We present a Ga adsorption study of both polar GaN (0001) and $(0001\ifmmode\bar\else\textasciimacron\fi{})$ surfaces using line-of-sight quadrupole mass spectrometry as a quantitative in situ method. Monitoring the desorbing Ga atoms, two characteristic desorption regimes (exponential and steady-state regimes) were found that are assigned to the formation of a thin equilibrium Ga adlayer and Ga droplets on top of it. The Ga adlayer coverage differs substantially between the two surface polarities, being 1.1 monolayers on $(0001\ifmmode\bar\else\textasciimacron\fi{})$ GaN and 2.4 monolayers on (0001) GaN. Additional temperature-dependent measurements of the surface lifetime of Ga adatoms unveil fundamental differences in the adsorbate-substrate binding energetics both for the Ga adlayers on the two surface polarities and for the Ga droplets.
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