Abstract
Fatigue-free bismuth-layered SrBi2Ta2O9 (SBT) films were deposited on Pt/Ti/SiO2/Si substrates by r.f. magnetron sputtering at room temperature. The variation of structure and electrical properties were studied as a function of annealing temperatures from 750–850 °C. The films annealed at 800 °C had a composition ratio of Sr:Br:Ta = 0.7:2.0:2.0. X-ray photoelectron spectroscopy signals of bismuth show an oxygen-deficient state within the SBT films. The films annealed at 800 °C have a thickness of 200 nm and a relatively dense microstructure. The remanent polarization (2P r), and the coercive field (2E c), obtained for the SIBT films, were 9.1 μC cm−2 and 85 kV cm−1 at an applied voltage of 3 V, respectively. The films showed fatigue-free characteristics up to 1010 cycles under 5 V bipolar square pulses. The leakage current density was about 7 × 10−7 A cm−2 at 150 kV cm−1. The SBT films prepared by r.f. magnetron sputtering were attractive for application to non-volatile memories.
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