Field-effect Passivation Research Articles

An insight into effect of front surface field on the performance of interdigitated back contact silicon heterojunction solar cells

The development of interdigitated back contact silicon heterojunction has been flourishing in the field of solar cells. The front surface field has a decisive influence on the electrical field effect passivation of interdigitated back contact silicon heterojunction solar cells, and the effect of passivation layers on the performance of solar cells needs to be clarified. In this study, the two-dimension TCAD models of the doped n+-a-Si: H layer and SiNx with a fixed charge layer were established by the Sentaurus code, respectively. The space charge density and electric field intensity, carrier transportation, and distribution of current density were numerically analyzed to evaluate the effect of these two front surfaces on the performance of interdigitated back contact silicon heterojunction solar cells. The results show that for SiNx, the root cause of the field passivation is the surface fixed charge density. The combination of the doping concentration and layer thickness directly affects the field passivation of n+-a-Si: H. Based on the intuitive carrier transport vector, the selective transportation of the carrier near the surface is proved by the front surface field, which effectively inhibits the recombination. The current density distribution on the cross-section reveals that a strong front surface field is an effective way to reduce the internal recombination in particular. Considering practical operating conditions, a doping concentration of 1e20 cm−3, in combination with 7 nm layer thickness, potentially improves the front surface field of n+ a-Si: H leading to the maximum conversion efficiency of 27.41%, with the voltage increased by 32.8 mV and the fill factor reaching 86.84%.

Versatility of Nanocrystalline Silicon Films: from Thin-Film to Perovskite/c-Si Tandem Solar Cell Applications

Doped hydrogenated nanocrystalline (nc-Si:H) and silicon oxide (nc-SiOx:H) materials grown by plasma-enhanced chemical vapor deposition have favourable optoelectronic properties originated from their two-phase structure. This unique combination of qualities, initially, led to the development of thin-film Si solar cells allowing the fabrication of multijunction devices by tailoring the material bandgap. Furthermore, nanocrystalline silicon films can offer a better carrier transport and field-effect passivation than amorphous Si layers could do, and this can improve the carrier selectivity in silicon heterojunction (SHJ) solar cells. The reduced parasitic absorption, due to the lower absorption coefficient of nc-SiOx:H films in the relevant spectral range, leads to potential gain in short circuit current. In this work, we report on development and applications of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) from material to device level. We address the potential benefits and the challenges for a successful integration in SHJ solar cells. Finally, we prove that nc-SiOx:H demonstrated clear advantages for maximizing the infrared response of c-Si bottom cells in combination with perovskite top cells.

Modulation of Field-Effect Passivation at the Back Electrode Interface Enabling Efficient Kesterite-Type Cu2ZnSn(S,Se)4 Thin-Film Solar Cells.

For further efficiency improvement in kesterite-type Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, it is essential to address the carrier recombination issue at the back electrode interface (BEI) caused by the undesirable built-in potential orientation toward an absorber as an n-MoSe2 interfacial layer formed. In this regard, back surface field (BSF) incorporation, i.e., field-effect passivation, shows promise for dealing with this issue due to its positive effect in decreasing recombination at the BEI. In this study, the BSF was realized with the p-type conduction transition in interfacial layer MoSe2 by incorporating Nb into the back electrode. The BSF width can be tuned via modulating the carrier concentration of the absorber, which has been demonstrated by capacitance-voltage characterization. A beyond 7% efficiency BSF-applied CZTSSe solar cell is prepared, and the effects of a tunable BSF and the mechanism underpinning device performance improvement have been investigated in detail. The wider BSF distribution in the absorber induces a decrease in reverse saturation current density (J0) due to the stronger BSF effect in suppressing BEI recombination. As a result, an accompanying increase in open-circuit voltage (VOC) and short-circuit current density (JSC) is achieved as compared to the BSF-free case. This study offers an alternative strategy to address the BEI recombination issue and also broadens the interface passivation research scope of potentially competitive kesterite solar cells.

Analysis of passivation property using thin Al2O3 layer and simulation for realization of high-efficiency TOPCon cell

Conventional p–n junction solar cells exhibit good thermal stability but poor carrier selectivity. The main aim of this study was to achieve improved passivation along with carrier-selective contact for a solar cell having a tunnel oxide passivated contact (TOPCon) structure. To this end, we attempted to optimize the polysilicon (poly-Si) layer deposited on an ultrathin (~1.3 nm) SiO2 tunnel oxide layer to achieve high carrier lifetime and low recombination. We observed the passivation properties under varied thicknesses of the poly-Si layer and the phosphine (PH3) gas flow rate at three different annealing temperatures. Our experimental approach was able to achieve the best passivation properties by use of a moderately thin poly-Si layer. The poly-Si layer thickness was varied from 55 to 113 nm, and the PH3 flow rate was varied from 10 to 80 sccm at three different annealing temperatures in the range of 800–950 °C. The 113-nm-thick poly-Si layer was able to yield an implied open-circuit voltage (i-VOC) of 733 mV along with a very low recombination current density (J0) of 5.2 fA/cm2 at a PH3 flow rate of 40 sccm and post-deposition annealing temperature of 900 °C. A higher annealing temperature resulted in damage to the substrate, which in turn led to poor passivation; hence, optimization of this temperature was necessary. The passivation properties were further improved via the deposition of a thin (10-nm thick) Al2O3 layer on one side (i.e., front side) of the symmetric cell structure. This deposition caused a decrease in J0 to 2.5 fA/cm2 and an increase in i-VOC to 742 mV. These results are attributed to a decrease in the number of interfacial defects, promoted formation of a carrier collector layer, and good field-effect passivation. We performed a simulation study for the realization of a TOPCon solar cell and employed therein the experimentally determined parameters, which yielded highly promising cell results. Our proposed simple and cost-effective approach has high potential for future large-scale production of high-efficiency TOPCon solar cells.

Optimization of TOPCon Structured Solar Cell Using AFORS-HET

The tunnel oxide passivated contact (TOPCon) structured solar cell, improved version of first-generation PERT solar cell, delivers the highest power conversion efficiency, and is the most commercially available. The first-generation solar cell still suffers from recombination losses, which strongly impacts the conversion efficiency of the cell. To reduce the losses, efforts need to be made to suppress the recombination by passivating the rear junction using a dielectric layer, tunneling layer, along with an excellent field-effect passivation. The tunneling current is strongly dependent on the thickness of the dielectric layer, i.e., an increase in SiO2 thickness results in the decrease of the tunneling current by more than one magnitude. Although raising the doping in the n+-Si layer enhances the tunneling probability of an electron, which allows for a thicker layer for better passivation. The paper discusses the results of a numerical simulation tool to study the impact of surface recombination on the performance of TOPCon solar cells. The solar cell is simulated at different surface recombination velocity observing typical solar cell parameters with varying tunnel oxide (SiO2) thickness and doping of field-effect passivation (n+-Si) to obtain the optimized value. Optimization of SiO2/n+-Si backside structure is essential to obtain a structure reaching a high theoretical efficiency.

Effective suppression of nano-textured black silicon surface recombination channels through sputtered aluminum oxide: A comparison study with ALD grown films.

This accepted manuscript was withdrawn on 2 November 2020 on the author's request.In this work, the effective surface passivation of nano-textured silicon (NT-Si) using sputtered aluminum oxide (AlOx) films has been demonstrated and established a comparison with atomic layer deposition (ALD) grown AlOx films. Silver assisted wet chemical etching (SAWCE) is used to prepare optically black NT-Si. Sub-wavelength size features of NT-Si surface optimized to control the surface defect states which act as trap centres for charge carriers and proportional to the surface area. Sputtered and ALD grown AlOx films used to passivate the NT-Si surfaces are analyzed primarily in context of available trap centres. The AlOx/NT-Si interface is quantified by the density of interface trap states (Dit) and the total fixed charge (Qf) that correlated with effective surface recombination velocity (Seff) of carriers. The estimated Dit and Qf of sputtered AlOx films are ~4 x 1011 eV-1cm-2 and ~7 x 1012 cm-2, respectively which results in the Seff of ~37 cm/s due to the field-effect passivation. While the Dit and Qf of ALD grown AlOx films are 1.1 x 1011 eV-1cm-2 and ~7.8 x 1012 cm-2 results in the Seff of ~22 cm/s owing to both the chemical and field-effect passivation.

Evolution of PERC from Al-BSF: optimization based on root cause analysis

Passivated emitter rear contact (PERC) solar cell involves upgraded adaptation of technology over the existing silicon wafer-based aluminium back surface field (Al-BSF) solar cell. The lower efficiency of Al-BSF is caused by a few drawbacks e.g. higher rear surface recombination and weaker electric field at the rear surface. These technical shortcomings can be mitigated by incorporating field-effect passivation (FEP) layer viz. aluminium oxide (Al2O3) at the rear surface with a capping layer of SiNX on it. Conventionally two new processing steps utilizing two expensive equipments, green laser (532 nm) for laser ablation of the FEP and SiNX capping layer stack at the rear surface and single side etcher for rear side polishing of wafer are used for manufacturing of PERC cells. In this paper, we have shown that instead of these two new expensive processing equipments we can use the IR laser (1024 nm) and RIE etcher, which are commonly available for Al-BSF manufacturing line, for the fabrication of PERC solar cells. Using p-type wafers of rather modest quality (minority carrier lifetime of ≥10 µs) we have demonstrated improvement of the efficiency from 18.71 to 19.62% and enhancements in VOC and JSC from 628 to 646 mV and 38.59 mA/cm2 to 39.82 mA/cm2, respectively. A thorough root-cause analysis has been carried out to optimize the two new approaches within the existing Al-BSF line for the fabrication of PERC solar cell.

Influence of the Carrier Selective Front Contact Layer and Defect State of a-Si:H/c-Si Interface on the Rear Emitter Silicon Heterojunction Solar Cells

In this research, simulations were performed to investigate the effects of carrier selective front contact (CSFC) layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface in silicon heterojunction (SHJ) solar cells employing the Automat for Simulation of hetero-structure (AFORS-HET) simulation program. The results demonstrated the effects of band offset determined by band bending at the interface of the CSFC layer/passivation layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field effect passivation. Furthermore, it increased the selectivity of contact. In the experimental cell, nc-SiOx:H was used as the CSFC layer, where efficiency of the SHJ solar cell was 22.77%. Our investigation shows that if a SiOx layer passivation layer is used, the device can achieve efficiency up to 25.26%. This improvement in the cell is mainly due to the enhancement in open circuit voltage (Voc) because of lower interface defect density resulting from the SiOx passivation layer.

Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition

Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, the annealing time to activate the surface passivation is found to be significantly shorter. The best surface saturation current densities (J0s) or surface recombination velocities (Seff) are 6 and 9 fA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> or 0.6 and 1.5 cm/s for n- and p-type Si, respectively. We correlate the surface passivation with the negative fixed charge density (Qfix; field-effect passivation) and the interface defect density (Dit; chemical passivation). It turns out that a high Qfix is present, irrespective of the utilized ALD-method, deposition temperature, or post-annealing, whereas low Dit is only achieved for plasma-enhanced ALD at low temperatures. A critical H-density of ~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> is identified as a necessary but not sufficient condition for excellent surface passivation. Finally, contact resistivities are measured to investigate the possibility of using ALD-Ga2O3 as passivating contact material. In order to understand the current-voltage measurements, the energetic positions of the band edges and the Fermi level are determined by ultraviolet photoelectron spectroscopy and Kelvin probe.

Oxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells

Author(s): Werner, F; Veith-Wolf, B; Spindler, C; Barget, MR; Babbe, F; Guillot, J; Schmidt, J; Siebentritt, S | Abstract: Copper-indium-gallium-diselenide (CIGS) thin-film solar cells suffer from high recombination losses at the back contact and parasitic absorption in the front-contact layers. Dielectric passivation layers overcome these limitations and enable an efficient control over interface recombination, which becomes increasingly relevant as thin-film solar cells increase in efficiency and become thinner to reduce the consumption of precious resources. We present the optoelectronic and chemical interface properties of oxide-based passivation layers deposited by atomic layer deposition on CIGS. A suitable postdeposition annealing removes detrimental interface defects and leads to restructuring and oxidation of the CIGS surface. The optoelectronic interface properties are very similar for different passivation approaches, demonstrating that an efficient suppression of interface states is possible independent of the metal used in the passivating oxide. If aluminum oxide (Al2O3) is used as the passivation layer we confirm an additional field-effect passivation due to interface charges, resulting in an efficient interface passivation superior to that of a state-of-the-art cadmium-sulfide (CdS) buffer layer. Based on this chemical interface model we present a full-area rear-interface passivation layer without any contact patterning, resulting in a 1% absolute efficiency gain compared to a standard molybdenum back contact.

Surface related degradation phenomena in P-type multi-crystalline silicon at elevated temperature and illumination

As a non-negligible part of light and elevated temperature induced degradation (LeTID), the studies of surface related degradation are rare, and the complex mechanism hinders the research in this field. In this paper, the degradation behaviors of passivation quality on the surface of P-type multi-crystalline silicon were mainly analyzed during LeTID. Results shown that effective minority carrier lifetime of passivated mc-Si wafers decreased in the range of 20–50% after it got to the full degraded during light soaking at 80 °C. The fixed charges at the interface between passivation layer and silicon bulk increased slightly after full degradation, which had little effect on field-effect passivation. Long-term illumination resulted in a certain increase in interface states density (Dit) in the bottom half of bandgap. According to the result that the increment of Dit of ungettered samples was higher than that of phosphorus diffusion gettered samples, it implied that the increase of interface defects might be caused by the diffuse of impurities in the bulk to the surface during the process of LeTID.

Plasmonic Hot‐Electron‐Induced Control of Emission Intensity and Dynamics of Visible and Infrared Semiconductor Quantum Dots

AbstractPlasmonic hot‐electron‐assisted control of emission intensities and dynamics of CdSe/ZnS and infrared PbS quantum dots are studied. This is done by exploring the impact of Au/Si and Ag/Si Schottky junctions on the decay rates of such quantum dots when these junctions are placed in close vicinity of a Si/Al oxide charge barrier, forming metal‐oxide plasmonic metafilms. Such structures are used to investigate how metal‐dependent distributions of hot electrons and their capture via Schottky junctions can lead to suppression of the defect environments of quantum dots, offering a novel platform wherein off‐resonant (non‐Purcell) plasmonic processes are used to control exciton dynamics. These results show that Ag metafilms can enhance the emission of CdSe/ZnS quantum dots and elongate their lifetimes more than Au metafilms. This highlights the more efficient nature of Ag/Si Schottky junctions for hot electron excitation and capture. These results also show that such junctions can significantly suppress the nonradiative decay rates of PbS quantum dots at frequencies far from the plasmon resonances. These results demonstrate a field‐effect passivation of quantum dot defects via entrapment of hot electrons and control of emission intensities and dynamics of quantum dots via the nearly frequency‐independent electrostatic field of such electrons.

Backside passivation for improving the noise performance in CMOS image sensor

Great efforts have been made in the past few years to reduce the white pixel noise in complementary metal–oxide–semiconductor (CMOS) image sensors. As a promising approach, the surface passivation method focusing on the field-effect passivation has been studied in this work. Based on the metal–oxide–semiconductor capacitor device model, electrical measurement and analysis have been performed for characterizing the charge distribution in the system. The relationship between the flat band voltage and the white pixel performance has been set up, and the proposed passivation method that controls Si or SiO2 interface charge or traps has been proved effective in lowering the white pixel noise, which can be very attractive in improving the performance of CMOS image sensors for high-resolution and high-sensitivity applications.

Sub-2 cm/s passivation of silicon surfaces by aprotic solutions

Minimizing recombination at semiconductor surfaces is required for the accurate determination of the bulk carrier lifetime. Proton donors, such as hydrofluoric acid and superacids, are well known to provide highly effective short-term surface passivation. We demonstrate here that aprotic solutions based on bis(trifluoromethanesulfonyl)methane (TFSM) in hexane or pentane can also result in excellent passivation of (100)-orientation silicon surfaces. We show that the optimized TFSM-pentane passivation scheme can measure effective lifetimes up to 20 ms, with a surface recombination velocity of 1.7 cm s−1 at an excess carrier density of 1015 cm−3. Fitting injection-dependent lifetime curves requires chemical passivation and field effect passivation from a negatively charged layer with a charge density of 1010–1011 q cm−2. The slightly higher recombination velocity of 2.3 cm s−1 measured with TFSM-hexane can be explained by a lower charge density in the passivating layer, suggesting that the steric hindrance associated with the solvent size could play a role in the passivation mechanism. Finally, phosphorus nuclear magnetic resonance experiments confirm that TFSM-based solutions have Lewis acidity without being superacids, which opens up opportunities for them to be used in materials systems sensitive to superacidic environments.

An analytical approach for modeling of high-efficiency crystalline silicon solar cells with homo–hetero junctions

An analytical model based on charge neutrality principle and energy band diagram analysis is investigated to model a new structure of silicon heterojunction solar cell, which encompasses both homo and heterojunctions. In the analysed structure, a thin (p+)c-Si and a thin (n+)c-Si layers are used at front and back surfaces of (n)c-Si substrate respectively. The purpose of incorporating these layers is to reduce the solar cell output parameters sensitivity to a-Si:H/c-Si interface defect densities, increase the open circuit voltage (Voc) and increase the fill factor (FF). Since (n)c-Si silicon bulk becomes quasi neutral in the mentioned structure, charge neutrality equation can be separated as two independent equations for front and back surfaces. Solving charge neutrality equations, result in a-Si:H/c-Si interface potential, and subsequently charge concentration, electric field, surface recombination velocity, and open circuit voltage (Voc) calculation. Then, by adjusting doping concentration of the two additional layers, their effect on surface potential and energy band bending is studied. It is observed that when doping concentration of (p+)c-Si layer is increased from 1×1018cm−3 to 5×1019cm−3, the Voc drops by 15mV, and FF increases by 2.5%, while Voc and FF sensitivity to interface defects density is improved considerably. On the other hand, by (n+)c-Si layer insertion at back surface, in addition to decreasing sensitivity to interface defect densities in comparison to conventional SHJ silicon solar cell, Voc and FF are increased due to combination of high conductivity and enhancement of field effect passivation at back surface of solar cell. Moreover, when doping concentration of (n+)c-Si layer increases from 1×1018cm−3 to 5×1019cm−3Voc and FF increases from 680 mV and 71% to 740 mV and 82% respectively.

A density functional theory study on the passivation mechanisms of hydrogenated Si/Al2O3 interfaces

Amorphous aluminum oxide (Al2O3) films are known to provide a high-quality passivation on silicon (Si) surfaces which can result in an enhanced efficiency of Si-based solar cells. After deposition of Al2O3 on Si, a certain temperature treatment is needed to activate the highest surface passivation quality. When the applied temperature is exceeded by a certain level, the passivation quality degrades. This behavior is well known in the production of Si-based solar cells. In order to further elucidate the microscopic origin of passivation mechanisms and its interplay with thermal treatments, we investigate four different atomistic Si/Al2O3 interface models by means of density functional theory simulations. As interfacial hydrogen (H) is deemed to play a key role in Si/Al2O3 surface passivation mechanisms and its amount changes during thermal treatments, two of these models contain hydrogen in different amounts; the other two do not contain any hydrogen. The simulations show that both chemical passivation and field-effect passivation depend on the relative amount of hydrogen via partially competing mechanisms. The obtained results provide novel insights into the passivation mechanisms of Si/Al2O3 interfaces. The results are qualitatively compared to the thermally induced activation and degradation of the Si(100)/Al2O3 surface passivation known from experiments.

AlOx surface passivation of black silicon by spatial ALD: Stability under light soaking and damp heat exposure

Scientific breakthroughs in silicon surface passivation have enabled commercial high-efficiency photovoltaic devices making use of the black silicon nanostructure. In this study, the authors report on factors that influence the passivation stability of black silicon realized with industrially viable spatial atomic layer deposited (SALD) aluminum oxide (AlOx) under damp heat exposure and light soaking. Damp heat exposure conditions are 85 °C and 85% relative humidity, and light soaking is performed with 0.6 sun illumination at 75 °C. It is demonstrated that reasonably thick (20 nm) passivation films are required for both black and planar surfaces in order to provide stable surface passivation over a period of 1000 h under both testing conditions. Both surface textures degrade at similar rates with 5 and 2 nm thick films. The degradation mechanism under damp heat exposure is found to be different from that in light soaking. During damp heat exposure, the fixed charge density of AlOx is reduced, which decreases the amount of field-effect passivation. Degradation under light soaking, on the other hand, is likely to be related to interface defects between silicon and the passivating film. Finally, a thin chemically grown SiOx layer at the interface between the AlOx film and the silicon surface is shown to significantly increase the passivation stability under both light soaking and damp heat exposure. The results of this study provide valuable insights into surface passivation degradation mechanisms on nanostructured silicon surfaces and pave the way for the industrial production of highly stable black silicon devices.

Atomic level termination for passivation and functionalisation of silicon surfaces.

Chemical treatments play an essential role in the formation of high quality interfaces between materials, including in semiconductor devices, and in the functionalisation of surfaces. We have investigated the effects of hydrogen and fluorine termination of (100)-orientation silicon surfaces over a range of length scales. At the centimetre scale, lifetime measurements show clean silicon surfaces can be temporarily passivated by a short treatment in both HF(2%) : HCl(2%) and HF(50%) solutions. The lifetime, and hence surface passivation, becomes better with immersion time in the former, and worse with immersion time in the latter. At the nanometre scale, X-ray photoelectron spectroscopy and atomic force microscopy show treatment with strong HF solutions results in a roughened fluorine-terminated surface. Subsequent superacid-derived surface passivation on different chemically treated surfaces shows considerably better passivation on surfaces treated with HF(2%) : HCl(2%) compared to HF. Lifetime data are modelled to understand the termination in terms of chemical and field effect passivation at the centimetre scale. Surfaces passivated with Al2O3 grown by atomic layer deposition behave similarly when either HF(2%) : HCl(2%) or HF(50%) are used as a pre-treatment, possibly because of the thin silicon dioxide interlayer which subsequently forms. Our study highlights that chemical pre-treatments can be extremely important in the creation of high quality functionalised surfaces.

Field-effect passivation of metal/n-GaAs Schottky junction solar cells using atomic layer deposited Al2O3/ZnO ultrathin films

In this paper, a novel field-effect passivation technique is used to improve the photovoltaic properties of metal/n-GaAs Schottky junction solar cells. In this technique, a relatively large density of positive or negative fixed charges existing at the top surface of the dielectric thin films is used to create an electric field gradient to prevent the photogenerated charge carriers from recombining. Atomic layer deposition is used to grow high-quality Al2O3 and ZnO ultrathin films that are used as passivating materials. Electrical measurements demonstrate an improvement in both diodelike and photovoltaic properties of Schottky solar cells in the proposed stacked Al2O3/ZnO passivation structure compared to the single Al2O3 layer. This can be attributed to both higher equivalent capacitance/permittivity of the stacked passivation layer and increased density of negative fixed charges at the interface of the passivation layer and the semiconductor.

Improved Photoresponse in Association with a Synthesized Dielectric Material for Quantum Dots Solar Cells

A worldwide investigation is being carried out for improving the photoconversion efficiency of solar cells. Among all solar cells, quantum dots solar cell (QDSC) has proven as the best potential for photocurrent generator. The major focus of this research work is comparing the performance of QD based solar cells with and without the addition of synthesized dielectric nanomaterials for reducing recombination problems and higher the exciton generation. The selection of dielectric nanomaterial was carried out based on their good field-effect passivation, screened columbic attraction, enactment as a back reflector, and recombination inhibitor in solar cell. According to the above-mentioned factors lanthanum doped lead titanate Pb0.85La0.15TiO3 (PLT15) is a promising material for this research work. For improving the performance of QD based solar cells, the PLT15 paired mesoporous TiO2 electron transport layer (ETL) film was deposited onto fluorine-doped tin oxide (FTO) coated glass substrate using doctor blading technique followed by annealing the QD deposition onto the coated glass substrate was carried out via dipping of the glass into the QD solution for overnight. The QD used in this research work were namely – PbI3. Finally, the performance study was carried out which indicates that the introduction of dielectric material into the QDSC has proven to be as innovative and as well as efficient for improving the photocurrent conversion efficiency.