Evolution of PERC from Al-BSF: optimization based on root cause analysis

Abstract

Passivated emitter rear contact (PERC) solar cell involves upgraded adaptation of technology over the existing silicon wafer-based aluminium back surface field (Al-BSF) solar cell. The lower efficiency of Al-BSF is caused by a few drawbacks e.g. higher rear surface recombination and weaker electric field at the rear surface. These technical shortcomings can be mitigated by incorporating field-effect passivation (FEP) layer viz. aluminium oxide (Al2O3) at the rear surface with a capping layer of SiNX on it. Conventionally two new processing steps utilizing two expensive equipments, green laser (532 nm) for laser ablation of the FEP and SiNX capping layer stack at the rear surface and single side etcher for rear side polishing of wafer are used for manufacturing of PERC cells. In this paper, we have shown that instead of these two new expensive processing equipments we can use the IR laser (1024 nm) and RIE etcher, which are commonly available for Al-BSF manufacturing line, for the fabrication of PERC solar cells. Using p-type wafers of rather modest quality (minority carrier lifetime of ≥10 µs) we have demonstrated improvement of the efficiency from 18.71 to 19.62% and enhancements in VOC and JSC from 628 to 646 mV and 38.59 mA/cm2 to 39.82 mA/cm2, respectively. A thorough root-cause analysis has been carried out to optimize the two new approaches within the existing Al-BSF line for the fabrication of PERC solar cell.