Abstract
If Ge samples are X-irradiated between liquid nitrogen temperature and room temperature the charge distribution on the surface of the samples is changed. The X-ray response is due to a combination of the different charge carrier excitations between the bulk and the surface oxide. After X-irradiation is stopped the equilibrium within the surface is restored by a partial relaxation of the radiation- induced charge changes. The relaxation process consists of a fast decay and a slower decay. The fast component is governed by the relaxation times of the intrinsic photoconductivity and of the fast surface states. The slow relaxation process is related to two sets of slow surface states which may be charged or discharged by quantum mechanical tunnelling and by the excitation of carriers over the oxide potential barrier.
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