Properties Of Field-effect Transistors Research Articles

Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors.

Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS2) nanoribbons as small as sub-10 nm in width. The WS2 nanoribbon junctions having different widths display diodic current-voltage characteristics, providing a way to create and tune nanoscale device properties by controlling the size of the structures. The transport properties of the nanoribbon FETs are primarily governed by narrow channel effects, where the mobility in the narrow channels is limited by edge scattering. Our findings on nanoribbon devices hold potential for developing future-generation nanometer-scale van der Waals semiconductor-based devices and circuits.

Enhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the Y2O3 Isolation Layer.

Nanowire (NW) field-effect transistors (FETs) have great potential in next-generation integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent electrical properties. However, unlike the Si/SiO2 system, the loose and defective native oxide of InAs is unable to passivate the channel surface and serve as an efficient isolation layer (IL) in the gate stack. Here, we, for the first time, demonstrate that using a stable dielectric Y2O3 to replace the native oxide IL can effectively passivate the NW surface, isolate the channel surface from high-k HfO2, and improve the electrical properties of InAs NW FETs significantly. First, top-gate devices with Y2O3 IL outperform the devices with native oxide or chemically generated oxide of InAs as the IL, exhibiting a small subthreshold swing (SS) of 77 mV/dec, a large on-off ratio, a high field-effect mobility (μFE) of 1845 cm2/V·s, and an extremely low interface trap density (Dit) of 9.1 × 1011 eV-1 cm-2. Double-gate FETs with Y2O3 IL also show excellent gate control (drain-induced barrier lowering (DIBL) down to 35 mV/V) and a high μFE of 2711 cm2/V·s (the highest in the multigate structure). In addition, InAs NW FETs with Y2O3 IL show greater stability after long-term air exposure than those with native oxide IL, demonstrating retained on-off ratio, DIBL, transconductance, and even smaller SS (from 89 to 77 mV/dec). Finally, the results of low-temperature measurement suggest that Y2O3 IL can effectively improve interface qualities. Our results indicate that Y2O3/HfO2 InAs NW FETs have great potential in digital units of integrated circuits for future nodes. Our strategy for improving the interface between InAs NW and the dielectric layer is also valuable for other III-V NW devices.

Substitution effect and charge transport properties in organic field-effect transistors (OFETs) of simply functionalized carbazole derivatives

Development of low cost, easy-preparation and good performance organic semiconductors is in high demand for the practical application of organic field-effect transistors (OFETs). Even though the π-extended carbazole derivatives have been intensively studied in OFETs, the application potential of simple carbazole derivatives, i.e., owning simple substituents directly at carbazole backbone, remains unclear. In this work, we designed and synthesized a series of carbazole derivatives with simple phenyl or thienyl functionalization directly at 2,7- or 2,6-positions, respectively. The photophysical and electrochemical properties, together with their theoretical frontier molecular orbitals and energy levels were investigated. The molecular conformations and packing structures in the solid state of these molecules were understood by single-crystal structure analysis. In addition, single-crystal based OFETs were fabricated to explore their intrinsic charge transporting properties, in which the 2,7-diphenyl modified carbazole derivative showed hole-transporting mobilities up to 0.16 cm2 V−1 s−1. Our study not only proves that simply functionalized carbazoles have great potentials to act as easy-preparation high-performance p-type semiconducting materials, but also illustrates that 2,7-positon functionalization is more advantageous for balancing the molecular conformations and packing structures of carbazole derivatives to achieve good charge transport performance.

The influence of polymer dielectrics on electrical and sensory properties of organic field-effect transistors

The influence of polymer dielectrics on electrical and sensory properties of organic field-effect transistors

Intrinsic performance limits of extremely scaled field-effect transistors based on MX2 (M = {Zr, Hf}, X = {S, Se}) nanoribbons

We investigate the MX2 (M = {Hf, Zr}, X = {S, Se}) transition metal dichalcogenides patterned into armchair (AC) and zigzag (ZZ) nanoribbons (NRs) as potential channel materials in future logic field-effect devices. Ab initio quantum transport simulations are employed to assess the electronic, transport, and ballistic field-effect transistor (FET) properties of devices with such quasi-one-dimensional channels. We report a non-monotonic scaling behavior of MX2NR properties due to strong quantum confinement effects, which is reflected in a strong dependence of the ON-state current (ION) of MX2NR FETs on the nanoribbon configuration. The ∼2 nm-wide HfSe2 and ZrSe2 AC-PFETs have the highest ION of up to 2.6 mA/μm at 10 nA/μm OFF-state current. Surprisingly, MX2NR ZZ-NFETs exhibit a current increase of up to 70% when channel width is scaled down, with ION reaching 2.2 mA/μm in ∼2 nm-wide devices. The high ON-state performance is a direct consequence of high carrier injection velocity, which is explained by analyzing the band structure, transmission, and density of states. We demonstrate that nanostructured MX2 materials can be promising candidates for future logic transistors based on multi-nanowire architectures.

Ferroelectric field effect transistors based on two-dimensional CuInP2S6 (CIPS) and graphene heterostructures

Heterostructures of two-dimensional (2D) materials comprise clean van der Waals (vdW) interfaces that can facilitate charge or energy transfer. Recently, the 2D ferroelectric CuInP2S6 (CIPS) has been integrated with graphene and other 2D materials to realize potentially novel low energy electronic devices. However, the influence of 2D CIPS on the properties of graphene and doping across the vdW interface has not been studied in detail. Here, we study graphene field effect transistors (FETs) with CIPS as the top gate. We find that CIPS leads to modulation of the graphene Fermi level due to local doping. We also find polarization-induced hysteresis in CIPS-gated graphene FETs. Electrical transport measurements from 50 to300 K show that above 200 K, the ferroelectric response decreases. As a result, the hysteresis voltage windows in the graphene ferroelectric FETs (FeFET) transfer curves decrease above 200 K. Our results show that interfacial remote doping affects the macroscopic polarization and performance of CIPS-based graphene FeFETs.Graphical abstractHighlightsThis research studies the temperature-dependent local doping across a vdW ferroelectric/2D channel interface that affects the transport properties of ferroelectric field effect transistors (FeFETs).Experimental findings showed ferroelectric polarization switching-based hysteresis in CuInP2S6-gated graphene FeFETs.DiscussionvdW ferroelectrics that can be scaled to atomic layer thicknesses are useful for miniaturised low energy electronics.Understanding the interface charge or energy transfer in vdW ferroelectrics is essential for their integration into current or future technologies.

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and correlations of such hybrid devices strongly depend on the quality of the materials via chemical vapor deposition (CVD) process, their interfaces and contact properties. However, detailed electronic transport and correlation properties of the 2D semiconductor field-effect transistor (FET) with vdW graphene contacts for understanding mobility limiting factors and metal-insulator transition properties are not explored. Here, we investigate electronic transport in scalable all-2D CVD-grown molybdenum disulfide (MoS2) FET with graphene contacts. The Fermi level of graphene can be readily tuned by a gate voltage to enable a nearly perfect band alignment and, hence, a reduced and tunable Schottky barrier at the contact with good field-effect channel mobility. Detailed temperature-dependent transport measurements show dominant phonon/impurity scattering as a mobility limiting mechanisms and a gate-and bias-induced metal-insulator transition in different temperature ranges, which is explained in light of the variable-range hopping transport. These studies in such scalable all-2D semiconductor heterostructure FETs will be useful for future electronic and optoelectronic devices for a broad range of applications.

Atomically Precise Graphene Nanoribbon Transistors with Long-Term Stability and Reliability.

Atomically precise graphene nanoribbons (GNRs) synthesized from the bottom-up exhibit promising electronic properties for high-performance field-effect transistors (FETs). The feasibility of fabricating FETs with GNRs (GNRFETs) has been demonstrated, with ongoing efforts aimed at further improving their performance. However, their long-term stability and reliability remain unexplored, which is as important as their performance for practical applications. In this work, we fabricated short-channel FETs with nine-atom-wide armchair GNRs (9-AGNRFETs). We revealed that the on-state (ION) current performance of the 9-AGNRFETs deteriorates significantly over consecutive full transistor on and off logic cycles, which has neither been demonstrated nor previously considered. To address this issue, we deposited a thin ∼10 nm thick atomic layer deposition (ALD) layer of aluminum oxide (Al2O3) directly on these devices. The integrity, compatibility, electrical performance, stability, and reliability, of the GNRFETs before and/or after Al2O3 deposition were comprehensively studied. The results indicate that the observed decline in electrical device performance is most likely due to the degradation of contact resistance over multiple measurement cycles. We successfully demonstrated that the devices with the Al2O3 layer operate well up to several thousand continuous full cycles without any degradation. Our study offers valuable insights into the stability and reliability of GNR transistors, which could facilitate their large-scale integration into practical applications.

Influence of High-κ Dielectrics Integration on ALD-Based MoS2 Field-Effect Transistor Performance.

The integration of high-κ dielectrics on MoS2 field-effect transistors (FETs) is essential for the realization of MoS2 in ultrascaled nanoelectronic devices and circuits. Most studies covering this topic are based on exfoliated MoS2 flakes or chemical vapor deposition (CVD) grown MoS2 films, whereas other techniques, such as atomic layer deposition (ALD), are also gaining attention for the growth of MoS2 in recent years. In this work, we grow large-area MoS2 by means of plasma-enhanced (PE-)ALD and evaluate the influence of high-κ dielectrics on the properties of ALD-based MoS2 FETs through electrical characterization combined with surface-chemical and high-resolution scanning transmission electron microscopy (HR-STEM) analyses. We grow HfO x , AlO x , or both by means of PE-ALD or thermal ALD on our fabricated devices and show that, in addition to the dielectric constant, three other major parameters related to the processing of the dielectrics can simultaneously affect the MoS2 FET electrical characteristics and govern its doping. These parameters are the stoichiometry of the dielectric, its carbon impurity content, and the degree to which the MoS2 surface oxidizes upon the dielectric growth. When grown at 100 °C, our HfO x films are oxygen-vacant whereas our AlO x films are oxygen-rich. In addition, carbon impurities are incorporated into the dielectrics at low deposition temperatures, being one of the likely causes of the MoS2 FET overall n-type performance in all of the studied cases. Our investigations also reveal that PE-ALD of HfO x or AlO x oxidizes the MoS2 surface, whereas thermal ALD AlO x leaves MoS2 almost intact. In this respect, if thermal ALD AlO x of proper thickness is grown between MoS2 and HfO x , it can reduce the degree to which the MoS2 surface oxidizes by HfO x and meanwhile improve the total dielectric constant, altogether leading to the most optimal electrical performance in ALD-based MoS2 FETs.

(Nanocarbons Division SES Young Investigator Award) Surface Chemistry of Nanocarbon Field-Effect Transistors: From Fundamental Physics to Biosensing

Conductive carbon nanomaterials are particularly well-suited to form field-effect biosensors (bioFETs) because they are stable in aqueous media and can be chemically coupled to biomolecules. Their reduced dimensionality, either 2D (graphene) or 1D (carbon nanotubes), is key to their sensitivity: because they are entirely surfaces, these materials present remarkable electrical transport properties that are easily altered by microscopic surface interactions. Biochemical processes occurring in close proximity to their surface can therefore be transduced as changes in their electrical conductance. Selectivity for specific biochemical events, however, must be engineered via functionalization of the nanomaterial, i.e. by modifying its surface with bioactive or biorecognition elements (e.g., antibodies, aptamers, enzymes, polymer layer). Our group recently analyzed a corpus of studies presenting graphene field-effect transistors (GFETs) as bioanalytical sensors for the quantitative detection of biomarkers in the form of nucleic acids, proteins, ions or small molecules [1]. We found a striking variance in the reported sensing performance between these studies, that could not be explained by controlling for differences in graphene material, analyte type and for evolution over the years. Our hypothesis is that the lack of microscopic control on the biointerface is likely the most important source of variation in such bioFETs, highlighting the critical need to improve our knowledge and control of the functionalization of nanocarbon materials.In this talk, I will discuss our work investigating the interplay between surface chemistry and electrical properties in nanocarbon field-effect transistors. In the first part, I will focus on covalent additions using aryldiazonium salts. I will review what we have learned on the fundamental physics of this chemistry from experiments and simulations on carbon nanotube devices [2-5], in particular on its disruptive character because of the formation of sp 3 defects in the carbon lattice. More recently, we investigated this same chemistry on GFET devices and observed a heterogeneous response in their electrical conductance. Aiming to solve this, we developed a novel approach to precisely trigger and stop the reaction in situ using the applied gate voltage [6], enabling unprecedented control on the functionalization rate and yield on GFETs. In the second part, I will describe our ongoing efforts to characterize and control the biofunctionalization of GFETs through non-covalent pyrene derivatives, using a combination of electrical measurements, microscopy and spectroscopy techniques, and theoretical simulations. Finally, I will discuss our ongoing translational projects in oncology, on adapting nanocarbon-based bioFETs in cancer diagnostics applications.[1] Béraud et al, Analyst 146 (2), 403-428 (2021)[2] Bouilly et al, Applied Physics Letters 101 (5), 053116 (2012)[3] Bouilly et al, ACS nano 9 (3), 2626-2634 (2015)[4] Bouilly et al, Nano Letters 16 (7), 4679-4685 (2016)[5] Côté et al, Physical Chemistry Chemical Physics 24 (7), 4174-4186 (2021)[6] Bazan et al, Nano Letters 22 (7), 2635-2642 (2022)

Photo-switching operation of MoS2 field effect transistor by photoisomerization of azobenzene in solution delivered on a microfluidic platform

Combining the photoisomerization of molecules with an electrical device is important for developing optoelectronic devices. Field effect transistors (FETs) with atomically thin channels are suitable for this purpose because the FET properties respond to chemical changes in molecules. Since the photoisomerization wavelength of the switching molecules can be tuned, complex logic operations can be realized if a specific molecule is delivered to the target FET of an integrated circuit. However, conventional techniques for transferring molecules, such as drop casting and sublimation, cannot efficiently realize this goal. In this study, we fabricated a MoS2 FET device combined with a microfluidic platform, wherein the MoS2 channel was in contact with the flow of an azobenzene solution in isopropyl alcohol as the solvent. UV radiation (365 nm) and thermal relaxation realize the cycle of trans- and cis-azobenzene states and the switching of the substantial FET properties. This study demonstrated the feasibility of using the solution for optical switching of the MoS2-FET, which can realize quick phase changes in the molecule and the delivery of the molecule to the target FET by a microfluidic platform.

The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film

The objective of this paper is to evaluate the effect of a nanostructured C-Pd film deposited in the gate area of a field-effect transistor (FET) with a carbon–palladium composite gate (C-Pd/FET) on the hydrogen-sensing properties of the transistor. The method of preparing a field-effect transistor (FET) with a C-Pd film deposited as a gate and the properties of such a transistor and the film itself are presented. The C-Pd film deposited by PVD method on the gate area serves as an active layer. The PVD process was carried out in a dynamic vacuum of 10−5 mbar from two separated sources—one containing fullerenes (C60) and the other containing palladium acetate. Scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS, EDX) and electrical property studies were used to the characterize C-Pd films and FET/C-Pd structures. SEM observations revealed the topography of C-Pd films and FET/C-Pd transistors. EDS/EDX microanalysis was applied to visualize the arrangement of elements on the studied surfaces. The changes in electrical properties (resistance and relative resistance) due to the presence of hydrogen were studied in a designed and computerized experimental set-up. The enhanced properties of the FET/C-Pd transistor are demonstrated in terms of hydrogen detection.

Inter-Oligomer Interaction Influence on Photoluminescence in Cis-Polyacetylene Semiconductor Materials.

Semiconducting conjugated polymers (CPs) are pivotal in advancing organic electronics, offering tunable properties for solar cells and field-effect transistors. Here, we carry out first-principle calculations to study individual cis-polyacetylene (cis-PA) oligomers and their ensembles. The ground electronic structures are obtained using density functional theory (DFT), and excited state dynamics are explored by computing nonadiabatic couplings (NACs) between electronic and nuclear degrees of freedom. We compute the nonradiative relaxation of charge carriers and photoluminescence (PL) using the Redfield theory. Our findings show that electrons relax faster than holes. The ensemble of oligomers shows faster relaxation compared to the single oligomer. The calculated PL spectra show features from both interband and intraband transitions. The ensemble shows broader line widths, redshift of transition energies, and lower intensities compared to the single oligomer. This comparative study suggests that the dispersion forces and orbital hybridizations between chains are the leading contributors to the variation in PL. It provides insights into the fundamental behaviors of CPs and the molecular-level understanding for the design of more efficient optoelectronic devices.

Reduced interface effect of proton beam irradiation on the electrical properties of WSe2/hBN field effect transistors

Two-dimensional transition metal dichalcogenide (TMDC) semiconductors are emerging as strong contenders for electronic devices that can be used in highly radioactive environments such as outer space where conventional silicon-based devices exhibit nonideal characteristics for such applications. To address the radiation-induced interface effects of TMDC-based electronic devices, we studied high-energy proton beam irradiation effects on the electrical properties of field-effect transistors (FETs) made with tungsten diselenide (WSe2) channels and hexagonal boron-nitride (hBN)/SiO2 gate dielectrics. The electrical characteristics of WSe2 FETs were measured before and after the irradiation at various proton beam doses of 1013, 1014, and 1015 cm−2. In particular, we demonstrated the dependence of proton irradiation-induced effects on hBN layer thickness in WSe2 FETs. We observed that the hBN layer reduces the WSe2/dielectric interface effect which would shift the transfer curve of the FET toward the positive direction of the gate voltage. Also, this interface effect was significantly suppressed when a thicker hBN layer was used. This phenomenon can be explained by the fact that the physical separation of the WSe2 channel and SiO2 dielectric by the hBN interlayer prevents the interface effects originating from the irradiation-induced positive trapped charges in SiO2 reaching the interface. This work will help improve our understanding of the interface effect of high-energy irradiation on TMDC-based nanoelectronic devices.

ReS2-MoS2 heterojunction nanotube FET with superlattice structures for ultrasensitive detection of miRNA

Ultrasensitive detection of cancer biomarkers holds immense importance in facilitating the early diagnosis and treatment of cancer. Compared to conventional detection techniques, field-effect transistor (FET) biosensors have demonstrated substantial potential in achieving sensitive detection of cancer biomarkers. However, the ultrasensitive FET still remains great challenges due to the limited electron transport capacity and sensitivity of channel materials. Herein, we employed rhenium disulfide-molybdenum disulfide nanotube (ReS2-MoS2 NT) featuring superlattice structures as channel materials in FET biosensors for the highly sensitive detection of cancer biomarker miRNA-21. More concretely, ReS2-MoS2 NT featuring superlattice structures was synthesized using the anodic aluminum oxide (AAO) template sacrifice method and atomic layer deposition (ALD) method. The electrical properties of single ReS2-MoS2 NT FET were regulated by adjusting the total layers and number of heterojunction interfaces, and the optimal number of heterojunction interfaces of 7 was obtained. Finally, FET biosensors utilizing the network ReS2-MoS2 NT as the channel materials were fabricated and exhibited remarkable sensitivity in detecting miRNA-21 under an external light source. The linear range for detection spanned from 10 aM to 1 nM, with an exceptionally low detection limit of 2.1 aM. This study holds promise for replacing current channel materials and surpassing the detection threshold of cancer biomarkers in the future.

Design of Pentacene Thin-Film Transistor Based Hydrogen Gas Sensor with High-K Dielectric Materials for High Sensitivity

Electrical properties of an organic field-effect transistor were modelled in top gate top contact (TGTC) geometry and H2 gas sensors were designed for increased sensitivity based on the structure. Safety concerns related to hydrogen usage must be addressed; these hazardous characteristics include a wide flammable range (4%–75%) that results in a rapid burning velocity, a low minimum ignition energy (0.017 mJ), a high heat of combustion (143 kJ g−1), and the high diffusivity of hydrogen gas (0.61 cm2 s−1 in the air). These characteristics make it impossible to control hydrogen combustion after a specific time. All simulations were performed in the Silvaco TCAD ATLAS tool. We analysed the driving principle of gas sensors and introduced gas sensing properties in OFET using platinum metal at the gate electrode for H2 gas detection. IOFF, ION, and VTH are sensitivity parameters that alter when the metalwork function of the gate changes with respect to the gas present on it. The designed sensor was analysed for different dielectric materials. Results demonstrate that the increase in sensitivity for OFET-based H2 sensors is 73.4%, 80.7%, 90.5%, and 95.6% when the work function changes by 50, 100, 150, and 200 meV for Pt gate electrodes with an increase in dielectric value of insulating layer from SiO2 (3.9) to La2O3 (27). Results were compared with the In1-xGaxAs CGNWFET-based H2 sensor as the work function varies at 200 meV,the sensitivity enhancement with OFET-based H2 sensors is 8.09%.

Design of power efficient and reliable hybrid inverter approach based 11 T SRAM design using GNRFET technology

Designing a power efficient and high-speed static random-access memory (SRAM) cell with improved noise stability using traditional complementary metal oxide semiconductor (CMOS) devices is an arduous task. Owing to balanced electrical properties of graphene nanoribbon field-effect transistor (GNRFET), its capability to realize high performance SRAM cells need a keen exploration. This article proposes an 11-transistor GNRFET SRAM cell which deploys hybrid inverter scheme. The hybrid inverter scheme encompasses two distinct inverters, based on stacked transistors and Schmitt trigger (ST) techniques. The simulations conducted using 16 nm GNRFET model in HSPICE simulator show that proposed SRAM cell has write power, hold power, read power, write static noise margin, hold static noise margin, read static noise margin, write delay and read delay of 0.445 nW, 0.978 µW, 1.8 nW, 225 mV, 222.8 mV, 225.1 mV, 24 pS and 49.6 pS, respectively. The results obtained for proposed SRAM cell have been found to be encouraging in contrast to previously reported SRAM cells implemented using 16 nm GNRFET model. Besides this, the effect of variation in various parameters of GNRFET on performance of proposed SRAM cell has been investigated in this article. The outstanding performance results of SRAM makes its suitable for developing high performance memories devices for biomedical digital gadgets, internet of things (IoT), artificial intelligence (AI) and smart agricultural applications.

In-situ methyl red doped MoS2 field effect transistor made by atomically thin MoS2 channel

Here we present the effects of Methyl Red (MR) doping on the electrical properties of the MoS2 field effect transistor (FET) in in-situ experimental system where the doping and electrical measurement are carried out in a single ultra-high vacuum chamber. A single-layered MoS2 flake was used as channel material for the FET preparation. N-type doping by MR was confirmed by the left shift of threshold voltage (Vth) and the surface vibrational change measured by Raman spectroscopy. The n-doping by MR is implied by the Fermi level shift towards greater binding energy with MR coverage, as proven by an X-ray photoelectron spectroscopy (XPS) measurement. It is estimated from XPS that the MoS2-FET device may detect the doping effect from the sub-monolayer MR. MR was detected on the MoS2 surface by the Time-of-Flight Secondary Ionization Mass Spectroscopy (ToF-SIMS). The findings may pave the way for innovations in electronic device design, with potential implications for fields ranging from nanoelectronics to sensor technology.

High-Transconductance and Low-Leakage Current Single Aluminum Nitride Nanowire Field Effect Transistor

This study presents electrical transport properties of a catalyst-free grown single aluminum nitride nanowire field effect transistor (AlNNW-FET) exhibiting a very high transconductance of 26.9 pS, high on/off current ratio of 795.9, high conductivity of 9.8 x 10-4 Ω-1.cm-1, and a very low leakage current of 10 pA. The conductivity of AlN nanowire is two orders of magnitude higher than the reported studies. The AlNNW-FET reveals a dominant p-type conductivity. The p-type conductivity can be attributed to aluminum vacancies and complexes composed of Al vacancies and oxygen impurities. In consequence, the fabricated AlNNW-FET with high-performance, cost-effectiveness, and high-power efficiency is very well suited for use in low power and high temperature nanoelectronic and piezoelectric sensor applications, as well as integrated electro-optical devices including optomechanical devices and pyroelectric photodetectors.

The interfacial properties of 2D metal-monolayer blue phosphorene heterojunctions and transport properties of their field-effect transistors

Monolayer blue phosphorene (BlueP) has attracted much interest as a potential channel material in electronic devices. Searching for suitable two-dimensional (2D) metal materials to use as electrodes is critical to fabricating high-performance nanoscale channel BlueP-based field effect transistors (FETs). In this paper, we adopted first-principles calculations to explore binding energies, phonon calculations and electronic structures of 2D metal-BlueP heterojunctions, including Ti3C2-, NbTe2-, Ga(110)- and NbS2-BlueP, and thermal stability of Ti3C2-BlueP heterojunction at room temperature. We also used density functional theory coupled with the nonequilibrium Green function method to investigate the transport properties of sub-5 nm BlueP-based FETs with Ti3C2-BlueP electrodes. Our calculated results indicate that Ti3C2-BlueP has excellent thermal stability and may be used as a candidate electrode material for BlueP-based FETs. The double-gate can more effectively improve the device performance compared with the single-gate. The estimated source leakage current of sub-5 nm transistors reaches up to 369 µA µm−1, which is expected to meet the requirements of the international technology roadmap for semiconductors for LP (low-power) devices. Our results imply that 2D Ti3C2 may act as an appropriate electrode material for LP BlueP-based FETs, thus providing guidance for the design of future short-gate-length BlueP-based FETs.