Abstract
The progress in solid state technology is largely determined by our ability to control and modify certain materials parameters in a well defined manner. Semiconductors are a typical example, where minute traces of impurities in the order of parts per million and less will influence the electrical properties markedly.The concept of introducing such dopants into semiconductors by means of high energetic particles was discussed many years ago. In 1954, Shockley1 submitted a patent describing the ’’Forming of Semiconductor Devices by Ionic Bombardment.’’ As the semiconductor technology matured, developing shallower and shallower device structures, the control aspect became vitally important. And it is precisely in the field of control that ion implantation offers major advantages over standard diffusion technologies, e.g.,(a) Accurate control of the total amount of impurity transferred to the wafer by measurement of the accumulated charge during implantations.(b) A high degree of areal uniformity across the w...
Published Version
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