The paper presents the results of experiments aimed at ascertaining the possibility of controlling the “photomemory” in the Ge-GeO2 system by the technique of doping the oxide layer with metal ions. It is shown that under certain conditions doping of such a system with Na, K, Cs, Cr, and Ti ions results in the formation of deep electron traps which are recharged under illumination. A study was made of how heating in a vacuum and in oxygen as well as adsorption of water and ammonia affect the optical charging and the density of fast surface states for doped specimens.