The fabrication and characterization of the novel thermal sensitive probes presented here are established on a well-known physical effect of the electrical resistivity changes of a nanometric metal (Au or Pt) filament. The filament is fabricated from the high aspect ratio (1:4) silicon AFM cantilever tip (approximately 3–5μm high) covered by a metal layer (approximately 50nm thick), but keeping its tip diameter of about 20nm. Therefore, a focused ion beam (FIB) milling process is used to remove the silicon underneath the metal coating of the tip in order to increase the thermal and electrical resistance. Silicon is milled away very precisely with ion beam settings of only 69pA beam current and 30kV acceleration voltage. As a result, the electrical resistance of the metal filament increases in the order of 5–6 times in comparison to its original value (≈25Ω). The new probe tip is undergoing a vast resistance change with the slightest temperature fluctuations measured at the tip apex. Typical characteristic thermal sensitivity (SA) value of the sensor is measured to be SA=40±4nm/mW. In addition, AFM thermal probe has a full Wheatstone bridge integrated, which is used for an ultra-sensitive and non-optical deflection read out. Deflection sensitivity (SV) of the thermal probes is measured to be SV=9±0.5μV/nm. This self-sensing method allows recording simultaneously data about the topography, as well as the thermal properties of the sample’s surface. Therefore the probe is operating in a contact mode. Thermally-calibrated sensors are implemented in a measurement setup, which includes self-developed electronics connected to a lock-in amplifier for a fast data acquisition. The novel approach is the combination of CMOS technology, bulk and surface micromachining with advanced FIB milling processes to fabricate unique nanoprobes with a thermal resolution of 10−3K.
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