitride (AlN) microelectromechanical system (MEMS) platform to enable multi-band operation. The platform utilizes surface micromachining to define local release cavities, providing an undercut-free solution for acoustic resonators to achieve a high quality factor (Q). However, being based on a standardized platform initially tailored for FBAR devices, many design considerations and trade-offs need to be investigated for the co-existence between LWR and FBAR design. Hence, to capture the optimal design window for S0 LWRs while analyzing its performance impact on existing FBARs, the electrode configuration and its thickness are thoroughly investigated by the finite element method. In this work, a 2.2 GHz FBAR, a 700 MHz S0 LWR, and a 2.19 GHz S0 Lamé LWR are demonstrated for performance evaluation across different types of devices in this platform. The measurement results revealed a baseline performance for the FBAR device with an electromechanical coupling factor () of 6.73% and Q of 3017 at 2.2 GHz, resulting in a high figure-of-merit (FoM = ) over 200. In comparison, the 700 MHz S0 LWR exhibits a high Q of 2532 as well and a of 1.1% (FoM = 27.8), while the 2.19 GHz S0 Lamé LWR also exhibits a high Q of 1752 and a of 2.44% (FoM = 42.7), respectively. These performance indexes are all comparable with the current state-of-the-art, revealing the excellent potential of this AlN MEMS platform being implemented for future LWR development design or even mass production.

A 3.4–3.6 GHz High-Selectivity Filter Chip Based on Film Bulk Acoustic Resonator Technology

The development of mobile 5G technology poses new challenges for high-frequency and high-performance filters. However, current commercial acoustic wave filters mainly focus on 4G LTE, which operates below 3 GHz. It is necessary to accelerate research on high-frequency acoustic wave filters. A high-selectivity film bulk acoustic resonator (FBAR) filter chip for the 3.4–3.6 GHz range was designed and fabricated in this paper. The design procedure includes FBAR parameter fitting, filter schematic analysis, and the generation principle of transmission zeros (TZs). The measured results show that the filter chip is of high roll-off and stopband suppression. Most of the stopband suppression is better than 35 dB. Finally, error analysis was conducted, and FBAR parameters were modified after testing for future filter design work.

Perturbation analysis of second-order nonlinearity and its effectiveness for radiofrequency bulk acoustic wave devices

Suppression of nonlinear signal generation in radiofrequency (RF) surface and bulk acoustic wave devices is one of the most important subjects for the RF front-end modules of recent cellular handsets. In particular, issues with second-order nonlinear products of bulk acoustic waves are well known. In this work, we succeeded in extracting the dominant parameters for second-order nonlinear analysis proposed by Hashimoto et al. [Joint Conf. European Frequency and Time Forum and IEEE Freq. Cont. Symp., 2017, p. 538] and verified that it is applicable in a wide frequency range and also effective for film bulk acoustic resonator (FBAR) device design. Combining the extracted nonlinear coefficients on the perturbation analysis by driving near the fundamental frequency (f0) and half resonant frequency (1/2f0) of the FBAR could reproduce second-order nonlinear characteristics in a wide frequency range. It was also confirmed that the proposed simulations are in good agreement with measurement results for various types of resonators and FBAR filters.

Flexible Film Bulk Acoustic Resonator Based on Low-Porosity β-Phase P(VDF-TrFE) Film for Human Vital Signs Monitoring.

P(VDF-TrFE) is a promising material for flexible acoustic devices owing to its good piezoelectric performance and excellent stretchability. However, the high density of internal pores and large surface roughness of the conventional P(VDF-TrFE) results in a high propagation attenuation for acoustic waves, which limits its use in flexible acoustic devices. In this paper, a novel method based on two-step annealing is proposed to effectively remove the pores inside the P(VDF-TrFE) film and reduce its surface roughness. The obtained P(VDF-TrFE) film possesses excellent characteristics, including a high breakdown strength of >300 kV/mm, a high-purity β-phase content of more than 80%, and high piezoelectric coefficients (d33) of 42 pm/V. Based on the low-porosity β-phase P(VDF-TrFE) film, we fabricated flexible film bulk acoustic resonators (FBARs) which exhibit high sharp resonance peaks. The pressure sensor was made by sandwiching the FBARs with two PDMS microneedle patches. Heartbeat and respiration rate monitoring were achieved using the pressure sensor. This work demonstrates the feasibility of high-performance flexible piezoelectric acoustic resonators based on low-porosity P(VDF-TrFE) films, which could see wider applications in the wearable sensors for both physical and chemical sensing.

Portable FBAR based E-nose for cold chain real-time bananas shelf time detection

Being cheap, nondestructive, and easy to use, gas sensors play important roles in the food industry. However, most gas sensors are suitable more for laboratory-quality fast testing rather than for cold-chain continuous and cumulative testing. Also, an ideal electronic nose (E-nose) in a cold chain should be stable to its surroundings and remain highly accurate and portable. In this work, a portable film bulk acoustic resonator (FBAR)-based E-nose was built for real-time measurement of banana shelf time. The sensor chamber to contain the portable circuit of the E-nose is as small as a smartphone, and by introducing an air-tight FBAR as a reference, the E-nose can avoid most of the drift caused by surroundings. With the help of porous layer by layer (LBL) coating of the FBAR, the sensitivity of the E-nose is 5 ppm to ethylene and 0.5 ppm to isoamyl acetate and isoamyl butyrate, while the detection range is large enough to cover a relative humidity of 0.8. In this regard, the E-nose can easily discriminate between yellow bananas with green necks and entirely yellow bananas while allowing the bananas to maintain their biological activities in their normal storage state, thereby showing the possibility of real-time shelf time detection. This portable FBAR-based E-nose has a large testing scale, high sensitivity, good humidity tolerance, and low frequency drift to its surroundings, thereby meeting the needs of cold-chain usage.

2D scalar wave modelling of apodized RF BAW resonators for transverse mode analysis

This paper proposes the use of a two-dimensional scalar wave model for fast analysis of apodized AlN-based radio frequency bulk acoustic wave devices. First, the working principle and model setup is introduced. Only one particular Lamb mode (S1−) is considered, and its behavior is modeled by a simple scalar wave equation looking from the top surface. Multiple layers are added to the side boundaries so that mode conversion to other modes is treated as leakage to surroundings. The wavenumber of field distribution for each resonance mode is calculated, and then its excitation coefficient, quality factor, and resonance frequency are derived. The device input admittance is calculated by applying derived parameters to the equivalent circuit. A series of oval-shaped AlN-based film bulk acoustic resonator devices are simulated and compared with experimental results. The theoretical results agreed well with the experimental ones, and accuracy and effectiveness of the present analysis are verified.

Trends and Applications of Surface and Bulk Acoustic Wave Devices: A Review.

The past few decades have witnessed the ultra-fast development of wireless telecommunication systems, such as mobile communication, global positioning, and data transmission systems. In these applications, radio frequency (RF) acoustic devices, such as bulk acoustic waves (BAW) and surface acoustic waves (SAW) devices, play an important role. As the integration technology of BAW and SAW devices is becoming more mature day by day, their application in the physical and biochemical sensing and actuating fields has also gradually expanded. This has led to a profusion of associated literature, and this article particularly aims to help young professionals and students obtain a comprehensive overview of such acoustic technologies. In this perspective, we report and discuss the key basic principles of SAW and BAW devices and their typical geometries and electrical characterization methodology. Regarding BAW devices, we give particular attention to film bulk acoustic resonators (FBARs), due to their advantages in terms of high frequency operation and integrability. Examples illustrating their application as RF filters, physical sensors and actuators, and biochemical sensors are presented. We then discuss recent promising studies that pave the way for the exploitation of these elastic wave devices for new applications that fit into current challenges, especially in quantum acoustics (single-electron probe/control and coherent coupling between magnons and phonons) or in other fields.

Influence of AlN/ScAlN piezoelectric multilayer on the electromechanical coupling of FBAR

Based on the truth, the electromechanical coupling in the top and bottom Mo electrodes caped AlN can be enhanced by replacing the Sc doped AlN (ScAlN). We tune the electromechanical coupling (kt2) of the film bulk acoustic resonator (FBAR) by varying the thickness ratio in AlN and ScAlN piezoelectric multilayer. We found that the electromechanical coupling of the piezoelectric-multilayer FBAR is area size dependent. In order to investigate the multilayer electromechanical coupling in various thickness ratios, we propose a theory to simulate both materials piezoelectric constants e varying with the area size. In various thickness ratios, the effective piezoelectric constant of the AlN layer increases with the area of FBAR, but the ScAlN layer exhibits an optimal piezoelectric constant in increasing area. Eventually, we realized that increasing the significant piezoelectric constant is inevitable for reducing the size of FBARs.

Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

Bulk acoustic wave (BAW) filters have been extensively used in consumer products for mobile communication systems due to their high performance and standard complementary metal-oxide-semiconductor (CMOS) compatible integration process. However, it is challenging for a traditional aluminum nitride (AlN)-based BAW filter to meet several allocated 5G bands with more than a 5% fractional bandwidth via an acoustic-only approach. In this work, we propose an Al0.8Sc0.2N-based film bulk acoustic wave resonator (FBAR) for the design of radio frequency (RF) filters. By taking advantage of a high-quality Al0.8Sc0.2N thin film, the fabricated resonators demonstrate a large Keff2 of 14.5% and an excellent figure of merit (FOM) up to 62. The temperature coefficient of frequency (TCF) of the proposed resonator is measured to be −19.2 ppm/°C, indicating excellent temperature stability. The fabricated filter has a center frequency of 4.24 GHz, a −3 dB bandwidth of 215 MHz, a small insertion loss (IL) of 1.881 dB, and a rejection >32 dB. This work paves the way for the realization of wideband acoustic filters operating in the 5G band.

Demonstration of Thin Film Bulk Acoustic Resonator Based on AlN/AlScN Composite Film with a Feasible Keff2.

Film bulk acoustic resonators (FBARs) with a desired effective electromechanical coupling coefficient (Keff2) are essential for designing filter devices. Using AlN/AlScN composite film with the adjustable thickness ratio can be a feasible approach to obtain the required Keff2. In this work, we research the resonant characteristics of FBARs based on AlN/AlScN composite films with different thickness ratios by finite element method and fabricate FBAR devices in a micro-electromechanical systems process. Benefiting from the large piezoelectric constants, with a 1 μm-thick Al0.8Sc0.2N film, Keff2 can be twice compared with that of FBAR based on pure AlN films. For the composite films with different thickness ratios, Keff2 can be adjusted in a relatively wide range. In this case, a filter with the specific N77 sub-band is demonstrated using AlN/Al0.8Sc0.2N composite film, which verifies the enormous potential for AlN/AlScN composite film in design filters.

Investigation of film bulk acoustic resonators for sensing applications in liquid environment

The thin film bulk acoustic resonator (FBAR) has emerged as a promising choice for liquid sensors because of its high frequency and sensitivity. To investigate the potential of FBAR devices working as the liquid sensors, we study the operating law of FBAR in liquid environments and explore the different loading effects of liquid on the shear mode and longitudinal mode. By analyzing the device and liquid interactions, we modify the Mason model of FBAR in the liquid environment. Subsequently, the influence of the piezoelectric film with different tilt angles and liquids on the characteristics of FBAR is discussed. We also prepared Sc0.2Al0.8N film-based FBAR to confirm the influence of different liquid environments on the resonant performances. The results show that the frequency drift of FBAR in the shear mode is related to density and viscosity of liquid, and the frequency drift of FBAR in the longitudinal mode is related to bulk modulus and density of liquid. The resonant frequency of FBAR in the shear mode is more sensitive with glycerol solution than that of FBAR in the longitudinal mode. This work can provide a research basis for the application of FBAR liquid sensors.