High-Transconductance and Low-Leakage Current Single Aluminum Nitride Nanowire Field Effect Transistor

Abstract

This study presents electrical transport properties of a catalyst-free grown single aluminum nitride nanowire field effect transistor (AlNNW-FET) exhibiting a very high transconductance of 26.9 pS, high on/off current ratio of 795.9, high conductivity of 9.8 x 10-4 Ω-1.cm-1, and a very low leakage current of 10 pA. The conductivity of AlN nanowire is two orders of magnitude higher than the reported studies. The AlNNW-FET reveals a dominant p-type conductivity. The p-type conductivity can be attributed to aluminum vacancies and complexes composed of Al vacancies and oxygen impurities. In consequence, the fabricated AlNNW-FET with high-performance, cost-effectiveness, and high-power efficiency is very well suited for use in low power and high temperature nanoelectronic and piezoelectric sensor applications, as well as integrated electro-optical devices including optomechanical devices and pyroelectric photodetectors.