Abstract
In this research, simulations were performed to investigate the effects of carrier selective front contact (CSFC) layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface in silicon heterojunction (SHJ) solar cells employing the Automat for Simulation of hetero-structure (AFORS-HET) simulation program. The results demonstrated the effects of band offset determined by band bending at the interface of the CSFC layer/passivation layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field effect passivation. Furthermore, it increased the selectivity of contact. In the experimental cell, nc-SiOx:H was used as the CSFC layer, where efficiency of the SHJ solar cell was 22.77%. Our investigation shows that if a SiOx layer passivation layer is used, the device can achieve efficiency up to 25.26%. This improvement in the cell is mainly due to the enhancement in open circuit voltage (Voc) because of lower interface defect density resulting from the SiOx passivation layer.
Highlights
Crystalline silicon (c-Si) solar cells dominate the global photovoltaic market, accounting for more than 90% of production [1,2]
The performance improvement of silicon heterojunction (SHJ) solar cells is dependent on reduction in the following: 1) carrier collection losses using thin wafer [4]; 2) surface recombination losses by surface passivation [5,6]; and 3) parasitic absorption loss of carrier selective front contact (CSFC) layers by controlling their thickness and using wide band-gap materials [7,8]
The results in the previous section suggest that a low density it (Dit) can enhance Voc and efficiency of the SHJ solar cell
Summary
Crystalline silicon (c-Si) solar cells dominate the global photovoltaic market, accounting for more than 90% of production [1,2]. An efficiency level of 26.7% for a silicon heterojunction (SHJ) cell was reported by Kaneka corporation using the integrated back contact technique [3]. The performance improvement of SHJ solar cells is dependent on reduction in the following: 1) carrier collection losses using thin wafer [4]; 2) surface recombination losses by surface passivation [5,6]; and 3) parasitic absorption loss of carrier selective front contact (CSFC) layers by controlling their thickness and using wide band-gap materials [7,8]. The a-Si:H doping concentration doping-induced defects increase, whichAdditionally, limits the efficiency of materials reduce transmittance owing to the reduce inherent low band-gap. The is simulation siliconfor oxide functionalized asunder passivation and CSFC layers for the RE-SHJ discussed isunder performed to identify essential factors enhancing theisefficiency of the device.
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