There are several important reliability issues that have hindered the commercialization of ferroelectric random access memory (FRAM). SrBi 2 Ta 2 O 9 (SBT) thin films have attracted much attention due to their fatigue-free properties for the FRAM applications. Recently, in elucidating the origin of the fatigue-free properties, we found that Ladoping in Bi 4 Ti 3 O 12 films can increase the chemical stability of the oxygen ions, resulting in fatigue-free characteristics. In addition to the excellent characteristics, the (Bi,La) 4 Ti 3 O 12 (BLT) films were found to have good properties for FRAM applications, including a low processing temperature and a large remnant polarization value. More recently, we also found that the BLT films have good retention properties and high resistance against hydrogen damages below 350°C. These properties suggest that the BLT films should be a new candidate material for FRAM.