Abstract
SrBi2Ta2O9(SBT) films were prepared on Pt/Ti/SiO2/Si substrates by conventional r.f. magnetron sputtering. The ferroelectric and dielectric properties of bismuth layer structured ferroelectrics are studied for the purpose of examining the effects of oxygen flow rate during annealing. Oxygen flow rate influenced the shape of hysteresis loop, polarization value and current voltage characteristics. The remanent polarization (2Pr) and the coercive field (2Ec) obtained from a 240 nm thick SBT films annealed at 760Torr were 4.4uC/cm2 and 72kV/cm at an applied voltage of 5 V, respectively. The films annealed at oxygen flowing condition showed leakage current density of ∼10−7 A/cm2 at 150kV/cm. The films showed fatigue-free characteristics independent of annealing condition up to 1011 cycles under 5 V bipolar square pulse.
Published Version
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